MRF6VP41KHSR6 [FREESCALE]
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs; 射频功率场效应晶体管N沟道增强模式横向的MOSFET
| 型号： | MRF6VP41KHSR6 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 文件： | 总13页 (文件大小：511K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF6VP41KH
Rev. 0, 1/2008
Freescale Semiconductor
‘
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6VP41KHR6
MRF6VP41KHSR6
Designed primarily for pulsed wideband applications with frequencies up to
450 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulsed Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA,
P
out = 1000 Watts Peak, Pulse Width = 100 μsec, Duty Cycle = 20%
10-450 MHz, 1000 W, 50 V
LATERAL N-CHANNEL
BROADBAND
Power Gain — 20 dB
Drain Efficiency — 64%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
RF POWER MOSFETs
Power
Features
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push-Pull Operation
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
CASE 375D-05, STYLE 1
NI-1230
MRF6VP41KHR6
CASE 375E-04, STYLE 1
NI-1230S
MRF6VP41KHSR6
PARTS ARE PUSH-PULL
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +110
-6, +10
- 65 to +150
150
Unit
Drain-Source Voltage
V
Vdc
Vdc
°C
DSS
Gate-Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
°C
C
T
200
°C
J
© Freescale Semiconductor, Inc., 2008. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
R
θ
JC
0.03
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
(3)
Off Characteristics
Gate-Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
—
110
—
—
—
—
—
10
—
μAdc
Vdc
GSS
GS
DS
Drain-Source Breakdown Voltage
(I = 300 mA, V = 0 Vdc)
V
(BR)DSS
D
GS
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
I
100
5
μAdc
mA
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
—
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(3)
Gate Threshold Voltage
(V = 10 Vdc, I = 1600 μAdc)
V
1
1.68
2.2
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(4)
Gate Quiescent Voltage
(V = 50 Vdc, I = 150 mAdc, Measured in Functional Test)
V
1.5
—
3.5
—
DD
D
(3)
Drain-Source On-Voltage
(V = 10 Vdc, I = 4 Adc)
V
0.28
GS
D
(3)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
3.3
147
506
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
(4)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 450 MHz,
DD DQ out
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
G
19
60
—
20
64
22
—
-9
dB
%
ps
Drain Efficiency
η
D
Input Return Loss
IRL
-18
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push-pull configuration.
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
2
B1
V
SUPPLY
+
+
V
BIAS
+
L3
C25 C26 C27 C28 C29 C30
C1
C2
C3
C4
L1
Z14
COAX3
COAX1
C22
C23
Z12 Z16 Z18 Z20 Z22
Z8
Z2
Z3
Z4 Z6
Z10
RF
OUTPUT
RF
INPUT
C5
Z1
Z24
DUT
C15 C16 C17 C18 C19
C24
C7 C8
Z5 Z7
C9
C10
Z11
C6
Z13
Z17 Z19 Z21 Z23
Z9
L2
C21
C20
Z15
L4
COAX2
COAX4
B2
V
SUPPLY
V
BIAS
+
+
+
C31 C32 C33 C34 C35 C36
C11
C12 C13 C14
Z1
0.366″ x 0.082″ Microstrip
0.170″ x 0.100″ Microstrip
0.220″ x 0.451″ Microstrip
0.117″ x 0.726″ Microstrip
0.792″ x 0.058″ Microstrip
0.316″ x 0.726″ Microstrip
0.262″ x 0.507″ Microstrip
Z14*, Z15*
Z16, Z17
Z18, Z19
Z20, Z21, Z22, Z23
Z24
0.764″ x 0.150″ Microstrip
0.290″ x 0.430″ Microstrip
0.100″ x 0.430″ Microstrip
0.080″ x 0.430″ Microstrip
0.257″ x 0.215″ Microstrip
Z2*, Z3*
Z4*, Z5*
Z6, Z7
Z8*, Z9*
Z10, Z11
Z12, Z13
PCB
Arlon CuClad 250GX-0300-55-22, 0.030″, ε = 2.55
r
* Line length includes microstrip bends
Figure 2. MRF6VP41KHR6 Test Circuit Schematic
Table 5. MRF6VP41KHR6 Test Circuit Component Designations and Values
Part
Description
47 Ω, 100 MHz Short Ferrite Beads
47 μF, 50 V Electrolytic Capacitors
0.1 μF Chip Capacitors
Part Number
Manufacturer
Fair-Rite
B1, B2
2743019447
C1, C11
476KXM063M
Illinois
C2, C12, C28, C34
CDR33BX104AKYS
C1812C224K5RAC
C1825C225J5RAC
ATC100B270JT500XT
27291SL
Kemet
C3, C13, C27, C33
220 nF, 50 V Chip Capacitors
2.2 μF, 50 V Chip Capacitors
27 pF Chip Capacitors
Kemet
C4, C14
