TEA1201TS_技术文档

INTEGRATED CIRCUITS

DATA SHEET

TEA1201TS

0.95 V starting basic power unit

Product speciﬁcation

2002 Jun 06

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

CONTENTS

1

2

3

4

5

6

7

FEATURES

APPLICATIONS

GENERAL DESCRIPTION

ORDERING INFORMATION

QUICK REFERENCE DATA

BLOCK DIAGRAM

PINNING INFORMATION

7.1

7.2

Pinning

Pin description

8

FUNCTIONAL DESCRIPTION

8.1

8.2

8.3

8.4

8.5

8.6

8.7

8.8

8.9

8.10

Control mechanism

Synchronous rectification

Start-up

Undervoltage lockout

Shut-down

Power switches

Temperature protection

Current limiters

External synchronization and PWM-only mode

Behaviour at input voltage exceeding the

specified range

8.11

8.12

Control of the additional switch

Low battery detector

9

LIMITING VALUES

10

THERMAL CHARACTERISTICS

QUALITY SPECIFICATION

CHARACTERISTICS

11

12

13

APPLICATION INFORMATION

External component selection

PACKAGE OUTLINE

13.1

14

15

SOLDERING

15.1

Introduction to soldering surface mount

packages

15.2

15.3

15.4

15.5

Reflow soldering

Wave soldering

Manual soldering

Suitability of surface mount IC packages for

wave and reflow soldering methods

16

17

18

DATA SHEET STATUS

DEFINITIONS

DISCLAIMERS

2002 Jun 06

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Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

1

FEATURES

3

GENERAL DESCRIPTION

• Complete DC-to-DC converter circuit, one current

switch and a battery low detector

The TEA1201TS is a fully integrated battery power unit

including a high-efficiency DC-to-DC converter which runs

from a 1-cell NiCd or NiMH battery, a current switch and a

low battery detector. The circuit can be arranged in several

ways to optimize the application circuit of a power supply

system. Therefore, the DC-to-DC converter can be

arranged for upconversion or downconversion and the low

battery detector can be configured for several types of

batteries. Accurate low battery detection is possible while

all other blocks are switched off.

• Configurable for 1, 2 or 3-cell Nickel-Cadmium (NiCd)

or Nickel Metal Hydride (NiMH) batteries and 1 Lithium

Ion (Li-Ion) battery

• Guaranteed DC-to-DC converter start-up from 1-cell

NiCd or NiMH battery, even with a load current

• Upconversion or downconversion

• Internal power MOSFETs featuring a low R_DSonof

approximately 0.1 Ω

The DC-to-DC converter features efficient, compact and

dynamic power conversion using a digital control concept

comparable with Pulse Width Modulation (PWM) and

Pulse Frequency Modulation (PFM), integrated CMOS

power switches with a very low R_DSonand fully

synchronous rectification.

• Synchronous rectification for high efficiency

• Soft start

• PWM-only operating option

• Stand-alone low battery detector requires no additional

supply voltage

The device operates at a switching frequency of 600 kHz

which enables the use of external components with

minimum size. The switching frequency can be

synchronized to an external high frequency clock signal.

Optionally, the device can be kept in PWM control mode

only. Deadlock is prevented by an on-chip undervoltage

lockout circuit.

• Low battery detection level at 0.90 V, externally

adjustable to a higher level

• Adjustable output voltages

• Shut-down function

• Small outline package

• Advanced 0.6 µm BICMOS process.

Active current limiting enables efficient conversion in

pulsed-load systems such as Global System for Mobile

communication (GSM) and Digital Enhanced Cordless

Telecommunications (DECT).

2

APPLICATIONS

• Cellular phones

The switch can be used to control the connection of (a part

of) the output load. It shows a low pin-to-pin resistance of

500 mΩ.

• Cordless phones

• Personal Digital Assistants (PDAs)

• Portable audio players

• Pagers

The low battery detector has a built-in detection level

which is optimum for a 1-cell NiCd or NiMH battery.

