2N7002TQ-13-F [DIODES]
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3;
| 型号： | 2N7002TQ-13-F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002T
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ID
V(BR)DSS
RDS(ON)
TA = 25°C
Low Input/Output Leakage
60V
115mA
7.5Ω @ VGS = 5V
Ultra-Small Surface Mount Package
Totally Lead Free, Full RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Notes 2 and 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Case: SOT523
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
•
•
•
•
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
•
•
Drain
SOT523
D
Gate
G
S
Source
Top View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
2N7002T-7-F
2N7002T-13-F
2N7002TQ-7-F
2N7002TQ-13-F
Qualification
Case
Packaging
Commercial
Commercial
Automotive
Automotive
SOT523
SOT523
SOT523
SOT523
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
72 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
72
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2005
2006
2007
2008
2009
2010
2011
2012
Code
S
T
U
V
W
X
Y
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
2N7002T
Document number: DS30301 Rev. 14 - 2
2N7002T
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Units
V
V
60
Drain-Gate Voltage RGS ≤ 1.0MΩ
VDGR
Gate-Source Voltage
Continuous
Pulsed
Continuous
±20
±40
115
73
V
VGSS
Drain Current (Note 5)
Continuous @ 100°C
Pulsed
mA
ID
800
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Symbol
Pd
Rθ
Value
150
Units
mW
°C/W
°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
833
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol Min
Typ Max Unit
Test Condition
VGS = 0V, ID = 10μA
60
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
@ TC = 25°C
@ TC = 125°C
1.0
500
µA
nA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
Gate-Body Leakage
±10
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
1.0
2.0
V
VGS(th)
⎯
2.0
4.4
VDS = VGS, ID = 250μA
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
Static Drain-Source On-Resistance
@ Tj = 25°C
@ Tj = 125°C
7.5
13.5
RDS (ON)
⎯
Ω
On-State Drain Current
0.5
80
1.0
A
mS
ID(ON)
gFS
⎯
⎯
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
⎯
22
11
2.0
50
25
5.0
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
Output Capacitance
VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
7.0
11
20
20
ns
tD(ON)
tD(OFF)
⎯
⎯
VDD = 30V, ID = 0.2A,
Turn-Off Delay Time
ns RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
2N7002T
Document number: DS30301 Rev. 14 - 2
2N7002T
1.0
0.9
5
4
V
= 10V
GS
V
= 7.0V
GS
0.8
0.7
0.6
V
= 6.0V
GS
V
= 5.0V
GS
V
= 3.0V
GS
V
= 4.0V
3
0.5
0.4
GS
V
= 4.0V
GS
0.3
0.2
0.1
0
2
1
V
= 3.0V
= 2.5V
GS
V
= 10V
GS
V
= 7.0V
V
= 6.0V
GS
GS
V
= 5.0V
GS
V
GS
0.6
0
1
2
4
0
0.2
0.4
3
5
1.0
0.8
ID, DRAIN-SOURCE CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
Fig. 1 On-Region Characteristics
3.0
2.5
2.0
2.5
2.0
I
= 250µA
D
V
I
= 10V
GS
= 500mA
D
1.5
1.0
1.5
1.0
0.5
0
0.5
0
75
TJ, JUNCTION TEMPERATURE (
Fig. 4 On-Resistance Variation with Temperature
-50
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 3 Gate Threshold Variation with Temperature
-25
0
50
75
125
C)
25
50
100 125 150
C)
0
100
150
25
°
°
60
50
5.0
4.5
f = 1MHz
4.0
3.5
3.0
2.5
2.0
40
30
20
ID = 50mA
C
iss
1.5
1.0
0.5
0
C
oss
10
0
C
rss
0
5
10
15
20
25
30
10
2
0
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 On-Resistance vs. Gate-Source Voltage
Fig. 5 Typical Capacitance
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© Diodes Incorporated
2N7002T
Document number: DS30301 Rev. 14 - 2
2N7002T
Package Outline Dimensions
A
SOT523
Dim
A
B
C
D
G
H
J
K
L
Min
Max
0.30
0.85
1.75
⎯
1.10
1.70
0.10
0.80
0.30
0.20
0.65
8°
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
⎯
0.15
0.75
1.45
⎯
0.90
1.50
0.00
0.60
0.10
0.10
0.45
0°
C
B
G
H
K
M
N
M
N
α
J
L
D
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
1.8
0.4
0.51
1.3
Z
C
0.7
X
E
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© Diodes Incorporated
2N7002T
Document number: DS30301 Rev. 14 - 2
2N7002T
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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© Diodes Incorporated
2N7002T
Document number: DS30301 Rev. 14 - 2
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