2N3903ZL1 [ONSEMI]

200mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN;
2N3903ZL1
型号: 2N3903ZL1
厂家: ONSEMI    ONSEMI
描述:

200mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

开关 晶体管
文件: 总7页 (文件大小:124K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2N3903, 2N3904  
General Purpose  
Transistors  
NPN Silicon  
Features  
http://onsemi.com  
PbFree Packages are Available*  
COLLECTOR  
3
MAXIMUM RATINGS  
2
BASE  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
1
60  
Vdc  
EMITTER  
6.0  
Vdc  
Collector Current Continuous  
Total Device Dissipation  
I
200  
mAdc  
C
P
D
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
TO92  
CASE 29  
STYLE 1  
Total Device Dissipation  
P
@ T = 25°C  
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
1
1
2
2
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
3
3
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
THERMAL CHARACTERISTICS (Note 1)  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
q
JA  
R
83.3  
MARKING DIAGRAMS  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates Data in addition to JEDEC Requirements.  
2N  
390x  
YWWG  
G
x
Y
= 3 or 4  
= Year  
WW = Work Week  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 Rev. 8  
2N3903/D  
 
2N3903, 2N3904  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage (Note 2) (I = 1.0 mAdc, I = 0)  
V
40  
60  
6.0  
Vdc  
Vdc  
C
B
(BR)CEO  
(BR)CBO  
(BR)EBO  
CollectorBase Breakdown Voltage (I = 10 mAdc, I = 0)  
V
V
C
E
EmitterBase Breakdown Voltage (I = 10 mAdc, I = 0)  
Vdc  
E
C
Base Cutoff Current (V = 30 Vdc, V = 3.0 Vdc)  
I
BL  
50  
50  
nAdc  
nAdc  
CE  
EB  
Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc)  
I
CEX  
CE  
EB  
ON CHARACTERISTICS  
DC Current Gain (Note 2)  
h
FE  
(I = 0.1 mAdc, V = 1.0 Vdc)  
2N3903  
2N3904  
2N3903  
2N3904  
2N3903  
2N3904  
2N3903  
2N3904  
2N3903  
2N3904  
20  
40  
35  
70  
50  
100  
30  
60  
15  
30  
C
CE  
(I = 1.0 mAdc, V = 1.0 Vdc)  
C
CE  
(I = 10 mAdc, V = 1.0 Vdc)  
150  
300  
C
CE  
(I = 50 mAdc, V = 1.0 Vdc)  
C
CE  
(I = 100 mAdc, V = 1.0 Vdc)  
C
CE  
CollectorEmitter Saturation Voltage (Note 2)  
(I = 10 mAdc, I = 1.0 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
0.2  
0.3  
C
B
(I = 50 mAdc, I = 5.0 mAdc  
C
B
BaseEmitter Saturation Voltage (Note 2)  
(I = 10 mAdc, I = 1.0 mAdc)  
V
BE(sat)  
0.65  
0.85  
0.95  
C
B
(I = 50 mAdc, I = 5.0 mAdc)  
C
B
SMALLSIGNAL CHARACTERISTICS  
CurrentGain Bandwidth Product  
f
T
MHz  
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)  
2N3903  
2N3904  
250  
300  
C
CE  
Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz)  
C
obo  
4.0  
8.0  
pF  
pF  
CB  
E
Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz)  
C
ibo  
EB  
C
Input Impedance  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
h
k W  
ie  
re  
fe  
2N3903  
2N3904  
1.0  
1.0  
8.0  
10  
C
CE  
4  
Voltage Feedback Ratio  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
h
h
X 10  
2N3903  
2N3904  
0.1  
0.5  
5.0  
8.0  
C
CE  
SmallSignal Current Gain  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
2N3903  
2N3904  
50  
100  
200  
400  
C
CE  
Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
h
oe  
1.0  
40  
mmhos  
C
CE  
Noise Figure  
(I = 100 mAdc, V = 5.0 Vdc, R = 1.0 k W, f = 1.0 kHz)  
NF  
dB  
2N3903  
2N3904  
6.0  
5.0  
C
CE  
S
SWITCHING CHARACTERISTICS  
Delay Time  
t
t
35  
35  
ns  
ns  
ns  
d
(V = 3.0 Vdc, V = 0.5 Vdc,  
CC  
BE  
I
= 10 mAdc, I = 1.0 mAdc)  
C
B1  
Rise Time  
t
r
Storage Time  
(V = 3.0 Vdc, I = 10 mAdc,  
2N3903  
2N3904  
175  
200  
CC  
B1  
C
s
I
= I = 1.0 mAdc)  
B2  
Fall Time  
t
f
50  
ns  
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.  
http://onsemi.com  
2
 
