MCH6601-TL-E [ONSEMI]
P 沟道，功率 MOSFET，-30V，-0.2A，10.4Ω，双 MCPH6;
| 型号： | MCH6601-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-30V，-0.2A，10.4Ω，双 MCPH6 |
| 文件： | 总6页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN6458D
MCH6601
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
30V, 0.2A, 10.4 , Dual MCPH6
Features
•
Low ON-resistance
•
•
•
Ultrahigh-speed switching
1.5V drive
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--30
±10
--0.2
--0.8
0.8
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
P
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: MCPH6
7022A-006
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
2.0
0.15
MCH6601-TL-E
Packing Type : TL
Marking
FA
6
5
4
3
0 to 0.02
TL
1
2
0.65
0.3
Electrical Connection
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
1
2
3
4
6 : Drain1
1
2
3
MCPH6
6
5
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM TC-00002985/70412 TKIM/42806 MSIM TB-00002289/ No.6458-1/6
O3105PE MSIM TB-00001865/N2499 TSIM TA-2457
MCH6601
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--30
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I =--1mA, V =0V
D GS
(BR)DSS
I
V
=--30V, V =0V
--1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
μ
GSS
GS DS
V
(off)
|
V
DS
=--10V, I =--100
A
μ
--0.4
80
--1.4
V
GS
yfs
D
Forward Transfer Admittance
V
DS
=--10V, I =--50mA
D
110
8
mS
Ω
|
R
R
R
(on)1
(on)2
(on)3
I
=--50mA, V =--4V
10.4
15.4
54
DS
DS
DS
D GS
Static Drain to Source On-State Resistance
I
D
=--30mA, V =--2.5V
GS
11
Ω
I
D
=--1mA, V =--1.5V
GS
27
Ω
Input Capacitance
Ciss
7.5
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
5.7
DS
1.8
t
t
t
t
(on)
24
d
r
55
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
120
130
1.43
0.18
0.25
--0.83
d
f
Total Gate Charge
Qg
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=--10V, V =--10V, I =--100mA
GS
D
V
SD
I =--100mA, V =0V
S GS
--1.2
Switching Time Test Circuit
V
= --15V
DD
V
I
= --50mA
L
IN
D
0V
--4V
R =300Ω
V
D
OUT
V
IN
PW=10μs
D.C.≤1%
G
P.G
50Ω
S
MCH6601
Ordering Information
Device
Package
MCPH6
Shipping
3,000pcs./reel
memo
MCH6601-TL-E
Pb-Free
No.6458-2/6
MCH6601
I
D
-- V
DS
I
D
-- V
GS
--0.20
--0.18
--0.16
--0.14
--0.10
V
= --10V
--3.5V
DS
--0.09
--0.08
--0.07
--0.06
--0.05
--0.04
--0.03
--0.02
25°C
--2.0V
--0.12
--0.10
--0.08
--0.06
--0.04
V
= --1.5V
GS
--0.01
0
--0.02
0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
IT00077
Gate to Source Voltage, V -- V
GS
IT00078
Drain to Source Voltage, V
-- V
DS
R
(on) -- I
R
(on) -- V
GS
DS
D
DS
100
30
25
20
15
10
V
= --4V
Ta=25°C
GS
7
5
3
2
Ta=75°C
--25°C
10
--50mA
7
5
I = --30mA
D
25°C
3
2
5
0
1.0
2
2
2
3
5
7
2
3
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--0.01
--0.1
IT00079
IT00080
Gate to Source Voltage, V
-- V
Drain Current, I -- A
D
R
GS
R
(on) -- I
(on) -- I
DS D
DS
D
1000
100
V
= --1.5V
V
= --2.5V
GS
GS
7
5
7
5
3
2
3
2
Ta=75°C
25°C
100
10
7
5
7
5
--25°C
Ta=75°C
--25°C
3
2
3
2
25°C
1.0
10
--0.0001
2
3
5
7
2
3
3
5
7
2
3
--0.01
--0.1
--0.001
IT00081
IT00082
Drain Current, I -- A
Drain Current, I -- A
D
D
R
(on) -- Ta
| yfs | -- I
DS
D
1.0
18
16
V
= --10V
DS
7
5
14
12
3
2
25°C
0.1
10
8
7
5
6
3
2
4
2
0.01
--0.01
3
5
7
2
3
--60 --40 --20
0
20
40
60
80 100 120 140 160
--0.1
IT00083
IT00084
Ambient Temperature, Ta -- °C
Drain Current, I -- A
D
No.6458-3/6
MCH6601
SW Time -- I
I
S
-- V
D
SD
5
1000
V
=0V
V
V
= --15V
GS
DD
= --4V
7
GS
3
2
5
3
2
t
f
--0.1
100
7
5
7
5
t
r
3
2
3
2
t (on)
d
--0.01
--0.5
10
--0.01
2
3
5
7
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
IT00085
--0.1
IT00086
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
Ciss, Coss, Crss -- V
DS
V
-- Qg
GS
--10
100
f=1MHz
V
= --10V
DS
I = --100mA
7
5
--9
--8
--7
--6
--5
--4
--3
--2
D
3
2
10
Ciss
7
5
3
2
Crss
--1
0
1.0
0
--5
--10
--15
--20
--25
--30
IT00087
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Total Gate Charge, Qg -- nC
IT00088
Drain to Source Voltage, V
-- V
DS
A S O
P
-- Ta
D
--1.0
1.0
0.8
0.6
7
I
= --0.8A(PW≤10μs)
DP
5
3
2
I = --0.2A
D
--0.1
7
5
0.4
Operation in this
area is limited by R (on).
DS
3
2
0.2
0
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
--0.01
--1.0
2
3
5
7
2
3
5
0
20
40
60
80
100
120
140
160
--10
Drain to Source Voltage, V
DS
-- V
Ambient Temperature, Ta -- °C
IT01733
IT01734
No.6458-4/6
MCH6601
Outline Drawing
Land Pattern Example
MCH6601-TL-E
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.4
0.65 0.65
No.6458-5/6
MCH6601
Note on usage : Since the MCH6601 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6458-6/6
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