2N7002T [ONSEMI]
N 沟道增强型场效应晶体管 60V，115mA，2Ω;
| 型号： | 2N7002T |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道增强型场效应晶体管 60V，115mA，2Ω 晶体管 场效应晶体管 |
| 文件： | 总6页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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SIMPLIFIED SCHEMATIC
N-Channel Enhancement
Mode Field Effect
Transistor
Drain
2N7002T
Gate
Features
• Low On−Resistance
Source
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
D
• Low Input/Output Leakage
• Ultra−Small Surface Mount Package
• This Device is Pb−Free and are RoHS Compliant
S
G
SOT−523FL
CASE 419BG
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Parameter
Symbol
Value
60
Unit
V
Drain−to−Source Voltage
V
DSS
DGR
MARKING DIAGRAM
Drain−Gate Voltage R ≤ 1.0 MW
V
60
V
GS
3
Gate−Source Voltage
Continuous
Pulsed
V
GSS
V
20
40
&Z&3
Gate−Source Voltage
Continuous
I
mA
D
115
73
Continuous at 100°C
Pulsed
800
1
2
Junction Temperature Range
Storage Temperature Range
T
150
°C
°C
J
&Z = Assembly location
&3 = Data code
T
−55 to
+150
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
2N7002T
SOT−523FL
(Pb−Free)
3000 / Tape & Reel
Parameter
Symbol
Max
Unit
Total Device Dissipation
P
D
200
1.6
mW
mW/°C
Derating above T = 25°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
A
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
625
°C/W
q
JA
1. Device mounted on FR−4 PCB, 1 inch × 0.85 inch × 0.062 inch. Minimum land
pad size.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
June, 2023 − Rev. 1
2N7002T/D
2N7002T
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS (Note 2)
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
I
V
V
V
= 0 V, I = 10 mA
60
−
78
0.001
7
−
V
DSS
GS
GS
GS
D
= 60 V, V = 0 V
1.0
500
mA
mA
DSS
GS
= 60 V, V = 0 V
−
GS
T = 125°C
J
Gate−Body Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
=
20 V, V = 0 V
−
0.2
10
nA
GSS
GS
DS
V
V
DS
V
GS
V
GS
V
GS
= V , I = 250 mA
1.0
−
1.76
1.6
−
2.0
7.5
V
W
W
W
GS(th)
GS
D
Static Drain−Source On−Resistance
R
= 5 V, I = 0.05 A
D
DS(ON)
= 10 V, I = 0.5 A
−
2.0
D
= 10 V, I = 0.5 A,
−
2.53
13.5
D
T = 125°C
J
On−State Drain Current
I
V
GS
V
DS
= 10 V, V = 7.5 V
0.5
80
1.43
−
−
A
D(ON)
DS
Forward Transconductance
g
FS
= 10 V, I = 0.2 A
356.5
mS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
= 25 V, V = 0 V,
−
−
−
37.8
12.4
6.5
50
25
pF
ISS
DS
GS
f = 1.0 MHz
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
C
7.0
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
V
= 30 V, I = 0.2 A,
−
−
5.85
12.5
20
20
ns
D(ON)
DD
D
= 10 V, R = 150 W,
GEN
L
Turn−Off Delay Time
t
D(OFF)
R
= 25 W
GEN
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Short duration test pulse used to minimize self−heating effect.
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2
2N7002T
TYPICAL PERFORMANCE CHARACTERISTICS
3.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.5 V
4 V
V
= 3 V
GS
5 V
6 V
V
= 10 V
GS
2.5
2.0
1.5
1.0
5 V
4 V
10 V
3 V
8
9 V
8 V
7 V
2 V
9
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
7
10
V
DS
, DRAIN−SOURCE VOLTAGE (V)
I , DRAIN−SOURCE CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with Gate
Voltage and Drain Current
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
V
= 10 V
= 500 mA
GS
I
D
I
= 500 mA
D
I
= 50 mA
D
−50
0
50
100
150
2
4
, GATE−SOURCE VOLTAGE (V)
GS
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−Source Voltage
Temperature
1.0
2.5
2.0
1.5
1.0
V
GS
= 0 V
T = −25°C
J
V
GS
= V
DS
150°C
125°C
75°C
0.8
0.6
0.4
0.2
0.0
25°C
I
D
= 1 mA
I
D
= 0.25 mA
2
3
4
5
6
150
−50
0
50
100
V
GS
, GATE−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
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3
2N7002T
TYPICAL PERFORMANCE CHARACTERISTICS (CONTINUED)
250
200
150
V
GS
= 0 V
100
150°C
25°C
55°C
100
10
1
50
0
0
25
50
75
100 125
150 175
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Reverse Drain Current Variation with
Diode Forward Voltage and Temperature
Figure 8. Power Derating
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−523FL
CASE 419BG
ISSUE A
DATE 29 SEP 2017
0.50
1.70
A
1.50
0.35
0.25
0.50
B
3
0.98
0.78
1.60
1.14
1.80
1
2
0.1 C B A
(0.15)
0.50
0.66
0.50
1.00
LAND PATTERN RECOMMENDATION
TOP VIEW
0.78
0.58
0.20
0.04
SEE DETAIL A
C
0.43
0.28
0.54
0.34
DETAIL A
0.10
0.00
SCALE 2 : 1
BOTTOM VIEW
NOTES:
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DRAWING CONFORMS TO ASME Y14.5M-1994
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13789G
SOT−523FL
PAGE 1 OF 1
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