NSVG3109SG6T1G [ONSEMI]

MMIC, RF Amplifier, 3 V, 16 mA, 0.1 to 3.6 GHz;
NSVG3109SG6T1G
型号: NSVG3109SG6T1G
厂家: ONSEMI    ONSEMI
描述:

MMIC, RF Amplifier, 3 V, 16 mA, 0.1 to 3.6 GHz

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中文:  中文翻译
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DATA SHEET  
www.onsemi.com  
MMIC Amplifier, 3 V, 16ꢀmA,  
0.1 to 3.6 GHz, MCPH6  
SC88FL / MCPH6  
CASE 419AS  
NSVG3109SG6  
Features  
High Gain: Gp = 23 dB typ. @ 1 GHz  
Wideband response: fu = 3.6 GHz  
MARKING DIAGRAM  
Low current: I = 16 mA typ.  
CC  
HLFM  
G
High output power: Po (1dB) = 4 dBm  
Port impedance: input/output: 50 W  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ100  
Qualified and PPAP Capable  
This is a PbFree Device  
HLF = Specific Device Code  
M
= Date Code  
G
= PbFree Package  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
Symbol  
Parameter  
Supply Voltage  
Ratings  
Unit  
V
V
CC  
5
I
Circuit Current  
25  
mA  
mW  
°C  
CC  
P
Allowable Power Dissipation  
Operating Temperature  
Storage Temperature  
280  
D
Topr  
Tstg  
40 to +125  
55 to +150  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
RECOMMENDED OPERATING CONDITIONS (Ta = 25°C)  
Ratings  
Symbol  
Parameter  
Supply Voltage  
Min  
Typ  
3
Max  
3.3  
Unit  
V
V
CC  
2.7  
°C  
Topr  
Operating Ambient Temperature 40  
+25  
+125  
Functional operation above the stresses listed in the Recommended Operating  
Ranges is not implied. Extended exposure to stresses beyond the  
Recommended Operating Ranges limits may affect device reliability.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
March, 2022 Rev. 1  
NSVG3109SG6/D  
NSVG3109SG6  
ELECTRICAL CHARACTERISTICS (Ta = 25°C, V = 3 V, Zs = Z = 50 W)  
CC  
L
Ratings  
Typ  
16.0  
23.0  
24.0  
31.5  
31.5  
20.5  
15.0  
20.0  
14.0  
4.3  
Symbol  
Parameter  
Conditions  
Min  
11.5  
21.0  
22.0  
27.0  
27.0  
16.0  
10.0  
15.0  
10.0  
Max  
20.5  
26.0  
27.0  
Unit  
mA  
dB  
I
Circuit Current  
Power Gain  
CC  
Gp  
ISL  
f = 1 GHz  
f = 2.2 GHz  
f = 1 GHz  
f = 2.2 GHz  
f = 1 GHz  
f = 2.2 GHz  
f = 1 GHz  
f = 2.2 GHz  
f = 1 GHz  
f = 2.2 GHz  
f = 1 GHz  
f = 2.2 GHz  
Isolation  
dB  
dB  
RLin  
RLout  
NF  
Input Return Loss  
Output Return Loss  
Noise Figure  
dB  
5.0  
5.0  
dB  
4.3  
Po (1dB) Gain 1dB Compression Output Power  
4.0  
6.4  
dBm  
2.0  
4.2  
fu  
Upper Limit Operating Frequency  
3 dB down below flat gain at f = 1GHz  
3.6  
GHz  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Pay attention to handling since it is liable to be affected by static electricity due to the high frequency process adopted.  
Test Circuit  
100 pF  
IN  
6
1
5
2
4
3
100 pF  
100 nH  
OUT  
1000 pF  
V
CC  
Connect 2, 4 and 5 with GND.  
Figure 1. Test Circuit  
www.onsemi.com  
2
NSVG3109SG6  
Evaluation Board  
OUT  
IN  
C1  
C2  
L1  
C3  
Symbol  
C1, C2  
C3  
Value  
100 pF  
1000 pF  
100 nH  
V
CC  
L1  
Figure 2. Evaluation Board  
Characteristics  
30  
25  
20  
15  
10  
5
0
0
1
2
3
4
Circuit Voltage, V V  
CC  
Figure 3. ICC VCC  
www.onsemi.com  
3
NSVG3109SG6  
35  
30  
25  
20  
15  
0
5  
3.0 V  
3.0 V  
3.3 V  
2.7 V  
10  
15  
20  
3.3 V  
2.7 V  
3000  
10  
5
25  
30  
0
1000  
2000  
3000  
4000  
0
1000  
2000  
4000  
Frequency, f MHz  
Frequency, f MHz  
Figure 4. Gp f  
Figure 5. RLin f  
10  
20  
30  
0
5  
10  
15  
20  
3.0 V  
3.3 V  
2.7 V  
3.0 V  
2.7 V  
3.3 V  
40  
50  
25  
30  
0
1000  
2000  
3000  
4000  
0
1000  
2000  
3000  
4000  
Frequency, f MHz  
Frequency, f MHz  
Figure 6. ISL f  
Figure 7. RLout f  
15  
10  
5
15  
10  
5
V
= 3.0 V  
V
= 3.0 V  
CC  
CC  
f = 1.0 GHz  
f = 2.2 GHz  
0
0
5  
5  
10  
15  
10  
15  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
Input Level, Pin dBm  
Input Level, Pin dBm  
Figure 8. Pout Pin  
Figure 9. Pout Pin  
www.onsemi.com  
4
NSVG3109SG6  
S Parameter  
S11  
50  
50  
S22  
100  
100  
25  
25  
250  
250  
10  
10  
3 GHz  
50  
2GHz  
25  
250  
250  
100  
1GHz  
100  
10  
10  
25  
50  
3 GHz  
0
0
1GHz  
2GHz  
10  
10  
250  
250  
25  
25  
100  
100  
50  
50  
Figure 10. S Parameter  
ORDERING INFORMATION  
Specific Device  
Marking  
Package Type  
(JEITA, JEDEC)  
Device Order Number  
Package Type  
Shipping  
NSVG3109SG6T1G  
HLF  
SC82, SC82A, SC88  
MCPH6  
(PbFree)  
3000 / Tape & Reel  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
5
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SC88FL / MCPH6  
CASE 419AS  
ISSUE A  
DATE 28 SEP 2022  
0.1  
A
0.05 S  
GENERIC  
MARKING DIAGRAM*  
XXX MG  
G
XXX = Specific Device Code  
M
= Date Code  
G
= PbFree Package  
(Note: Microdot may be in either location)  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON65646E  
SC88FL / MCPH6  
PAGE 1 OF 1  
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© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
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