MCH6602 [SANYO]
Ultrahigh-Speed Switching Applications; 超高速开关应用
| 型号： | MCH6602 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Ultrahigh-Speed Switching Applications |
| 文件： | 总4页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:ENN6445
N-Channel Silicon MOSFET
MCH6602
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit:mm
· Low ON resistance.
· Ultrahigh-speed swithcing.
· 2.5V drive.
2173
[MCH6602]
· Composite type with 2 MOSFETs contained in one
package, facilitating high-density mounting.
0.15
0.3
5
6
1
4
3
2
0.65
2.0
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
30
±10
V
V
DSS
Gate-to-Source Voltage
Drain Current (DC)
V
GSS
I
0.35
A
D
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2×0.8mm) 1unit
1.4
A
DP
P
D
Tch
0.8
W
˚C
150
˚C
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
D GS
V
µA
µA
V
(BR)DSS
I
V
V
V
V
I
=30V, V =0
10
DSS
DS
GS
DS
DS
GS
I
=±8V, V =0
DS
±10
1.3
GSS
V
(off)
=10V, I =100µA
D
0.4
GS
| yfs |
Forward Transfer Admittance
=10V, I =80mA
D
0.15
0.22
S
Ω
R
(on)1
=80mA, V =4V
GS
2.9
3.7
6.4
3.7
5.2
DS
DS
DS
D
Ω
Static Drain-to-Source On-State Resistance
R
R
(on)2
(on)3
I
I
=40mA, V =2.5V
GS
=10mA, V =1.5V
GS
D
D
Ω
12.8
Marking : FB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2509 No.6445-1/4
MCH6602
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Input Capacitance
Ciss
Coss
Crss
V
V
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
7.0
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
5.9
2.3
t (on)
d
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
19
t
65
r
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
155
120
1.58
0.26
0.31
0.87
Total Gate Charge
Qg
V
V
V
=10V, V =10V, I =150mA
GS
=10V, V =10V, I =150mA
GS
=10V, V =10V, I =150mA
GS
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Qgs
Qgd
D
D
V
I =150mA, V =0
1.2
SD
S
GS
Electrical Connection
Switching Time Test Circuit
V
=15V
DD
D1
G2
S2
V
I
=80mA
L
IN
D
4V
0V
R =187.5Ω
D
V
OUT
V
IN
PW=10µs
D.C.≤1%
G
S1
G1
D2
P. G
MCH6602
50Ω
(Top view)
S
I
-- V
GS
I
-- V
D
D
DS
0.30
0.16
V =10V
DS
0.14
0.12
0.10
0.08
3.5V
4.0V
0.25
0.20
0.15
0.10
V =1.5V
GS
0.06
0.04
0.05
0
0.02
0
0
0.1
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
Drain-to-Source Voltage, V
– V
Gate-to-Source Voltage, V
– V
DS
GS
IT00029
IT00030
R
DS
(on) -- V
R
DS
(on) -- I
GS
D
10
7
10
9
V =4V
GS
Ta=25°C
8
7
5
Ta=75°C
25°C
6
80mA
5
4
3
2
3
2
I =40mA
D
--25°C
1
0
1.0
0.01
2
3
5
7
2
3
5
0
1
2
3
4
5
6
7
8
9
10
0.1
Gate-to-Source Voltage, V
– V
GS
Drain Current, I – A
IT00031
D
IT00032
No.6445-2/4
MCH6602
R
DS
(on) -- I
R
DS
(on) -- I
D
D
10
100
V =2.5V
GS
V =1.5V
GS
7
5
7
3
2
Ta=75°C
25°C
5
--25°C
10
Ta=75°C
--25°C
3
2
7
5
3
2
25°C
1.0
1.0
0.001
2
3
5
7
2
3
5
2
3
5
7
2
3
5
0.01
0.1
D
Drain Current,0I.01– A
Drain Current, I – A
D
IT00033
IT00034
R
DS
(on) -- Ta
yfs -- I
D
1.0
7
6
V =10V
DS
7
5
25°C
3
2
5
4
3
2
0.1
7
5
3
2
1
0
0.01
0.01
--60 --40 --20
0
20
40
60
80 100 120 140 160
2
3
5
7
2
3
5
Drain Current, I0.1 – A
Ambient Temperature, Ta – ˚C
D
IT00035
IT00036
I
-- V
SD
SW Time -- I
D
F
1.0
1000
V
V
=15V
=4V
GS
V =0
GS
DD
7
5
7
5
3
2
3
2
t
f
100
0.1
7
5
7
5
t
r
3
2
3
2
t (on)
d
0.01
0.5
10
0.01
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
2
3
5
7
2
0.1
Drain Current, I – A
D
Diode Forward Voltage, V
SD
– V
IT00038
Ciss, Coss, Crss -- V
V
-- Qg
GS
DS
10
100
f=1MHz
V
=10V
DS
7
9
8
7
I =150mA
D
5
3
2
6
5
4
3
2
1
0
10
Ciss
7
5
Coss
3
2
Crss
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Total Gate Charge, Qg – nC
Drain-to-Source Voltage, V
– V
DS
IT00039
IT00040
No.6445-3/4
MCH6602
A S O
P
-- Ta
D
1.0
0.8
0.6
0.4
3
2
I
=1.4A
100µs
DP
1.0
7
5
I =0.35A
D
3
2
Operation in
this area is
0.1
7
5
limited by R (on).
DS
0.2
0
3
2
Ta=25°C
Single pulse
1unit
Mounted on a ceramic board (900mm2×0.8mm)
0.01
2
3
5
7
2
3
5
0
20
40
60
80
100
120
140
160
1.0
10
Drain-to-Source Voltage, V
DS
– V
Ambient Temperature, Ta – ˚C
IT01117
IT01118
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6445-4/4
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