MMBT2222ALT1G [ONSEMI]
General Purpose Transistors; 通用晶体管
| 型号： | MMBT2222ALT1G |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors |
| 文件： | 总8页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
COLLECTOR
3
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1
MAXIMUM RATINGS
BASE
Rating
Symbol
Value
Unit
2
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
EMITTER
30
40
MMBT2222LT1
MMBT2222ALT1
MARKING
DIAGRAM
Collector−Base Voltage
Vdc
Vdc
60
75
3
MMBT2222LT1
MMBT2222ALT1
1
Emitter−Base Voltage
2
5.0
6.0
MMBT2222LT1
MMBT2222ALT1
xxx
M
SOT−23
CASE 318
Style 6
Collector Current − Continuous
I
C
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
xxx = Specific Device Code
Symbol
Max
Unit
= (M1B = MMBT2222LT1,
= 1P = MMBT2222ALT1)
= Date Code
Total Device Dissipation
FR−5 Board (Note 1)
P
D
225
mW
M
T = 25°C
Derate above 25°C
A
1.8
mW/°C
°C/W
ORDERING INFORMATION
Thermal Resistance
Junction−to−Ambient
R
556
q
JA
†
Device
Package
Shipping
Total Device Dissipation
P
D
300
mW
MMBT2222LT1
SOT−23 3000/Tape & Reel
Alumina Substrate (Note 2)
MMBT2222LT1G
SOT−23 3000/Tape & Reel
(Pb−Free)
T = 25°C
A
2.4
mW/°C
°C/W
Derate above 25°C
Thermal Resistance
Junction−to−Ambient
R
417
MMBT2222ALT1
SOT−23 3000/Tape & Reel
q
JA
MMBT2222ALT1G SOT−23 3000/Tape & Reel
(Pb−Free)
Junction and Storage
Temperature Range
T , T
J
−55 to
+150
°C
stg
MMBT2222LT3
MMBT2222ALT3
SOT−23 10,000/Tape & Reel
SOT−23 10,000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MMBT2222ALT3G SOT−23 10,000/Tape & Reel
(Pb−Free)
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
September, 2004 − Rev. 5
MMBT2222LT1/D
MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = 10 mAdc, I = 0)
MMBT2222
MMBT2222A
V
30
40
−
−
Vdc
Vdc
Vdc
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = 10 mAdc, I = 0)
MMBT2222
MMBT2222A
V
V
60
75
−
−
C
E
Emitter−Base Breakdown Voltage (I = 10 mAdc, I = 0)
MMBT2222
MMBT2222A
5.0
6.0
−
−
E
C
Collector Cutoff Current (V = 60 Vdc, V
= 3.0 Vdc)
MMBT2222A
I
−
10
nAdc
CE
EB(off)
CEX
Collector Cutoff Current (V = 50 Vdc, I = 0)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
I
−
−
−
−
0.01
0.01
10
mAdc
CB
E
CBO
(V = 60 Vdc, I = 0)
CB
E
(V = 50 Vdc, I = 0, T = 125°C)
CB
E
A
10
(V = 60 Vdc, I = 0, T = 125°C)
CB
E
A
Emitter Cutoff Current (V = 3.0 Vdc, I = 0)
MMBT2222A
MMBT2222A
I
EBO
−
−
100
20
nAdc
nAdc
EB
C
Base Cutoff Current (V = 60 Vdc, V
= 3.0 Vdc)
I
BL
CE
EB(off)
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 0.1 mAdc, V = 10 Vdc)
35
50
75
35
100
50
30
40
−
−
−
−
300
−
C
CE
(I = 1.0 mAdc, V = 10 Vdc)
C
CE
(I = 10 mAdc, V = 10 Vdc)
C
CE
(I = 10 mAdc, V = 10 Vdc, T = −55°C)
MMBT2222A only
C
CE
CE
A
(I = 150 mAdc, V = 10 Vdc) (Note 3)
C
(I = 150 mAdc, V = 1.0 Vdc) (Note 3)
C
CE
(I = 500 mAdc, V = 10 Vdc) (Note 3)
C
MMBT2222
MMBT2222A
−
−
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 150 mAdc, I = 15 mAdc)
V
Vdc
Vdc
CE(sat)
MMBT2222
MMBT2222A
−
−
0.4
0.3
C
B
(I = 500 mAdc, I = 50 mAdc)
MMBT2222
MMBT2222A
−
−
1.6
1.0
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = 150 mAdc, I = 15 mAdc)
V
BE(sat)
MMBT2222
MMBT2222A
−
0.6
1.3
1.2
C
B
(I = 500 mAdc, I = 50 mAdc)
MMBT2222
MMBT2222A
−
−
2.6
2.0
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
f
T
MHz
(I = 20 mAdc, V = 20 Vdc, f = 100 MHz)
MMBT2222
MMBT2222A
250
300
−
−
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
pF
pF
obo
−
8.0
CB
E
Input Capacitance
C
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
MMBT2222
MMBT2222A
−
−
30
25
EB
C
Input Impedance
h
kW
ie
re
fe
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
2.0
0.25
8.0
1.25
C
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
−4
Voltage Feedback Ratio
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
h
X 10
MMBT2222A
MMBT2222A
−
−
8.0
4.0
C
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
Small−Signal Current Gain
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
−
MMBT2222A
MMBT2222A
50
75
300
375
C
