MRF6VP3450HR6_技术文档

Document Number: MRF6VP3450H

Rev. 2, 9/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF6VP3450HR6

MRF6VP3450HR5

MRF6VP3450HSR6

MRF6VP3450HSR5

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies from 470 to 860 MHz. The high gain and broadband performance

of these devices make them ideal for large-signal, common-source amplifier

applications in 50 volt analog or digital television transmitter equipment.

• Typical DVB-T OFDM Performance: V_DD= 50 Volts, I_DQ= 1400 mA,

P

_out= 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM

860 MHz, 450 W, 50 V

LATERAL N-CHANNEL

BROADBAND

Power Gain — 22.5 dB

Drain Efficiency — 28%

ACPR @ 4 MHz Offset — -62 dBc @ 4 kHz Bandwidth

RF POWER MOSFETs

• Typical Broadband Two-Tone Performance: V_DD= 50 Volts, I_DQ= 1400 mA,

P

_out= 450 Watts PEP, f = 470-860 MHz

Power Gain — 22 dB

Drain Efficiency — 44%

IM3 — -29 dBc

• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,

90 Watts Avg. (DVB-T OFDM Signal, 10 dB PAR, 7.61 MHz Channel

Bandwidth)

Features

CASE 375D-05, STYLE 1

NI-1230

MRF6VP3450HR6(HR5)

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Input Matched for Ease of Use

• Qualified Up to a Maximum of 50 V_DDOperation

• Integrated ESD Protection

• Excellent Thermal Stability

• Designed for Push-Pull Operation

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

CASE 375E-04, STYLE 1

NI-1230S

MRF6VP3450HSR6(HSR5)

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

PARTS ARE PUSH-PULL

RF /V

outA DSA

3

4

1

2

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +110

-6.0, +10

- 65 to +150

150

Unit

Drain-Source Voltage

V

Vdc

°C

DSS

Gate-Source Voltage

V

GS

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

T

stg

T

°C

C

T

200

°C

J

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

1

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 90 W CW

Case Temperature 62°C, 450 W Pulsed, 50 μsec Pulse Width, 2.5% Duty Cycle

R

θ

JC

0.27

0.04

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

Machine Model (per EIA/JESD22-A115)

Charge Device Model (per JESD22-C101)

1B (Minimum)

B (Minimum)

IV (Minimum)

Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

(3)

Off Characteristics

Gate-Source Leakage Current

(V = 5 Vdc, V = 0 Vdc)

I

—

110

—

10

—

10

μAdc

Vdc

GSS

GS

DS

Drain-Source Breakdown Voltage

(I = 50 mA, V = 0 Vdc)

V

(BR)DSS

D

GS

Zero Gate Voltage Drain Leakage Current

(V = 50 Vdc, V = 0 Vdc)

I

μAdc

DSS

DS

GS

Zero Gate Voltage Drain Leakage Current

—

(V = 100 Vdc, V = 0 Vdc)

DS

GS

On Characteristics

(3)

Gate Threshold Voltage

(V = 10 Vdc, I = 320 μAdc)

V

1

2

1.6

2.6

2.5

3.5

—

Vdc

GS(th)

GS(Q)

DS(on)

DS

D

(4)

Gate Quiescent Voltage

(V = 50 Vdc, I = 1400 mAdc, Measured in Functional Test)

V

DD

D

(3)

Drain-Source On-Voltage

(V = 10 Vdc, I = 1.58 Adc)

V

—

0.25

GS

D

(3,5)

Dynamic Characteristics

Reverse Transfer Capacitance

(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

DS

C

—

0.92

54.5

373

—

pF

rss

GS

Output Capacitance

(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

DS

C

oss

GS

Input Capacitance

C

iss

(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)

DS

GS

(4)

Functional Tests (In Freescale Broadband Test Fixture, 50 ohm system) V = 50 Vdc, I

= 1400 mA, P = 90 W Avg., f = 860 MHz,

out

DD

DQ

DVB-T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ 4 MHz Offset @ 4 kHz Bandwidth.

