2SC3647 [ONSEMI]
Bipolar Transistor; 双极晶体管
| 型号： | 2SC3647 |
| 厂家： | 
ONSEMI |
| 描述： | Bipolar Transistor |
| 文件： | 总7页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN2006D
2SA1417/2SC3647
Bipolar Transistor
(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
http://onsemi.com
Features
•
Adoption of FBET, MBIT processes
•
High breakdown voltage and large current capacity
•
Fast switching speed
•
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs
( ) : 2SA1417
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
(--)120
(--)100
(--)6
Unit
V
V
CBO
V
V
CEO
V
V
EBO
I
C
(--)2
A
Collector Current (Pulse)
I
CP
(--)3
A
500
mW
W
Collector Dissipation
P
C
When mounted on ceramic substrate (250mm2 0.8mm)
1.5
×
Junction Temperature
Storage Temperature
Tj
150
C
°
°
Tstg
--55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SA1417S-TD-E
2SA1417T-TD-E
2SC3647S-TD-E
2SC3647T-TD-E
4.5
1.6
Packing Type: TD
1.5
TD
1
2
3
Marking
0.4
0.5
0.4
1.5
3.0
RANK
RANK
2SA1417
2SC3647
0.75
Electrical Connection
2
2
1 : Base
2 : Collector
3 : Emitter
1
1
Bottom View
3
3
PCP
2SA1417
2SC3647
Semiconductor Components Industries, LLC, 2013
September, 2013
90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/7
2SA1417 / 2SC3647
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
I
V
=(--)100V, I =0A
(--)100
(--)100
400*
nA
nA
CBO
CB
V =(--)4V, I =0A
EB
E
I
EBO
C
DC Current Gain
h
V
CE
=(--)5V, I =(--)100mA
100*
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=(--)10V, I =(--)100mA
120
(25)16
MHz
pF
V
T
CE C
Cob
V
CB
=(--)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
(sat)
(sat)
I
C
=(--)1A, I =(--)100mA
(--0.22)0.13
(--)0.85
(--0.6)0.4
(--)1.2
CE
B
V
I
C
=(--)1A, I =(--)100mA
V
BE
B
V
I
C
=(--)10 A, I =0A
(--)120
(--)100
(--)6
V
μ
(BR)CBO
E
V
I
C
=(--)1mA, R
=
V
∞
(BR)CEO
BE
V
I =(--)10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
(80)80
(750)1000
(40)50
ns
ns
ns
on
Storage Time
See specified Test Circuit.
stg
f
Fall Time
: The 2SA1417 / 2S3647 are classified by 100mA h as follws :
*
FE
Rank
R
S
T
h
100 to 200
140 to 280
200 to 400
FE
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
+
+
50Ω
100μF
= --5V
470μF
V
V
=50V
CC
BE
I =10I = --10I =0.7A
B1 B2
C
For PNP, the polarity is reversed.
Ordering Information
Device
2SA1417S-TD-E
2SA1417T-TD-E
2SC3647S-TD-E
2SC3647T-TD-E
Package
PCP
Shipping
memo
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
PCP
Pb Free
PCP
PCP
No.2006-2/7
2SA1417 / 2SC3647
I
C
-- V
I
-- V
CE
CE
C
--2.0
--1.6
--1.2
--0.8
2.0
2SA1417
2SC3647
1.6
1.2
0.8
2mA
1mA
--0.4
0
0.4
0
--1mA
I =0mA
I =0mA
B
B
0
--1
--2
--3
--4
--5
0
1
2
3
4
5
Collector-to-Emitter Voltage, V
CE
-- V ITR03542
2SA1417
Collector-to-Emitter Voltage, V
CE
-- V ITR03543
2SC3647
I
C
-- V
I
-- V
C CE
CE
1.0
0.8
0.6
0.4
--1.0
--0.8
--0.6
--0.4
1.0mA
0.2
0
--0.2
0
0.5mA