• Mobile equipment.

4

ORDERING INFORMATION

TYPE

PACKAGE

NUMBER

NAME

DESCRIPTION

VERSION

TEA1201TS

SSOP16

plastic shrink small outline package; 16 leads; body width 4.4 mm

SOT369-1

2002 Jun 06

3

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

5

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC-to-DC converter

UPCONVERSION

V_I(up)

input voltage

V_I(start)

V_O(uvlo)

0.93

−

5.50

V

V_O(up)

V_I(start)

V_O(uvlo)

output voltage

5.50

1.00

2.4

start-up input voltage

undervoltage lockout voltage

I_L< 10 mA

0.96

2.2

2.0

DOWNCONVERSION

V_I(dwn)

input voltage

output voltage

V_O(uvlo)

1.30

−

5.50

V

V_O(dwn)

CURRENT LEVELS

I_q(DCDC)

quiescent current at pin

−

110

−

µA

UPOUT/DNIN

I_shdwn

current in shut-down mode

V_LBI1= V_I(up)= 1.2 V

−

65

−

µA

I_LX(max)

maximum continuous current at T_amb= 80 °C

−

1.0

A

pins LX1 and LX2

∆I_lim

current limit deviation

I_limset to 1.0 A

upconversion

−12

−

+12

%

downconversion

POWER MOSFETS

R_DSon(N)drain-to-source on-state

T_j= 27 °C; I_DS= 100 mA

T_j= 27 °C; I_DS= −100 mA

−

110

125

200

250

mΩ

resistance NFET

R_DSon(P)

drain-to-source on-state

resistance PFET

EFFICIENCY

η

efﬁciency upconversion

V_Oup to 3.3 V; see Fig.9

V_I= 1.2 V; I_L= 100 mA

V_I= 2.4 V; I_L= 10 mA

−

84

92

−

%

TIMING

f_sw

switching frequency

PWM mode

480

6

600

13

720

20

kHz

f_i(sync)

synchronization clock input

frequency

MHz

t_start

start-up time

−

10

−

ms

Switch

R_DSon

drain-to-source resistance in

switched-on state

V_O(up)= V_I(down)= 5 V;

V_FB1< 0.4 V

−

500

750

mΩ

I_O(max)

maximum output current in

switched-on state

V_FB1< 0.4 V

−

0.40

A

General characteristics

V_ref

reference voltage

1.165

1.190

1.215

V

2002 Jun 06

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Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

7

PINNING INFORMATION

Pinning

7.1

handbook, halfpage

LX1

LX2

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

SHDWN0

UPOUT/DNIN

ILIM

U/D

SYNC/PWM

GND0

FB0

TEA1201TS

OUT1

V

ref

FB1

LBO

LBI1

GND

MGW788

Fig.2 Pin configuration.

7.2

Pin description

Table 1 SSOP16 package

SYMBOL

LX1

DESCRIPTION

1

2

inductor connection 1

DC-to-DC converter shut-down input

SHDWN0

UPOUT/DNIN

ILIM

3

up mode: DC-to-DC converter output; down mode: DC-to-DC converter input

4

5

current limiting resistor connection

switch output

OUT1

6

FB1

7

switch control input

GND

8

internal supply ground

LBI1

9

low battery detector input 1

low battery detector output

reference voltage

LBO

10

11

12

13

14

15

16

V_ref

FB0

DC-to-DC converter feedback input

DC-to-DC converter ground

synchronization clock input or PWM-only selection input

conversion mode selection input

inductor connection 2

GND0

SYNC/PWM

U/D

LX2

2002 Jun 06

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Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

8

FUNCTIONAL DESCRIPTION

Control mechanism

Figure 4 shows the spread of the output voltage window.

