FDMC8327L [ONSEMI]
N 沟道，Power Trench® MOSFET，40V，14A，9.7mΩ;
| 型号： | FDMC8327L |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，40V，14A，9.7mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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October 2013
FDMC8327L
N-Channel PowerTrench® MOSFET
40 V, 14 A, 9.7 mΩ
Features
General Description
Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A
Low Profile - 0.8mm max in Power 33
100% UIL test
Application
RoHS Compliant
DC-DC Conversion
Bottom
D D
Top
7
S
S
D
D
D
D
8
2
6
5
S
D
D
G
G S
S S
1
3 4
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
V
V
±20
Drain Current - Continuous (Package limited)
- Continuous (Silicon limited)
- Continuous
TC = 25 °C
C = 25 °C
14
T
43
ID
A
TA = 25 °C
(Note 1a)
(Note 3)
12
- Pulsed
60
EAS
Single Pulse Avalanche Energy
Power Dissipation
25
30
mJ
W
TC = 25 °C
TA = 25 °C
PD
Power Dissipation
(Note 1a)
2.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
4.2
53
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ”
Tape Width
12 mm
Quantity
FDMC8327L
FDMC8327L
Power 33
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C2
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
D = 250 μA, referenced to 25 °C
40
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
22
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0
1.7
-5
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
GS = 10 V, ID = 12 A
Static Drain to Source On Resistance VGS = 4.5 V, ID = 10 A
VGS = 10 V, ID = 12 A, TJ = 125 °C
VDD = 5 V, ID = 12 A
mV/°C
V
7.4
9.4
11
9.7
rDS(on)
gFS
12.5
14.5
mΩ
Forward Transconductance
52
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1235 1850
pF
pF
pF
Ω
VDS = 20 V, VGS = 0 V,
f = 1 MHZ
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
347
21
520
35
0.1
0.6
1.3
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
8.4
2.2
20
17
10
32
10
26
14
ns
ns
VDD = 20 V, ID = 12 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
2.2
18.5
9.7
3.3
2.6
ns
Qg(TOT)
Qg(TOT)
Qgs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10 V
VGS = 0V to 5 V
nC
nC
nC
nC
VDD = 20 V,
D = 12 A
I
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 1.8 A
(Note 2)
(Note 2)
0.7
0.8
32
1.2
1.3
51
Source to Drain Diode Forward
Voltage
VSD
V
VGS = 0 V, IS = 12 A
trr
Reverse Recovery Time
ns
IF = 12 A, di/dt = 100 A/s
Qrr
Reverse Recovery Charge
10
20
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θCA
θJA
θJC
the user's board design.
a.
53 °C/W when mounted on a
1 in pad of 2 oz copper
b.
125 °C/W when mounted on
a minimum pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T = 25 °C; N-ch: L = 0.3 mH, I = 13 A, V = 36 V, V = 10 V.
J
AS
DD
GS
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C2
2
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
60
4
3
2
1
0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 4.5 V
VGS = 4 V
50
VGS = 3 V
VGS = 3.5 V
40
30
20
10
0
VGS = 3.5 V
VGS = 4 V
VGS = 3 V
VGS = 10 V
VGS = 4.5 V
VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.0
0.3
0.6
0.9
1.2
1.5
0
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
30
1.7
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 12 A
GS = 10 V
ID = 12 A
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
25
20
15
10
5
TJ = 125 o
C
TJ = 25 o
C
0
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C2
3
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
60
100
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
50
VDS = 5 V
40
TJ = 150 o
C
TJ = 150 o
C
1
TJ = 25 o
C
30
20
10
0
TJ = 25 o
C
0.1
TJ = -55 o
C
0.01
TJ = -55 o
C
0.001
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
10
8
10000
1000
100
10
ID = 12 A
Ciss
VDD = 20 V
6
Coss
VDD = 16 V
VDD = 24 V
4
Crss
2
f = 1 MHz
VGS = 0 V
0
1
0.1
0
4
8
12
16
20
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C2
4
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
50
40
30
20
10
0
20
10
VGS = 10 V
TJ = 25 o
C
TJ = 100 o
C
VGS = 4.5 V
TJ = 125 oC
Limited by package
50
RθJC = 4.2 oC/W
100
TC, CASE TEMPERATURE (oC)
1
0.01
25
75
125
150
0.1
1
10
30
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
100
10
300
100
1
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
0.1
0.01
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
1 s
10 s
DC
R
θJA = 125 oC/W
TA = 25 oC
1
0.5
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
0.01
0.1
1
10
100200
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C2
5
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
SINGLE PULSE
1
θJA = 125 oC/W
t
2
R
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
0.001
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C2
6
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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