MRF7S15100H [NXP]
N-Channel Enhancement-Mode Lateral MOSFET;
| 型号： | MRF7S15100H |
| 厂家： | 
NXP |
| 描述： | N-Channel Enhancement-Mode Lateral MOSFET |
| 文件： | 总13页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF7S15100H
Rev. 2, 6/2009
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1470 to
1510 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulations.
MRF7S15100HR3
MRF7S15100HSR3
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ
=
600 mA, Pout = 23 Watts Avg., f = 1507.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
1470-1510 MHz, 23 W AVG., 28 V
SINGLE W-CDMA
Power Gain — 19.5 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — -38 dBc in 3.84 MHz Channel Bandwidth
LATERAL N-CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW
Output Power
• Typical Pout @ 1 dB Compression Point ' 100 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
CASE 465-06, STYLE 1
NI-780
MRF7S1500HR3
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465A-06, STYLE 1
NI-780S
MRF7S1500HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +65
-6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
GS
DD
V
Storage Temperature Range
Case Operating Temperature
T
stg
- 65 to +150
150
T
°C
C
(1,2)
Operating Junction Temperature
T
225
°C
J
CW Operation @ T = 25°C
Derate above 25°C
CW
75
0.36
W
W/°C
A
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 55 W CW
Case Temperature 77°C, 23 W CW
R
θ
JC
°C/W
0.65
0.74
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DD
GS
Gate-Source Leakage Current
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 174 μAdc)
V
V
1.2
2
2
2.7
3.5
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 600 mAdc, Measured in Functional Test)
2.7
0.2
DD
D
Drain-Source On-Voltage
(V = 10 Vdc, I = 1.74 Adc)
V
0.1
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
0.6
300
176
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 600 mA, P = 23 W Avg., f = 1507.5 MHz, Single-Carrier
DD
DQ
out
W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset.
Power Gain
G
18
30
5.9
—
19.5
32
21
—
dB
ps
Drain Efficiency
η
%
dB
D
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
6.2
-38
-15
—
-35
-8
dBc
—
dB
1. Part internally matched both on input and output.
(continued)
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
= 600 mA, 1470-1510 MHz Bandwidth
DQ
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
DD
P
@ 1 dB Compression Point, CW
P1dB
IMD
—
100
—
W
out
IMD Symmetry @ 90 W PEP, P where IMD Third Order
MHz
out
sym
—
40
—
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
VBW
—
70
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P = 23 W Avg.
G
—
—
0.2
4.5
—
—
dB
out
F
Average Deviation from Linear Phase in 40 MHz Bandwidth
Φ
°
@ P = 100 W CW
out
Average Group Delay @ P = 100 W CW, f = 1490 MHz
Delay
—
—
1.9
23
—
—
ns
out
Part-to-Part Insertion Phase Variation @ P = 100 W CW,
ΔΦ
°
out
f = 1490 MHz, Six Sigma Window
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
—
0.010
0.007
—
—
dB/°C
W/°C
Output Power Variation over Temperature
ΔP1dB
(-30°C to +85°C)
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
3
R2
B1
V
BIAS
+
R3
Z6
C5
C4 C3
L1
R1
RF
INPUT
C2
Z1 Z2
Z3
Z4 Z5
Z7
Z8
Z9 Z10 Z11
Z12
Z13
C1
L3
L2
V
SUPPLY
+
C8
C11 C10 C9
Z26
RF
OUTPUT
Z28
Z15
Z14
Z16 Z17 Z18 Z19 Z20
Z21 Z22 Z23 Z24 Z25
C6
Z29
Z27
DUT
V
SUPPLY
C7
C12 C13
Z1
0.084″ x 0.078″ Microstrip
0.149″ x 0.153″ Microstrip
0.149″ x 0.303″ Microstrip
0.149″ x 0.065″ Microstrip
0.084″ x 0.146″ Microstrip
0.084″ x 0.104″ Microstrip
0.218″ x 0.080″ Microstrip
0.084″ x 0.206″ Microstrip
0.224″ x 0.085″ Microstrip
0.084″ x 0.369″ Microstrip
1.288″ x 0.206″ Microstrip
1.288″ x 0.144″ Microstrip
1.288″ x 0.369″ Microstrip
1.330″ x 0.112″ Microstrip
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
Z24
Z25
Z26, Z27
Z28, Z29
PCB
1.330″ x 0.538″ Microstrip
0.270″ x 0.280″ Microstrip
0.187″ x 0.150″ Microstrip
