2N7002TC [DIODES]

115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET;
2N7002TC
型号: 2N7002TC
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

晶体 晶体管 开关 光电二极管
文件: 总5页 (文件大小:85K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2N7002  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Mechanical Data  
Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Case: SOT-23  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Weight: 0.008 grams (approximate)  
Qualified to AEC-Q101 Standards for High Reliability  
Drain  
SOT-23  
D
Gate  
S
G
Source  
Top View  
Equivalent Circuit  
Top View  
Ordering Information (Note 3)  
Part Number  
Case  
Packaging  
2N7002-7-F  
SOT-23  
3000/Tape & Reel  
Notes:  
1. No purposefully added lead. Halogen and Antimony Free.  
2. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
3. For packaging details, go to our website at http://www.diodes.com.  
Marking Information  
K7x = Product Type Marking Code, e.g. K72  
YM = Date Code Marking  
Y = Year (ex: N = 2002)  
K7x  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004 2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 5  
www.diodes.com  
November 2010  
© Diodes Incorporated  
2N7002  
Document number: DS11303 Rev. 24 - 2  
2N7002  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
60  
Units  
V
V
60  
Drain-Gate Voltage RGS 1.0MΩ  
VDGR  
Gate-Source Voltage  
Continuous  
Pulsed  
Continuous  
±20  
±40  
115  
73  
V
VGSS  
Drain Current (Note 4)  
Continuous @ 100°C  
Pulsed  
mA  
ID  
800  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 4)  
Derating above TA = 25°C  
Symbol  
PD  
Rθ  
Value  
300  
2.4  
Units  
mW  
mW/°C  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
417  
°C/W  
°C  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
60  
70  
V
BVDSS  
IDSS  
1.0  
500  
VGS = 0V, ID = 10μA  
VDS = 60V, VGS = 0V  
VGS = ±20V, VDS = 0V  
@ TC = 25°C  
@ TC = 125°C  
µA  
nA  
Gate-Body Leakage  
±10  
IGSS  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
1.0  
2.5  
V
VGS(th)  
VDS = VGS, ID = 250μA  
V
GS = 5.0V, ID = 0.05A  
Static Drain-Source On-Resistance  
@ TJ = 25°C  
@ TJ = 125°C  
3.2  
4.4  
7.5  
13.5  
RDS (ON)  
Ω
VGS = 10V, ID = 0.5A  
VGS = 10V, VDS = 7.5V  
VDS =10V, ID = 0.2A  
VGS = 0V, IS = 115mA  
On-State Drain Current  
0.5  
80  
1.0  
0.78  
A
mS  
V
ID(ON)  
gFS  
VSD  
IS  
1.5  
200  
2
Forward Transconductance  
Diode Forward Voltage (Note 6)  
Continuous Source Current (Note 6)  
Pulse Source Current (Note 6)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
mA  
A
ISD  
22  
11  
50  
25  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
V
DS = 25V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
2.0  
5.0  
7.0  
11  
20  
20  
ns  
ns  
tD(ON)  
VDD = 30V, ID = 0.2A,  
RL = 150Ω, VGEN = 10V,  
RGEN = 25Ω  
Turn-Off Delay Time  
tD(OFF)  
Notes:  
4. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
5. Short duration pulse test used to minimize self-heating effect.  
6. VSD measured in 250μs pulse, duty cycle = 2%; ISD measure in 10ms Repetitive Pulse, duty cycle = 2% , Pd_Pulse is from Zth test data  
2 of 5  
www.diodes.com  
November 2010  
© Diodes Incorporated  
2N7002  
Document number: DS11303 Rev. 24 - 2  
2N7002  
7
6
5
1.0  
0.8  
0.6  
0.4  
0.2  
0
4
3
2
1
0
4
5
0
1
2
0
0.2  
0.4  
0.6  
0.8  
1.0  
3
VDS, DRAIN-SOURCE VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Fig. 1 On-Region Characteristics  
Fig. 2 On-Resistance vs. Drain Current  
6
5
3.0  
2.5  
4
3
2
ID = 500mA  
ID = 50mA  
2.0  
1.5  
1.0  
1
0
VGS = 10V,  
ID = 200mA  
-55 -30  
Tj, JUNCTION TEMPERATURE (  
Fig. 3 On-Resistance vs. Junction Temperature  
-5  
20  
45  
70 95  
120 145  
0
2
4
6
8
10 12 14 16 18  
°
C)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Fig. 4 On-Resistance vs. Gate-Source Voltage  
10  
400  
9
8
7
6
5
4
350  
300  
250  
200  
150  
100  
3
2
50  
0
1
0
1
50  
TA, AMBIENT TEMPERATURE (  
Fig. 6 Max Power Dissipation vs. Ambient Temperature  
75  
125 150 175  
0
0.2  
0.6  
ID, DRAIN CURRENT (A)  
Fig. 5 Typical Transfer Characteristics  
0.8  
0
25  
100  
200  
0.4  
°C)  
3 of 5  
www.diodes.com  
November 2010  
© Diodes Incorporated  
2N7002  
Document number: DS11303 Rev. 24 - 2  
2N7002  
Package Outline Dimensions  
A
SOT23  
Dim  
A
B
C
D
F
G
H
J
K
Min  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013 0.10  
0.903 1.10  
-
C
B
2.05  
3.00  
1.83  
2.90  
0.05  
1.00  
0.400  
0.55  
0.11  
-
H
M
K
K1  
D
K1  
L
M
-
F
J
L
0.45  
0.085 0.18  
0° 8°  
0.61  
G
α
All Dimensions in mm  
Suggested Pad Layout  
Y
Dimensions Value (in mm)  
Z
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
1.35  
C
E
X
4 of 5  
www.diodes.com  
November 2010  
© Diodes Incorporated  
2N7002  
Document number: DS11303 Rev. 24 - 2  
2N7002  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2010, Diodes Incorporated  
www.diodes.com  
5 of 5  
www.diodes.com  
November 2010  
© Diodes Incorporated  
2N7002  
Document number: DS11303 Rev. 24 - 2  

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