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
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2
C * < 10 pF
S
−2 V
MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
SMALL−SIGNAL CHARACTERISTICS
Output Admittance
h
oe
mmhos
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
5.0
25
35
200
C
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
Collector Base Time Constant
rb, C
NF
ps
c
(I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz)
MMBT2222A
−
−
150
4.0
E
CB
Noise Figure
dB
(I = 100 mAdc, V = 10 Vdc, R = 1.0 kW, f = 1.0 kHz) MMBT2222A
C
CE
S
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
t
t
−
−
−
−
10
25
d
(V = 30 Vdc, V
= −0.5 Vdc,
BE(off)
B1
CC
ns
ns
I
C
= 150 mAdc, I = 15 mAdc)
Rise Time
Storage Time
Fall Time
t
r
225
60
s
(V = 30 Vdc, I = 150 mAdc,
CC
C
I
B1
= I = 15 mAdc)
B2
t
f
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ꢀ30 V
200
+ꢀ30 V
1.0 to 100 ms,
1.0 to 100 ms,
200
+16 V
0
DUTY CYCLE ≈ 2.0%
+16 V
0
DUTY CYCLE ≈ 2.0%
1 k
< 20 ns
1N914
−14 V
1 kW
C * < 10 pF
S
< 2 ns
−ꢀ4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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3
MMBT2222LT1, MMBT2222ALT1
1000
700
500
T = 125°C
J
300
200
25°C
100
70
−55°C
50
30
20
V
V
= 1.0 V
= 10 V
CE
CE
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200 300
500 700 1.0 k
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
1.0
0.8
T = 25°C
J
0.6
0.4
0.2
0
I
C
= 1.0 mA
10 mA
150 mA
500 mA
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
I , BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
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4
MMBT2222LT1, MMBT2222ALT1
200
100
500
V
= 30 V
I /I = 10
C B
CC
I /I = 10
300
T = 25°C
J
C B
t′ = t − 1/8 t
f
s
s
I = I
B1 B2
200
70
50
t @ V = 30 V
CC
r
t @ V
T = 25°C
J
= 2.0 V
= 0
d
t @ V
EB(off)
EB(off)
100
70
d
30
20
t
f
50
30
20
10
7.0
5.0
10
3.0
2.0
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200 300 500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Turn−Off Time
10
10
R = OPTIMUM
S
R = SOURCE
f = 1.0 kHz
= 50 mA
S
R = RESISTANCE
I
= 1.0 mA, R = 150 W
S
500 mA, R = 200 W
C
8.0
8.0
S
I
C
S
100 mA, R = 2.0 kW
S
50 mA, R = 4.0 kW
100 mA
500 mA
1.0 mA
S
6.0
4.0
2.0
0
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R , SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
S
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
500
V
= 20 V
CE
T = 25°C
20
J
300
200
C
eb
10
7.0
5.0
100
C
cb
3.0
2.0
70
50
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
2.0 3.0
5.0 7.0 10
20
30
I , COLLECTOR CURRENT (mA)
50 70 100
REVERSE VOLTAGE (VOLTS)
C
Figure 9. Capacitances
Figure 10. Current−Gain Bandwidth Product
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5
MMBT2222LT1, MMBT2222ALT1
1.0
0.8
+0.5
0
T = 25°C
J
R
q
for V
CE(sat)
VC
V
@ I /I = 10
C B
BE(sat)
−ꢀ0.5
1.0 V
0.6
0.4
0.2
0
−ꢀ1.0
−ꢀ1.5
V
@ V = 10 V
CE
BE(on)
R
for V
BE
−ꢀ2.0
−ꢀ2.5
q
VB
V
@ I /I = 10
C B
CE(sat)
0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100 200 500 1.0 k
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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6
MMBT2222LT1, MMBT2222ALT1
PACKAGE DIMENSIONS
SOT−23 (TO−236AB)
CASE 318−08
ISSUE AH
NOTES:
ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ꢁꢂ2. CONTROLLING DIMENSION: INCH.
ꢁꢂ3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
ꢁꢂ4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
3
INCHES
DIM MIN MAX
MILLIMETERS
S
C
B
MIN
2.80
1.20
0.89
0.37
1.78
MAX
3.04
1.40
1.11
1
2
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
V
G
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.0005 0.0040 0.013
0.0034 0.0070 0.085
K
L
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
0.35
0.89
2.10
0.45
S
V
H
J
D
K
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MMBT2222LT1, MMBT2222ALT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MMBT2222LT1/D
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