MRF6VP3091NR5 [NXP]
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270, ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN;
| 型号： | MRF6VP3091NR5 |
| 厂家： | 
NXP |
| 描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270, ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN 局域网 放大器 光电二极管 晶体管 |
| 文件： | 总20页 (文件大小：1092K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6VP3091N
Rev. 1, 12/2011
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3091NBR1
MRF6VP3091NBR5
Enhancement--Mode Lateral MOSFETs
Designed for commercial and industrial broadband applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
•
Typical Performance (Broadband Reference Circuit): VDD = 50 Volts,
DQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
I
Output
Signal PAR Shoulder
IMD
470--860 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
P
f
G
η
D
out
ps
Signal Type
(W)
(MHz) (dB)
(%)
31.0
26.4
27.6
(dB)
7.9
(dBc)
--27.8
--37.6
--30.4
DVB--T (8k OFDM) 18 Avg.
470
650
860
21.8
21.6
21.7
8.4
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
7.1
PLASTIC
MRF6VP3091NR1(NR5)
Features
•
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
•
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Input Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Excellent Thermal Stability
Device can be used Single--Ended or in a Push--Pull Configuration
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6VP3091NBR1(NBR5)
PARTS ARE PUSH--PULL
•
•
225°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Gate 1
Gate 2
Drain 1
Drain 2
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +115
--6.0, +10
--65 to +150
150
Unit
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
(Top View)
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
Note: Exposed backside of the package is
the source terminal for the transistor.
T
C
°C
Figure 1. Pin Connections
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Case Temperature 76°C, 18 W CW, 50 Vdc, I
Case Temperature 80°C, 90 W CW, 50 Vdc, I = 350 mA, 860 MHz
= 350 mA, 860 MHz
0.79
0.82
DQ
DQ
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2 (2001--4000 V)
B (201--400 V)
IV (>1000 V)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Off Characteristics
Gate--Source Leakage Current
I
—
115
—
—
—
—
—
0.5
—
μAdc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(I = 50 mA, V = 0 Vdc)
V
(BR)DSS
D
GS
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
I
10
20
μAdc
μAdc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
—
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(1)
Gate Threshold Voltage
(V = 10 Vdc, I = 100 μAdc)
V
0.9
2.0
—
1.6
2.7
0.2
2.4
3.5
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 350 mAdc, Measured in Functional Test)
V
DD
D
(1)
Drain--Source On--Voltage
(V = 10 Vdc, I = 0.25 Adc)
V
GS
D
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
C
—
—
—
41
—
—
—
pF
pF
pF
rss
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(2)
Output Capacitance
C
oss
65.4
591
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(2)
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Single--Ended Narrowband Test Fixture, 50 ohm system) V = 50 Vdc, I = 350 mA, P = 18 W Avg.,
DD
DQ
out
f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
G
21.0
27.5
—
22.0
28.5
--62.0
-- 1 4
24.0
—
dB
%
ps
D
Drain Efficiency
η
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
--60.0
-- 9
dBc
dB
—
1. Each side of device measured separately.
2. Part internally input matched.
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
2
V
SUPPLY
V
BIAS
+
+
C8
C9