The absolute value is mostly dependent on spread, while

the actual window size (V_wdw(high)− V_wdw(low)) is not

affected. For one specific device, the output voltage will

not vary more than 2% (typical value).

8.1

The TEA1201TS DC-to-DC converter is able to operate in

PFM (discontinuous conduction) or PWM (continuous

conduction) operating mode. All switching actions are

completely determined by a digital control circuit which

uses the output voltage level as its control input. This novel

digital approach enables the use of a new pulse width and

frequency modulation scheme, which ensures optimum

power efficiency over the complete range of operation of

the converter.

In low output power situations, the TEA1201TS will switch

over to PFM (discontinuous conduction) operating mode.

In this mode, regulation information from an earlier PWM

operating mode is used. This results in optimum inductor

peak current levels in the PFM mode, which are slightly

larger than the inductor ripple current in the PWM mode.

As a result, the transition between PFM and PWM mode is

optimum under all circumstances. In the PFM mode the

TEA1201TS regulates the output voltage to the high

window limit as shown in Fig.3.

When high output power is requested, the device will

operate in PWM (continuous conduction) operating mode.

This results in minimum AC currents in the circuit

components and hence optimum efficiency, minimum

costs and low EMC. In this operating mode, the output

voltage is allowed to vary between two predefined voltage

levels. As long as the output voltage stays within this

so-called window, switching continues in a fixed pattern.

8.2

Synchronous rectiﬁcation

For optimum efficiency over the whole load range,

synchronous rectifiers inside the TEA1201TS ensure that

during the whole second switching phase, all inductor

current will flow through the low-ohmic power MOSFETs.

Special circuitry is included which detects when the

inductor current reaches zero. Following this detection, the

digital controller switches off the power MOSFET and

proceeds with regulation.

When the output voltage reaches one of the window

borders, the digital controller immediately reacts by

adjusting the pulse width and inserting a current step in

such a way that the output voltage stays within the window

with higher or lower current capability. This approach

enables very fast reaction to load variations. Figure 3

shows the response of the converter to a sudden load

increase. The upper trace shows the output voltage.

8.3

Start-up

Start-up from low input voltage in the boost mode is

realized by an independent start-up oscillator, which starts

switching the N-type power MOSFET as soon as the

low-battery detector detects a sufficiently high voltage.

The inductor current is limited internally to ensure

soft-starting. The switch actions of the start-up oscillator

will increase the output voltage. As soon as the output

voltage is high enough for normal regulation, the digital

control system takes control over the power MOSFETs.

The ripple on top of the DC level is a result of the current

in the output capacitor, which changes in sign twice per

cycle, times the internal Equivalent Series Resistance

(ESR) of the capacitor. After each ramp-down of the

inductor current, i.e. when the ESR effect increases the

output voltage, the converter determines what to do in the

next cycle. As soon as more load current is taken from the

output the output voltage starts to decay.

When the output voltage becomes lower than the low limit

of the window, a corrective action is taken by a ramp-up of

the inductor current during a much longer time. As a result,

the DC current level is increased and normal PWM control

can continue. The output voltage (including ESR effect) is

again within the predefined window.

8.4

Undervoltage lockout

As a result of too high a load or disconnection of the input

power source, the output voltage can drop so low that

normal regulation cannot be guaranteed. In this event, the

device switches back to start-up mode. If the output

voltage drops even further, switching is stopped

completely.

2002 Jun 06

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Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

load increase

start corrective action

handbook, full pagewidth

V

o

high window limit

low window limit

time

I

L

MGK925

time

Fig.3 Response to load increase.

handbook, full pagewidth

V

wdw(high)

2%

V

wdw(high)

2%

+2%

V

wdw(low)

V

O

V

wdw(high)

2%

−2%

V

wdw(low)

V

wdw(low)

typical

situation

maximum

positive spread

maximum

negative spread

MGW789

Fig.4 Output voltage window spread.

