TEA1202 [NXP]
Battery power unit; 电池供电设备
NXP 
INTEGRATED CIRCUITS
DATA SHEET
TEA1202TS
Battery power unit
Objective specification
2000 Jun 08
File under Integrated Circuits, IC03
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
FEATURES
GENERAL DESCRIPTION
• Fully integrated battery power unit, including complete
DC/DC converter circuit, two Low DropOut voltage
regulators (LDOs) and a battery low detector
The TEA1202TS is a fully integrated battery power unit
including a high-efficiency DC/DC converter which runs
from a 1-cell NiCd or NiMH battery, two low dropout
voltage regulators and a low battery detector. The circuit
can be arranged in many ways to optimize the application
circuit of a power supply system. Therefore, most inputs
and outputs are separated, the DC/DC converter can be
arranged for upconversion or downconversion and the
regulators can also be used as power switches. One
regulator can be used completely independent of the rest
of the system, and the low battery detector can be
configured for several types of batteries. Accurate low
battery detection is possible while all other blocks are
switched off.
• Configurable for 1, 2 or 3-cell Nickel-Cadmium (NiCd)
or Nickel Metal Hybrid (NiMH) batteries and 1 Lithium
Ion (Li-Ion) battery
• Guaranteed DC/DC converter start-up from 1-cell NiCd
or NiMH battery, even with an load current
• Upconversion or downconversion
• Internal power MOSFETs featuring a low RDSon of
approximately 0.1 Ω
• Synchronous rectification for high efficiency
• Soft start
The DC/DC converter features efficient, compact and
dynamic power conversion using a digital control concept
comparable with Pulse Width Modulation (PWM) and
Pulse Frequency Modulation (PFM), integrated CMOS
power switches with a very low RDSon and fully
synchronous rectification.
• PWM-only operating option
• Dropout voltage of 75 mV at 50 mA
• Both LDOs are also applicable as low-ohmic power
switches
• Stable LDO performance with ceramic capacitors
The device operates at a switching frequency of 600 kHz
which enables the use of external components with
minimum size. The switching frequency can be
synchronized to an external high frequency clock signal.
Optionally, the device can be kept in PWM control mode
only. Deadlock is prevented by an on-chip undervoltage
lockout circuit.
• Stand-alone low battery detector requires no additional
supply voltage
• Low battery detection level at 0.90 V, externally
adjustable to a higher level
• Adjustable output voltages
• Shut-down function
• Small outline package
Active current limiting enables efficient conversion in
pulsed-load systems such as Global System for Mobile
communication (GSM) and Digital Enhanced Cordless
Telecommunications (DECT).
• Advanced 0.6 µm BICMOS process.
APPLICATIONS
Both LDOs show a low dropout voltage and are inherently
stable, even when ceramic capacitors with a low ESR
value are applied at the outputs. Usage of the LDOs as
low-ohmic switches is also possible.
• Cellular phones
• Cordless phones
• Personal Digital Assistants (PDAs)
• Portable Audio Players
• Pagers
The low battery detector has a built-in detection level
which is optimum for a 1-cell NiCd or NiMH battery. Higher
battery voltages can be translated to this 1-cell level by an
additional built-in LDO circuit.
• Mobile equipment.