0.084″ x 0.042″ Microstrip
0.184″ x 0.292″ Microstrip
0.084″ x 0.066″ Microstrip
0.886″ x 0.194″ Microstrip
0.300″ x 0.084″ Microstrip
0.084″ x 0.215″ Microstrip
0.221″ x 0.075″ Microstrip
0.084″ x 0.175″ Microstrip
0.200″ x 0.525″ Microstrip
0.235″ x 0.102″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Arlon CuClad 250GX-0300-55-22, 0.030″, ε = 2.55
r
Figure 1. MRF7S15100HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S15100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
Fair-Rite
B1
Short Ferrite Bead
2743019447
C1, C6, C7, C8
C2
15 pF Chip Capacitors
ATC100B150JT500XT
ATC100B0R5BT500XT
ATC100B100JT500XT
C4532JB1H685MT
222215371101
ATC
0.5 pF Chip Capacitor
ATC
C3
10 pF Chip Capacitor
ATC
C4, C9, C13
C5, C10
C11, C12
L1, L2, L3
R1, R2
6.8 μF, 50 V Chip Capacitors
100 μF, 50 V Electrolytic Capacitors
2.2 μF, 50 V Chip Capacitors
7.15 nH Inductors
TDK
Vishay
TDK
C3225JB2A225MT
1606-TLC
Coilcraft
Vishay
Vishay
100 Ω, 1/4 W Chip Resistors
10 KΩ, 1/4 W Chip Resistor
CRCW12061000FKEA
CRCW12061002FKEA
R3
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
4
R2
B1
R3
C8
C3
C11
C9
C4
L1
R1
C5
C10
C2
L2
C6
C1
L3
C12
C13
C7
MRF7S15100H/HS Rev. 3
Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
35
20
19
34
G
ps
33
18
17
16
15
V
= 28 Vdc, P = 23 W (Avg.)
DD out
= 600 mA, Single−Carrier W−CDMA
η
32
D
I
DQ
31
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
−36
−37
−38
−39
−40
−41
−0.7
−0.8
−5
14
13
12
11
10
−10
−15
−20
−25
−30
PARC
IRL
−0.9
−1
−1.1
−1.2
ACPR
1400 1425 1450 1475 1500 1525 1550 1575 1600
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 23 Watts Avg.
20
19
18
17
−10
V
= 28 Vdc, P = 90 W (PEP), I = 600 mA
out DQ
Two−Tone Measurements
I
= 900 mA
DD
DQ
−20
−30
−40
−50
−60
−70
(f1 + f2)/2 = Center Frequency of 1490 MHz
750 mA
600 mA
IM3−L
IM3−U
IM5−U
IM5−L
450 mA
IM7−U
IM7−L
V
= 28 Vdc, f = 1490 MHz
CW Measurements
DD
300 mA
16
1
10
TWO−TONE SPACING (MHz)
100
1
10
100
200
P
, OUTPUT POWER (WATTS) CW
out
Figure 5. Intermodulation Distortion Products
versus Tone Spacing
Figure 4. CW Power Gain versus Output Power
−15
55
21
20
19
18
17
16
1
0
V
= 28 Vdc, I = 600 mA, f = 1490 MHz, Single−Carrier
DQ
DD
W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
η
D
50
−20
−25
−30
−35
−40
−45
ACPR
−1
−2
45
40
35
30
25
−1 dB = 24.14 W
−2 dB = 32.65 W
G
ps
−3
−4
−3 dB = 43.29 W
PARC
15
−5
15
25
35
45
55
65
P
, OUTPUT POWER (WATTS)
out
Figure 6. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
22
90
−18
−25
−32
−39
−46
−53
−60
V
= 28 Vdc, I = 600 mA, f = 1490 MHz
DQ
85_C
DD
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth
25_C
20
18
16
14
12
10
75
60
45
30
15
0
−30_C
25_C
85_C
G
ps
85_C
25_C
T = −30_C
C
ACPR
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
η
D
1
10
100
200
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 7. Single-Carrier W-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
25
20
15
10
0
−5
−10
S21
−15
−20
−25
V
= 28 Vdc
= 600 mA
DD
5
0
S11
I
DQ
1150 1250 1350 1450 1550 1650 1750 1850 1950 2050 2150 2250
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
9
10
8
10
7
6
10
10
10
5
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 23 W Avg., and η = 32%.
DD
out
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 9. MTTF versus Junction Temperature
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
7
W-CDMA TEST SIGNAL
100
10
10
0
−10
−20
−30
−40
−50
−60
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
0.001
−70
−80
0.0001
0
1
2
3
4
5
6
7
8
9
10
−90
PEAK−TO−AVERAGE (dB)
−100
Figure 10. CCDF W-CDMA IQ Magnitude
Clipping, Single-Carrier Test Signal
−9 −7.2 −5.4 −3.6 −1.8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 11. Single-Carrier W-CDMA Spectrum
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
8
Z = 10 Ω
o
Z
load
f = 1570 MHz
f = 1410 MHz
f = 1570 MHz
f = 1410 MHz
Z
source
V
= 28 Vdc, I = 600 mA, P = 23 W Avg.
