2N7002TC [DIODES]
115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET;型号: | 2N7002TC |
厂家: | DIODES INCORPORATED |
描述: | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 晶体 晶体管 开关 光电二极管 |
文件: | 总5页 (文件大小:85K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
•
•
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
•
•
•
•
Qualified to AEC-Q101 Standards for High Reliability
Drain
SOT-23
D
Gate
S
G
Source
Top View
Equivalent Circuit
Top View
Ordering Information (Note 3)
Part Number
Case
Packaging
2N7002-7-F
SOT-23
3000/Tape & Reel
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
K7x = Product Type Marking Code, e.g. K72
YM = Date Code Marking
Y = Year (ex: N = 2002)
K7x
M = Month (ex: 9 = September)
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004 2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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November 2010
© Diodes Incorporated
2N7002
Document number: DS11303 Rev. 24 - 2
2N7002
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Units
V
V
60
Drain-Gate Voltage RGS ≤ 1.0MΩ
VDGR
Gate-Source Voltage
Continuous
Pulsed
Continuous
±20
±40
115
73
V
VGSS
Drain Current (Note 4)
Continuous @ 100°C
Pulsed
mA
ID
800
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Derating above TA = 25°C
Symbol
PD
Rθ
Value
300
2.4
Units
mW
mW/°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
417
°C/W
°C
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
60
⎯
⎯
70
⎯
⎯
V
BVDSS
IDSS
⎯
1.0
500
VGS = 0V, ID = 10μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
@ TC = 25°C
@ TC = 125°C
µA
nA
Gate-Body Leakage
±10
IGSS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
1.0
2.5
V
VGS(th)
⎯
VDS = VGS, ID = 250μA
V
GS = 5.0V, ID = 0.05A
Static Drain-Source On-Resistance
@ TJ = 25°C
@ TJ = 125°C
3.2
4.4
7.5
13.5
RDS (ON)
⎯
Ω
VGS = 10V, ID = 0.5A
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
⎯
On-State Drain Current
0.5
80
⎯
⎯
⎯
1.0
⎯
0.78
A
mS
V
ID(ON)
gFS
VSD
IS
⎯
⎯
1.5
200
2
Forward Transconductance
Diode Forward Voltage (Note 6)
Continuous Source Current (Note 6)
Pulse Source Current (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
mA
A
⎯
⎯
ISD
⎯
22
11
50
25
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
V
DS = 25V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
2.0
5.0
7.0
11
20
20
ns
ns
tD(ON)
⎯
⎯
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
Turn-Off Delay Time
tD(OFF)
Notes:
4. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
5. Short duration pulse test used to minimize self-heating effect.
6. VSD measured in 250μs pulse, duty cycle = 2%; ISD measure in 10ms Repetitive Pulse, duty cycle = 2% , Pd_Pulse is from Zth test data
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© Diodes Incorporated
2N7002
Document number: DS11303 Rev. 24 - 2
2N7002
7
6
5
1.0
0.8
0.6
0.4
0.2
0
4
3
2
1
0
4
5
0
1
2
0
0.2
0.4
0.6
0.8
1.0
3
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Fig. 1 On-Region Characteristics
Fig. 2 On-Resistance vs. Drain Current
6
5
3.0
2.5
4
3
2
ID = 500mA
ID = 50mA
2.0
1.5
1.0
1
0
VGS = 10V,
ID = 200mA
-55 -30
Tj, JUNCTION TEMPERATURE (
Fig. 3 On-Resistance vs. Junction Temperature
-5
20
45
70 95
120 145
0
2
4
6
8
10 12 14 16 18
°
C)
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
10
400
9
8
7
6
5
4
350
300
250
200
150
100
3
2
50
0
1
0
1
50
TA, AMBIENT TEMPERATURE (
Fig. 6 Max Power Dissipation vs. Ambient Temperature
75
125 150 175
0
0.2
0.6
ID, DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
0.8
0
25
100
200
0.4
°C)
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© Diodes Incorporated
2N7002
Document number: DS11303 Rev. 24 - 2
2N7002
Package Outline Dimensions
A
SOT23
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
M
K
K1
D
K1
L
M
-
F
J
L
0.45
0.085 0.18
0° 8°
0.61
G
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
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November 2010
© Diodes Incorporated
2N7002
Document number: DS11303 Rev. 24 - 2
2N7002
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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November 2010
© Diodes Incorporated
2N7002
Document number: DS11303 Rev. 24 - 2
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