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
plastic shrink small outline package; 20 leads; body width 4.4 mm
VERSION
TEA1202TS
SSOP20
SOT266-1
2000 Jun 08
2
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC/DC converter
UPCONVERSION
VI(up)
input voltage
VI(start)
VO(uvlo)
0.93
−
−
5.50
V
V
V
VO(up)
VI(start)
output voltage
5.50
1.00
start-up input voltage
IL < 10 mA
0.96
DOWNCONVERSION
VI(dwn)
input voltage
output voltage
VO(uvlo)
1.30
−
−
5.50
5.50
V
V
VO(dwn)
CURRENT LEVELS
Iq
quiescent current
current in shut-down mode
−
0
−
110
2
−
µA
µA
A
Ishdwn
ILX(max)
10
1.0
maximum continuous current at Tamb = 80 °C
−
pins LX1 and LX2
∆Ilim
current limit deviation
Ilim set to 1.0 A
upconversion
−12
−12
−
−
+12
+12
%
%
downconversion
POWER MOSFETS
RDSon(N) drain-to-source on-state
Tj = 27 °C
Tj = 27 °C
−
−
110
125
−
−
mΩ
mΩ
resistance NFET
RDSon(P)
drain-to-source on-state
resistance PFET
EFFICIENCY
η
efficiency upconversion
switching frequency
VI = 1.2 V; VO up to 3.3 V
IL = 1 mA
−
−
−
66
81
85
−
−
−
%
%
%
IL = 10 mA
IL = 100 mA
TIMING
fsw
PWM mode
480
6
600
13
720
20
kHz
fi(sync)
synchronization clock input
frequency
MHz
tstart
start-up time
−
10
−
ms
Low dropout voltage regulators
VLDO
output voltage range
dropout voltage
VLDO < V4 + 0.4 V
ILDO = 50 mA
1.30
−
5.50
75
−
V
Vdropout
ILDO(max)
RDSon
−
−
−
−
mV
mA
mΩ
maximum output current
in regulation
50
200
drain-to-source on-state
resistance
VFB1,2 > 2 V; Tj = 27 °C
−
General characteristics
Vref
reference voltage
1.165
1.190
1.215
V
2000 Jun 08
3
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3
SHDWN2
11
IN2
12
V
LBI2
LBI1
ref
10
9
OUT2
FB2
LDO2
13
TEA1202TS
SHDWN0
LOW BATTERY
DETECTOR
V
ref
6
7
OUT1
FB1
LDO1
14
1
LBO
LX1
P-type POWER FET
4
UPOUT/DNIN
20
5
LX2
ILIM
INTERNAL
SUPPLY
sense FET
8
GND
START-UP
CIRCUIT
16
V
ref
CONTROL LOGIC
AND
MODE GEARBOX
FB0
CURRENT LIMIT
COMPARATOR
V
ref
N-type
POWER
FET
TEMPERATURE
PROTECTION
15
REFERENCE
VOLTAGE
V
TIME
COUNTER
ref
sense
FET
13 MHz
OSCILLATOR
SYNC
GATE
DIGITAL CONTROLLER
17
18
2
19
MGU062
GND0
SYNC/PWM SHDWN0 U/D
ahdnbok,uflapegwidt
Fig.1 Block diagram.
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
PINNING
SYMBOL
LX1
PIN
DESCRIPTION
1
2
3
4
inductor connection 1
DC/DC shut-down input
LDO2 shut-down input
SHDWN0
SHDWN2
UPOUT/DNIN
up mode: DC/DC output;
down mode DC/DC input
handbook, halfpage
LX1
1
2
3
4
5
6
7
8
9
20 LX2
ILIM
5
current limiting resistor
connection
SHDWN0
SHDWN2
UPOUT/DNIN
ILIM
19 U/D
18 SYNC/PWM
17 GND0
16 FB0
OUT1
FB1
6
7
8
9
LDO1 output
LDO1 feedback input
internal supply ground
LDO2 feedback input
GND
FB2
TEA1202TS
OUT1
15 V
ref
OUT2
IN2
10 LDO2 output
FB1
14 LBO
13 LBI1
12 LBI2
11 IN2
11 LDO2 input
GND
LBI2
12 low battery detector input 2
13 low battery detector input 1
14 low battery detector output
15 reference voltage
FB2
LBI1
OUT2 10
LBO
Vref
MGU060
FB0
16 DC/DC feedback input
17 DC/DC converter ground
GND0
SYNC/PWM
18 synchronization clock input or
PWM-only selection input
U/D
LX2
19 conversion mode selection input
20 inductor connection 2
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
Control mechanism
When the output voltage reaches one of the window
borders, the digital controller immediately reacts by
adjusting the pulse width and inserting a current step in
such a way that the output voltage stays within the window
with higher or lower current capability. This approach
enables very fast reaction to load variations. Figure 3
shows the response of the converter to a sudden load
increase. The upper trace shows the output voltage.
