FDMC8554 [ONSEMI]
N 沟道，Power Trench® MOSFET，20V，16.5A，5mΩ;
| 型号： | FDMC8554 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，20V，16.5A，5mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DS
DS(ON)
20 V
5 mW @ 10 V
16.5 A
6.4 mW @ 4.5 V
20 V, 16.5 A, 5 mW
Pin 1
G
S
FDMC8554
S
S
D
General Description
D
D
D
This N−Channel MOSFET is a rugged gate version of onsemi’s
advanced Power Trench process. It has been optimized for power
management applications.
Top
Bottom
WDFN8 3.3x3.3, 0.65P
CASE 511DH
Features
• Max R
• Max R
= 5 mW at V = 10 V, I = 16.5 A
GS D
DS(on)
MARKING DIAGRAM
= 6.4 mW at V = 4.5 V, I = 14 A
DS(on)
GS
D
• Low Profile − 1 mm Max in Power 33
FDMC
8554
• This Device is Pb−Free, Halide Free and is RoHS Compliant
ALYW
Applications
• DC−DC Conversion
FDMC8554 = Device Code
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
A
= Assembly Site
A
L
YW
= Wafer Lot Number
= Assembly Start Week
Symbol
Parameter
Drain to Source Voltage
Value
20
Unit
V
V
DS
V
GS
Gate to Source Voltage
20
V
PIN ASSIGNMENT
I
Drain Current
– Continuous
A
D
T
= 25°C
16.5
16.5
36
C
– Continuous (Note 1a)
T = 25°C
A
– Pulsed
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
P
Power Dissipation
T
= 25°C
C
41
W
D
Power Dissipation (Note 1a)
T = 25°C
A
2.0
T , T
Operating and Storage Junction
Temperature Range
–55 to
+150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
N−Channel MOSFET
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
3
Unit
°C/W
°C/W
ORDERING INFORMATION
R
Thermal Resistance, Junction to Case
q
JC
†
Device
Package
Shipping
R
Thermal Resistance, Junction to Ambient
(Note 1a)
60
q
JA
WDFN8
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
FDMC8554
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2023 − Rev. 3
FDMC8554/D
FDMC8554
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
20
−
−
−
V
DSS
D
GS
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
15.7
mV/°C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 16 V, V = 0 V
−
−
−
−
−
−
1
mA
DSS
GS
= 16 V, V = 0 V, T = 125°C
100
100
GS
J
I
Gate to Source Leakage Current
=
20 V, V = 0 V
nA
GSS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
1.8
3.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−6.1
−
mV/°C
GS(th)
J
D
R
Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 16.5 A
−
−
−
−
3.6
4.6
5.4
62
5.0
6.4
7.1
−
mW
DS(on)
D
= 4.5 V, I = 14 A
D
= 10 V, I = 16.5 A, T = 125°C
D
J
g
FS
= 5 V, I = 16.5 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 10 V, V = 0 V,
−
−
−
−
2540
795
510
1.2
3380
1060
765
−
pF
pF
pF
W
iss
DS
GS
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1 MHz
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= 10 V, I = 16.5 A,
−
−
−
−
−
−
−
−
13
10
32
7
24
20
51
14
62
34
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 Ω
GEN
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge at 10V
Total Gate Charge at 4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 10 V, I = 16.5 A
44
24
8.5
10
nC
nC
nC
nC
g(TOT)
g(TOT)
D
Q
gs
Q
−
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 16.5 A (Note 2)
−
−
−
0.8
31
22
1.3
47
33
V
SD
GS
S
t
I = 16.5 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
b) 135°C/W when mounted on
a) 60°C/W when mounted on
2
a minimum pad of 2 oz copper.
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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2
FDMC8554
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
3
200
150
V
= 5 V
V
= 4 V
V
GS
= 3.5 V
GS
GS
V
= 4.5 V
= 4 V
GS
V
= 10 V
GS
V
GS
= 4.5 V
2
1
0
V
= 5 V
V
GS
GS
100
50
0
V
GS
= 3.5 V
V
GS
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
5
0
1
2
3
4
0
50
100
150
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
20
15
10
5
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
D
= 16.5 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
T = 125°C
J
T = 25°C
J
I
V
= 16.5 A
D
= 10 V
GS
0
−75 −50 −25
0
25 50 75 100 125 150
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
100
75
50
25
0
100
10
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
DD
= 5 V
T = 150°C
J
1
T = 25°C
J
T = 150°C
J
0.1
0.01
1E−3
T = −55°C
J
T = 25°C
J
T = −55°C
J
0.0
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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3
FDMC8554
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
5000
I
D
= 16.5 A
V
DD
= 5 V
C
C
iss
oss
1000
6
V
DD
= 10 V
4
C
rss
V
DD
= 15 V
2
f = 1 MHz
= 0 V
V
GS
0
100
0
10
20
30
40
50
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
20
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to
SourceVoltage
40
10
80
60
40
20
0
V
= 10 V
GS
T = 25°C
J
T = 125°C
J
LIMITED BY PACKAGE
V
GS
= 4.5 V
R
= 3°C/W
q
JC
1
10−2
10−1
100
101
102
103
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
100
10
300
100
10
T = 25°C
FOR TEMPERATURES
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
R
LIMITED
V
= 10 V
A
DS(on)
GS
1 ms
150 * TA
10 ms
100 ms
Ǹ
I + I25ƪ ƫ
1
125
SINGLE PULSE
T = MAX RATED
R
1 s
10 s
DC
0.1
J
SINGLE PULSE
= 135°C/W
= 135°C/W
q
JA
1
0.5
R
T = 25°C
q
JA
A
0.01
10−3
10−1
100
101
102
103
0.01
0.1
1
10
100
10−2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
FDMC8554
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
t
1
t
2
NOTES:
DUTY FACTOR, D = t / t
SINGLE PULSE
= 135°C/W
1
2
0.01
PEAK T = P
x Z
x R
+ T
JA A
R
q
q
q
J
DM
JA
JA
0.002
10−3
10−2
10−1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05 (4X)
(0.79)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05 (3X)
8
5
0.35 0.05 (8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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