2SC3646T-TD-E
更新时间:2024-09-18 22:05:32
品牌:ONSEMI
描述:Bipolar Transistor High breakdown voltage and large current capacity
2SC3646T-TD-E 概述
Bipolar Transistor High breakdown voltage and large current capacity 双极性晶体管
2SC3646T-TD-E 数据手册
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PDF下载Ordering number : EN2005C
2SA1416/2SC3646
Bipolar Transistor
http://onsemi.com
(–)
–)
(
), (
sat PNP)NPN Single PCP
100V, ( 1A, Low V
CE
Features
•
Adoption of FBET, MBIT processes
•
•
•
High breakdown voltage and large current capacity
Fast switching speed
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
( ) : 2SA1416
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
(--)120
(--)100
(--)6
Unit
V
V
CBO
V
V
CEO
V
V
EBO
I
C
(--)1
A
Collector Current (Pulse)
I
CP
(--)2
A
500
mW
W
Collector Dissipation
P
C
When mounted on ceramic substrate (250mm2 0.8mm)
1.3
×
Junction Temperature
Storage Temperature
Tj
150
C
°
°
Tstg
--55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SA1416S-TD-E
2SA1416T-TD-E
2SC3646S-TD-E
2SC3646T-TD-E
4.5
1.6
Packing Type: TD
1.5
TD
1
2
3
Marking
0.4
0.5
0.4
1.5
3.0
RANK
RANK
2SA1416
2SC3646
2
0.75
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
1
1
Bottom View
3
3
PCP
2SA1416
2SC3646
Semiconductor Components Industries, LLC, 2013
September, 2013
82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/7
2SA1416 / 2SC3646
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
I
V
=(--)100V, I =0A
(--)100
(--)100
400*
nA
nA
CBO
CB
V =(--)4V, I =0A
EB
E
I
EBO
C
DC Current Gain
h
V
CE
=(--)5V, I =(--)100mA
100*
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=(--)10V, I =(--)100mA
120
(13)8.5
(--0.2)0.1
(--)0.85
MHz
pF
V
T
CE C
Cob
V
CB
=(--)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
(sat)
(sat)
I
C
=(--)400mA, I =(--)40mA
(--0.6)0.4
(--)1.2
CE
B
V
I
C
=(--)400mA, I =(--)40mA
V
BE
B
V
I
C
=(--)10 A, I =0A
(--)120
(--)100
(--)6
V
μ
(BR)CBO
E
V
I
C
=(--)1mA, R
=
V
∞
(BR)CEO
BE
V
I =(--)10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
(80)80
(700)850
(40)50
ns
ns
ns
on
Storage Time
See specified Test Circuit.
stg
f
Fall Time
: The 2SA1416 / 2SC3646 are classified by 100mA h as follows :
*
FE
Rank
R
S
T
h
100 to 200
140 to 280
200 to 400
FE
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
I
B2
INPUT
R
B
R
L
V
R
50Ω
+
+
100μF
470μF
--5V
50V
I =10I =--10I =400mA
C
B1
B2
(For PNP, the polarity is reversed)
Ordering Information
Device
2SA1416S-TD-E
2SA1416T-TD-E
2SC3646S-TD-E
2SC3646T-TD-E
Package
PCP
Shipping
memo
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
PCP
Pb Free
PCP
PCP
No.2005-2/7
2SA1416 / 2SC3646
I
-- V
I
-- V
C
CE
C
CE
--1.0
--0.8
--0.6
--0.4
--0.2
0
1.0
2SC3646
2SA1416
0.8
0.6
0.4
0.2
0
1mA
I =0mA
B
I =0mA
B
0
0
0
--1
--2
--3
--4
--5
0
0
0
7
1
2
3
4
5
Collector-to-Emitter Voltage, V
-- V
Collector-to-Emitter Voltage, V -- V
ITR03527
CE
ITR03526
CE
I
C
-- V