8

2002 Jun 06

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

8.5

Shut-down

8.10 Behaviour at input voltage exceeding the

speciﬁed range

When the shut-down input is set HIGH, the DC-to-DC

converter disables both switches and power consumption

is reduced to a few microamperes.

In general, an input voltage exceeding the specified range

is not recommended since instability may occur. There are

two exceptions:

8.6

Power switches

1. Upconversion: at an input voltage higher than the

target output voltage, but up to 5.5 V, the converter will

stop switching and the external Schottky diode will

take over. The output voltage will equal the input

voltage minus the diode voltage drop. Since all current

flows through the external diode in this situation, the

current limiting function is not active.

The power switches in the IC are one N-type and one

P-type power MOSFET, both having a typical

drain-to-source resistance of 100 mΩ. The maximum

average current in the power switches is 1.0 A at

T_amb= 80 °C.

8.7 Temperature protection

In the PWM mode, the P-type power MOSFET is

always on when the input voltage exceeds the target

output voltage. The internal synchronous rectifier

ensures that the inductor current does not fall below

zero. As a result, the achieved efficiency is higher in

this situation than standard PWM-controlled

converters achieve.

When the DC-to-DC converter operates in the PWM

mode, and the die temperature gets too high (typical value

is 190 °C), the converter and the switch stop operating.

They resume operation when the die temperature falls

below 90 °C again. As a result, low frequency cycling

between the on and off state will occur. It should be noted

that in the event of device temperatures at the cut-off limit,

the application differs strongly from maximum

specifications.

2. Downconversion: when the input voltage is lower than

the target output voltage, but higher than 2.2 V, the

P-type power MOSFET will stay conducting resulting

in an output voltage being equal to the input voltage

minus some resistive voltage drop. The current limiting

function remains active.

8.8

Current limiters

If the current in one of the power switches exceeds the

programmed limit in the PWM mode, the current ramp is

stopped immediately and the next switching phase is

entered. Current limiting is required to keep power

conversion efficient during temporary high loads.

Furthermore, current limiting protects the IC against

overload conditions, inductor saturation, etc.

8.11 Control of the additional switch

The switch will be in the on-state when its feedback input

is connected to ground. When the feedback input is higher

than 2 V, the power FET will be high-ohmic. The switch

always turns to the high-ohmic state when the shutdown

input is made HIGH.

The current limiting level is set by an external resistor

which must be connected between pin ILIM and ground for

downconversion, or between pins ILIM and UPOUT/DNIN

for upconversion.

8.12 Low battery detector

The low battery detector is an autonomous circuit which

can work at an input voltage down to 0.90 V. It is always

on, even when all other blocks are in the shut-down mode.

8.9

External synchronization and PWM-only mode

The low battery input (pin LBI1) is tuned to accept a 1-cell

NiCd or NiMH battery voltage directly. Hysteresis is

included for correct operation.

If an external high-frequency clock or a HIGH level is

applied to pin SYNC/PWM, the TEA1201TS will use PWM

regulation independent of the load applied.

The output of the low battery detector on pin LBO is an

open-collector output. The output is high (i.e. no current is

sunk by the collector) when the input voltage of the

detector is below the lower detection level.

In the event of a high-frequency clock being applied, the

switching frequency in the PWM mode will be exactly that

frequency divided by 22. In the PWM mode the quiescent

current of the device increases.

In the event that no external synchronization or PWM

mode selection is necessary, pin SYNC/PWM must be

connected to ground.

2002 Jun 06

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Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

9

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

voltage on any pin

CONDITIONS

MIN.

MAX.

UNIT

V_n

shut-down mode

operating mode

−0.2

−40

−20

−40

+6.5

+5.5

+150

+80

V

T_j

junction temperature

°C

V

T_amb

T_stg

V_es

ambient temperature

storage temperature

+125

electrostatic handling voltage

notes 1 and 2

Class II

Notes

1. ESD specification is in accordance with the JEDEC standard:

a) Human Body Model (HBM) tests are carried out by discharging a 100 pF capacitor through a 1.5 kΩ series

resistor.

b) Machine Model (MM) tests are carried out by discharging a 200 pF capacitor via a 0.75 µH series inductor.

