MRF750 [ASI]
NPN SILICON RF TRANSISTOR; NPN硅晶体管RF
| 型号： | MRF750 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF TRANSISTOR |
| 文件： | 总1页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF750
NPN SILICON RF TRANSISTOR
PACKAGE STYLE .205" 4L PILL
DESCRIPTION:
D
3
The MRF750 is Designed for UHF
Large Signal Amplifier Application from
407 to 512 MHz, and 5.0 to 10 V.
4
A
C
2
1
FEATURES INCLUDE:
• High Power Gain
• Infinite VSWR
B
F
G
E
H
MAXIMUM RATINGS
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.976 / 24.800
.976 / 24.800
.028 / 0.700
1.00 / 25.400
1.00 / 25.400
.031 / 0.800
200 mA
A
B
C
D
E
F
IC
VCE
PDISS
TJ
13 V
.138 / 3.500
.106 / 2.700
.039 / 1.000
.004 / 0.100
.200 / 5.100
.139 / 3.400
.047 / 1.200
.006 / 0.150
.208 / 5.300
2.5 W @ TC = 25 OC
-65 OC to +150 OC
-65 OC to +150 OC
28.5 OC/W
G
H
TSTG
θJC
1 & 3 = EMITTER
2 = BASE
4 = COLLECTOR
CHARACTERISTICS TC = 25 O
C
SYMBOL
BVCEO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 10 mA
IC = 10 mA
IE = 1.0 mA
VCB = 9.0 V
VCE = 5.0 V
13
V
25
BVCES
BVEBO
ICBO
V
4.0
V
500
5.0
µA
---
IC = 50 mA
20
70
3.5
11
hFE
VCB = 7.5 V
VCC = 7.5 V
f = 1.0 MHz
Cob
pF
10
55
GPE
dB
%
Pout = 500 mW
fo = 470 MHz
η
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
相关型号：
MRF7P20040HR3
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
MRF7P20040HR3_10
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
FREESCALE
MRF7P20040HSR3
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
MRF7S15100HR3
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
MRF7S15100HR3_09
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
FREESCALE
©2020 ICPDF网 联系我们和版权申明