The TEA1202TS DC/DC converter is able to operate in
PFM (discontinuous conduction) or PWM (continuous
conduction) operating mode. All switching actions are
completely determined by a digital control circuit which
uses the output voltage level as its control input. This novel
digital approach enables the use of a new pulse width and
frequency modulation scheme, which ensures optimum
power efficiency over the complete range of operation of
the converter.
The ripple on top of the DC level is a result of the current
in the output capacitor, which changes in sign twice per
cycle, times the internal Equivalent Series Resistance
(ESR) of the capacitor. After each ramp-down of the
inductor current, i.e. when the ESR effect increases the
output voltage, the converter determines what to do in the
next cycle. As soon as more load current is taken from the
output the output voltage starts to decay.
When high output power is requested, the device will
operate in PWM (continuous conduction) operating mode.
This results in minimum AC currents in the circuit
components and hence optimum efficiency, minimum
costs and low EMC. In this operating mode, the output
voltage is allowed to vary between two predefined voltage
levels. As long as the output voltage stays within this
so-called window, switching continues in a fixed pattern.
2000 Jun 08
5
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
load increase
start corrective action
V
o
high window limit
low window limit
time
I
L
MGK925
time
Fig.3 Response to load increase.
V
h
2%
V
h
+2%
V
l
V
2%
O
V
h
−2%
V
l
2%
V
l
maximum
maximum
typical
positive spread
negative spread
situation
MGU061
Fig.4 Output voltage window spread.
6
2000 Jun 08
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
When the output voltage becomes lower than the low limit
of the window, a corrective action is taken by a ramp-up of
the inductor current during a much longer time. As a result,
the DC current level is increased and normal PWM control
can continue. The output voltage (including ESR effect) is
again within the predefined window.
Undervoltage lockout
As a result of too high a load or disconnection of the input
power source, the output voltage can drop so low that
normal regulation cannot be guaranteed. In this event, the
device switches back to start-up mode. If the output
voltage drops even further, switching is stopped
completely.
Figure 4 shows the spread of the output voltage window.
The absolute value is mostly dependent on spread, while
the actual window size (Vh − Vl) is not affected. For one
specific device, the output voltage will not vary more
than 2% (typical value).
Shut-down
When the shut-down input is set HIGH, the DC/DC
converter disables both switches and power consumption
is reduced to a few microamperes.
In low output power situations, the TEA1202TS will switch
over to PFM (discontinuous conduction) operating mode.
In this mode, regulation information from an earlier PWM
operating mode is used. This results in optimum inductor
peak current levels in the PFM mode, which are slightly
larger than the inductor ripple current in the PWM mode.
As a result, the transition between PFM and PWM mode is
optimum under all circumstances. In the PFM mode the
TEA1202TS regulates the output voltage to the high
window limit as shown in Fig.3.
Power switches
The power switches in the IC are one N-type and one
P-type power MOSFET, both having a typical
drain-to-source resistance of 100 mΩ. The maximum
average current in the power switches is 1.0 A at
Tamb = 80 °C.
Temperature protection
Synchronous rectification
When the DC/DC converter operates in the PWM mode,
and the die temperature gets too high (typical value is
160 °C), the converter and both LDOs stop operating.
They resume operation when the die temperature falls
below 90 °C again. As a result, low frequent cycling
between the on and off state will occur. It should be noted
that in the event of device temperatures at the cut-off limit,
the application differs strongly from maximum
specifications.
For optimum efficiency over the whole load range,
synchronous rectifiers inside the TEA1202TS ensure that
during the whole second switching phase, all inductor
current will flow through the low-ohmic power MOSFETs.
Special circuitry is included which detects when the
inductor current reaches zero. Following this detection, the
digital controller switches off the power MOSFET and
proceeds with regulation.
Current limiters
Start-up
If the current in one of the power switches exceeds the
programmed limit in the PWM mode, the current ramp is
stopped immediately and the next switching phase is
entered. Current limiting is required to keep power
conversion efficient during temporary high loads.
Furthermore, current limiting protects the IC against
overload conditions, inductor saturation, etc.