2. Exception is pin ILIM: 1000 V HBM and 100 V MM.

10 THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R_th(j-a)

thermal resistance from junction to ambient in free air

143

K/W

11 QUALITY SPECIFICATION

In accordance with “SNW-FQ-611D”.

2002 Jun 06

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Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

12 CHARACTERISTICS

T_amb= −20 to +80 °C; all voltages are measured with respect to ground; positive currents ﬂow into the IC; unless

otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC-to-DC converter

UPCONVERSION; PIN U/D = LOW

V_I(up)

input voltage

V_I(start)

V_O(uvlo)

0.93

−

5.50

0.96 1.00

V

V_O(up)

V_I(start)

V_O(uvlo)

output voltage

−

V

start-up input voltage

undervoltage lockout voltage

I_L< 10 mA

note 1

2.0

2.2

2.4

DOWNCONVERSION; PIN U/D = HIGH

V_I(dwn)

input voltage

note 2

V_O(uvlo)

1.30

−

5.50

V

V_O(dwn)

output voltage

REGULATION

∆V_O(wdw)output voltage window size as a function PWM mode

1.5

2.0

2.5

%

of output voltage

CURRENT LEVELS

I_q(DCDC)

I_shdwn

I_lim(max)

∆I_lim

quiescent current at pin UPOUT/DNIN

current in shut-down mode

maximum current limit

note 3

−

110

65

5

−

µA

A

V_LBI1= V_I(up)= 1.2 V

current limit deviation

I_limset to 1.0 A; note 4

upconversion

−12

−

+12

1.0

%

A

downconversion

I_LX(max)

maximum continuous current at pins LX1 T_amb= 80 °C

and LX2

POWER MOSFETS

R_DSon(N)drain-to-source on-state resistance NFET T_j= 27 °C; I_DS= 100 mA

−

110

125

200

250

mΩ

R_DSon(P)

EFFICIENCY

η

drain-to-source on-state resistance PFET T_j= 27 °C; I_DS= −100 mA −

efﬁciency upconversion

V_Oup to 3.3 V; see note 5

and Fig.9

V_I= 1.2 V; I_L= 100 mA

V_I= 2.4 V; I_L= 10 mA

−

84

92

−

%

TIMING

f_sw

switching frequency

PWM mode

note 6

480

6

600

13

720

20

−

kHz

MHz

ms

f_i(sync)

t_start

synchronization clock input frequency

start-up time

−

10

DIGITAL INPUT LEVELS

V_lL(n)

LOW-level input voltage on all digital pins

0

−

0.4

V

2002 Jun 06

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Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

SYMBOL

PARAMETER

HIGH-level input voltage

CONDITIONS

note 7

MIN.

TYP.

MAX.

UNIT

V_IH(n)

on pins SYNC/PWM, SHDWN0

and SHDWN2

0.55V₄

−

V₄+ 0.3 V

all other digital input pins

V₄− 0.4 −

Switch: see Fig.5

R_DSondrain-to-source resistance in switched-on V_O(up)= V_I(dwn)= 5 V;

−

500

750

mΩ

state

V_FB1< 0.4 V

I_O(max)

maximum output current in switched-on

state

V_FB1< 0.4 V

−

0.40

A

Low battery detector

I_LBD

supply current of detector

transition time

V_I= 0.9 V

falling V_bat

−

20

2

−

µA

µs

t_t(HL)

