2N7002T,215 [NXP]
2N7002T - N-channel TrenchMOS logic level FET TO-236 3-Pin;
| 型号： | 2N7002T,215 |
| 厂家： | 
NXP |
| 描述： | 2N7002T - N-channel TrenchMOS logic level FET TO-236 3-Pin |
| 文件： | 总12页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002T
N-channel TrenchMOS FET
Rev. 01 — 17 November 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
■ Logic level threshold compatible
■ Surface-mounted package
■ Very fast switching
■ TrenchMOS technology
1.3 Applications
■ Logic level translator
■ High-speed line driver
1.4 Quick reference data
■ VDS ≤ 60 V
■ RDSon ≤ 5 Ω
■ ID ≤ 300 mA
■ Ptot ≤ 0.83 W
2. Pinning information
Table 1:
Pinning
Pin
1
Description
gate (G)
Simplified outline
Symbol
D
S
3
2
source (S)
drain (D)
3
G
1
2
mbb076
SOT23
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
2N7002T
TO-236AB plastic surface mounted package; 3 leads
SOT23
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
60
Unit
V
VDS
VDGR
VGS
VGSM
ID
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
drain-gate voltage (DC)
gate-source voltage
peak gate-source voltage
drain current
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
60
V
-
±30
±40
300
190
1.2
V
tp ≤ 50 µs; pulsed; duty cycle = 25 %
Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3
Tsp = 100 °C; VGS = 10 V; see Figure 2
Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
Tsp = 25 °C; see Figure 1
-
V
-
mA
mA
A
-
IDM
Ptot
Tstg
Tj
peak drain current
-
total power dissipation
storage temperature
junction temperature
-
0.83
+150
+150
W
−65
−65
°C
°C
Source-drain diode
IS
source current
peak source current
Tsp = 25 °C
-
-
300
1.2
mA
A
ISM
Tsp = 25 °C; pulsed; tp ≤ 10 µs
2N7002T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 November 2005
2 of 12
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
03aa17
03aa25
120
120
Ider
(%)
Pder
(%)
80
40
0
80
40
0
0
50
100
150
200
0
50
100
150
200
Tsp ( C)
Tsp ( C)
°
°
Ptot
ID
Pder
=
× 100 %
Ider
=
× 100 %
------------------------
--------------------
P
I
°
°
tot(25 C)
D(25 C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature
Fig 2. Normalized continuous drain current as a
function of solder point temperature
03aa03
10
Tsp = 25 °C
ID
(A)
Limit RDSon = VDS / ID
tp = 10 µs
1
100 µs
1 ms
10-1
10 ms
DC
100 ms
10-2
1
10
102
VDS (V)
Tsp = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
2N7002T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 November 2005
3 of 12
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
Rth(j-sp) thermal resistance from junction to solder point
see Figure 4
-
-
-
-
150
350
K/W
K/W
[1]
Rth(j-a)
thermal resistance from junction to ambient
[1] Mounted on a printed-circuit board; minimum footprint; vertical in still air
03aa01
103
Zth(j-sp)
(K/W)
102
δ = 0.5
0.2
0.1
10
0.02
0.05
tp
T
P
δ =
single pulse
1
t
tp
T
10-1
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
2N7002T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 November 2005
4 of 12
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
60
55
-
-
-
-
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
1
2
-
2.5
-
V
V
V
Tj = 150 °C
0.6
-
Tj = −55 °C
-
2.75
IDSS
drain leakage current
gate leakage current
VDS = 48 V; VGS = 0 V
Tj = 25 °C
-
-
-
0.01
-
1
µA
µA
nA
Tj = 150 °C
10
100
IGSS
VGS = ±15 V; VDS = 0 V
VGS = 10 V; ID = 500 mA; see Figure 6 and 8
Tj = 25 °C
10
RDSon
drain-source on-state
resistance
-
-
-
2.8
-
5
Ω
Ω
Ω
Tj = 150 °C
9.25
5.3
VGS = 4.5 V; ID = 75 mA; see Figure 6 and 8
3.8
Dynamic characteristics
gfs
transfer conductance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
VGS = 10 V; ID = 200 mA; see Figure 11
100
300
25
18
7.5
3
-
mS
pF
pF
pF
ns
Ciss
Coss
Crss
ton
VGS = 0 V; VDS = 10 V; f = 1 MHz; see
Figure 12
-
-
-
-
-
40
30
10
10
12
VDS = 50 V; RL = 250 Ω; VGS = 10 V;
RG = 50 Ω; RGS = 50 Ω
toff
turn-off time
12
ns
Source-drain diode
VSD
trr
source-drain voltage
IS = 300 mA; VGS = 0 V; see Figure 13
-
-
-
0.85 1.5
V
reverse recovery time
recovered charge
IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V
30
30
-
-
ns
nC
Qr
2N7002T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 November 2005
5 of 12
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
03aa04
03aa05
0.8
10
RDSon
(Ω)
3
3.5
VGS (V) =10
Tj = 25 °C
Tj = 25 °C
ID
(A)
8
6
4
2
0
0.6
4.5
4
4
0.4
0.2
0
4.5
3.5
10
VGS (V) =
3
0
0.4
0.8
1.2
1.6
2
0
0.2
0.4
0.6
0.8
V
DS (V)
ID (A)
Tj = 25 °C
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
03aa06
03aa28
0.8
2.4
ID
a
(A)
0.6
0.4
0.2
1.8
1.2
0.6
0
150 °C
Tj = 25 °C
0
0
2
4
6
-60
0
60
120
180
VGS (V)
Tj (°C)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
RDSon
a =
------------------------------
RDSon(25
°
C)
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
2N7002T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 November 2005
6 of 12
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
003aab101
003aab100
3
10-3
ID
VGS(th)
(V)
max
typ
(A)
2
1
0
10-4
10-5
10-6
min
typ
max
min
-60
0
60
120
180
0
1
2
3
Tj (°C)
V
GS (V)
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03aa07
03aa09
0.4
102
gfs
Tj = 25 °C
150 °C
(S)
C
0.3
0.2
0.1
0
(pF)
Ciss
Coss
10
Crss
1
10-1
0
0.2
0.4
0.6
0.8
1
10
102
ID (A)
VDS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Transfer conductance as a function of drain
current; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
2N7002T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 November 2005
7 of 12
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
03aa08
1
VGS = 0 V
IS
(A)
0.8
0.6
0.4
0.2
0
Tj = 25 °C
150 °C
0
0.4
0.8
1.2
V
SD (V)
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 13. Source current as a function of source-drain voltage; typical values
2N7002T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 November 2005
8 of 12
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
7. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-09-13
04-11-04
SOT23
TO-236AB
Fig 14. Package outline SOT23
2N7002T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 November 2005
9 of 12
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
8. Revision history
Table 6:
Revision history
Document ID
Release date Data sheet status
20051117 Product data sheet
Change notice Doc. number
Supersedes
2N7002T_1
-
-
-
2N7002T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 November 2005
10 of 12
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
9. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
2N7002T_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 17 November 2005
11 of 12
2N7002T
Philips Semiconductors
N-channel TrenchMOS FET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 17 November 2005
Document number: 2N7002T_1
Published in The Netherlands
相关型号：
2N7002T-13-F
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
2N7002T1
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CALOGIC
2N7002T2
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CALOGIC
2N7002T7-7
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
DIODES
©2020 ICPDF网 联系我们和版权申明