2N3904 [SEME-LAB]
GENERAL PURPOSE NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS; 通用NPN晶体管高可靠性的应用
| 型号： | 2N3904 |
| 厂家： | 
SEME LAB |
| 描述： | GENERAL PURPOSE NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS |
| 文件： | 总2页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3904
S E M E
LA B
GENERAL PURPOSE
MECHANICAL DATA
NPN TRANSISTOR
FOR HIGH RELIABILITY
APPLICATIONS
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• CECC SCREENING OPTIONS
0.48 (0.019)
0.41 (0.016)
dia.
• HIGH SPEED SATURATED SWITCHING
2.54 (0.100)
Nom.
3
1
2
TO-18 METAL PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
A
V
V
V
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
60V
40V
CBO
CEO
EBO
6V
I
200mA
C
P
Total Device Dissipation @ T =25°C
350mW
3.33mW / °C
300°C/W
–55 to +175°C
D
A
Derate above 25°C
R
Thermal Resistance Junction – Ambient
Operating and Storage Temperature Range
JA
T
, T
J
STG
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00
2N3904
S E M E
LA B
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Test Conditions
Min.
40
Typ.
Max. Unit
V
V
V
Collector – Emitter Breakdown Voltage I = 1mA
I = 0
(BR)CEO*
(BR)CBO
(BR)EBO
C
B
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Base Cut-off Current
I = 10 A
I = 0
60
V
C
E
I = 10 A
I = 0
6
E
C
I
I
V
V
= 30V
= 3V
50
nA
50
BL
CEX
CE
EB
Collector – Emitter Cut-off Current
I = 10mA
I = 1mA
0.2
V
C
B
V
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
CE(sat)
BE(sat)*
I = 50mA
I = 5mA
0.3
C
B
I = 10mA
I = 1mA
0.65
0.85
V
C
B
V
I = 50mA
I = 5mA
0.95
C
B
I = 0.1mA
40
70
C
I = 1mA
C
h
DC Current Gain
V
= 1V
I = 10mA
100
60
300
—
FE*
CE
C
I = 50mA
C
I = 100mA
30
C
* Pulse Test: t
300 s,
2%.
p
SMALL SIGNAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V
= 20V
I = 10mA
CE
C
f
Current Gain Bandwidth Product
300
MHz
t
f = 100MHz
= 5V
V
I = 0
E
CB
C
C
Output Capacitance
Input Capacitance
4
8
pF
pF
ob
f = 1MHz
= 0.5V
V
I = 0
C
BE
ib
f = 1MHz
h
h
h
h
Input Impedance
1
1
10
40
8
k
ie
V
= 10V
CE
Output Admittance
hmos
x 10-4
—
oe
re
fe
I = 1mA
C
Voltage Feedback Ratio
Small Signal Current Gain
0.5
100
f = 1kHz
400
V
= 5V
I = 100 A
C
CE
N
Noise Figure
5
dB
F
f = 1kHz
R = 1k
S
SWITCHING CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Delay Time
Rise Time
Test Conditions
Min.
Typ.
Max. Unit
35
t
t
t
t
V
= 3V
V = 0.5V
d
CC
BE
I = 10mA
I
= 1mA
B1
35
ns
r
C
Storage Time
Fall Time
V
= 3V
V = 0.5V
BE
200
s
f
CC
I
= I = 1mA
50
B1
B2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00
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