DETECTION INPUT PIN LBI1

V_det

low battery detection level

falling V_bat

0.87

0.90 0.93

V

V_hys

low battery detection hysteresis

−

20

−

mV

TC_Vdet

TC_Vhys

temperature coefﬁcient of detection level

0

mV/K

temperature coefﬁcient of detection

hysteresis

0.175

DETECTION OUTPUT PIN LB0

I_O(sink)

output sink current

15

−

µA

General characteristics

V_ref

I_q

reference voltage

1.165

−

1.190 1.215

V

quiescent current at pin UPOUT/DNIN

ambient temperature

all blocks operating

270

+25

190

−

µA

°C

T_amb

T_max

−20

−

+80

−

internal temperature for cut-off

Notes

1. The undervoltage lockout level shows wide specification limits since it decreases at increasing temperature. When

the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore

the correct operation of this function is guaranteed over the whole temperature range. The undervoltage lockout level

is measured at pin UPOUT/DNIN.

2. When V_Iis lower than the target output voltage but higher than 2.2 V, the P-type power MOSFET will remain

conducting (duty factor is 100%), resulting in V_Ofollowing V_I.

3. The quiescent current is specified as the input current in the upconversion configuration at V_I= 1.20 V and

V_O= 3.30 V, using L1 = 6.8 µH, R1 = 150 kΩ and R2 = 91 kΩ.

4. The current limit is defined by resistor R10. This resistor must have a tolerance of 1%.

5. The specified efficiency is valid when using an output capacitor having an ESR of 0.1 Ω and an inductor of 6.8 µH

with an ESR of 0.05 Ω and a sufficient saturation current level.

6. The specified start-up time is the time between the connection of a 1.20 V input voltage source and the moment the

output reaches 3.30 V. The output capacitance equals 100 µF, the inductance equals 6.8 µH and no load is present.

7. V₄is the voltage at pin UPOUT/DNIN. If the applied HIGH-level voltage is less than V₄− 1 V, the quiescent current

of the device will increase.

2002 Jun 06

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Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

MGU641

600

handbook, full pagewidth

R

DS(on)

mΩ

500

SWITCH

400

300

200

100

0

0.00

1.00

2.00

3.00

4.00

5.00

6.00

V (V)

I

Fig.5 Switch drain-to-source on-state resistance as a function of input voltage.

2002 Jun 06

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Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

13 APPLICATION INFORMATION

handbook, full pagewidth

TEA1201TS

DC/DC

V

out_dcdc

UPCONVERTER

SWITCH

out_switched

LOW BATTERY

DETECTOR

low-batt

Equivalent block diagram

D1

R

L1

lim

LX1

LX2

ILIM

5

1

UPOUT/DNIN

16

4

3

V

out_dcdc

C1

V

R1

R2

ref

11

FB0

12

C2

C5

LBI1

9

TEA1201TS

U/D

15

10

14

2

OUT1

FB1

6

7

V

out_switched

LBO

low-batt

switch_on

SYNC/PWM

SHDWN0

8

13

GND0

GND

R7

MGW790

Fig.6 1-cell NiCd or NiMH battery powered equipment.

14

2002 Jun 06

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

handbook, full pagewidth

TEA1201TS

DC/DC

V

out_dcdc

UPCONVERTER

SWITCH

out_switched

LOW BATTERY

DETECTOR

low-batt

Equivalent block diagram

D1

R

L1

lim

LX1

LX2

ILIM

5

1

UPOUT/DNIN

16

4

3

V

out_dcdc

C1

V

R1

R2

ref

11

FB0

12

C2

C5

R8

R9

LBI1

9

TEA1201TS

U/D

15

10

14

2

OUT1

FB1

6

7

V

out_switched

LBO

low-batt

switch_on

SYNC/PWM

SHDWN0

8

13

GND0

GND

R7

MGW791

Fig.7 2-cell NiCd or NiMH battery powered equipment with autonomous shut-down at low battery voltage.