I
-- V
CE
C
CE
500
400
300
200
100
0
--500
--400
--300
--200
--100
0
2SC3646
2SA1416
0.5mA
I =0mA
B
40
-- V
I =0mA
B
--30
--10
--20
--40
-- V
--50
ITR03528
10
20
30
50
ITR03529
Collector-to-Emitter Voltage, V
Collector-to-Emitter Voltage, V
CE
CE
I
C
-- V
I
-- V
BE
BE
C
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
2SA1416
=--5V
2SC3646
V
V
=5V
CE
CE
--0.2
--0.4
--0.6
--0.8
--1.0
-- V ITR03530
--1.2
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, V
Base-to-Emitter Voltage, V
-- V ITR03531
BE
BE
h
-- I
h
-- I
FE
C
FE
C
1000
1000
2SA1416
2SC3646
7
5
7
5
V
=--5V
V
CE
=5V
CE
3
2
3
2
25°
C
25°
C
100
7
100
--25°C
--25°C
7
5
5
3
2
3
2
10
10
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
1.0
2
3
7 --0.01
--0.1
--1.0
0.01
0.1
ITR03532
Collector Current, I -- A
Collector Current, I -- A
ITR03533
C
C
No.2005-3/7
2SA1416 / 2SC3646
Cob -- V
CB
f
-- I
C
T
3
2
100
2SA1416 / 2SC3646
=10V
2SA1416 / 2SC3646
f=1MHz
7
5
V
CE
2SA1416
3
2
100
7
5
2SC3646
10
3
2
7
5
3
2
For PNP, minus sign is omitted
For PNP, minus sign is omitted
10
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
100
2
0.01
0.1
1.0
ITR03538
1.0
10
Collector-to-Base Voltage, V
-- V
Collector Current, I -- A
ITR03539
CB
C
V
(sat) -- I
V
(sat) -- I
CE C
CE
C
--1000
1000
2SA1416
2SC3646
7
5
7
I
/ I =10
I
/ I =10
B
C
B
C
5
3
2
3
2
--100
100
7
5
7
5
--25°C
C
25°
--25°C
3
2
3
2
25°
C
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
2
7 --0.01
--0.1
--1.0
0.01
0.1
1.0
ITR03536
ITR03537
Collector Current, I -- A
Collector Current, I -- A
C
C
V
(sat) -- I
V
(sat) -- I
BE
C
BE
C
--10
10
2SA1416
2SC3646
7
5
7
5
I
/ I =10
I
/ I =10
C
B
C
B
3
2
3
2
--1.0
1.0
7
5
7
5
25°
C
75°C
25°
C
75°C
3
3
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
2
7 --0.01
--0.1
--1.0
0.01
0.1
1.0
Collector Current, I -- A
Collector Current, I -- A
ITR03534
ITR03535
C
C
A S O
P
C
-- Ta
1.6
5
3
2
2SA1416 / 2SC3646
I
=2A
CP
1.4
1.3
1.2
I =1A
C
1.0
7
5
1.0
0.8
3
2
0.1
7
0.6
0.5
0.4
5
3
2
For PNP, minus sign is omitted
2SA1416 / 2SC3646
0.2
0
0.01
Single pulse Ta=25°C
Mounted on a ceramic board (250mm2✕0.8mm)
7
5
5
7
2
3
5
7
2
3
5
7
2
0
20
40
60
80
100
120
140
160
1.0
10
100
Collector-to-Emitter Voltage, V
-- V ITR03540
Ambient Temperature, Ta -- °C
ITR03541
CE
No.2005-4/7
2SA1416 / 2SC3646
Bag Packing Specification
2SA1416S-TD-E, 2SA1416T-TD-E, 2SC3646S-TD-E, 2SC3646T-TD-E
No.2005-5/7
2SA1416 / 2SC3646
Outline Drawing
Land Pattern Example
2SA1416S-TD-E, 2SA1416T-TD-E, 2SC3646S-TD-E, 2SC3646T-TD-E
Mass (g) Unit
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
No.2005-6/7
2SA1416 / 2SC3646
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PS No.2005-7/7
2SC3646T-TD-E 替代型号
型号 | 制造商 | 描述 | 替代类型 | 文档 |
2SC3646 | ONSEMI | Bipolar Transistor High breakdown voltage and large current capacity | 功能相似 |
2SC3646T-TD-E 相关器件
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