Start-up from low input voltage in the boost mode is
realized by an independent start-up oscillator, which starts
switching the N-type power MOSFET as soon as the
low-battery detector detects a sufficiently high voltage.
The inductor current is limited internally to ensure
soft-starting. The switch actions of the start-up oscillator
will increase the output voltage. As soon as the output
voltage is high enough for normal regulation, the digital
control system takes control over the power MOSFETs.
The current limiting level is set by an external resistor
which must be connected between pin ILIM and ground for
downconversion, or between pins ILIM and UPOUT/DNIN
for upconversion.
2000 Jun 08
7
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
External synchronization and PWM-only mode
Both LDOs are protected from overload conditions by a
current limiting circuit and high temperature
(see Section “Temperature protection”).
If an external high-frequency clock or a HIGH level is
applied to pin SYNC/PWM, the TEA1202TS will use PWM
regulation independent of the load applied.
Next to normal LDO functions, both regulators can be
switched off or can be used as switches. Each regulator
will act as a low-ohmic switch in the on-state when its
feedback input is connected to ground. When the
feedback input is higher than 2 V, the regulator will make
its power FET high-ohmic. So the feedback inputs of the
regulators can be used as digital inputs which make the
LDOs behave as switches.
In the event a high-frequency clock is applied, the
switching frequency in the PWM mode will be exactly that
frequency divided by 22. In the PWM mode the quiescent
current of the device increases.
In the event that no external synchronization or PWM
mode selection is necessary, pin SYNC/PWM must be
connected to ground.
Low battery detector
Behaviour at input voltage exceeding the specified
range
The low battery detector is an autonomous circuit which
can work at an input voltage down to 0.90 V. It is always
on, even when all other blocks are in the shut-down mode.
In general, an input voltage exceeding the specified range
is not recommended since instability may occur. There are
two exceptions:
The detector has two inputs: the input on pin LBI1 is tuned
to accept a 1-cell NiCd or NiMH battery voltage directly,
while the input on pin LBI2 can detect a 2-cell NiCd or
NiMH battery voltage or higher voltage. The detection level
of the input on pin LBI2 can be set by using a voltage
divider between the battery voltage, pin LBI2 and ground.
Hysteresis is included for proper operating. Furthermore, a
capacitor of 10 µF (typical value) must be connected
between pin LBI1 and ground when the input on pin LBI2
is used.
1. Upconversion: at an input voltage higher than the
target output voltage, but up to 5.5 V, the converter will
stop switching and the external Schottky diode will
take over. The output voltage will equal the input
voltage minus the diode voltage drop. Since all current
flows through the external diode in this situation, the
current limiting function is not active.
In the PWM mode, the P-type power MOSFET is
always on when the input voltage exceeds the target
output voltage. The internal synchronous rectifier
ensures that the inductor current does not fall below
zero. As a result, the achieved efficiency is higher in
this situation than standard PWM-controlled
converters achieve.
The output of the low battery detector on pin LBO is an
open-collector output. The output is high (i.e. no current is
sunk by the collector) when the input voltage of the
detector is below the lower detection level.
2. Downconversion: when the input voltage is lower than
the target output voltage, but higher than 2.2 V, the
P-type power MOSFET will stay conducting resulting
in an output voltage being equal to the input voltage
minus some resistive voltage drop. The current limiting
function remains active.
Low dropout voltage regulators
The low dropout voltage regulators are functionally equal
apart from the shut-down mechanism: LDO2 can be
controlled separately by pin SHDWN2, while LDO1 is
controlled by pin SHDWN0 like the DC/DC converter.
The input voltage of each LDO must be 250 mV higher
than its output voltage to achieve full specification on e.g.
ripple rejection. However, the parts will function like an
LDO down to a margin of 75 mV between input and output:
the so-called dropout voltage. At a lower margin between
input and output, the LDOs will behave like a resistor.
2000 Jun 08
8
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Vn
PARAMETER
voltage on any pin
CONDITIONS
shut-down mode
MIN.
−0.2
MAX.