2002 Jun 06

15

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

handbook, full pagewidth

TEA1201TS

DC/DC

V

out_dcdc

DOWNCONVERTER

SWITCH

out_switched

LOW BATTERY

DETECTOR

low-batt

Equivalent block diagram

UPOUT/DNIN

R

LX1

LX2

1

4

3

L1

16

V

C1

out_dcdc

lim

ILIM

5

D1

C2

R1

R2

U/D

15

FB0

R8

R9

12

LBI1

9

R7

V

TEA1201TS

ref

11

C5

OUT1

FB1

6

7

V

out_switched

LBO

low-batt

10

14

2

switch_on

SYNC/PWM

SHDWN0

8

13

GND0

GND

MGW792

Fig.8 3-cell NiCd or NiMH and 1-cell Li-Ion battery powered equipment.

16

2002 Jun 06

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

13.1 External component selection

13.1.6 CURRENT LIMITING RESISTOR R10

13.1.1 INDUCTOR L1

The maximum instantaneous current is set by the external

resistor R10. The preferred type is SMD with

1% tolerance.

The performance of the TEA1201TS is not very sensitive

to inductance value. The best efficiency performance over

a wide load current range is achieved by using an

inductance of 6.8 µH for example TDK SLF7032 or

Coilcraft DO1608 range.

The connection of resistor R10 differs for each mode:

• At upconversion: resistor R10 must be connected

between pins ILIM and UPOUT/DNIN; the current

320

R10

limiting level is defined by: I _Iim

=

----------

13.1.2 DC-TO-DC CONVERTER INPUT CAPACITOR C1

The value of C1 strongly depends on the type of input

source. In general, a 100 µF tantalum capacitor is

sufficient.

• At downconversion: resistor R10 must be connected

between pins ILIM and GND0; the current limiting level

300

R10

is defined by: I _Iim

=

----------

13.1.3 DC-TO-DC CONVERTER OUTPUT CAPACITOR C2

The average inductor current during limited current

operation also depends on the inductance value, input

voltage, output voltage and resistive losses in all

components in the power path. Ensure that

The value and type of C2 depends on the maximum output

current and the ripple voltage which is allowed in the

application. Low-ESR tantalum capacitors show good

results. The most important specification of C2 is its ESR,

which mainly determines output voltage ripple.

I

_lim< I_sat(saturation current) of the inductor.

13.1.7 REFERENCE VOLTAGE DECOUPLING CAPACITOR C5

13.1.4 DIODE D1

Optionally, a decoupling capacitor can be connected

between pin V_refand ground in order to achieve a lower

noise level of the output voltages of the LDO. The best

choice for C5 is a ceramic multilayer capacitor of

approximately 10 nF.

The Schottky diode is only used for a short time during

takeover from N-type power MOSFET and P-type power

MOSFET and vice versa. Therefore, a medium-power

diode is sufficient in most applications, for example a

Philips PRLL5819.

13.1.8 LOW BATTERY DETECTOR COMPONENTS

R7, R8 AND R9

13.1.5 FEEDBACK RESISTORS R1 AND R2

The output voltage of the DC-to-DC converter is

determined by the resistors R1 and R2. The following

conditions apply:

Resistor R7 is connected between pin LBO and the input

or output pin and must be 330 kΩ or higher.

A 1-cell NiCd or NiMH battery can be connected directly to

pin LBI1.

• Use SMD type resistors only with a tolerance of 1%.

If larger body resistors are used, the capacitance on

pin FB0 will be too large, causing inaccurate operation.

A higher battery voltage can be detected by application of

a divider circuit with resistors R8 and R9. The low-battery

detection level for a higher battery voltage can be set by

using the formula:

• Resistors R1 and R2 should have a maximum value of

50 kΩ when connected in parallel. A higher value will

result in inaccurate operation.

Under these conditions, the output voltage can be

calculated by the formula:

R9

R8 + R9

V _LBI1(det)= V_det

×

----------------------

R1

R2

Since current flows into the LBI1 pin, the parallel

impedance of R8 and R9 must be about 1 kΩ in order to

avoid inaccuracy due to the spread of the LBI1 current.

