2N3904 [VISHAY]
SMALL SIGNAL TRANSISTORS NPN; 小信号晶体管NPN
| 型号： | 2N3904 |
| 厂家： | 
VISHAY |
| 描述： | SMALL SIGNAL TRANSISTORS NPN |
| 文件： | 总3页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
2N3904
SMALL SIGNAL TRANSISTORS (NPN)
TO-92
FEATURES
0.142 (3.6)
0.181 (4.6)
¨ NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
¨ As complementary type, the PNP transistor
2N3906 is recommended.
¨ On special request, this transistor is also
manufactured in the pin configuration
TO-18.
¨ This transistor is also available in the SOT-23 case
0.022 (0.55)
max.Æ
with the type designation MMBT3904.
0.098 (2.5)
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
E
C
B
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
60
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
V
6.0
V
200
mA
Power Dissipation at TA = 25¡C
at TC = 25¡C
Ptot
625
1.5
mW
W
Thermal Resistance Junction to Ambient Air
Junction Temperature
RqJA
Tj
250(1)
150
¡C/W
¡C
Storage Temperature Range
TS
Ð 65 to +150
¡C
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
1/5/99
2N3904
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at IC = 10 mA, IE = 0
V(BR)CBO
60
Ð
V
Collector-Emitter Breakdown Voltage
at IC = 1 mA, IB = 0
V(BR)CEO
40
6
Ð
Ð
V
V
Emitter-Base Breakdown Voltage
at IE = 10 mA, IC = 0
V(BR)EBO
Collector Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
VCEsat
VCEsat
Ð
Ð
0.2
0.3
V
V
Base Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
VBEsat
VBEsat
Ð
Ð
0.85
0.95
V
V
Collector-Emitter Cutoff Current
VEB = 3 V, VCE = 30 V
ICEV
Ð
Ð
50
50
nA
nA
Emitter-Base Cutoff Current
VEB = 3 V, VCE = 30 V
IEBV
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 100 mA
hFE
hFE
hFE
hFE
hFE
40
70
100
60
Ð
Ð
300
Ð
Ð
Ð
Ð
Ð
Ð
30
Ð
Input Impedance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hie
hre
1
10
kW
Ð
Voltage Feedback Ratio
at VCE = 10 V, IC = 1 mA, f = 1 kHz
0.5 á 10Ð4
8 á 10Ð4
Gain-Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
fT
300
Ð
Ð
4
8
MHz
pF
Collector-Base Capacitance
at VCB = 5 V, f = 100 kHz
CCBO
Emitter-Base Capacitance
at VEB = 0.5 V, f = 100 kHz
CEBO
Ð
pF
2N3904
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Small Signal Current Gain
at VCE = 10 V, IC = 1 mA, f = 1 kHz
hfe
100
400
Ð
Output Admittance
at VCE = 1 V, IC = 1 mA, f = 1 kHz
hoe
1
40
mS
Noise Figure
at VCE = 5 V, IC = 100 mA, RG = 1 kW,
f = 10 É 15000 Hz
NF
td
tr
Ð
Ð
Ð
Ð
Ð
5
35
dB
ns
ns
ns
ns
Delay Time (see Fig. 1)
at IB1 = 1 mA, IC = 10 mA
Rise Time (see Fig. 1)
at IB1 = 1 mA, IC = 10 mA
35
Storage Time (see Fig. 2)
at ÐIB1 = IB2 = 1 mA, IC = 10 mA
ts
200
50
Fall Time (see Fig. 2)
at ÐIB1 = IB2 = 1 mA, IC = 10 mA
tf
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
相关型号：
2N3904-18F
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F, 3 PIN
CENTRAL
2N3904-18FLEADFREE
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F, 3 PIN
CENTRAL
2N3904-18R
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R, 3 PIN
CENTRAL
2N3904-18RLEADFREE
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R, 3 PIN
CENTRAL
2N3904-5T1
Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T1, 3 PIN
CENTRAL
2N3904-AMMO
TRANSISTOR 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
NXP
2N3904-AP-HF
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
©2020 ICPDF网 联系我们和版权申明