2SC3646R [ETC]
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89 ; 晶体管| BJT | NPN | 100V V（ BR ） CEO | 1A I（C ） | SOT- 89\n
| 型号： | 2SC3646R |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-89
|
| 文件： | 总4页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:EN2005A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1416/2SC3646
High-Voltage Switching Applications
Features
Package Dimensions
unit:mm
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching time.
· Very small size making it easy to provide high-
density, small-sized hybrid ICs.
2038
[2SA1416/2SC3646]
E : Emitter
C : Collector
B : Base
( ) : 2SA1416
SANYO : PCP
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
(–)120
(–)100
(–)6
V
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
V
V
CEO
V
EBO
I
(–)1
A
C
Collector Current (Pulse)
Collector Dissipation
I
(–)2
A
CP
P
500
mW
W
˚C
˚C
C
Moutned on ceramic board (250mm2×0.8mm)
1.3
Junction Temperature
Storage Temperature
Tj
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
I
V
V
V
V
V
=(–)100V, I =0
E
=(–)4V, I =0
C
=(–)5V, I =(–)100mA
C
(–)100
(–)100
400*
nA
nA
CBO
CB
EB
CE
CE
CB
Emitter Cutoff Current
DC Current Gain
I
EBO
h
100*
FE
Gain-Bandwidth Product
Output Capacitance
f
=(–)10V, I =(–)100mA
120
MHz
pF
pF
V
T
C
C
=(–)10V, f=1MHz
(13)
8.5
ob
Collector-to-Emitter Saturation Voltage
V
V
I
=(–)400mA, I =(–)40mA
C B
(–0.2)
0.1
(–0.6)
0.4
CE(sat)
V
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Turn-ON Time
I
I
I
=(–)400mA, I =(–)40mA
B
=(–)10µA, I =0
E
(–)0.85
(–)1.2
V
BE(sat)
C
C
C
V
V
V
(–)120
(–)100
(–)6
V
(BR)CBO
(BR)CEO
(BR)EBO
=(–)1mA, R =∞
V
BE
I =(–)10µA, I =0
V
E
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(80)
80
ns
ns
ns
ns
ns
ns
on
Storage Time
Fall Time
t
(700)
850
(40)
50
stg
t
f
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3277KI/N255MW, TS No.2005-1/4
2SA1416/2SC3646
* : The 2SA1416/2SC3646 are classified by 100mA h as follows :
FE
280 200
h rank : R, S, T
FE
100
R
200 140
S
T
400
Marking
2SA1416 : AB
2SC3646 : CB
Switching Time Test Circuit
(For PNP, the polarity is reversed)
Unit (resistance : Ω, capacitance : F)
No.2005-2/4
2SA1416/2SC3646
No.2005-3/4
2SA1416/2SC3646
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1998. Specifications and information herein are subject to
change without notice.
PS No.2005-4/4
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