2N7002T-C [SECOS]

N-Channel Plastic- Encapsulate MOSFETS;


型号：	2N7002T-C
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	N-Channel Plastic- Encapsulate MOSFETS 开关光电二极管晶体管
文件：	总3页 (文件大小：121K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2N7002T

115 mAMPS, 60VOLTS, R

=7.5 W

DS(on)

Elektronische Bauelemente

Small Signal MOSFET

RoHS Compliant Product

Small Signal MOSFET

115 mAmps, 60 Volts

N–Channel SOT–523

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Symbol

Value

Unit

Vdc

N–Channel

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–Source Voltage

– Continuous

ā20

ā40

Vdc

Vpk

– Non–repetitive (t ≤ 50 µs)

GSM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

150

1.8

mW/°C

(Note 3.) T = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

833

°C/W

°C

θJA

SOT–523

–ā55 to

+150

Junction and Storage Temperature

T , T

stg

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

3. FR–5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

Gate

Source

72 = Device Code

SOT-523

Dim

Min

1.500 1.700

0.750 0.850

Max

0.600 0.900

0.150 0.300

0.900 1.100

0.000 0.100

0.100 0.200

0.100 0.300

0.400 0.600

1.450 1.750

0.250 0.350

All Dimension in mm

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

2N7002T

115 mAMPS, 60VOLTS, RDS(on)=7.5 W

Elektronische Bauelemente

Small Signal MOSFET

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

–

Vdc

(BR)DSS

= 0, I = 10 µAdc)

Zero Gate Voltage Drain Current

(V = 0, V = 60 Vdc)

= 25°C

= 125°C

–

1.0

500

µAdc

nAdc

DSS

GS DS

Gate–Body Leakage Current, Forward

(V = 20 Vdc)

–

GSSF

Gate–Body Leakage Current, Reverse

(V = –ā20 Vdc)

–

–10

GSSR

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

1.0

0.5

–

2.0

–

Vdc

GS(th)

= V , I = 250 µAdc)

On–State Drain Current

(V ≥ 2.0 V , V

D(on)

= 10 Vdc)

DS DS(on) GS

Static Drain–Source On–State Resistance

Ohms

–

13.5

7.5

GS = 10 V, ID = 500 mAdc)

TC = 25°C

DS(on)

GS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C

Forward Transconductance

(V = 10 V, I = 200 mAdc)

–

DYNAMIC CHARACTERISTICS

Input Capacitance

–

iss

= 25 Vdc, V

= 0, f = 1.0 MHz)

Output Capacitance

(V = 25 Vdc, V

oss

= 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(V = 25 Vdc, V = 0, f = 1.0 MHz)

5.0

rss

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

–

d(on)

= 30 Vdc, I ^ 200 mAdc,

= 25 Ω, R = 150 Ω, V

= 10 V)

gen

Turn–Off Delay Time

d(off)

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 2 of 3

2N7002T

115 mAMPS, 60VOLTS, R

=7.5 W

DS(on)

Elektronische Bauelemente

Small Signal MOSFET

TYPICAL ELECTRICAL CHARACTERISTICS

0.9

0.8

0.7

0.6

V_GS= 5V

V_GS= 4V

V_GS= 10,7,6V

2.2

1.8

1.4

V_GS= 3V

0.5

0.4

0.3

0.2

0.1

V_GS= 4V

V_GS= 3V

V_GS= 5, 6, 7, 10V

0.8

0.6

0.2

0.4

0.6

1.0

I_D, DRAIN-SOURCE CURRENT (A)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current

1.2

2.2

V_GS= 10V

I_D= 500mA

1.8

1.6

1.1

1.4

1.2

0.9

0.8

0.6

0.4

0.8

0.7

-50

-25

100

125

150

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (°C)

Fig. 3 Gate Threshold Variation with Temperature

Fig. 4 On-Resistance Variation with Temperature

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

I_D= 50mA

C_iss

1.0

0.5

0.0

C_oss

C_rss

V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 6 On-Resistance vs. Gate-Source Voltage

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 5 Typical Capacitance

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 3 of 3

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