C5, C6, C8, C15
C7, C10
C9
Kemet
ATC
0.8-8.0 pF Variable Capacitors
33 pF Chip Capacitor
Johanson Components
ATC100B330JT500XT
ATC100B120JT500XT
ATC100B100JT500XT
ATC100B9R1CT500XT
ATC100B8R2CT500XT
ATC100B241JT200XT
ATC
ATC
ATC
ATC
ATC
ATC
C16
12 pF Chip Capacitor
C17
10 pF Chip Capacitor
C18
9.1 pF Chip Capacitor
C19
8.2 pF Chip Capacitor
C20, C21, C22, C23,
C25, C32
240 pF Chip Capacitors
C24
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
2225X7R225KT3AB
EMVY630GTR331MMH0S
UT-141C-25
ATC
C26, C31
C29, C30, C35, C36
Coax1, 2, 3. 4
L1, L2
2.2 μF, 100 V Chip Capacitors
330 μF, 63 V Electrolytic Capacitors
25 Ω Semi Rigid Coax, 2.2″ Long
2.5 nH, 1 Turn Inductors
ATC
Multicomp
Micro-Coax
CoilCraft
Coilcraft
A01TKLC
L3, L4
43 nH, 10 Turn Inductors
B10TJLC
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
3
C29
C27
C1
MRF6VP41KH
Rev. 1
C2 C3
B1
C30
C28
C4
C25
C26
L1
COAX1
COAX3
L3
C22
C23
C19
C18
C7
C10
C5
C8 C9
C16
C15
C17
C6
C20
C21
C24
L4
COAX2
COAX4
L2
C32
C31
C35
C36
C33
B2
C14
C12
C11
C13
C34
Figure 3. MRF6VP41KHR6 Test Circuit Component Layout
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
1000
100
10
100
C
iss
T = 200°C
J
C
oss
T = 175°C
J
T = 150°C
J
Measured with 30 mV(rms)ac @ 1 MHz
= 0 Vdc
10
V
GS
C
rss
T
= 25°C
C
1
1
0
10
20
30
40
50
1
10
V , DRAIN−SOURCE VOLTAGE (VOLTS)
DS
100
200
V
, DRAIN−SOURCE VOLTAGE (VOLTS)
DS
Figure 4. Capacitance versus Drain-Source Voltage
Figure 5. DC Safe Operating Area
21
80
70
60
50
40
30
20
10
0
65
64
63
62
61
60
59
58
57
56
55
Ideal
P3dB = 60.70 dBm (1174.89 W)
V
= 50 Vdc
= 150 mA
DD
20
19
18
17
16
15
14
13
I
DQ
f = 450 MHz
G
ps
P1dB = 60.33 dBm (1078.94 W)
Pulse Width = 100 μsec
Duty Cycle = 20%
Actual
η
D
V
= 50 Vdc
= 150 mA
DD
I
DQ
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
1
10
100
1000 2000
34
35
36
37
38
39
40
41
42
43
44
P
, OUTPUT POWER (WATTS) PULSED
out
P , INPUT POWER (dBm) PULSED
in
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 7. Pulsed Output Power versus
Input Power
23
22
22
20
18
I
= 6000 mA
DQ
3600 mA
21
20
19
18
17
1500 mA
50 V
45 V
750 mA
375 mA
16
14
40 V
35 V
V
= 30 V
DD
V
= 50 Vdc
f = 450 MHz
DD
I
= 150 Vdc, f = 450 MHz
DQ
150 mA
Pulse Width = 100 μsec
Duty Cycle = 20%
Pulse Width = 100 μsec
Duty Cycle = 20%
12
10
100
, OUTPUT POWER (WATTS) PULSED
1000
2000
0
200
400
600
800
1000
1200
1400
P
P
, OUTPUT POWER (WATTS) PULSED
out
out
Figure 9. Pulsed Power Gain versus
Output Power
Figure 8. Pulsed Power Gain versus
Output Power
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
65
60
55
50
45
40
35
22
100
V
= 50 Vdc
= 150 mA
DD
T
= −30_C
21
90
80
70
60
50
C
T
= −30_C
85_C
C
I
DQ
20 f = 450 MHz
25_C
Pulse Width = 100 μsec
Duty Cycle = 20%
19
18
17
16
15
14
85_C
25_C
G
ps
40
30
20
10
0
V
= 50 Vdc
= 150 mA
DD
η
D
I
DQ
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
13
12
20
25
30
35
40
45
1
10
100
1000 2000
P , INPUT POWER (dBm) PULSED
in
P
, OUTPUT POWER (WATTS) PULSED
out
Figure 10. Pulsed Output Power versus
Input Power
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
7
10
6
10
5
10
4
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 1000 W Peak, Pulse Width = 100 μsec,
DD
out
Duty Cycle = 20%, and η = 64%.
D
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
6
Z = 2 Ω
o
f = 450 MHz
f = 450 MHz
Z
source
Z
load
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
W
source
W
MHz
450
0.86 + j1.06
1.58 + j1.22
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
load
=
Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
8
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
9
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
10
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
• Initial Release of Data Sheet
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
12
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Document Number: MRF6VP41KH
Rev. 0,1/2008
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