I =0mA
B
I =0mA
B
0
--10
--20
--30
--40
--50
0
0
7
10
20
30
40
50
Collector-to-Emitter Voltage, V
-- V ITR03544
Collector-to-Emitter Voltage, V
CE
-- V ITR03545
CE
I
C
-- V
I
C
-- V
BE
BE
2.4
2.0
1.6
1.2
0.8
--2.4
--2.0
--1.6
--1.2
--0.8
2SA1417
2SC3647
V
= --5V
V
=5V
CE
CE
0.4
0
--0.4
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0.2
0.4
0.6
0.8
1.0
1.2
ITR03547
0
Base-to-Emitter Voltage, V
BE
-- V
Base-to-Emitter Voltage, V -- V
BE
ITR03546
h
-- I
h
-- I
FE
C
FE
C
1000
1000
2SA1417
= --5V
2SC3647
V
7
5
7
V
=5V
CE
CE
5
3
2
3
2
--25°C
100
100
7
7
5
5
3
3
--2 --3
--2 --3
Collector Current, I -- A
--2 --3
ITR03548
2
3
5
7
2
3
5
7
1.0
2
3
--7--0.01
--5 --7--0.1
--5 --7--1.0
0.01
0.1
Collector Current, I -- A
C
ITR03549
C
No.2006-3/7
2SA1417 / 2SC3647
f
-- I
Cob -- V
CB
T
C
3
2
100
2SA1417 / 2SC3647
2SA1417 / 2SC3647
f=1MHz
7
5
V
CE
=10V
100
3
2
7
5
10
3
2
7
5
For PNP minus sign is omitted.
For PNP minus sign is omitted.
3
10
7
2
3
5
7
2
3
5
7
2
3
7
7
7
2
3
5
7
2
3
5
7
100
2
0.01
0.1
1.0
1.0
0.01
0.01
10
Collector Current, I -- A
ITR03550
Collector-to-Base Voltage, V
CB
-- V ITR03551
C
V
(sat) -- I
V
(sat) -- I
CE
C
CE
C
--1000
1000
2SA1417
2SC3647
7
7
5
I
/ I =10
I
/ I =10
C
B
C B
5
3
2
3
2
--100
100
7
5
7
5
3
2
3
2
--25°C
--25°C
--10
--10
10
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
1.0
2
3
7 --0.01
--0.1
--1.0
0.1
Collector Current, I -- A
ITR03552
Collector Current, I -- A
ITR03553
C
C
V
(sat) -- I
V
(sat) -- I
BE C
BE
C
10
2SA1417
2SC3647
7
I
/ I =10
7
I
/ I =10
C
B
C
B
5
5
3
2
3
2
Ta= -
-25
°C
25°
C
Ta= -
-25
°C
25°
C
--1.0
1.0
7
5
7
5
75°C
75°C
3
3
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
7 --0.01
--0.1
--1.0
0.1
1.0
ITR03554
ITR03555
Collector Current, I -- A
Collector Current, I -- A
C
C
A S O
P
-- Ta
C
1.8
5
I
=3A
2SA1417 / 2SC3647
2SA1417 / 2SC3647
CP
3
2
1.6
1.5
I =2A
C
1.4
1.0
7
5
1.2
3
2
1.0
0.8
0.1
7
5
0.6
0.5
0.4
3
2
For PNP minus sign is omitted.
Ta=25°C
0.2
0
0.01
Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
7
5
5
7
2
3
5
7
2
3
5
7
2
0
20
40
60
80
100
120
140
160
1.0
10
100
Collector-to-Emitter Voltage, V
CE
-- V ITR03556
Ambient Temperature, Ta -- °C
IT10757
No.2006-4/7
2SA1417 / 2SC3647
Embossed Taping Specification
2SA1417S-TD-E, 2SA1417T-TD-E, 2SC3647S-TD-E, 2SC3647T-TD-E
No.2006-5/7
2SA1417 / 2SC3647
Outline Drawing
Land Pattern Example
2SA1417S-TD-E, 2SA1417T-TD-E, 2SC3647S-TD-E, 2SC3647T-TD-E
Mass (g) Unit
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
No.2006-6/7
2SA1417 / 2SC3647
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.2006-7/7
相关型号：
2SC3647G-R-AB3-R
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3
UTC
2SC3647G-S-AB3-R
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3
UTC
2SC3647G-T-AB3-R
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3
UTC
©2020 ICPDF网 联系我们和版权申明