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2SC3647-R [LGE]

NPN Transistors;
2SC3647-R
型号： 2SC3647-R
厂家： LGE    LGE
描述：

NPN Transistors

开关 晶体管
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中文：  中文翻译
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2SC3647  
NPN Transistors  
1.70 0.1  
■ Features  
● High breakdown voltage and large current capacity.  
● Complementary to 2SA1417  
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
■ Absolute Maximum Ratings Ta = 25℃  
Parameter  
Symbol  
Rating  
Unit  
V
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
VCBO  
VCEO  
VEBO  
120  
100  
6
Collector Current - Continuous  
Peak Collector Current  
I
C
2
3
A
mW  
℃
I
CM  
Collector Power Dissipation  
Junction Temperature  
P
C
500  
T
J
150  
Storage Temperature Range  
Tstg  
-55 to 150  
■ Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
120  
100  
6
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= 100 μA， I  
Ic= 1 mA，RBE= ∞  
= 100μA， I = 0  
CB= 100 V , I = 0  
EB= 4V , I =0  
E= 0  
I
E
C
I
CBO  
EBO  
V
V
E
0.1  
0.1  
0.4  
1.2  
400  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=1A, I  
B
B
=100mA  
=100mA  
0.13  
0.85  
V
C
=1A, I  
h
FE  
on  
stg  
V
CE= 5V, I  
C= 100mA  
100  
Turn-ON Time  
t
80  
1000  
50  
See sepcified Test Circuit.  
ns  
Storage Time  
t
Fall Time  
tf  
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= 10V,f=1MHz  
CE= 10V, I = 100mA  
16  
pF  
f
C
120  
MHz  
■ Classification of hfe  
Type  
Range  
Marking  
2SC3647-R  
100-200  
CCR  
2SC3647-S  
140-280  
CCS  
2SC3647-T  
200-400  
CCT  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  
2SC3647  
NPN Transistors  
Switching Time Test Circuit  
I
B1  
PW=20µs  
D.C.≤1%  
OUTPUT  
I
B2  
INPUT  
R
B
V
R
R
L
+
+
50Ω  
100µF  
= --5V  
470µF  
V
V
=50V  
CC  
BE  
10I = --10I =I =0.7A  
B1 B2  
C
For PNP, the polarity is reversed.  
■ Typical Characterisitics  
I
-- V  
BE  
I
-- V  
CE  
C
C
2.0  
1.6  
1.2  
0.8  
2.4  
2.0  
1.6  
1.2  
0.8  
2SC3647  
2SC3647  
V =5V  
CE  
2mA  
1mA  
0.4  
0
0.4  
0
I =0mA  
B
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
0
Base-to-Emitter Voltage, V  
-- V  
Collector-to-Emitter Voltage, V  
CE  
-- V  
BE  
I
-- V  
CE  
h
FE  
-- I  
C
C
1.0  
0.8  
0.6  
0.4  
1000  
2SC3647  
2SC3647  
7
5
V =5V  
CE  
3
2
100  
7
1.0mA  
0.2  
0
5
0.5mA  
I =0mA  
B
3
7
2
3
5
7
2
3
5
7
2
3
0
10  
20  
30  
40  
50  
0.01  
0.1  
1.0  
Collector-to-Emitter Voltage, V  
CE  
-- V  
Collector Current, I -- A  
C
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  
2SC3647  
NPN Transistors  
■ Typical Characterisitics  
f
-- I  
Cob -- V  
CB  
T
C
3
2
100  
2SC3647  
2SC3647  
f=1MHz  
7
V
=10V  
CE  
5
100  
3
2
7
5
10  
3
2
7
5
For PNP minus sign is omitted.  
For PNP minus sign is omitted.  
3
7
10  
7
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
100  
2
0.01  
0.1  
1.0  
1.0  
10  
Collector Current, I -- A  
Collector-to-Base Voltage, V  
-- V  
C
CB  
V
(sat) -- I  
A S O  
CE  
C
1000  
5
2SC3647  
/ I =10  
I
=3A  
2SC3647  
CP  
7
3
2
I
C
B
I =2A  
C
5
1.0  
7
5
3
2
3
2
100  
7
5
0.1  
7
5
3
2
3
2
For PNP minus sign is omitted.  
Ta=25°C  
--25°C  
0.01 Single pulse  
Mounted on a ceramic board (250mm2• 0.8mm)  
7
5
10  
7
2
3
5
7
2
3
5
7
1.0  
2
3
5
7
2
3
5
7
2
3
5
7
2
0.01  
0.1  
1.0  
10  
100  
Collector Current, I -- A  
Collector-to-Emitter Voltage, V  
CE  
-- V  
V
(sat) -- CI  
C
BE  
P
-- Ta  
C
10  
1.8  
2SC3647  
2SC3647  
7
I
/ I =10  
C
B
1.6  
1.5  
5
1.4  
3
2
1.2  
1.0  
0.8  
Ta=  
--25  
°C  
25  
°
C
1.0  
0.6  
0.5  
0.4  
7
5
75°C  
0.2  
0
3
7
2
3
5
7
2
3
5
7
1.0  
2
3
0.01  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
160  
Collector Current, I -- A  
C
Ambient Temperature, Ta -- °C  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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