MCH6602_07 [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用
| 型号： | MCH6602_07 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | General-Purpose Switching Device Applications |
| 文件： | 总5页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN6445B
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
MCH6602
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 1.5V drive.
• Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
30
±10
0.35
1.4
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
A
DP
P
0.8
W
°C
°C
D
Tch
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=30V, V =0V
GS
1
±10
1.3
DSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
GSS
V
(off)
GS
=10V, I =100µA
0.4
D
Forward Transfer Admittance
yfs
=10V, I =80mA
0.15
0.22
2.9
3.7
6.4
7.0
5.9
2.3
S
D
R
(on)1
(on)2
(on)3
I
D
I
D
I
D
=80mA, V =4V
GS
3.7
5.2
Ω
DS
DS
DS
Static Drain-to-Source On-State Resistance
R
R
=40mA, V =2.5V
GS
Ω
=10mA, V =1.5V
GS
12.8
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FB
Ciss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
pF
pF
pF
DS
DS
DS
Coss
Crss
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12407 TI IM TC-00000415 / 70306 / 42806PE MS IM TB-00002288 / 30300 TS (KOTO) TA-2509 No.6445-1/5
MCH6602
Continued from preceding page.
Ratings
typ
Parameter
Symbol
t (on)
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
19
ns
ns
ns
ns
nC
nC
nC
V
d
t
r
65
155
Turn-OFF Delay Time
Fall Time
t (off)
d
t
120
f
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
Qgs
Qgd
V
V
V
=10V, V =10V, I =150mA
GS
1.58
0.26
0.31
0.87
DS
DS
DS
D
=10V, V =10V, I =150mA
GS
D
=10V, V =10V, I =150mA
GS
D
V
SD
I =150mA, V =0V
GS
1.2
S
Package Dimensions
unit : mm
Electrical Connection
7022A-006
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
2.0
0.15
6
5
4
3
0 to 0.02
1
2
Top view
1
2
3
0.65
0.3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1
2
3
4
6
5
SANYO : MCPH6
Switching Time Test Circuit
V
=15V
DD
V
IN
4V
0V
I
=80mA
L
D
R =187.5Ω
D
V
OUT
V
IN
PW=10µs
D.C.≤1%
G
P.G
MCH6602
50Ω
S
No.6445-2/5
MCH6602
I
-- V
I
-- V
GS
D
DS
D
0.30
0.25
0.20
0.15
0.10
0.16
V =10V
DS
0.14
0.12
0.10
0.08
3.5V
4.0V
V =1.5V
GS
0.06
0.04
0.05
0
0.02
0
0
0.1
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT00030
IT00029
Gate-to-Source Voltage, V
GS
-- V
Drain-to-Source Voltage, V
-- V
DS
R
(on) -- I
R
(on) -- V
GS
DS
D
DS
10
7
10
9
Ta=25°C
V
=4V
GS
8
7
5
Ta=75°C
25°C
6
80mA
5
4
3
2
3
2
I =40mA
D
--25°C
1
0
1.0
0.01
2
2
2
3
3
3
5
7
2
3
5
0
1
2
3
4
5
6
7
8
9
10
0.1
IT00031
Gate-to-Source Voltage, V
GS
-- V
Drain Current, I -- A
IT00032
D
R
(on) -- I
R
(on) -- I
DS
D
DS
D
10
100
V
=2.5V
V
=1.5V
GS
GS
7
5
7
5
3
2
Ta=75°C
25°C
--25°C
10
Ta=75°C
--25°C
3
2
7
5
3
2
25°C
1.0
1.0
0.001
2
3
5
7
2
3
5
5
7
2
3
5
0.01
0.1
0.01
IT00033
IT00034
Drain Current, I -- A
Drain Current, I -- A
D
D
R
(on) -- Ta
yfs -- I
DS
D
1.0
7
6
V
=10V
DS
7
5
25°C
3
2
5
4
3
2
0.1
7
5
3
2
1
0
0.01
0.01
--60 --40 --20
0
20
40
60
80 100 120 140 160
5
7
2
3
5
0.1
Drain Current, I -- A
Ambient Temperature, Ta -- °C
IT00035
IT00036
D
No.6445-3/5
MCH6602
I
-- V
SW Time -- I
S
SD
D
1.0
1000
V
V
=15V
=4V
GS
V
=0V
DD
GS
7
7
5
5
3
2
3
2
t
f
100
0.1
7
5
7
5
t
r
3
2
3
2
t (on)
d
0.01
0.5
10
0.01
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
2
3
5
7
2
0.1
Diode Forward Voltage, V
Ciss, Coss, Crss -- V
-- V
IT00038
Drain Current, I -- A
SD
D
V
-- Qg
GS
DS
10
100
f=1MHz
V
=10V
=150mA
DS
7
9
8
7
I
D
5
3
2
6
5
4
3
2
1
0
10
Ciss
7
5
Coss
3
2
Crss
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
IT00039
IT00040
DS
A S O
P
-- Ta
D
1.0
0.8
0.6
0.4
3
2
I
=1.4A
PW≤10µs
DP
1.0
7
5
I =0.35A
D
3
2
Operation in
this area is
limited by R (on).
0.1
7
5
DS
0.2
0
3
2
Ta=25
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
°C
0.01
2
3
5
7
2
3
5
0
20
40
60
80
100
120
140
160
1.0
10
Drain-to-Source Voltage, V
DS
-- V
IT01117
Ambient Temperature, Ta -- °C
IT01118
No.6445-4/5
MCH6602
Note on usage : Since the MCH6602 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.
PS No.6445-5/5
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