+6.5
UNIT
V
V
operating mode
−0.2
−40
−20
−40
+5.5
+150
+80
Tj
junction temperature
°C
°C
°C
V
Tamb
Tstg
Ves
ambient temperature
storage temperature
+125
electrostatic handling voltage
notes 1 and 2
Class II
Note
1. ESD specification is in accordance with the JEDEC standard:
a) Human Body Model (HBM) tests are carried out by discharging a 100 pF capacitor through a 1.5 kΩ series
resistor.
b) Machine Model (MM) tests are carried out by discharging a 200 pF capacitor via a 0.75 µH series inductor.
2. Exception is pin ILIM: 1000 V HBM and 100 V MM.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient in free air
140
K/W
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611 part E”.
2000 Jun 08
9
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
CHARACTERISTICS
Tamb = −20 to +80 °C; all voltages are measured with respect to ground; positive currents flow into the IC; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC/DC converter
UPCONVERSION; pin U/D = LOW
VI(up)
input voltage
VI(start)
VO(uvlo)
0.93
−
−
5.50
V
V
V
V
VO(up)
VI(start)
VO(uvlo)
output voltage
5.50
1.00
2.4
start-up input voltage
undervoltage lockout voltage
IL < 10 mA
0.96
2.2
note 1
2.0
DOWNCONVERSION; pin U/D = HIGH
VI(dwn)
input voltage
note 2
VO(uvlo)
1.30
−
−
5.50
5.50
V
V
VO(dwn)
output voltage
REGULATION
∆VO(wdw)
output voltage window size as PWM mode
a function of output voltage
1.5
2.0
2.5
%
CURRENT LEVELS
Iq(DCDC)
Ishdwn
Ilim(max)
∆Ilim
quiescent current
note 3
−
0
−
110
2
−
µA
µA
A
current in shut-down mode
maximum current limit
current limit deviation
10
−
5
Ilim set to 1.0 A; note 4
upconversion
−12
−12
−
−
−
−
+12
+12
1.0
%
%
A
downconversion
ILX(max)
maximum continuous current Tamb = 80 °C
at pins LX1 and LX2
POWER MOSFETS
RDSon(N) drain-to-source on-state
Tj = 27 °C
Tj = 27 °C
−
−
110
125
−
−
mΩ
mΩ
resistance NFET
RDSon(P)
drain-to-source on-state
resistance PFET
EFFICIENCY
η
efficiency upconversion
VI = 1.2 V; VO up to 3.3 V;
note 5
IL = 1 mA
−
−
−
66
81
85
−
−
−
%
%
%
IL = 10 mA
IL = 100 mA
TIMING
fsw
switching frequency
PWM mode
480
6
600
13
720
20
kHz
fi(sync)
synchronization clock input
frequency
MHz
tstart
start-up time
note 6
−
10
−
ms
2000 Jun 08
10
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DIGITAL INPUT LEVELS
VlL(n)
LOW-level input voltage on all
0
−
0.4
V
digital pins
VIH(n)
HIGH-level input voltage
note 7
on pins SYNC/PWM,
SHDWN0 and SHDWN2
0.55V4
−
−
V4 + 0.3 V
V4 + 0.3 V
all other digital input pins
V4 − 0.4
Low dropout voltage regulators; note 8
VLDO
output voltage range
dropout voltage
VLDO < V4 + 0.4 V
ILDO = 50 mA; note 9
ILDO = 50 mA
1.30
−
−
−
−
5.50
75
−
V
Vdropout
Vdrop
mV
mV
minimum drop voltage for
functionality within
specification
250
ILDO(max)
∆VLDO
∆Vline
∆Vload
PSRR
tres
maximum output current
output voltage accuracy
line voltage regulation
load voltage regulation
power supply ripple rejection
response time
in regulation
−
50
−
−
mA
%
VI − VLDO = 2 V; ILDO = 10 µA −2.0
+2.0
VI − VLDO > Vdrop
10 µA < ILDO < 50 mA
note 10
−
−
1
1
−
−
mV
mV
dB
µs
−
−
25
−
−
after load step from no load to
ILDO(max)
200
Iq(LDO)
quiescent current
shut-down current
−
−
50
−
µA
µA
Ishdwn(LDO)
−
1
SWITCH CIRCUIT
RDSon
drain-to-source resistance in
