2N7002TPTGP [CHENMKO]
Transistor,;
| 型号： | 2N7002TPTGP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, |
| 文件： | 总5页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
2N7002TPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts CURRENT 0.250 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SC-75/SOT-416
FEATURE
* Small surface mounting type. (SC-75/SOT-416)
* High density cell design for low RDS(ON).
* Suitable for high packing density.
* Rugged and reliable.
0.1
0.2±
0.2±
0.05
0.5
0.5
* High saturation current capability.
* Voltage controlled small signal switch.
1.6±0.2
1.0±0.1
0.3±
0.1
0.05
0.1
0.05
0.8±0.1
CONSTRUCTION
* N-Channel Enhancement
0.6~0.9
0~0.1
0.15±0.05
0.1Min.
D
(3)
1.6±0.2
CIRCUIT
(1)
G
SC-75/SOT-416
(2)
Dimensions in millimeters
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
2N7002TPT
Symbol
Parameter
Units
VDSS
Drain-Source Voltage
60
60
V
V
VDGR
VGSS
Drain-Gate Voltage (RGS < 1 M
)
Ω
Gate-Source Voltage - Continuous
±20
V
- Non Repetitive (tp < 50µs)
40
±
TA= 25°C
250
190
ID
Maximum Drain Current - Continuous
- Pulsed
mA
TA= 70°C
TA= 25°C
TA= 70°C
PD
Maximum Power Dissipation
350
mW
mW
°C
220
TJ,TSTG
TL
Operating and Storage Temperature Range
-55 to 150
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
556
°C
Thermal characteristics
R
Thermal Resistance, Junction-to-Ambient
°C/W
θJA
2004-6
RATING CHARACTERISTIC CURVES ( 2N7002TPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA
Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V
60
70
V
1
µA
mA
nA
nA
TC=125°C
0.5
10
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 15 V, VDS = 0 V
VGS = -15 V, VDS = 0 V
-10
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
2.0
1.7
2.5
3.0
V
RDS(ON)
Static Drain-Source On-Resistance VGS = 10 V, ID = 250 mA
VGS = 4.0 V, ID = 100 mA
Ω
2.5
4.0
VDS(ON)
Drain-Source On-Voltage
V
VGS = 10 V, ID = 500mA
VGS = 5.0 V, ID = 50 mA
VGS = 10 V, VDS = 7.5VDS(on)
0.6
3.75
1.5
0.09
1800
700
250
ID(ON)
On-State Drain Current
800
500
mA
mS
VGS = 4.5V, VDS
= 10VDS(on)
gFS
Forward Transconductance
VDS = 15 VDS(on), ID = 200 mA
DYNAMIC CHARACTERISTICS
nC
pF
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
0.6
1.0
25
5
VDS = 30 V, VGS = 10 V,
ID= 250 mA
Qgs
Qgd
0.06
0.06
Ciss
Coss
Crss
ton
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
25
6
50
25
5
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
1.2
VDD = 30 V, RL = 200
ID = 100 mA, VGS = 10 V,
RGEN = 10
Ω,
7.5
20
nS
nS
tr
6
Ω
toff
tf
Turn-Off Time
VDD = 30 V, RL = 200
ID = 100 mA, VGS = 10 V,
RGEN = 10
Ω,
7.5
3
20
Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
115
0.8
mA
A
ISM
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 200 mA (Note 1)
0.85
1.2
V
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
RATING CHARACTERISTIC CURVES ( 2N7002TPT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2.5
2
6
5
4
3
2
1
VGS = 10V
VGS =4.0V
4.5
9.0
8.0
5.0
7.0
6.0
6.0
1.5
1
7.0
8.0
5.0
9.0
10
0.5
0
4.0
3.0
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2
VDS , DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
D
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
6.0
5.0
4.0
3.0
2.0
1.0
0
6
5
4
3
2
1
0
VGS = 10V
V GS
ID
=
10V
=
250mA
TJ
= 125°C
25°C
-55°C
-50
-25
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2
T
J
, JUNCTION TEMPERATURE (°C)
I
, DRAIN CURRENT (A)
D
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
2
1.6
1.2
0.8
0.4
0
1.1
1.05
1
T J = -55°C
VDS
= 10V
25°C
V DS = VGS
I D = 1 mA
125°C
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
T
J
, JUNCTION TEM PERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
GS
RATING CHARACTERISTIC CURVES ( 2N7002TPT )
Typical Electrical Characteristics (continued)
Figure 8. Body Diode Forward Voltage
Variation with Drain Current
Figure 7. Breakdown Voltage Variation
with Temperature
1.1
1.075
1.05
1.025
1
2
1
ID
= 250µA
VGS
= 0V
0.5
T
= 125°C
J
0.1
25°C
0.05
-55°C
0.975
0.95
0.925
0.01
0.005
0.001
-50
-25
0
25
50
75
100
125
150
0.2
0.4
V
0.6
0.8
1
1.2
1.4
T
J
, JUNCTION TEMPERATURE (°C)
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
60
40
1.0
.8
.6
.4
.2
0
VDS
= 30V
C iss
20
10
5
C oss
f
= 1 MHz
2
1
VGS
=
0V
C rss
ID =250mA
0.1
1
2
3
,
5
10
20
30
50
0
0.2
0.3
0.4
0.5
V
DRAIN TO SOURCE VOLTAGE (V)
Q
,
g
GATE CHARGE (nC)
DS
Figure 11.
Figure 12. Switching Waveforms
ton toff
VDD
td(off)
r
t
tf
td(on)
90%
90%
RL
VIN
D
VOUT
Output, V
Input, V
out
10%
90%
10%
VGS
Inverted
RGEN
DUT
G
50%
in
50%
10%
S
Pulse Width
RATING CHARACTERISTIC CURVES ( 2N7002TPT )
Typical Electrical Characteristics (continued)
Figure 13. 2N7002 Maximum Safe Operating Area
3
2
1
0.5
0.1
0.05
VGS
= 10V
SINGLE PULSE
0.01
TA
2
= 25°C
0.005
1
5
10
20
30
60
80
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 14. 2N7002 Transient Thermal Response Curve
1
D
= 0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
R
(t) = r(t) * R
θJA
θJA
= (See Datasheet)
R
θJA
0.05
P(pk)
t1
0.01
t2
Single Pulse
T
- T = P
*
R
(t)
J
A
θJA
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
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