2N3903, 2N3904  
ORDERING INFORMATION  
Device  
2N3903RLRM  
2N3904  
Package  
TO92  
Shipping  
2000 / Ammo Pack  
5000 Units / Bulk  
5000 Units / Bulk  
TO92  
2N3904G  
TO92  
(PbFree)  
2N3904RLRA  
TO92  
2000 / Tape & Reel  
2000 / Tape & Reel  
2N3904RLRAG  
TO92  
(PbFree)  
2N3904RLRM  
TO92  
2000 / Ammo Pack  
2000 / Ammo Pack  
2N3904RLRMG  
TO92  
(PbFree)  
2N3904RLRP  
TO92  
2000 / Ammo Pack  
2000 / Ammo Pack  
2N3904RLRPG  
TO92  
(PbFree)  
2N3904RL1G  
TO92  
(PbFree)  
2000 / Tape & Reel  
2N3904ZL1  
TO92  
2000 / Ammo Pack  
2000 / Ammo Pack  
2N3904ZL1G  
TO92  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
+3 V  
DUTY CYCLE = 2%  
300 ns  
+10.9 V  
275  
10 k  
-ꢀ0.5 V  
C < 4 pF*  
S
< 1 ns  
* Total shunt capacitance of test jig and connectors  
Figure 1. Delay and Rise Time Equivalent Test Circuit  
+3 V  
t
1
10 < t < 500 ms  
1
+10.9 V  
DUTY CYCLE = 2%  
275  
10 k  
0
C < 4 pF*  
S
1N916  
-ꢀ9.1 V′  
< 1 ns  
* Total shunt capacitance of test jig and connectors  
Figure 2. Storage and Fall Time Equivalent Test Circuit  
http://onsemi.com  
3
2N3903, 2N3904  
TYPICAL TRANSIENT CHARACTERISTICS  
T = 25°C  
J
T = 125°C  
J
10  
5000  
V
= 40 V  
CC  
I /I = 10  
3000  
2000  
7.0  
C B  
5.0  
1000  
700  
C
ibo  
500  
3.0  
2.0  
Q
T
300  
200  
C
obo  
Q
A
100  
70  
1.0  
0.1  
50  
0.2 0.3 0.5 0.7 1.0  
2.0 3.0 5.0 7.0 10  
20 30 40  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
200  
200  
REVERSE BIAS VOLTAGE (VOLTS)  
I , COLLECTOR CURRENT (mA)  
C
Figure 3. Capacitance  
Figure 4. Charge Data  
500  
500  
I /I = 10  
C B  
V
= 40 V  
CC  
I /I = 10  
300  
200  
300  
200  
C B  
100  
70  
100  
70  
t @ V = 3.0 V  
r CC  
50  
50  
30  
20  
30  
20  
40 V  
15 V  
10  
10  
2.0 V  
7
5
7
5
t @ V = 0 V  
OB  
d
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 5. TurnOn Time  
Figure 6. Rise Time  
500  
500  
1
t= t - / t  
8 f  
s
s
V
I
= 40 V  
CC  
300  
200  
300  
200  
I
= I  
B1 B2  
= I  
B1 B2  
I /I = 20  
C B  
I /I = 10  
C B  
I /I = 20  
C B  
100  
70  
100  
70  
I /I = 20  
C B  
50  
50  
I /I = 10  
C B  
I /I = 10  
C B  
30  
20  
30  
20  
10  
10  
7
5
7
5
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 7. Storage Time  
Figure 8. Fall Time  
http://onsemi.com  
4
2N3903, 2N3904  
TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS  
NOISE FIGURE VARIATIONS  
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)  
12  
10  
8
14  
SOURCE RESISTANCE = 200 W  
I = 1.0 mA  
f = 1.0 kHz  
I = 1.0 mA  
C
12  
10  
8
C
I = 0.5 mA  
C
SOURCE RESISTANCE = 200 W  
I = 0.5 mA  
I = 50 mA  
C
C
6
4
I = 100 mA  
C
SOURCE RESISTANCE = 1.0 k  
I = 50 mA  
6
4
2
0
C
2
0
SOURCE RESISTANCE = 500 W  
I = 100 mA  
C
0.1 0.2  
0.4  
1.0 2.0 4.0  
10  
20  
40  
100  
0.1 0.2  
0.4  
1.0 2.0  
4.0  
10  
20  
40  
100  
f, FREQUENCY (kHz)  
R , SOURCE RESISTANCE (k OHMS)  
S
Figure 9.  
Figure 10.  
h PARAMETERS  