DQ out
DD
f
Z
Z
load
W
source
W
MHz
1410
1430
1450
1470
1490
1510
1530
1550
1570
2.51 - j5.82
2.53 - j5.58
2.55 - j5.36
2.58 - j5.15
2.62 - j4.97
2.67 - j4.81
2.73 - j4.68
2.79 - j4.57
2.85 - j4.49
4.12 - j4.20
3.95 - j4.07
3.78 - j3.94
3.61 - j3.80
3.45 - j3.65
3.30 - j3.51
3.15 - j3.37
3.00 - j3.22
2.87 - j3.06
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 12. Series Equivalent Source and Load Impedance
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
56
Ideal
55
P3dB = 51.63 dBm (146 W)
54
53
P1dB = 50.95 dBm (125 W)
52
Actual
51
50
49
48
V
= 28 Vdc, I = 600 mA, Pulsed CW
DQ
DD
47
46
10 μsec(on), 10% Duty Cycle, f = 1500 MHz
31 32 33 34 35 36
P , INPUT POWER (dBm)
27
28
29
30
37
in
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Z
Z
load
source
Ω
Ω
P1dB
2.02 + j6.21
2.00 - j3.65
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
10
PACKAGE DIMENSIONS
B
G
2X
Q
1
M
M
M
B
bbb
T A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
3
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
K
B
2
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
B
bbb
T A
MIN
33.91
9.65
MAX
34.16
9.91
A
B
1.335
0.380
0.125
0.495
0.035
0.003
1.345
0.390
0.170
0.505
0.045
0.006
C
3.18
4.32
(LID)
R
(INSULATOR)
M
N
D
12.57
0.89
0.08
12.83
1.14
0.15
E
M
M
M
M
M
M
M
bbb
T A
B
ccc
T A
T A
B
F
G
1.100 BSC
27.94 BSC
(INSULATOR)
S
(LID)
H
0.057
0.170
0.774
0.772
.118
0.067
0.210
0.786
0.788
.138
1.45
4.32
1.70
5.33
K
M
M
M
M
M
B
aaa
B
ccc
T A
M
19.66
19.60
3.00
19.96
20.00
3.51
H
N
Q
R
0.365
0.365
0.375
0.375
9.27
9.27
9.53
9.52
C
S
aaa
bbb
ccc
0.005 REF
0.010 REF
0.015 REF
0.127 REF
0.254 REF
0.381 REF
F
SEATING
PLANE
E
A
T
STYLE 1:
A
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465-06
ISSUE G
NI-780
MRF7S15100HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2X K
2
B
(FLANGE)
D
INCHES
DIM MIN MAX
MILLIMETERS
M
M
M
bbb
T A
B
MIN
20.45
9.65
3.18
12.57
0.89
0.08
1.45
4.32
19.61
19.61
9.27
9.27
−−−
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.70
5.33
20.02
20.02
9.53
9.52
1.02
0.76
A
B
0.805
0.380
0.125
0.495
0.035
0.003
0.057
0.170
0.774
0.772
0.365
0.365
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
0.815
0.390
0.170
0.505
0.045
0.006
0.067
0.210
0.786
0.788
0.375
0.375
C
D
E
(LID)
N
(LID)
R
F
M
M
M
M
ccc
T A
B
B
M
M
M
M
H
ccc
T A
T A
B
K
(INSULATOR)
S
M
(INSULATOR)
M
N
M
M
M
M
aaa
B
bbb
T A
R
S
H
U
Z
−−−
C
aaa
bbb
ccc
0.127 REF
0.254 REF
0.381 REF
3
F
SEATING
PLANE
E
A
STYLE 1:
T
PIN 1. DRAIN
2. GATE
5. SOURCE
A
(FLANGE)
CASE 465A-06
ISSUE H
NI-780S
MRF7S15100HSR3
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
2
July 2008
Feb. 2009
June 2009
•
•
Initial Release of Data Sheet
Added Fig. 9, MTTF versus Junction Temperature, p. 7
•
•
Added Maximum CW limit and temperature derating factor to the Maximum Ratings table, p. 1
Fig. 10, CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal and Fig. 11, Single-Carrier
W-CDMA Spectrum updated to show the undistorted input test signal, p. 8
•
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 12
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
12
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Document Number: MRF7S15100H
Rev. 2,6/2009
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