2SC3646 [ONSEMI]

Bipolar Transistor High breakdown voltage and large current capacity;
2SC3646
型号: 2SC3646
厂家: ONSEMI    ONSEMI
描述:

Bipolar Transistor High breakdown voltage and large current capacity

开关 晶体管
文件: 总7页 (文件大小:358K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : EN2005C  
2SA1416/2SC3646  
Bipolar Transistor  
http://onsemi.com  
(–)  
–)  
(
), (  
sat PNP)NPN Single PCP  
100V, ( 1A, Low V  
CE  
Features  
Adoption of FBET, MBIT processes  
High breakdown voltage and large current capacity  
Fast switching speed  
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s  
( ) : 2SA1416  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
(--)120  
(--)100  
(--)6  
Unit  
V
V
CBO  
V
V
CEO  
V
V
EBO  
I
C
(--)1  
A
Collector Current (Pulse)  
I
CP  
(--)2  
A
500  
mW  
W
Collector Dissipation  
P
C
When mounted on ceramic substrate (250mm2 0.8mm)  
1.3  
×
Junction Temperature  
Storage Temperature  
Tj  
150  
C
°
°
Tstg  
--55 to +150  
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package Dimensions  
Product & Package Information  
unit : mm (typ)  
• Package  
: PCP  
7007B-004  
• JEITA, JEDEC  
: SC-62, SOT-89, TO-243  
Minimum Packing Quantity : 1,000 pcs./reel  
Top View  
2SA1416S-TD-E  
2SA1416T-TD-E  
2SC3646S-TD-E  
2SC3646T-TD-E  
4.5  
1.6  
Packing Type: TD  
1.5  
TD  
1
2
3
Marking  
0.4  
0.5  
0.4  
1.5  
3.0  
RANK  
RANK  
2SA1416  
2SC3646  
2
0.75  
Electrical Connection  
2
1 : Base  
2 : Collector  
3 : Emitter  
1
1
Bottom View  
3
3
PCP  
2SA1416  
2SC3646  
Semiconductor Components Industries, LLC, 2013  
September, 2013  
82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/7  
2SA1416 / 2SC3646  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
Emitter Cutoff Current  
I
V
=(--)100V, I =0A  
(--)100  
(--)100  
400*  
nA  
nA  
CBO  
CB  
V =(--)4V, I =0A  
EB  
E
I
EBO  
C
DC Current Gain  
h
V
CE  
=(--)5V, I =(--)100mA  
100*  
FE  
C
Gain-Bandwidth Product  
Output Capacitance  
f
V
=(--)10V, I =(--)100mA  
120  
(13)8.5  
(--0.2)0.1  
(--)0.85  
MHz  
pF  
V
T
CE C  
Cob  
V
CB  
=(--)10V, f=1MHz  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Turn-ON Time  
V
(sat)  
(sat)  
I
C
=(--)400mA, I =(--)40mA  
(--0.6)0.4  
(--)1.2  
CE  
B
V
I
C
=(--)400mA, I =(--)40mA  
V
BE  
B
V
I
C
=(--)10 A, I =0A  
(--)120  
(--)100  
(--)6  
V
μ
(BR)CBO  
E
V
I
C
=(--)1mA, R  
=
V
(BR)CEO  
BE  
V
I =(--)10 A, I =0A  
E
V
μ
(BR)EBO  
C
t
t
t
(80)80  
(700)850  
(40)50  
ns  
ns  
ns  
on  
Storage Time  
See specied Test Circuit.  
stg  
f
Fall Time  
: The 2SA1416 / 2SC3646 are classied by 100mA h as follows :  
*
FE  
Rank  
R
S
T
h
100 to 200  
140 to 280  
200 to 400  
FE  
Switching Time Test Circuit  
I
B1  
PW=20μs  
D.C.1%  
I
B2  
INPUT  
R
B
R
L
V
R
50Ω  
+
+
100μF  
470μF  
--5V  
50V  
I =10I =--10I =400mA  
C
B1  
B2  
(For PNP, the polarity is reversed)  
Ordering Information  
Device  
2SA1416S-TD-E  
2SA1416T-TD-E  
2SC3646S-TD-E  
2SC3646T-TD-E  
Package  
PCP  
Shipping  
memo  
1,000pcs./reel  
1,000pcs./reel  
1,000pcs./reel  
1,000pcs./reel  
PCP  
Pb Free  
PCP  
PCP  
No.2005-2/7  
2SA1416 / 2SC3646  
I
-- V  
I
-- V  
C
CE  
C
CE  
--1.0  
--0.8  
--0.6  
--0.4  
--0.2  
0
1.0  
2SC3646  
2SA1416  
0.8  
0.6  
0.4  
0.2  
0
1mA  
I =0mA  
B
I =0mA  
B
0
0
0
--1  
--2  
--3  
--4  
--5  
0
0
0
7
1
2
3
4
5
Collector-to-Emitter Voltage, V  
-- V  
Collector-to-Emitter Voltage, V -- V  
ITR03527  
CE  
ITR03526  
CE  
I
C
-- V  
I
-- V  
CE  
C
CE  
500  
400  
300  
200  
100  
0
--500  
--400  
--300  
--200  
--100  
0
2SC3646  
2SA1416  
0.5mA  
I =0mA  
B
40  
-- V  
I =0mA  
B
--30  
--10  
--20  
--40  
-- V  
--50  
ITR03528  
10  