C10
R1
C1
C2
C3
Z8
Z10
Z9
C4 R2
Z6
RF
OUTPUT
RF
INPUT
Z12 Z13
Z14
Z15 Z16
Z17
Z18
Z1
Z2
Z3 Z4 Z5
Z7
DUT
C5
C14
C6
C7
C15 C11
C12
C13
Z11
+
C16
C17
C18
Z1
0.266″ × 0.067″ Microstrip
0.331″ × 0.067″ Microstrip
0.598″ × 0.067″ Microstrip
0.315″ × 0.276″ Microstrip
0.054″ × 0.669″ Microstrip
0.419″ × 0.669″ Microstrip
0.256″ × 0.669″ Microstrip
0.986″ × 0.071″ Microstrip
0.201″ × 0.571″ Microstrip
Z10, Z11
1.292″ × 0.079″ Microstrip
0.680″ × 0.571″ Microstrip
0.132″ × 0.117″ Microstrip
0.705″ × 0.117″ Microstrip
0.159″ × 0.117″ Microstrip
0.140″ × 0.067″ Microstrip
0.077″ × 0.067″ Microstrip
0.163″ × 0.067″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Figure 2. MRF6VP3091NR1(NBR1) 860 MHz Single--Ended Narrowband Test Circuit Schematic
Table 6. MRF6VP3091NR1(NBR1) 860 MHz Single--Ended Narrowband Test Circuit Component Designations and
Values
Part
Description
22 μF, 35 V Tantalum Capacitor
10 μF, 50 V Chip Capacitors
43 pF Chip Capacitors
Part Number
T491X226K035AT
Manufacturer
Kermet
C1
C2, C9, C17
GRM55DR61H106KA88L
ATC100B430JT500XT
ATC100B6R2BT500XT
ATC100B2R2JT500XT
ATC100B9R1CT500XT
EEVFK2A221M
Murata
ATC
C3, C5, C8, C14, C16
C4
6.2 pF Chip Capacitor
ATC
C6
2.2 pF Chip Capacitor
ATC
C7
9.1 pF Chip Capacitor
ATC
C10, C18
C11, C15
C12
220 μF, 100 V Electrolytic Capacitors
7.5 pF Chip Capacitors
Panasonic--ECG
ATC
ATC100B7R5CT500XT
ATC100B3R0CT500XT
ATC100B0R7BT500XT
CRCW120610KOJNEA
CRCW120610ROJNEA
RF--35
3.0 pF Chip Capacitor
ATC
C13
0.7 pF Chip Capacitor
ATC
R1
10 kΩ, 1/4 W Chip Resistor
10 Ω, 1/4 W Chip Resistor
Vishay
Vishay
Taconic
R2
PCB
0.030″, ε = 3.5
r
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
3
- -
C1
C10
C8
C9
R1
C2
C3
C4
C11
C14
C13
R2
C15
C5
C6
C12
C7
MRF6V3090N
Rev. 0
C16
C17
C18
-
Figure 3. MRF6VP3091NR1(NBR1) 860 MHz Single--Ended Narrowband Test Circuit Component Layout
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
1000
100
10
24
70
C
V
= 50 Vdc, I = 350 mA, f = 860 MHz
DQ
iss
DD
23
60
50
G
ps
22
21
40
C
C
oss
20
19
30
20
rss
η
D
18
17
10
0
Measured with ±30 mV(rms)ac @ 1 MHz, V = 0 Vdc
GS
0
10
20
30
40
50
1
10
100
200
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
P
, OUTPUT POWER (WATTS)
out
DS
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power (Single--Ended
Narrowband Test Circuit)
25
56
55
54
53
I
= 350 mA, f = 860 MHz
P3dB = 51.28 dBm (134.3 W)
P2dB = 51.06 dBm (127.6 W)
Ideal
DQ
24
23
22
21
20
19
P1dB = 50.7 dBm (117.5 W)
52
51
50
Actual
50 V
18
17
16
49
45 V
48
47
V
= 40 V
V
= 50 Vdc, I = 350 mA, f = 860 MHz
DQ
DD
DD
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
, OUTPUT POWER (WATTS)
-- 6 -- 5
-- 4
-- 3
-- 2
-- 1
0
1
2
3
4
P
P , INPUT POWER (dBm)
out
in
Figure 7. CW Power Gain versus Output Power
(Single--Ended Narrowband Test Circuit)
Figure 6. CW Output Power versus Input Power
(Single--Ended Narrowband Test Circuit)
25
70
T
= --30_C
V
= 50 Vdc, I = 350 mA, f = 860 MHz
DQ
C
DD
24
23
22
21
20
19
60
50
G
ps
85_C
25_C
T
= --30_C
C
40
30
20
10
85_C
25_C
η
D
18
0
200
1
10
, OUTPUT POWER (WATTS)
100
P
out
Figure 8. CW Power Gain and Drain Efficiency
versus Output Power versus Temperature
(Single--Ended Narrowband Test Circuit)
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — TWO--TONE (SINGLE--ENDED NARROWBAND TEST CIRCUIT)
-- 10
-- 20
V
= 50 Vdc, P = 90 W (PEP), I = 350 mA
out DQ
DD
V
= 50 Vdc, I = 350 mA, f1 = 854 MHz
DQ
DD
-- 25
f = 860 MHz, Two--Tone Measurements
-- 20
-- 30
-- 40
f2 = 860 MHz, Two--Tone Measurements
-- 30
-- 35
-- 40
-- 45
-- 50
3rd Order
3rd Order
5th Order
7th Order
5th Order
-- 50
-- 55
-- 60
