NSVF6003SB6T1G [ONSEMI]

RF Transistor;


型号：	NSVF6003SB6T1G
厂家：	ONSEMI
描述：	RF Transistor
文件：	总6页 (文件大小：690K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NSVF6003SB6

Advance Information

RF Transistor

12 V, 150 mA, f = 7 GHz, NPN Single

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This RF transistor is designed for low noise amplifier applications. CPH

package is suitable for use under high temperature environment because it

has superior heat radiation characteristics. This RF transistor is AEC-Q101

qualified and PPAP capable for automotive applications.

12 V, 150 mA

= 7 GHz typ.

Features

 High Gain (f_T= 7 GHz typ)

RF Transistor

 High Current (I_C= 150 mA)

 Miniature and Thin 6 pin Package

 Large Collector Dissipation (800 mW)

 AEC-Q101 qualified and PPAP capable

 Pb-Free, Halogen Free and RoHS compliance

ELECTRICAL CONNECTION

NPN

1, 2, 5, 6

Typical Applications

 Low Noise Amplifier for FM Radio

 Low Noise Amplifier for TV



1 : Collector

2 : Collector

3 : Base

4 : Emitter

5 : Collector

6 : Collector

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)

MARKING

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Value

Unit

CBO

CEO

EBO

150

800

CPH6

Collector Dissipation (Note 2)

Operating Junction and

Storage Temperature

Tj, Tstg

55 to +150

C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

Note 2 : Surface mounted on ceramic substrate (250 mm² 0.8 mm).

ORDERING INFORMATION

See detailed ordering and shipping

information on page 6 of this data sheet.

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

August 2016 - Rev. P1

Publication Order Number :

NSVF6003SB6/D

NSVF6003SB6

ELECTRICAL CHARACTERISTICS at Ta  25C (Note 3)

Value

typ

Parameter

Symbol

Conditions

= 10 V, I = 0 A

Unit

min

max

1.0

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

A

CBO

EBO

= 1 V, I = 0 A

100

180

= 5 V, I = 50 mA

Gain-Bandwidth Product

Output Capacitance

Reverse Transfer Capacitance

Forward Transfer Gain

Noise Figure

GHz

Cob

1.3

0.9

9.0

1.8

2.0

3.0

= 10 V, f = 1 MHz

Cre

| S21e |²

= 5 V, I = 50 mA, f = 1 GHz

= 5 V, I = 5 0mA, f = 1 GHz

Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Note 4 : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.

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NSVF6003SB6

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NSVF6003SB6

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NSVF6003SB6

PACKAGE DIMENSIONS

unit : mm

CPH6

CASE 318BD

ISSUE O

RECOMMENDED

SOLDERING FOOTPRINT

0.6

0.95

1 : Collector

2 : Collector

3 : Base

4 : Emitter

5 : Collector

6 : Collector

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NSVF6003SB6

ORDERING INFORMATION

Device

Marking

Package

CPH6

(Pb-Free / Halogen Free)

Shipping (Qty / Packing)

3,000 / Tape & Reel

NSVF6003SB6T1G

† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF

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