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)  
100  
300  
200  
50  
20  
10  
5
100  
70  
50  
30  
2
1
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Current Gain  
Figure 12. Output Admittance  
20  
10  
10  
7.0  
5.0  
5.0  
2.0  
3.0  
2.0  
1.0  
0.5  
1.0  
0.7  
0.5  
0.2  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 13. Input Impedance  
Figure 14. Voltage Feedback Ratio  
http://onsemi.com  
5
2N3903, 2N3904  
TYPICAL STATIC CHARACTERISTICS  
2.0  
1.0  
T = +125°C  
J
V
CE  
= 1.0 V  
+25°C  
-ꢀ55°C  
0.7  
0.5  
0.3  
0.2  
0.1  
0.1  
0.2  
0.3  
0.5 0.7  
1.0  
2.0  
3.0  
5.0 7.0 10  
20  
30  
50  
70 100  
200  
I , COLLECTOR CURRENT (mA)  
C
Figure 15. DC Current Gain  
1.0  
0.8  
0.6  
0.4  
T = 25°C  
J
I = 1.0 mA  
C
10 mA  
30 mA  
100 mA  
0.2  
0
0.01  
0.02  
0.03  
0.05 0.07 0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
I , BASE CURRENT (mA)  
B
Figure 16. Collector Saturation Region  
1.2  
1.0  
0.8  
1.0  
T = 25°C  
J
V
@ I /I =10  
C B  
BE(sat)  
+25°C TO +125°C  
-ꢀ55°C TO +25°C  
0.5  
0
q
FOR V  
CE(sat)  
VC  
V
BE  
@ V =1.0 V  
CE  
0.6  
0.4  
-ꢀ0.5  
-ꢀ1.0  
-ꢀ55°C TO +25°C  
+25°C TO +125°C  
V
@ I /I =10  
C B  
CE(sat)  
q
FOR V  
BE(sat)  
VB  
0.2  
0
-ꢀ1.5  
-ꢀ2.0  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
0
20  
40  
60  
80 100 120 140 160 180 200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 17. “ON” Voltages  
Figure 18. Temperature Coefficients  
http://onsemi.com  
6
2N3903, 2N3904  
PACKAGE DIMENSIONS  
TO92 (TO226)  
CASE 2911  
ISSUE AM  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
STRAIGHT LEAD  
BULK PACK  
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
---  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
---  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
---  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
---  
D
X X  
G
J
H
V
K
L
---  
---  
N
P
R
V
0.105  
0.100  
---  
2.66  
2.54  
---  
C
SECTION XX  
0.115  
0.135  
2.93  
3.43  
1
N
---  
---  
N
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. CONTOUR OF PACKAGE BEYOND  
DIMENSION R IS UNCONTROLLED.  
A
BENT LEAD  
TAPE & REEL  
AMMO PACK  
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P  
AND BEYOND DIMENSION K MINIMUM.  
P
T
MILLIMETERS  
SEATING  
PLANE  
DIM MIN  
MAX  
5.20  
5.33  
4.19  
0.54  
2.80  
0.50  
---  
K
A
B
C
D
G
J
4.45  
4.32  
3.18  
0.40  
2.40  
0.39  
12.70  
2.04  
1.50  
2.93  
3.43  
D
X X  
G
K
N
P
R
V
J
2.66  
4.00  
---  
V
C
---  
SECTION XX  
1
N
STYLE 1:  
PIN 1. EMITTER  
2. BASE  
3. COLLECTOR  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,  
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC  
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC  
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For additional information, please contact your local  
Sales Representative  
2N3903/D  

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