20  
30  
50  
ITR03529  
Collector-to-Emitter Voltage, V  
Collector-to-Emitter Voltage, V  
CE  
CE  
I
C
-- V  
I
-- V  
BE  
BE  
C
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--0.2  
0
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
2SA1416  
=--5V  
2SC3646  
V
V
=5V  
CE  
CE  
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
-- V ITR03530  
--1.2  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Base-to-Emitter Voltage, V  
Base-to-Emitter Voltage, V  
-- V ITR03531  
BE  
BE  
h
-- I  
h
-- I  
FE  
C
FE  
C
1000  
1000  
2SA1416  
2SC3646  
7
5
7
5
V
=--5V  
V
CE  
=5V  
CE  
3
2
3
2
25°  
C
25°  
C
100  
7
100  
--25°C  
--25°C  
7
5
5
3
2
3
2
10  
10  
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
1.0  
2
3
7 --0.01  
--0.1  
--1.0  
0.01  
0.1  
ITR03532  
Collector Current, I -- A  
Collector Current, I -- A  
ITR03533  
C
C
No.2005-3/7  
2SA1416 / 2SC3646  
Cob -- V  
CB  
f
-- I  
C
T
3
2
100  
2SA1416 / 2SC3646  
=10V  
2SA1416 / 2SC3646  
f=1MHz  
7
5
V
CE  
2SA1416  
3
2
100  
7
5
2SC3646  
10  
3
2
7
5
3
2
For PNP, minus sign is omitted  
For PNP, minus sign is omitted  
10  
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
100  
2
0.01  
0.1  
1.0  
ITR03538  
1.0  
10  
Collector-to-Base Voltage, V  
-- V  
Collector Current, I -- A  
ITR03539  
CB  
C
V
(sat) -- I  
V
(sat) -- I  
CE C  
CE  
C
--1000  
1000  
2SA1416  
2SC3646  
7
5
7
I
/ I =10  
I
/ I =10  
B
C
B
C
5
3
2
3
2
--100  
100  
7
5
7
5
--25°C  
C
25°  
--25°C  
3
2
3
2
25°  
C
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
2
7 --0.01  
--0.1  
--1.0  
0.01  
0.1  
1.0  
ITR03536  
ITR03537  
Collector Current, I -- A  
Collector Current, I -- A  
C
C
V
(sat) -- I  
V
(sat) -- I  
BE  
C
BE  
C
--10  
10  
2SA1416  
2SC3646  
7
5
7
5
I
/ I =10  
I
/ I =10  
C
B
C
B
3
2
3
2
--1.0  
1.0  
7
5
7
5
25°  
C
75°C  
25°  
C
75°C  
3
3
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
2
7 --0.01  
--0.1  
--1.0  
0.01  
0.1  
1.0  
Collector Current, I -- A  
Collector Current, I -- A  
ITR03534  
ITR03535  
C
C
A S O  
P
C
-- Ta  
1.6  
5
3
2
2SA1416 / 2SC3646  
I
=2A  
CP  
1.4  
1.3  
1.2  
I =1A  
C
1.0  
7
5
1.0  
0.8  
3
2
0.1  
7
0.6  
0.5  
0.4  
5
3
2
For PNP, minus sign is omitted  
2SA1416 / 2SC3646  
0.2  
0
0.01  
Single pulse Ta=25°C  
Mounted on a ceramic board (250mm20.8mm)  
7
5
5
7
2
3
5
7
2
3
5
7
2
0
20  
40  
60  
80  
100  
120  
140  
160  
1.0  
10  
100  
Collector-to-Emitter Voltage, V  
-- V ITR03540  
Ambient Temperature, Ta -- °C  
ITR03541  
CE  
No.2005-4/7  
2SA1416 / 2SC3646  
Bag Packing Specication  
2SA1416S-TD-E, 2SA1416T-TD-E, 2SC3646S-TD-E, 2SC3646T-TD-E  
No.2005-5/7  
2SA1416 / 2SC3646  
Outline Drawing  
Land Pattern Example  
2SA1416S-TD-E, 2SA1416T-TD-E, 2SC3646S-TD-E, 2SC3646T-TD-E  
Mass (g) Unit  
Unit: mm  
0.058  
mm  
* For reference  
2.2  
45°  
45°  
1.0  
1.0  
1.5  
3.0  
No.2005-6/7  
2SA1416 / 2SC3646  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No.2005-7/7  

相关型号:

2SC3646-R

NPN Transistors
KEXIN

2SC3646-T

NPN Transistors
KEXIN

2SC3646R

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89
ETC

2SC3646S

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89
ETC

2SC3646S-TD-E

Bipolar Transistor High breakdown voltage and large current capacity
ONSEMI

2SC3646T

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89
ETC

2SC3646T-TD-E

Bipolar Transistor High breakdown voltage and large current capacity
ONSEMI

2SC3646_15

NPN Transistors
KEXIN

2SC3647

High-Voltage Switching Applications
SANYO

2SC3647

HIGH-VOLTAGE SWITCHING APPLICATIONS
UTC

2SC3647

High-Voltage Switching Applications
KEXIN

2SC3647

Bipolar Transistor
ONSEMI