MCH6602-TL-E [ONSEMI]
N-Channel Power MOSFET, 30V, 0.35A, 3.7Ω, Dual MCPH6;
| 型号： | MCH6602-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET, 30V, 0.35A, 3.7Ω, Dual MCPH6 |
| 文件： | 总6页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN6445D
MCH6602
N-Channel Power MOSFET
http://onsemi.com
Ω
30V, 0.35A, 3.7 , Dual MCPH6
Features
•
Low ON-resistance
•
Ultrahigh-speed switching
•
1.5V drive
•
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
±10
0.35
1.4
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
P
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
0.8
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: MCPH6
7022A-006
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
2.0
0.15
MCH6602-TL-E
Packing Type : TL
Marking
FB
6
5
4
3
0 to 0.02
TL
1
2
0.65
0.3
Electrical Connection
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
1
2
3
4
6 : Drain1
MCPH6
1
2
3
6
5
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM TC-00002986/71112 TKIM/12407 TIIM TC-00000415/70306/ No.6445-1/6
42806PE MSIM TB-00002288/30300 TS (KOTO) TA-2509
MCH6602
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
(BR)DSS
D
GS
I
V
=30V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
1.3
μ
GSS
GS DS
V
(off)
|
V
=10V, I =100
A
μ
0.4
V
GS
yfs
DS
D
Forward Transfer Admittance
V
=10V, I =80mA
D
0.15
0.22
2.9
S
|
DS
R
R
R
(on)1
(on)2
(on)3
I
=80mA, V =4V
3.7
5.2
Ω
DS
DS
DS
D GS
Static Drain to Source On-State Resistance
I
D
=40mA, V =2.5V
GS
3.7
Ω
I
D
=10mA, V =1.5V
GS
6.4
12.8
Ω
Input Capacitance
Ciss
7.0
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=10V, f=1MHz
5.9
DS
2.3
t
t
t
t
(on)
19
d
r
65
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
155
120
1.58
0.26
0.31
0.87
d
f
Total Gate Charge
Qg
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=10V, V =10V, I =150mA
GS
D
V
SD
I =150mA, V =0V
S GS
1.2
Switching Time Test Circuit
V
=15V
DD
V
IN
4V
0V
I
=80mA
L
D
R =187.5Ω
D
V
OUT
V
IN
PW=10μs
D.C.≤1%
G
P.G
MCH6602
50Ω
S
Ordering Information
Device
Package
MCPH6
Shipping
3,000pcs./reel
memo
MCH6602-TL-E
Pb-Free
No.6445-2/6
MCH6602
I
D
-- V
I
D
-- V
GS
DS
0.30
0.25
0.20
0.15
0.10
0.16
V
=10V
DS
0.14
0.12
0.10
0.08
3.5V
4.0V
V
=1.5V
GS
0.06
0.04
0.05
0
0.02
0
0
0.1
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT00030
IT00029
Gate to Source Voltage, V
GS
-- V
Drain to Source Voltage, V
-- V
DS
R
(on) -- I
R
(on) -- V
GS
DS
D
DS
10
7
10
9
Ta=25°C
V
=4V
GS
8
7
5
Ta=75°C
25°C
6
80mA
5
4
3
2
3
2
I =40mA
D
--25°C
1
0
1.0
0.01
2
2
2
3
3
3
5
7
2
3
5
0
1
2
3
4
5
6
7
8
9
10
0.1
IT00031
Gate to Source Voltage, V
-- V
Drain Current, I -- A
IT00032
GS
D
R
(on) -- I
R
(on) -- I
DS
D
DS
D
10
100
V
=2.5V
V
=1.5V
GS
GS
7
5
7
5
3
2
Ta=75°C
25°C
--25°C
10
Ta=75°C
--25°C
3
2
7
5
3
2
25°C
1.0
1.0
0.001
2
3
5
7
2
3
5
5
7
2
3
5
0.01
0.1
0.01
IT00033
IT00034
Drain Current, I -- A
Drain Current, I -- A
D
D
R
(on) -- Ta
| yfs | -- I
DS
D
1.0
7
6
V
=10V
DS
7
5
25°C
3
2
5
4
3
2
0.1
7
5
3
2
1
0
0.01
0.01
--60 --40 --20
0
20
40
60
80 100 120 140 160
5
7
2
3
5
0.1
Drain Current, I -- A
Ambient Temperature, Ta -- °C
IT00035
IT00036
D
No.6445-3/6
MCH6602
I
S
-- V
SW Time -- I
SD
D
1.0
1000
V
V
=15V
V
=0V
DD
=4V
GS
7
7
GS
5
5
3
2
3
2
t
f
100
0.1
7
5
7
5
t
r
3
2
3
2
t (on)
d
0.01
0.5
10
0.01
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
2
3
5
7
2
0.1
Diode Forward Voltage, V
SD
Ciss, Coss, Crss -- V
-- V
IT00038
Drain Current, I -- A
D
V
-- Qg
GS
DS
10
100
f=1MHz
V
=10V
DS
7
9
8
7
I =150mA
D
5
3
2
6
5
4
3
2
1
0
10
Ciss
7
5
Coss
3
2
Crss
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain to Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
IT00039
IT00040
DS
A S O
P
D
-- Ta
1.0
0.8
0.6
0.4
3
2
I
=1.4A(PW
≤10μs)
DP
1.0
7
5
I =0.35A
D
3
2
Operation in
this area is
limited by R (on).
0.1
7
5
DS
0.2
0
3
2
Ta=25
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
°C
0.01
2
3
5
7
2
3
5
0
20
40
60
80
100
120
140
160
1.0
10
Drain to Source Voltage, V
DS
-- V
IT01117
Ambient Temperature, Ta -- °C
IT01118
No.6445-4/6
MCH6602
Outline Drawing
Land Pattern Example
MCH6602-TL-E
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.4
0.65 0.65
No.6445-5/6
MCH6602
Note on usage : Since the MCH6602 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6445-6/6
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