Power Gain

G

21.5

26

22.5

28

24.5

—

dB

%

ps

Drain Efficiency

η

D

Adjacent Channel Power Ratio

Input Return Loss

ACPR

IRL

—

-62

-4

-59

-2

dBc

dB

—

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

3. Each side of device measured separately.

4. Measurement made with device in push-pull configuration.

5. Part internally input matched.

(continued)

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

2

Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)

C

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Pulsed Performances (In Freescale Broadband Test Fixture, 50 ohm system) V = 50 Vdc, I = 1200 mA, P = 520 W,

DD

DQ

out

f = 470-860 MHz, 50 μsec Pulse Width, 2.5% Duty Cycle

Power Gain

G

—

20.5

50

—

dB

%

ps

Drain Efficiency

η

D

Input Return Loss

IRL

-3

dB

W

P

@ 1 dB Compression Point, Pulsed CW

P1dB

520

out

(f = 470-860 MHz)

Typical Two-Tone Performances (In Freescale Broadband Test Fixture, 50 ohm system) V = 50 Vdc, I

= 1400 mA, P = 450 W PEP,

out

DD

DQ

f = 470-860 MHz, 100 kHz Tone Spacing

Power Gain

G

—

22

44

—

dB

%

ps

Drain Efficiency

η

D

Intermodulation Distortion

Input Return Loss

IM3

IRL

-29

-2

dBc

dB

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

3

B1

R1

V

BIAS

+

Z19

R3

C24

C34 C44 C36 C38

Printed Balun Input

Z18

Z16

Z4

Z6

TOP

BOTTOM

Z2

Z8 Z10

Z12

Z14

RF

INPUT

Printed

Balun

Input

C1

C2

Z1

C3

Z13

C4

Z15

Z1

Z3

Z7

Z5

Z9 Z11

Z17

Z20

R4

B2

R2

Z21

V

BIAS

+

C25

C35 C45 C37 C39

Z25

V

SUPPLY

+

C26

C22

C40 C28

Z24

Z40

Z42

C13

Printed Balun Output

Z22

Z28

Z30

Z32 Z34

Z36

Z38

TOP

BOTTOM

C8

C7

RF

OUTPUT

Printed

Balun

Output

Z44

DUT

C5

C6

C11 C12

Z37

Z44

Z23

Z29

Z26

Z31

Z33 Z35

C14

Z39

Z43

Z41

C9

C10

Z27

C23

V

SUPPLY

+

C27

C41 C29

Z1

0.343″ x 0.065″ Microstrip

0.039″ x 0.200″ Microstrip

1.400″ x 0.590″ Microstrip

0.059″ x 0.118″ Microstrip

0.150″ x 0.394″ Microstrip

0.359″ x 0.394″ Microstrip

0.308″ x 0.394″ Microstrip

Z16, Z17

Z18, Z20

Z19, Z21

Z22, Z23

Z24, Z26

Z25, Z27

Z28, Z29

Z30, Z31

0.172″ x 0.465″ Microstrip

0.397″ x 0.059″ Microstrip

0.800″ x 0.059″ Microstrip

0.276″ x 0.465″ Microstrip

0.070″ x 0.157″ Microstrip

1.000″ x 0.157″ Microstrip

0.103″ x 0.392″ Microstrip

0.084″ x 0.392″ Microstrip

Z32, Z33

Z34, Z35

Z36, Z37

Z38, Z39

Z40, Z41

Z42, Z43

Z44

0.108″ x 0.392″ Microstrip

0.212″ x 0.388″ Microstrip

0.103″ x 0.388″ Microstrip

0.075″ x 0.157″ Microstrip

1.412″ x 0.071″ Microstrip

0.024″ x 0.087″ Microstrip

0.550″ x 0.065″ Microstrip

Z2, Z3

Z4, Z5

Z6, Z7

Z8, Z9

Z10, Z11

Z12, Z13

Z14, Z15

PCB

Taconic RF35, 0.031”, ε = 3.5

r

Figure 2. MRF6VP3450HR6(HSR6) Test Circuit Schematic

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

4

Table 5. MRF6VP3450HR6(HSR6) Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

