2N3904 [TRSYS]
NPN SIMALL SIGNAL TRANSISTOR; NPN SIMALL信号晶体管
| 型号： | 2N3904 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | NPN SIMALL SIGNAL TRANSISTOR |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3904
NPN SMALL SIGNAL TRANSISTOR
Features
Epitaxial Planar Die Construction
Available in both Through-Hole and Surface
Mount Packages
E
A
TO-92
Ideal for Switching and Amplifier Applications
Complementary PNP Type Available
(2N3906)
Dim
A
Min
4.32
4.32
12.50
0.36
3.15
2.29
1.14
Max
4.83
4.78
15.62
0.56
3.94
2.79
1.40
B
C
B
C
D
Mechanical Data
E
Case: TO-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: Type Number
G
D
H
BOTTOM
VIEW
C B E
All Dimensions in mm
H
H
Weight: 0.18 grams (approx.)
G
@ TA = 25 C unless otherwise specified
Characteristic
Maximum Ratings
Symbol
VCBO
VCEO
VEBO
IC
2N3904
Unit
V
Collector-Base Voltage
60
40
Collector-Emitter Voltage
V
Emitter-Base Voltage
5.0
100
200
500
250
V
Collector Current - Continuous
Collector Current - Peak
mA
mA
mW
K/W
C
ICM
Pd
Power Dissipation
(Note 1)
(Note 1)
R
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
JA
Tj, TSTG
-55 to +150
Notes:
1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature.
2. Pulse test: Pulse width 300 s, duty cycle 2%.
@ TA = 25 C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Max
Unit
Test Condition
-VCE = 1.0V,- IC = 0.1mA
-VCE = 1.0V,- IC = 1.0mA
-VCE = 1.0V,- IC = 10mA
-VCE = 1.0V,- IC = 50mA
-VCE = 1.0V,- IC = 100mA
50
70
hFE
DC Current Gain
100
60
300
30
(Note 2)
-IC = 10mA,- IB = 1.0mA
-IC = 50mA,- IB = 5.0mA
VCE(SAT)
Collector Saturation Voltage
Base Saturation Voltage
0.25
0.40
V
V
(Note 2)
-IC = 10mA, -IB = 1.0mA
-IC = 50mA, -IB = 5.0mA
VBE(SAT)
0.85
0.95
-VEB = 3.0V, -VCE = 30V
-VEB = 3.0V, -VCE = 30V
-IC = 10µA, -IB = 0
ICEX
IBL
Collector Cutoff Current
50
50
—
—
—
nA
nA
V
Emitter Cutoff Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-base Breakdown voltage
60
40
-IC = 1.0mA,- IE = 0 (Note 2)
-IE = 10µA,- IC = 0
V
5.0
V
VCE = 20V, -IC = 10mA,
-f = 100MHz
fT
Gain Bandwidth Product
250
—
MHz
-VCB = 5.0V, -IE = 0, f = 100kHz
-VEB = 0.5V, -IC = 0, f = 100kHz
CCBO
CEBO
Collector-Base Capacitance
Emitter-Base Capacitance
4.5
10
pF
pF
-VCE = 5.0V, -IC = 100 A,
RG = 1.0k , -f = 10 to 15000Hz
Noise Figure
Delay Time
Rise Time
5.0
35
dB
ns
ns
ns
ns
-IB1 = 1.0mA, -IC = 10mA,
td
tr
V
CC = 3.0V, VBE(off) = 0.5V
-IB1 = 1.0mA,- IC = 10mA,
-VCC = 3.0V, -VBE(off) = 0.5V
35
-IB1 =- IB2 = 1.0mA,
-IC = 10mA, -VCC = 3.0V
ts
tf
Storage Time
Fall Time
225
75
-IB1 =- IB2 = 1.0mA,
-IC = 10mA, -VCC = 3.0V
Notes:
1. Leads maintained at a distance of 2.0mm from body at specified ambient temperature.
2. Pulse test: Pulse width 300 s, duty cycle 2%.
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