-- 65
-- 60
-- 7 0
7th Order
100
1
10
200
1
10
90
P
, OUTPUT POWER (WATTS) PEP
out
TWO--TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Output Power
Figure 10. Intermodulation Distortion
Products versus Two--Tone Spacing
23.5
23
-- 10
V
= 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
DD
Two--Tone Measurements, 6 MHz Tone Spacing
-- 20
I
= 450 mA
DQ
22.5
22
-- 30
-- 40
-- 50
-- 60
350 mA
300 mA
250 mA
I
= 250 mA
DQ
21.5
21
300 mA
V
= 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
DD
20.5
20
Two--Tone Measurements, 6 MHz Tone Spacing
450 mA
350 mA
P
1
10
100
200
1
10
, OUTPUT POWER (WATTS) PEP
100
200
P
, OUTPUT POWER (WATTS) PEP
out
out
Figure 12. Third Order Intermodulation
Distortion versus Output Power
Figure 11. Two--Tone Power Gain versus
Output Power
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS — DVB--T (8k OFDM)
100
10
-- 20
-- 30
-- 40
7.61 MHz
1
-- 50
4 kHz BW
4 kHz BW
-- 60
-- 70
-- 80
-- 90
0.1
0.01
ACPR Measured at 4 MHz Offset
from Center Frequency
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
0.001
--100
-- 11 0
0.0001
0
2
4
6
8
10
12
-- 5
-- 4
-- 3
-- 2
-- 1
0
1
2
3
4
5
PEAK--TO--AVERAGE (dB)
f, FREQUENCY (MHz)
Figure 13. Single--Carrier DVB--T (8k OFDM)
Figure 14. DVB--T (8k OFDM) Spectrum
23
-- 5 4
V
= 50 Vdc, f = 860 MHz
DD
I
= 450 mA
DQ
DVB--T (8k OFDM), 64 QAM
Data Carrier Modulation, 5 Symbols
-- 5 6
-- 5 8
-- 6 0
22.5
22
350 mA
300 mA
I
= 250 mA
300 mA
DQ
-- 6 2
21.5
21
250 mA
-- 6 4
-- 6 6
-- 6 8
V
= 50 Vdc, f = 860 MHz
350 mA
450 mA
DD
DVB--T (8k OFDM), 64 QAM
Data Carrier Modulation, 5 Symbols
20.5
1
10
40
1
10
P , OUTPUT POWER (WATTS) AVG.
out
40
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 15. Single--Carrier DVB--T (8k OFDM)
Power Gain versus Output Power
(Single--Ended Narrowband Test Circuit)
Figure 16. Single--Carrier DVB--T (8k OFDM)
ACPR versus Output Power (Single--Ended
Narrowband Test Circuit)
50
-- 4 5
-- 3 0 _C
V
= 50 Vdc, I = 350 mA
DQ
DD
f = 860 MHz, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
-- 5 0
40
η
D
25_C
-- 5 5
-- 6 0
-- 6 5
30
20
10
0
85_C
G
ps
85_C
= --30_C
T
C
25_C
ACPR
-- 7 0
1
10
, OUTPUT POWER (WATTS) AVG.
40
P
out
Figure 17. Single--Carrier DVB--T (8k OFDM) Drain Efficiency,
Power Gain and ACPR versus Output Power versus
Temperature (Single--Ended Narrowband Test Circuit)
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
7
TYPICAL CHARACTERISTICS
9
8
10
V
P
η
= 50 Vdc
= 18 W Avg.
= 28.5%
DD
out
10
D
7
6
5
4
10
10
10
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 18. MTTF versus Junction Temperature -- CW
V
= 50 Vdc, I = 350 mA, P = 18 W Average
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
860
1.58 -- j0.89
3.51 -- j3.98
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 19. Series Equivalent Source and Load Impedance (Single--Ended Narrowband Test Circuit)
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
8
470--860 MHz BROADBAND REFERENCE CIRCUIT
VDD = 50 Volts, IDQ = 450 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF.
P
f
G
η
D
Output Signal PAR IMD Shoulder
out
ps
Signal Type
(W)
(MHz) (dB)
(%)
(dB)
(dBc)
DVB--T (8k OFDM)
4.5 Avg.
470
650
860
470
650
860
470
650
860
21.7
21.5
21.9
21.8
21.6
21.9
21.8
21.6
21.7
12.6
11.2
11.6
20.3
17.5
18.5
31.0
26.4
27.6
10.1
10.1
9.8
9.9
9.9
9.1
7.9
8.4
7.1
--40.1
--43.1
--46.0
--35.9
--40.9
--41.7
--27.8
--37.6
--30.4
9 Avg.
18 Avg.
V
V
DD
GG
C11
C21
C13
C19
R1
C23
C10
C1
R3
R4
C3
C7
C8
C5
C4
C9
C2
C24
R2
C20
C14
C22
Q1
MRF6VP3091N
Rev. 1
C12
V
GG
V
DD
Note: Component numbers C6, C15, C16, C17 and C18 are not used.
