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February 2016

FDMC8588DC

N-Channel Dual Cool^TM33 PowerTrench^®MOSFET

25 V, 40 A, 5.7 mΩ

Features

General Description

Dual Cool^TMTop Side Cooling PQFN package

Max r_DS(on)= 5.7 mΩ at V_GS= 4.5 V, I_D= 17 A

State-of-the-art switching performance

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers. It has been optimized

for low gate charge, low r_DS(on), fast switching speed and body

diode reverse recovery performance.

Lower output capacitance, gate resistance, and gate charge

boost efficiency

Applications

Shielded gate technology reduces switch node ringing and

increases immunity to EMI and cross conduction

High side switching for high end computing

RoHS Compliant

High power density DC-DC synchronous buck converter

G

Pin 1

S

D

S

D

S

D

Pin 1

D

G

Dual Cool^TM33

Bottom

Top

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

(Note 5)

(Note 4)

25

V

±12

Drain Current - Continuous (Package limited) T_C= 25 °C

40

- Continuous (Silicon Limited)

- Continuous

T

_C= 25 °C

73

I_D

A

(Note 1a)

(Note 3)

17

- Pulsed

60

E_AS

Single Pulse Avalanche Energy

29

41

mJ

W

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

(Note 1a)

3.0

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

(Top Source)

(Bottom Drain)

(Note 1a)

7.0

3.0

42

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 1b)

105

17

°C/W

(Note 1i)

(Note 1j)

26

(Note 1k)

12

Package Marking and Ordering Information

Device Marking

Device

Package

Dual Cool^TM33

Reel Size

Tape Width

12 mm

Quantity

08DC

FDMC8588DC

13 ’’

3000 units

FDMC8588DC Rev.1.1

www.fairchildsemi.com

1

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 μA , V_GS= 0 V

25

V

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

I

_D= 250 μA , referenced to 25 °C

5

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

V_DS= 20 V, V_GS= 0 V

1

μA

Gate to Source Leakage Current, Forward V_GS= 12 V, V_DS= 0 V

100

nA

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 μA

_D= 250 μA , referenced to 25 °C

_GS= 10 V, I_D= 18 A

0.8

1.2

-4

1.8

V

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

I

mV/°C

V

3.6

4.1

5.5

103

5.0

5.7

7.6

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= 4.5 V, I_D= 17 A

mΩ

V_GS= 10 V, I_D= 18 A,T_J= 125 °C

V_DD= 5 V, I_D= 17 A

S

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

1695

493

63

pF

Ω

V_DS= 13 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.4

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

8

3

ns

V_DD= 13 V, I_D= 17A,

V

_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

25

2

ns

Q_g(TOT)

Q_gs

Q_gd

Total Gate Charge at 4.5V

Total Gate Charge

Gate to Drain “Miller” Charge

12

3.0

nC

V_DD= 13 V, I_D= 17 A

Drain-Source Diode Characteristics

V

_GS= 0 V, I_S= 2 A

(Note 2)

0.7

0.8

25

1.2

V

V_SD

Source to Drain Diode Forward Voltage

V_GS= 0 V, I_S= 17 A

t_rr

Reverse Recovery Time

ns

nC

I_F= 17 A, di/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

10

FDMC8588DC Rev.1.1

www.fairchildsemi.com

2

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

(Top Source)

(Bottom Drain)

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1d)

(Note 1e)

(Note 1f)

7.0

3.0

42

105

29

40

19

23

30

79

17

26

12

16

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1g)

(Note 1h)

(Note 1i)

(Note 1j)

(Note 1k)

(Note 1l)

Notes:

2

1. R

is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

b.

105 °C/W when mounted on

a minimum pad of 2 oz copper

a.

42 °C/W when mounted on a

1 in pad of 2 oz copper

2

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in pad of 2 oz copper

d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

2

e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in pad of 2 oz copper

f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2

g. 200FPM Airflow, No Heat Sink,1 in pad of 2 oz copper

h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper

2

i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in pad of 2 oz copper

j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper

2

k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in pad of 2 oz copper

l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E of 29 mJ is based on starting T = 25 °C, L = 1.2 mH, I = 7 A, V = 23 V, V = 10V. 100% tested at L = 0.1 mH, I = 16 A.

AS

J

AS

DD

GS

AS

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

5. The continuous Vds rating is 25V; however, a pulse of 28 V peak voltage for no longer than 3ns duration at 500KHz frequency can be applied.

