2N3904 [MCC]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | 2N3904 |
| 厂家： | 
Micro Commercial Components |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
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2N3904
Features
·
·
Through Hole Package
Capable of 600mWatts of Power Dissipation
NPN General
Purpose Amplifier
Pin Configuration
Bottom View
C
B
E
TO-92
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
A
E
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
40
60
Vdc
Vdc
Collector-Base Breakdown Voltage
(IC=10mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=10mAdc, IC=0)
B
6.0
Vdc
Base Cutoff Current
50
50
nAdc
nAdc
(VCE=30Vdc, VBE=3.0Vdc)
Collector Cutoff Current
(VCE=30Vdc, VBE=3.0Vdc)
ICEX
ON CHARACTERISTICS
C
hFE
DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=50mAdc, VCE=1.0Vdc)
(IC=100mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
40
70
100
60
300
30
VCE(sat)
0.2
0.3
Vdc
Vdc
D
VBE(sat)
0.65
300
0.85
0.95
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz)
Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz)
Noise Figure
(IC=100mAdc, VCE=5.0Vdc, RS=1.0kW
f=10Hz to 15.7kHz)
MHz
pF
G
Cobo
Cibo
NF
4.0
8.0
5.0
DIMENSIONS
MM
pF
INCHES
MIN
.175
.175
.500
.016
.135
.095
dB
DIM
A
B
C
D
MAX
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
NOTE
.185
.185
---
.020
.145
.105
SWITCHING CHARACTERISTICS
0.63
3.68
2.67
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
(VCC=3.0Vdc, VBE=0.5Vdc
IC=10mAdc, IB1=1.0mAdc)
(VCC=3.0Vdc, IC=10mAdc
IB1=IB2=1.0mAdc)
35
35
200
50
ns
ns
ns
ns
E
G
*Pulse Width £ 300ms, Duty Cycle£ 2.0%
www.mccsemi.com
2N3904
M C C
Base-Emitter ON Voltage vs
Collector Current
DC Current Gain vs Collector Current
220
200
160
120
80
1.2
1.0
VCE = 5.0V
VCE = 5.0V
0.8
TA = 25°C
hFE
VBE(ON) - (V)
0.6
0.4
TA = 100°C
40
0.2
0
0.1
10
100
1.0
10
100
0.1
1
IC - (mA)
IC (mA)
Collector Saturation
Volatge vs Collector Current
Base Saturation
Voltage vs Collector Current
1.2
1.1
.150
.125
.100
IC/IB = 10
TA = 25°C
IC/IB = 10
TA = 25°C
1.0
.90
VBE(SAT) - (V)
V
CE(SAT) - (V)
.075
.050
.025
0
.80
.70
.60
0.1
10
100
0.1
100
1.0
1.0
10
IC - (mA)
IC - (mA)
Capacitance vs
Reverse Bias Voltage
Collector Cutoff Current vs
Ambient Temperature
1000
100
1.0
8
f = 1 MHz
VCB = 20V
6
4
pF
ICBO - (mA)
CIB
10
2
0
COB
1.0
25
50
75
125 150
0.1
1.0
Volts - (V)
10
0
100
TA - (°C)
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2N3904
M C C
Maximum Power Dissipation vs
Ambient Temperature
Noise Figure vs
Source Resistance
800
600
400
200
0
12
10
8
IC = 1.0mA
TO-92
IC = 100mA
PD(MAX) - (mW)
NF - (dB)
6
4
2
0
SOT-23
f = 1.0kHz
50
100
150
200
1.0
0
0.1
10
RS - (kW)
100
TA - (°C)
Contours of Constant Gain
Current Gain
Bandwidth Product (f )
T
12
10
8
1000
V
CE = 10V
f = 1.0kHz
VCE - (V)
hfe
6
100
4
2
0
10
0.1
0.1
1.0
10
100
1.0
10
IC - (mA)
IC - (mA)
*100MHz increments from
200 to 500MHz
Switching Times vs
Collector Current
Noise Figure vs
Frequency
1000
6
5
4
3
2
VCE = 5.0V
I
B1 = IB2 = IC/10
tr
ts
100
IC = 0.5mA RS = 200W
T - (ns)
NF - (dB)
tf
10
IC = 50mA RS = 1.0kW
IC = 100mA RS = 500W
1
0
1.0
0.1
1.0
100
1.0
10
IC - (mA)
100
10
f - (kHz)
www.mccsemi.com
2N3904
M C C
Output Admittance
Input Impedance
10
100
VCE = 10V
f = 1.0kHz
VCE = 10V
f = 1.0kHz
hoe - (mW)
10
hie - (kW)
1.0
0.1
0.1
1
1.0
IC - (mA)
10
0.1
1.0
IC - (mA)
10
Turn On and Turn Off Times vs
Collector Current
Voltage Feedback Ratio
100
1000
100
toff
h
fe - (X10-4)
T - (ns)
10
ton
10
ton IB1 = IC/10
BE(OFF) = 0.5V
off IB1 = IB2 = IC/10
V
t
1.0
1.0
0.1
1.0
10
1.0
10
100
IC - (mA)
IC - (mA)
www.mccsemi.com
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