VFB1,2 > 2 V; Tj = 27 °C
−
200
−
mΩ
switched-on state
IO(max)
maximum output current in
switched-on state
VFB1,2 > 2 V
0.40
0.45
0.50
A
Low battery detector
ILBD
supply current of detector
transition time
VI = 0.9 V
falling Vbat
−
−
20
2
−
−
µA
µs
tt(HL)
DETECTION INPUT PIN LBI1
Vdet
Vhys
low battery detection level
falling Vbat
0.88
36
0.90
40
0.92
44
V
low battery detection
hysteresis
mV
TCVdet
TCVhys
temperature coefficient of
detection level
−
−
0
−
−
mV/K
mV/K
temperature coefficient of
detection hysteresis
0.175
DETECTION OUTPUT PIN LB0
IO(sink)
output sink current
15
−
−
µA
2000 Jun 08
11
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
General characteristics
Vref
Iq
reference voltage
1.165
1.190
270
1.215
V
quiescent current at
pin UPOUT/DNIN
all blocks operating
−
−
µA
Tamb
Tmax
ambient temperature
−20
+25
160
+80
170
°C
°C
internal temperature for cut-off
150
Notes
1. The undervoltage lockout level shows wide specification limits since it decreases at increasing temperature. When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range. The undervoltage lockout level
is measured at pin UPOUT/DNIN.
2. When VI is lower than the target output voltage but higher than 2.2 V, the P-type power MOSFET will remain
conducting (duty factor is 100%), resulting in VO following VI.
3. The quiescent current is specified as the input current in the upconversion configuration at VI = 1.20 V and
VO = 3.30 V, using L1 = 6.8 µH, R1 = 150 kΩ and R2 = 91 kΩ.
4. The current limit is defined by resistor R10. This resistor must be 1% accurate.
5. The specified efficiency is valid when using an output capacitor having an ESR of 0.1 Ω and an inductor of 6.8 µH
with an ESR of 0.05 Ω and a sufficient saturation current level.
6. The specified start-up time is the time between the connection of a 1.20 V input voltage source and the moment the
output reaches 3.30 V. The output capacitance equals 100 µF, the inductance equals 6.8 µH and no load is present.
7. V4 is the voltage at pin UPOUT/DNIN. If the applied HIGH-level voltage is less than V4 − 1 V, the quiescent current
of the device will increase.
8. Specifications have been verified in the PFM mode.
9. The dropout voltage is defined as the voltage between the input and the output of the LDO when the output voltage
has dropped 100 mV below its nominal value. The dropout voltage is measured while the LDO input voltage is
decreasing and at maximum current.
10. Measured with a sine wave at fi = 100 Hz to 1 MHz, Vi = 100 mV (RMS) and ILDO = 10 mA.
2000 Jun 08
12
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
APPLICATION INFORMATION
DC/DC
output
DC/DC
UPCONVERTER
regulator 1
output
LDO1
LDO2
TEA1202TS
regulator 2
output
LOW BATTERY
DETECTOR
low battery
detection
equivalent block diagram
D1
L1
R10
ILIM
LX1
1
5
4
UPOUT/DNIN
DC/DC
output
LX2
IN2
20
11
C1
R1
FB0
C2
C3
C4
16
R2
LBI1
LBI2
LBO
U/D
13
R7
OUT1
regulator 1
output
12
14
19
6
7
low battery
detection
R3
FB1
TEA1202TS
R4
external
clock
SYNC/PWM
SHDWN0
18
DC/DC
shut-down
OUT2
regulator 2
output
2
10
SHDWN2
Vref
regulator 2
shut-down
R5
3
FB2
15
9
8
17
GND0
C5
R6
GND
MGU063
Fig.5 Application in 1-cell NiCd or NiMH battery powered equipment.