FDMC8588DC Rev.1.1

www.fairchildsemi.com

3

Typical Characteristics T_J= 25°C unless otherwise noted

60

3.0

2.5

2.0

1.5

1.0

0.5

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 10 V

50

V_GS= 4.5 V

V_GS= 4 V

V_GS= 2.5 V

40

V_GS= 3 V

30

V_GS= 4 V

V_GS= 3 V

V_GS= 2.5 V

20

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

10

V_GS= 10 V

50

V_GS= 4.5 V

40

0

0.0

0.2

0.4

0.6

0

10

20

30

60

I_D, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.6

20

I_D= 17 A

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 10 V

1.4

1.2

1.0

0.8

0.6

15

10

5

I_D= 17 A

T_J= 125 ^o

C

T_J= 25 ^o

C

0

-75 -50 -25

0

25 50 75 100 125 150

0

2

4

6

8

10

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure4. On-Resistance vs Gate to

Source Voltage

Figure 3. Normalized On Resistance

vs Junction Temperature

60

V_GS= 0 V

PULSE DURATION = 80 μs

50

40

30

20

10

0

DUTY CYCLE = 0.5% MAX

T_J= 150 ^o

C

V_DS= 5 V

10

1

T_J= 25 ^oC

T_J= 150 ^o

C

T_J= 25 ^o

C

T_J= -55 ^o

C

T_J= -55 ^o

C

0.1

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDMC8588DC Rev.1.1

www.fairchildsemi.com

4

Typical Characteristics T_J= 25°C unless otherwise noted

4.5

3000

1000

C_iss

I_D= 17 A

V_DD= 10 V

3.6

V_DD= 13 V

C_oss

2.7

V_DD= 15 V

1.8

C_rss

100

30

0.9

0.0

f = 1 MHz

V_GS= 0 V

0

3

6

9

12

15

0.1

1

10

30

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

50

10

80

60

40

20

0

V_GS= 10 V

T_J= 25 ^oC

T_J= 100 ^oC

Limited by Package

V_GS= 4.5 V

R_θJC= 3.0 ^oC/W

T_J= 125 ^o

C

1

0.001

0.01

0.1

1

10

100

25

50

75

100

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE (ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

100

10

1000

100 μs

100

10

1 ms

THIS AREA IS

1

10 ms

LIMITED BY r

DS(on)

100 ms

1 s

SINGLE PULSE

R_θJA= 105 ^oC/W

0.1

T

_J= MAX RATED

10 s

DC

R_θJA= 105 ^oC/W

T_A= 25 ^oC

T

_A= 25 ^oC

1

0.01

0.5

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

10⁰

10¹

0.01

0.1

1

10

100200

100 1000

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

FDMC8588DC Rev.1.1

www.fairchildsemi.com

5

Typical Characteristics T_J= 25°C unless otherwise noted

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

0.1

P

DM

0.05

0.02

0.01

t

1

0.01

t

2

SINGLE PULSE

NOTES:

DUTY FACTOR: D = t /t

_θJA= 105 ^oC/W

1

2

R

PEAK T = P

J

x Z

x R

+ T

DM

θJA

θJA A

1E-3

5E-4

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

10⁰

10¹

100

1000

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

FDMC8588DC Rev.1.1

www.fairchildsemi.com

6

3.40

2.37 MIN

SYM

3.30

A

KEEP

OUT

AREA

PKG

C

B

L

8

5

8

5

(0.45)

2.15 MIN

PKG

C

L

3.30

C

L

(0.40)

(0.65)

0.70 MIN

0.42 MIN

1

4

1

4

SEE DETAIL 'A'

0.65

1.95

LAND PATTERN

RECOMMENDATION

1.95

0.10 C A B

0.32±0.05

1

0.65

4

NOTES: UNLESS OTHERWISE SPECIFIED

0.40±0.10

A) PACKAGE STANDARD REFERENCE:

JEDEC MO-240, ISSUE A, VAR. BA,

DATED OCTOBER 2002.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS DO NOT INCLUDE BURRS

OR MOLD FLASH. MOLD FLASH OR

BURRS DOES NOT EXCEED 0.10MM.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M-2009.

(0.20)

PKG

3.30±0.10

2.00±0.10

C

L

8

5

(0.39)

(2.27)

E) DRAWING FILE NAME: PQFN08CREV3

0.52

3.30±0.10

0.10 C

1.00±0.05

0.08 C

0.05

0.00

C

0.20±0.025

SEATING

PLANE

SCALE: 2X

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	FDMC8588DC
厂家：	ONSEMI
描述：	25V N沟道PowerTrench® MOSFET 开关脉冲光电二极管晶体管
文件：	总9页 (文件大小：467K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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