2SC3646-T [KEXIN]
NPN Transistors;
| 型号： | 2SC3646-T |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：1129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SC3646
1.70 0.1
■ Features
● High breakdown voltage and large current capacity.
● Fast switching speed.
● Complementary to 2SA1416
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
VCBO
VCEO
VEBO
120
V
100
6
Collector Current - Continuous
Peak Collector Current
I
C
1
2
A
mW
℃
I
CM
Collector Power Dissipation
Junction Temperature
P
C
500
T
J
150
Storage Temperature Range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
120
100
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic= 1 mA，RBE= ∞
= 100μA， I = 0
CB= 100 V , I = 0
EB= 4V , I =0
E= 0
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.4
1.2
400
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=400 mA, I
B
B
=40mA
=40mA
0.1
V
C
=400 mA, I
0.85
h
FE
on
stg
V
CE= 5V, I
C= 100mA
100
Turn-ON Time
t
80
850
50
See sepcified Test Circuit.
ns
Storage Time
t
Fall Time
tf
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V,f=1MHz
CE= 10V, I = 100mA
8.5
120
pF
f
C
MHz
■ Classification of hfe
Type
Range
Marking
2SC3646-R
100-200
CBR
2SC3646-R
140-280
CBS
2SC3646-T
200-400
CBT
1
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SMD Type
Transistors
NPN Transistors
2SC3646
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
I
B2
INPUT
R
B
R
L
V
R
50Ω
+
+
100μF
470μF
--5V
50V
I =10I =--10I =400mA
C
B1
B2
(For PNP, the polarity is reversed)
■ Typical Characterisitics
I
-- V
CE
I
-- V
BE
C
C
1.0
0.8
0.6
0.4
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
2SC3646
2SC3646
V
CE
=5V
1
mA
I =0mA
B
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
0
Collector-to-Emitter Voltage, V
-- V
Base-to-Emitter Voltage, V
-- V
CE
BE
I
-- V
CE
h
FE
-- I
C
C
500
400
300
200
100
0
1000
2SC3646
2SC3646
7
5
V
CE
=5V
3
2
25°
C
100
--25
°C
7
5
0.5mA
3
2
I =0mA
B
10
0
10
20
30
40
50
7
2
3
5
7
2
3
5
7
2
3
0.01
0.1
1.0
Collector-to-Emitter Voltage, V
-- V
Collector Current, I -- A
CE
C
2
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SMD Type
Transistors
NPN Transistors
2SC3646
■ Typical Characterisitics
Cob -- V
A S O
CB
100
5
2SC3646
f=1MHz
3
2
7
I
=2A
CP
5
I =1A
C
1.0
7
5
3
2
3
2
0.1
10
7
5
7
5
3
2
For PNP, minus sign is omitted
2SC3646
Single pulse Ta=25°C
Mounted on a ceramic board (250mm2 0.8mm)
3
2
0.01
For PNP, minus sign is omitted
7
5
7
2
3
5
7
2
3
5
7
100
2
5
7
2
3
5
7
2
3
5
7
100
2
1.0
10
1.0
10
Collector-to-Base Voltage, V
-- V
Collector-to-Emitter Voltage, V
-- V
CB
CE
V
(sat) -- I
CE
C
P
-- Ta
C
1000
1.6
2SC3646
2SC3646
7
5
I
/ I =10
C
B
1.4
1.3
1.2
3
2
1.0
0.8
100
0.6
0.5
0.4
7
5
--25°C
0.2
0
3
2
25°
C
7
3
5
7
2
3
5
7
2
0.01
0.1
1.0
0
20
40
60
80
100
120
140
160
Collector Current, I -- A
C
Ambient Temperature, Ta -- °C
V
(sat) -- I
BE
C
f
-- I
C
T
10
3
2
2SC3646
2SC3646
=10V
7
5
I
/ I =10
C
B
V
CE
3
2
100
7
5
2SC3646
1.0
3
2
7
5
25°
C
75°C
For PNP, minus sign is omitted
3
10
7
2
3
5
7
2
3
5
7
2
0.01
0.1
1.0
7
2
3
5
7
2
3
5
7
0.01
0.1
1.0
Collector Current, I -- A
C
Collector Current, I -- A
C
3
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