MCH6603-TL-H [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用
| 型号： | MCH6603-TL-H |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | General-Purpose Switching Device Applications |
| 文件： | 总7页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN6446C
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
MCH6603
Features
•
Low ON-resistance
•
Ultrahigh-speed switching
•
1.5V drive
•
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Halogen free conplaiance
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--50
±10
DSS
V
V
GSS
I
--0.14
--0.56
0.8
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
When mounted on ceramic substrate (900mm2 0.8mm)1unit
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: MCPH6
7022A-006
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
2.0
0.15
MCH6603-TL-H
Packing Type : TL
Marking
FC
6
5
4
3
0 to 0.02
TL
1
2
0.65
0.3
Electrical Connection
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1
2
3
4
1
2
3
SANYO : MCPH6
6
5
http://semicon.sanyo.com/en/network
71112 TKIM/51506PE MSIM TB-00002290/O3105PE MSIM TB-00001861/N1999 TSIM TA-2458
No.6446-1/7
MCH6603
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--50
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =--1mA, V =0V
D GS
(BR)DSS
I
V
=--50V, V =0V
--1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
μ
GSS
GS DS
V
(off)
|
V
DS
=--10V, I =--100 A
--0.4
70
--1.4
V
μ
GS
yfs
D
Forward Transfer Admittance
V
DS
=--10V, I =--40mA
110
18
mS
Ω
|
D
R
R
R
(on)1
(on)2
(on)3
I =--40mA, V =--4V
23
28
60
DS
DS
DS
D
GS
Static Drain-to-Source On-State Resistance
I =--20mA, V =--2.5V
20
Ω
D
GS
I =--5mA, V =--1.5V
30
Ω
D
GS
Input Capacitance
Ciss
7.4
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
4.2
DS
1.3
t (on)
d
20
t
35
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
160
150
1.40
0.16
0.23
--0.85
t
f
Total Gate Charge
Qg
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=--10V, V =--10V, I =--70mA
GS
D
V
SD
I =--70mA, V =0V
S GS
--1.2
Switching Time Test Circuit
V
= --25V
DD
V
I
= --40mA
L
IN
D
0V
--4V
R =625Ω
V
D
OUT
V
IN
PW=10μs
D.C.≤1%
G
P.G
50Ω
S
MCH6603
Ordering Information
Device
Package
MCPH6
Shipping
3,000pcs./reel
memo
MCH6603-TL-H
Pb Free and Halogen Free
No.6446-2/7
MCH6603
I
D
-- V
DS
I
D
-- V
GS
--0.14
--0.07
--0.06
--0.05
V
= --10V
DS
--0.12
--0.1
--0.04
--0.08
--0.06
--0.04
--0.03
--0.02
V
= --1.5V
GS
--0.01
0
--0.02
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Gate-to-Source Voltage, V
GS
-- V
IT00090
IT00091
Drain-to-Source Voltage, V
-- V
DS
R
(on) -- I
R
(on) -- V
GS
DS
D
DS
100
40
35
30
25
20
Ta=25°C
V
= --4V
GS
7
5
3
2
Ta=75°C
25°C
I = --20mA
--40mA
D
15
10
--25°C
10
--0.01
0
--1
--2
--3
--4
--5
--6
--7
--8
--9 --10
2
2
2
3
5
7
2
3
--0.1
Gate-to-Source Voltage, V
GS
-- V
IT00092
Drain Current, I -- A
D
IT00093
R
(on) -- I
R
(on) -- I
DS
D
DS
D
1000
100
V
= --2.5V
V
= --1.5V
GS
GS
7
5
7
5
3
2
Ta=75°C
25°C
100
7
3
2
--25°C
5
3
2
Ta=75°C
25°C
--25°C
10
--0.01
10
--0.001
2
3
5
7
2
3
3
5
7
2
3
--0.1
--0.01
IT00095
IT00094
Drain Current, I -- A
Drain Current, I -- A
D
D
R
(on) -- Ta
| yfs | -- I
DS
D
1.0
40
V
= --10V
DS
7
5
35
3
2
30
0.1
25
20
7
5
3
2
15
10
0.01
--0.01
3
5
7
2
3
--60 --40 --20
0
20
40
60
80 100 120 140 160
--0.1
IT00096
IT00097
Ambient Temperature, Ta -- °C
Drain Current, I -- A
D
No.6446-3/7
MCH6603
SW Time -- I
I
S
-- V
SD
D
1000
5
V
=0V
V
V
= --25V
= --4V
GS
DD
GS
7
3
2
5
t
3
2
f
--0.1
7
5
100
7
5
t
r
3
2
3
2
t (on)
d
--0.01
--0.5
10
--0.01
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
2
3
5
7
--0.1
IT00099
IT00098
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
Ciss, Coss, Crss -- V
DS
V
-- Qg
GS
100
7
5
--10
V
= --10V
f=1MHz
DS
--9
--8
--7
--6
--5
--4
--3
--2
I = --70mA
D
3
2
10
7
5
Ciss
Coss
Crss
3
2
1.0
7
5
3
2
--1
0
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
--5
--10 --15 --20 --25 --30 --35 --40 --45 --50
Drain-to-Source Voltage, V
-- V
IT00100
Total Gate Charge, Qg -- nC
IT00101
DS
A S O
P
-- Ta
D
--1.0
1.0
0.8
0.6
0.4
7
PW≤10μs
I
= --0.56A
DP
5
3
2
I = --0.14A
D
--0.1
7
5
Operation in this
area is limited by R (on).
DS
3
2
0.2
0
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--0.01
--1.0
0
20
40
60
80
100
120
140
160
2
3
5
7
2
3
5
7
--10
--100
IT01737
Drain-to-Source Voltage, V
DS
-- V
Ambient Temperature, Ta -- °C
IT01738
No.6446-4/7
MCH6603
Taping Specification
MCH6603-TL-H
No.6446-5/7
MCH6603
Outline Drawing
Land Pattern Example
MCH6603-TL-H
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.4
0.65 0.65
No.6446-6/7
MCH6603
Note on usage : Since the MCH6603 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of July, 2012. Specifications and information herein are subject
to change without notice.
PS No.6446-7/7
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