Figure 20. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference
Circuit Component Layout
Figure 21. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference
Circuit Component Layout — Bottom
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
9
0.125
0.430
E
R0.370
0.500
D
D
0.595
1.405
0.642
0.831
C
C
A
A
1.000
B
1.171
1.359
1.500
1.570
E
1.875
2.000
0.0000
0.0050
Diamond Saw (0.015″) 2X
0.000
0.250
0.490
A
A
E
E
0.270
Drill from bottom Dia. = 0.257″
T0--272 0.490″ Copper Heatsink (for 30 mil 1 oz/1 oz PCB)
Designators
Details
A
B
C
D
E
2 places, mill down cavity 0.250″
2 places, on sides, 0.1875 diameter notch 0.020″ deep (N connector notch)
4 places, side, drill & tap #2--56 screw 0.500″ deep (SMA holes)
4 places, side, drill & tap #4--40 screw 0.500″ deep (N conn holes)
2 places drill diameter = 0.257″, from bottom depth = 0.270″
All others, drill through & tap for #4--40 screw
Figure 22. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference
Circuit Component Layout — Heatsink
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
10
Table 7. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component
Designations and Values
Part
Description
51 pF Chip Capacitors
Part Number
ATC100B510GT500XT
ATC100B7R5CT500XT
ATC100B4R7CT500XT
ATC100B5R6CT500XT
T491D476K016AT
Manufacturer
C1, C3, C4, C7, C8, C10
ATC
ATC
ATC
ATC
C2
7.5 pF Chip Capacitor
C5
4.7 pF Chip Capacitor
C9
5.6 pF Chip Capacitor
C11, C12
C13, C14, C19, C20
C21, C22
C23, C24
Q1
47 μF, 16 V Tantalum Capacitors
200 pF Chip Capacitors
2.2 μF, 100 V Chip Capacitors
470 μF, 63 V Electrolytic Capacitors
RF High Power Transistor
10 Ω Chip Resistors
Kemet
ATC
ATC100B201JT300XT
C3225X7R2A225KT
MCGPR63V477M13X26--RH
MRF6VP3091NBR1
CRCW120610R0JNEA
CRCW120656R0FKEA
RO4350B
TDK
Multicomp
Freescale
Vishay
Vishay
Rogers
R1, R2
R3, R4
56 Ω Chip Resistors
PCB
0.030″, ε = 3.5
r
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
11
TYPICAL CHARACTERISTICS — 470--860 MHz BROADBAND REFERENCE CIRCUIT
26
24
22
20
18
16
14
70
60
50
V
= 50 Vdc, I = 450 mA, DVB--T (8k OFDM)
DQ
DD
64 QAM Data Carrier Modulation, 5 Symbols
P
= 4.5 W
out
9 W
G
ps
18 W
40
30
20
10
η
D
18 W
9 W
4.5 W
450 500
550 600
650
700 750 800 850
900
f, FREQUENCY (MHz)
Figure 23. Single--Carrier DVB--T (8k OFDM) Power Gain and Drain
Efficiency versus Frequency (Broadband Reference Circuit)
12
10
8
10
0
V
= 50 Vdc, I = 450 mA, DVB--T (8k OFDM)
DQ
DD
64 QAM Data Carrier Modulation, 5 Symbols
P
= 4.5 W
9 W
out
-- 1 0
PAR
18 W
18 W
-- 2 0
-- 3 0
-- 4 0
-- 5 0
6
(1)
IMD
4
9 W
2
4.5 W
0
450 500
550 600
650
700 750 800 850
900
f, FREQUENCY (MHz)
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 24. Single--Carrier DVB--T (8k OFDM) Output PAR and IMD
Shoulder versus Frequency (Broadband Reference Circuit)
26
24
22
20
18
16
14
80
70
60
V
= 50 Vdc, I = 450 mA
DQ
DD
Pulse Width = 100 μsec, 10% Duty Cycle
470 MHz
600 MHz
750 MHz
G
ps
50
40
30
20
750 MHz
600 MHz
860 MHz
470 MHz
η
D
860 MHz
100
0
20
40
60
80
120
140
160
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 25. Pulsed Power Gain and Drain Efficiency
versus Output Power (Broadband Reference Circuit)
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
Sept. 2011
Dec. 2011
•
Initial Release of Data Sheet
•
•
Added R5 part numbers MRF6VP3091NR5 and MRF6VP3091NBR5, p. 1
Fig. 7, CW Power Gain versus Output Power (Single--Ended Narrowband Test Circuit): adjusted x--axis
scale from 0 to 140 watts to 10 to 150 watts, p. 5
•
•
•
Fig. 10, Intermodulation Distortion Products versus Two--Tone Spacing: added f = 860 MHz to graph
callouts, p. 6
Added Fig. 21, 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component Layout --
470--860 MHz -- Bottom, p. 10
Added Fig. 22, 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component Layout --
470--860 MHz -- Heatsink, p. 10
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
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Document Number: MRF6VP3091N
Rev. 1, 12/2011
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