13
2000 Jun 08
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
DC/DC
output
DC/DC
UPCONVERTER
regulator 1
output
LDO1
LDO2
TEA1202TS
regulator 2
output
low battery
detection
LOW BATTERY
DETECTOR
equivalent block diagram
D1
L1
R10
ILIM
LX1
LX2
1
5
4
UPOUT/DNIN
DC/DC
output
20
11
13
IN2
C1
R1
LBI1
FB0
C2
C3
C4
16
C6
R8
R9
R2
LBI2
U/D
12
19
R7
OUT1
regulator 1
output
6
R3
TEA1202TS
LBO
low battery
detection
FB1
14
7
R4
external
clock
SYNC/PWM
SHDWN0
18
2
DC/DC
shut-down
OUT2
regulator 2
output
10
9
SHDWN2
Vref
regulator 2
shut-down
R5
3
FB2
15
8
17
GND0
C5
R6
GND
MGU064
Fig.6 Application in 2-cell NiCd or NiMH battery powered equipment.
14
2000 Jun 08
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
control
regulator 1 switch
DC/DC
output
DC/DC
UPCONVERTER
output
regulator 1
switch
SWITCH
LDO1
TEA1202TS
regulator 2
output
LDO2
LOW BATTERY
DETECTOR
low battery
detection
equivalent block diagram
D1
L1
R10
ILIM
LX1
LX2
1
5
4
UPOUT/DNIN
DC/DC
output
20
11
13
IN2
C1
R1
LBI1
FB0
C2
16
C6
R8
R9
R2
LBI2
U/D
12
R7
TEA1202TS
19
output
OUT1
FB1
regulator 1
switch
6
7
LBO
low battery
detection
14
control
regulator 1
switch
external
clock
SYNC/PWM
SHDWN0
18
2
OUT2
regulator 2
output
10
9
SHDWN2
Vref
R5
3
FB2
15
C4
8
17
GND0
C5
R6
GND
MGU065
Fig.7 Application in 2-cell NiCd or NiMH battery powered equipment with autonomous shut-down at low battery
voltage and using LDO1 as a switch.
2000 Jun 08
15
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
DC/DC
output
DC/DC
DOWNCONVERTER
regulator 1
output
LDO1
LDO2
TEA1202TS
regulator 2
output
LOW BATTERY
DETECTOR
low battery
detection
equivalent block diagram
R10
ILIM
LX2
LX1
5
UPOUT/DNIN
4
20
1
L1
D1
DC/DC
output
IN2
11
13
C1
LBI1
R1
R2
C6
FB0
C2
C3
C4
16
R8
R9
LBI2
U/D
12
19
R7
OUT1
FB1
regulator 1
output
6
TEA1202TS
R3
R4
LBO
low battery
detection
7
14
SYNC/PWM
SHDWN0
external
clock
18
2
DC/DC
shut-down
OUT2
FB2
regulator 2
output
10
9
SHDWN2
Vref
regulator 2
shut-down
R5
R6
3
15
8
17
GND0
C5
GND
MGU066
Fig.8 Application in 3-cell NiCd or NiMH and 1-cell Li-Ion battery powered equipment.
16
2000 Jun 08
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
External component selection
CURRENT LIMITING RESISTOR R10
INDUCTOR L1
The maximum instantaneous current is set by the external
resistor R10. The preferred type is SMD, 1% accurate.
The performance of the TEA1202TS is not very sensitive
to inductance value. The best efficiency performance over
a wide load current range is achieved by using an
inductance of 6.8 µH e.g. TDK SLF7032 or Coilcraft
DO1608 range.
The connection of resistor R10 differs for each mode:
• At upconversion: resistor R10 must be connected
between pins ILIM and UPOUT/DNIN; the current
320
R10
limiting level is defined by: I Iim
=
----------
DC/DC INPUT CAPACITOR C1
• At downconversion: resistor R10 must be connected
between pins ILIM and GND0; the current limiting level
The value of C1 strongly depends on the type of input
source. In general, a 100 µF tantalum capacitor is
sufficient.
300
R10
is defined by: I Iim
=
----------
DC/DC OUTPUT CAPACITOR C2
The average inductor current during limited current
operation also depends on the inductance value, input
voltage, output voltage and resistive losses in all
components in the power path. Ensure that
The value and type of C2 depends on the maximum output
current and the ripple voltage which is allowed in the
application. Low-ESR tantalum capacitors show good
results. The most important specification of C2 is its ESR,
which mainly determines output voltage ripple.