V_O= V_ref× 1 +

-------

2002 Jun 06

17

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

MGU577

100

handbook, full pagewidth

η

(%)

(1)

(2)

80

60

40

2

3

1

10

I

(mA)

L

(1) V_I= 2.4 V

(2) V_I= 1.2 V

V_O= 3.5 V

Fig.9 Efficiency as a function of load current.

2002 Jun 06

18

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

14 PACKAGE OUTLINE

SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm

SOT369-1

D

E

A

X

c

y

H

v

M

A

E

Z

9

16

Q

A

2

A

(A )

3

A

1

pin 1 index

θ

L

p

L

1

8

detail X

w

M

b

p

e

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

A

(1)

UNIT

A

b

c

D

E

e

H

L

p

Q

v

w

y

Z

θ

1

2

3

p

E

max.

10^o

0^o

0.15

0.00

1.4

1.2

0.32

0.20

0.25

0.13

5.30

5.10

4.5

4.3

6.6

6.2

0.75

0.45

0.65

0.45

0.48

0.18

mm

1.0

1.5

0.65

0.25

0.2

0.13

0.1

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

95-02-04

99-12-27

SOT369-1

MO-152

2002 Jun 06

19

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

15 SOLDERING

If wave soldering is used the following conditions must be

observed for optimal results:

15.1 Introduction to soldering surface mount

packages

• Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our “Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

• For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for

certain surface mount ICs, but it is not suitable for fine pitch

SMDs. In these situations reflow soldering is

recommended.

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

The footprint must incorporate solder thieves at the

downstream end.

15.2 Reﬂow soldering

• For packages with leads on four sides, the footprint must

be placed at a 45° angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Several methods exist for reflowing; for example,

convection or convection/infrared heating in a conveyor

type oven. Throughput times (preheating, soldering and

cooling) vary between 100 and 200 seconds depending

on heating method.

Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Typical reflow peak temperatures range from

215 to 250 °C. The top-surface temperature of the

packages should preferable be kept below 220 °C for

thick/large packages, and below 235 °C for small/thin

packages.

15.4 Manual soldering

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C.

15.3 Wave soldering

Conventional single wave soldering is not recommended

for surface mount devices (SMDs) or printed-circuit boards

with a high component density, as solder bridging and

non-wetting can present major problems.

When using a dedicated tool, all other leads can be

soldered in one operation within 2 to 5 seconds between

270 and 320 °C.

To overcome these problems the double-wave soldering

method was specifically developed.

2002 Jun 06

20

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

15.5 Suitability of surface mount IC packages for wave and reﬂow soldering methods

SOLDERING METHOD

PACKAGE

WAVE

not suitable

REFLOW⁽¹⁾

BGA, HBGA, LFBGA, SQFP, TFBGA

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS

PLCC⁽³⁾, SO, SOJ

suitable

not suitable⁽²⁾

suitable

LQFP, QFP, TQFP

not recommended⁽³⁾⁽⁴⁾suitable

not recommended⁽⁵⁾

suitable

SSOP, TSSOP, VSO

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.

2. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder

cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,

the solder might be deposited on the heatsink surface.

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2002 Jun 06

21

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

16 DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS⁽¹⁾

STATUS⁽²⁾

DEFINITIONS

Objective data

Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

17 DEFINITIONS

18 DISCLAIMERS

Short-form specification

The data in a short-form

Life support applications

These products are not

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

the use of any of these products, conveys no licence or title

under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

Application information

Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

2002 Jun 06

22

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

NOTES

2002 Jun 06

23

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

SCA74

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

403502/01/pp24

Date of release: 2002 Jun 06

Document order number: 9397 750 09359


型号：	TEA1201TS
厂家：	NXP
描述：	0.95 V starting basic power unit 0.95 V开始基本动力单元稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管信息通信管理
文件：	总24页 (文件大小：109K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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