FDMC8462 [ONSEMI]
N 沟道 Power Trench® MOSFET 40V，20A，5.8mΩ;
| 型号： | FDMC8462 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 Power Trench® MOSFET 40V，20A，5.8mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：486K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
V
r
MAX
I
D
MAX
DS
DS(ON)
40 V
5.8 mW @ 10 V
8.0 mW @ 4.5 V
20 A
40 V, 20 A, 5.8 mW
Pin 1
S
S
FDMC8462
S
G
General Description
D
D
D
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance and yet maintain superior switching
performance.
D
Top
Bottom
PQFN8 3.3 y 3.3, 0.65P
(Power 33)
CASE 483AK
Features
• Max r
= 5.8 mW at V = 10 V, I = 13.5 A
GS D
= 8.0 mW at V = 4.5 V, I = 11.8 A
GS D
DS(on)
ELECTRICAL CONNECTION
Max r
DS(on)
• Low Profile − 1 mm Max in Power 33
• 100% UIL Tested
• Pb−Free, Halide Free and RoHS Compliant
D
D
5
6
4
3
G
S
Applications
• DC − DC Conversion
D
D
7
8
2
1
S
S
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Value
40
Unit
V
N−Channel MOSFET
V
DS
V
GS
Gate to Source Voltage
20
V
MARKING DIAGRAM
I
D
Drain Current
A
– Continuous (Package Limited)
– Continuous (Silicon Limited)
– Continuous (Note 1a)
– Pulsed
T
T
A
= 25°C
= 25°C
20
64
14
50
C
C
ZXYYKK
FDMC
8462
T = 25°C
E
AS
Single Pulse Avalanche Energy (Note 3)
216
mJ
W
P
D
Power Dissipation
Power Dissipation (Note 1a)
T
= 25°C
C
41
2.0
T = 25°C
A
Z
XYY
KK
= Assembly Plant Code
= 3−Digit Date Code (Year and Week)
= 2−Digits Lot Run Traceability Code
T , T
Operating and Storage Junction
Temperature Range
–55 to
+150
°C
J
STG
FDMC8462 = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction to Case
3
°C/W
q
JC
R
Thermal Resistance,
Junction to Ambient (Note 1a)
53
°C/W
q
JA
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
March, 2023 − Rev. 3
FDMC8462/D
FDMC8462
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
= 250 mA, V = 0 V
40
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
I = 250 mA, Referenced to 25_C
−
31
mV/_C
D
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 0 V, V = 32 V
−
−
−
−
1
mA
DSS
GSS
GS
DS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = 250 mA
1.0
2.0
3.0
V
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
I = 250 mA, Referenced to 25_C
D
−
−6.6
−
mV/_C
DVGS(th)
DTJ
r
Static Drain to Source On–Resistance
V
GS
V
GS
V
GS
= 10 V, I = 13.5 A
−
−
−
4.7
6.4
7.1
5.8
8.0
9.3
mW
DS(on)
D
= 4.5 V, I = 11.8 A
D
= 10 V, I = 13.5 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DD
= 5 V, I = 13.5 A
−
60
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 20 V, V = 0 V, f = 1 MHz
−
−
−
−
2000
545
80
2660
725
120
−
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1 MHz
2.7
g
SWITCHING CHARACTERISTICS
t
Turn–On Delay Time
Rise Time
V
V
= 20 V, I = 13.5 A,
−
−
−
−
−
−
−
−
12
4
21
10
43
10
43
21
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 W
GEN
t
r
t
Turn–Off Delay Time
Fall Time
27
3
ns
d(off)
t
f
ns
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 20 V, I = 13.5 A
30
15
6
nC
nC
nC
nC
g
DD
D
= 0 V to 4.5 V, V = 20 V, I = 13.5 A
DD
D
Q
Gate to Source Charge
= 20 V, I = 13.5 A
D
gs
Q
Gate to Drain “Miller” Charge
5
−
gd
DRAIN–SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 13.5 A (Note 2)
−
−
−
−
0.8
0.7
35
1.3
1.2
57
V
SD
GS
S
= 0 V, I = 1.7 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 13.5 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
20
32
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a) 53°C/W when mounted
b) 125°C/W when mounted
on a minimum pad of 2 oz copper
2
on a 1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
3. Starting T = 25°C; N−ch: L = 3 mH, I = 12 A, V = 40 V, V = 10 V.
J
AS
DD
GS
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2
FDMC8462
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
50
40
5.0
4.5
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
= 10 V
GS
V
GS
= 3 V
V
= 3.5 V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
GS
V
GS
= 4.5 V
30
20
10
0
V = 3.5 V
GS
V
GS
= 4 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 4 V
V
= 3 V
GS
V
GS
= 4.5 V
30
V
GS
= 10 V
20
0
10
0.5
1.0
1.5
40
50
0.0
I , Drain Current (A)
D
V
DS
, Drain to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= 13.5 A
D
I
D
= 13.5 A
= 10 V
GS
20
15
10
5
T = 125°C
J
T = 25°C
J
0
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
10
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (5C)
J
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate
vs. Junction Temperature
to Source Voltage
50
10
50
40
30
20
10
0
V
GS
= 0 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
DS
= 5 V
1
T = 150°C
J
T = 25°C
J
T = 25°C
J
T = 150°C
J
0.1
T = −55°C
J
0.01
T = −55°C
J
0.001
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
4
5
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
FDMC8462
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
5000
1000
10
8
I
D
= 13.5 A
V
DD
= 16 V
C
C
iss
V
DD
= 20 V
6
oss
V
DD
= 24 V
4
100
C
rss
f = 1 MHz
= 0 V
2
0
V
GS
10
0
10
Q , Gate Charge (nC)
0.1
1
10
40
5
15
20
25
30
35
V
, Drain to Source Voltage (V)
DS
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
30
10
75
60
45
30
15
V
= 10 V
GS
T = 25°C
J
V
GS
= 4.5 V
T = 125°C
J
Limited by Package
R
= 3°C/W
JC
q
1
0
0.01
0.1
10
100
400
25
50
75
100
125
150
1
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs Case Temperature
100
10
2000
1000
Single pulse
R
= 125°C/W
q
JA
V
GS
= 10 V
T = 25°C
A
1 ms
100
10
10 ms
1
This Area is
Limited by r
100 ms
DS(on)
Single Pulse
T = Max Rated
1 s
0.1
0.01
J
R
10 s
DC
= 125°C/W
q
JA
1
T = 25°C
A
0.5
−4
−3
−2
−1
0.01
0.1
1
10
100
10
10
10
10
1
10
100 1000
t, Pulse Width (s)
V
DS
, Drain to Source Voltage (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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4
FDMC8462
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
Duty Cycle − Descending Order
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
0.01
Notes:
Duty Factor: D = t /t
Single pulse
= 125°C/W
1
2
R
Peak T = P
× Z
× R
q
+ T
JA A
q
q
JA
J
DM
JA
0.001
0.0002
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 13. Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package Type
Reel Size
Tape Width
Shipping
FDMC8462
FDMC8462
PQFN8 3.3 x 3.3, 0.65P
(Power 33)
(Pb−Free/Halide Free)
13”
12 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 3.3X3.3, 0.65P
CASE 483AK
ISSUE B
DATE 12 OCT 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13660G
PQFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
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© Semiconductor Components Industries, LLC, 2019
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