I
lim < Isat (saturation current) of the inductor.
REFERENCE VOLTAGE DECOUPLING CAPACITOR C5
DIODE D1
Optionally, a decoupling capacitor can be connected
between pin Vref and ground in order to achieve a lower
noise level of the output voltages of the LDO. The best
choice for C5 is a ceramic multilayer capacitor of
approximately 100 nF.
The Schottky diode is only used for short time during
takeover from N-type power MOSFET and P-type power
MOSFET and vice versa. Therefore, a medium-power
diode is sufficient in most applications e.g. Philips
PRLL5819.
LDO OUTPUT CAPACITORS C3 AND C4
FEEDBACK RESISTORS R1 AND R2
A typical LDO output capacitor is a ceramic multilayer
capacitor of 2.2 µF, e.g. GRM40X5R225K6.3 of Murata.
The ESR of the output capacitor must be between
10 and 100 mΩ to achieve stability and the specified
transient response.
The output voltage of the DC/DC converter is determined
by the resistors R1 and R2. The following conditions
apply:
• Use a 1% accurate SMD type resistors only. If larger
body resistors are used, the capacitance on pin FB0 will
be too large, causing inaccurate operation.
• Resistors R1 and R2 should have a maximum value of
50 kΩ when connected in parallel. A higher value will
result in inaccurate operation.
Under these conditions, the output voltage can be
calculated by the formula:
R1
R2
VO = Vref × 1 +
-------
2000 Jun 08
17
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
LDO FEEDBACK RESISTORS R3, R4, R5 AND R6
LOW BATTERY DETECTOR COMPONENTS R7, R8, R9 AND C6
The output voltage of each LDO can be set by the external
feedback resistors. Their values can be derived from the
formulae:
Resistor R7 is connected between pin LBO and the input
or output pin and must be 330 kΩ or higher.
A 1-cell NiCd or NiMH battery can be connected directly to
pin LBI1.
R3
VO = Vref × 1 +
V O = V ref × 1 +
-------
R4
A higher battery voltage must be applied to pin LBI2 using
a divider circuit with resistor R8 and R9. In that situation,
capacitor C6 (10 µF) must be connected between pin LBI1
and ground. The low-battery detection level for a higher
battery voltage can be set by the resistors at pin LBI2
using the formula:
R5
-------
R6
The maximum value for each of the LDO feedback
resistors is 500 kΩ.
R8
R9
V LBI2 = 0.90 × 1 +
-------
2000 Jun 08
18
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
D
E
A
X
c
y
H
v
M
A
E
Z
11
20
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
10o
0o
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
6.6
6.2
0.75
0.45
0.65
0.45
0.48
0.18
mm
1.5
0.65
1.0
0.2
0.25
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-22
99-12-27
SOT266-1
MO-152
2000 Jun 08
19
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Jun 08
20
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
BGA, LFBGA, SQFP, TFBGA
WAVE
not suitable
REFLOW(1)
suitable
suitable
suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
PLCC(3), SO, SOJ
not suitable(2)
suitable
LQFP, QFP, TQFP
not recommended(3)(4) suitable
not recommended(5)
suitable
SSOP, TSSOP, VSO
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2000 Jun 08
21
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Jun 08
22
Philips Semiconductors
Objective specification
Battery power unit
TEA1202TS
NOTES
2000 Jun 08
23
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
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Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Brazil: see South America
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
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Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
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Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
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For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403502/25/01/pp24
Date of release: 2000 Jun 08
Document order number: 9397 750 06773
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NXP
TEA1204TD-T
IC 3.2 A SWITCHING REGULATOR, 240 kHz SWITCHING FREQ-MAX, PDSO8, 3.90 MM, PLASTIC, MS-012AA, SOT-96-1, SOP-8, Switching Regulator or Controller
NXP
TEA1206TD-T
Switching Regulator/Controller, Voltage-mode, 645kHz Switching Freq-Max, CMOS, PDSO8,
PHILIPS
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