2N7002T-7-F [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | 2N7002T-7-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总6页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2007
2N7002T
N-Channel Enhancement Mode Field Effect Transistor
Features
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant
D
S
G
SOT - 523F
Marking : AA
Absolute Maximum Ratings *
T
= 25°C unless otherwise noted
a
Symbol
Parameter
Value
60
Units
VDSS
Drain-Source Voltage
V
V
VDGR
VGSS
Drain-Gate Voltage RGS ≤ 1.0MΩ
60
Gate-Source Voltage
Continuous
Pulsed
±20
±40
V
ID
Drain Current
Continuous
Continuous @ 100°C
Pulsed
115
73
800
mA
TJ
Junction Temperature
150
°C
°C
TSTG
Storage Temperature Range
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Total Device Dissipation
Derating above TA = 25°C
200
1.6
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient *
625
°C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
www.fairchildsemi.com
1
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
MIN
TYP
MAX
Units
Off Characteristics (Note1)
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS= 0V, ID=10uA
60
-
78
-
V
Zero Gate Voltage Drain Current
VDS= 60V, VGS= 0V
0.001
7
1.0
500
uA
nA
VDS= 60V, VGS= 0V, @TC = 125°C
IGSS
Gate-Body Leakage
VGS= ±20V, VDS= 0V
-
0.2
±10
On Characteristics (Note1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
1.0
1.76
2.0
V
RDS(ON)
Satic Drain-Source On-Resistance VGS = 5V, ID = 0.05A,
-
-
1.6
2.53
7.5
13.5
Ω
VGS = 10V, ID = 0.5A, @Tj = 125°C
ID(ON)
gFS
On-State Drain Current
VGS = 10V, VDS= 7.5V
0.5
80
1.43
-
-
A
Forward Transconductance
VDS = 10V, ID = 0.2A
356.5
mS
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
-
-
-
37.8
12.4
6.5
50
25
pF
pF
pF
Output Capacitance
VDS = 25V, VGS= 0V, f = 1.0MHz
Reverse Transfer Capacitance
7.0
Switching Characteristics
tD(ON)
Turn-On Delay Time
Turn-Off Delay Time
VDD = 30V, ID = 0.2A, VGEN= 10V
RL = 150Ω, RGEN = 25Ω
-
-
5.85
12.5
20
20
ns
tD(OFF)
Note1 : Short duration test pulse used to minimize self-heating effect.
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3.0
1.6
VGS = 3V
4V
4.5V
VGS = 10V
1.4
5V
6V
2.5
2.0
1.5
1.0
1.2
5V
1.0
4V
0.8
0.6
10V
9V
0.4
3V
8V
7V
0.2
2V
0.0
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
7
8
9
10
150
6
ID. DRAIN-SOURCE CURRENT(A)
VDS. DRAIN-SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-Source Voltage
3.0
3.0
VGS = 10V
ID = 500 mA
2.5
2.0
1.5
1.0
0.5
2.5
ID = 500 mA
2.0
ID = 50 mA
1.5
1.0
-50
0
50
100
2
4
6
8
10
TJ. JUNCTION TEMPERATURE(oC)
VGS. GATE-SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
2.5
1.0
TJ = -25oC
VDS = 10V
VGS = VDS
150oC
0.8
25oC
2.0
1.5
1.0
125oC
0.6
ID = 1 mA
75oC
ID = 0.25 mA
0.4
0.2
0.0
-50
0
50
100
150
2
3
4
5
TJ. JUNCTION TEMPERATURE(oC)
VGS. GATE-SOURCE VOLTAGE (V)
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 7. Reverse Drain Current Variation with
Diode Forward Voltage and Temperature
Figure 8. Power Derating
250
200
150
100
50
VGS = 0 V
150oC
100
25oC
10
-55oC
1
0.0
0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
175
Ta[oC], AMBIENT TEMPERATURE
VSD, Body Diode Forward Voltage [V]
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
www.fairchildsemi.com
4
Package Dimensions
SOT-523F
Dimensions in Millimeters
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
www.fairchildsemi.com
5
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
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PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I30
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
www.fairchildsemi.com
6
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