Fair-Rite

B1, B2

C1, C2

C3

Short Ferrite Beads

2743019447

12 pF Chip Capacitors

ATC100B120GT500XT

ATC100B6R8BT500XT

ATC100B100GT500XT

ATC800B6R8BT500XT

ATC800B100J500XT

ATC800B4R7J500XT

ATC800B3R9J500XT

ATC100B331GT500XT

UUD1V220MCL1GS

EEVFK2A221M

ATC

6.8 pF Chip Capacitor

ATC

C4

10 pF Chip Capacitor

ATC

C5, C6, C8, C9

C7, C10, C13, C14

C11

6.8 pF Chip Capacitors

ATC

10 pF Chip Capacitors

ATC

4.7 pF Chip Capacitor

ATC

C12

3.9 pF Chip Capacitor

ATC

C22, C23

C24, C25

C26, C27

C28, C29

C34, C35

C36, C37

C38, C39

C40, C41

C44, C45

R1, R2

330 pF Chip Capacitors

22 μF Electrolytic Capacitors

220 μF, 100 V Electrolytic Capacitors

10 μF, 50 V Chip Capacitors

39 nF Chip Capacitors

ATC

Nichicon

Panasonic

TDK

C5750X5R1H106MT

ATC200B393KT50XT

ATC100B102JT500XT

ATC100B471JT500XT

HMK432BJ225KM-T

C3225X7R1H225MT

CRCW120610R0FKEA

CRCW12061R50FKEA

ATC

1000 pF Chip Capacitors

470 pF Chip Capacitors

2.2 μF, 100 V Chip Capacitors

2.2 μF, 50 V Chip Capacitors

10 Ω, 1/8 W Chip Resistors

1.5 Ω, 1/8 W Chip Resistors

ATC

Taiyo Yuden

TDK

Vishay

R3, R4

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

5

MRF6VP3450H

C28

B1

R1

C24

C36

C34

C26

C40

R3

C38

C44

C22

C13

C6

C1

C2

C7

C8

C3

C4

C5

C9

C10

C11

C12

C14

C23

C45

R4

C41

C27

C29

C35

B2

C25

C37 C39

Rev. 4

R2

Figure 3. MRF6VP3450HR6(HSR6) Test Circuit Component Layout — Top

Figure 3a. MRF6VP3450HR6(HSR6) Test Circuit Component Layout — Bottom

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

6

TYPICAL CHARACTERISTICS

1000

100

10

100

C

iss

C

oss

T = 150_C

J

T = 175_C

J

10

Measured with 30 mV(rms)ac @ 1 MHz

= 0 Vdc

C

rss

T = 200_C

V

J

GS

T

= 25_C

C

1

0

10

20

30

40

50

1

10

V , DRAIN−SOURCE VOLTAGE (VOLTS)

DS

100

V

, DRAIN−SOURCE VOLTAGE (VOLTS)

DS

Note: Each side of device measured separately.

Figure 4. Capacitance versus Drain-Source Voltage

Note: Each side of device measured separately.

Figure 5. DC Safe Operating Area

24

23.5

23

67

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

60

55

50

45

40

V

= 50 Vdc, I = 1200 mA, f = 860 MHz

DQ

DD

Ideal

Pulse Width = 50 μsec, Duty Cycle = 2.5%

P3dB = 57.85 dBm (610 W)

22.5

22

P2dB = 57.65 dBm

(582 W)

21.5

21

35

30

25

20

15

10

5

G

ps

P1dB = 57.15 dBm

(519 W)

20.5

20

Actual

19.5

19

η

D

V

= 50 Vdc, I = 1200 mA, f = 860 MHz

DQ

DD

18.5

18

Pulse Width = 12 μsec, Duty Cycle = 1%

0

10

100

1000

30 31 32 33 34 35 36 37 38 39 40 41 42

P

, OUTPUT POWER (WATTS) PULSED

out

P , INPUT POWER (dBm)

in

Figure 6. Pulsed Power Gain and Drain Efficiency

versus Output Power

Figure 7. Pulsed CW Output Power versus

Input Power

24

23

22

21

20

19

18

25

24

23

22

21

20

19

70

60

50

40

30

20

10

0

25_C

V

= 50 Vdc, I = 1200 mA, f = 860 MHz

DQ

DD

Pulse Width = 50 μsec, Duty Cycle = 2.5%

−30_C

85_C

G

ps

T

= −30_C

C

50 V

45 V

V

= 40 V

η

D

DD

25_C

85_C

V

= 50 Vdc, I = 1200 mA, f = 860 MHz

DQ

DD

17

16

Pulse Width = 50 μsec, Duty Cycle = 2.5%

18

0

100

200

300

400

500

600

700

10

100

P , OUTPUT POWER (WATTS) PULSED

out

1000

P

, OUTPUT POWER (WATTS) PULSED

out

Figure 8. Pulsed Power Gain versus

Output Power

Figure 9. Pulsed Power Gain and Drain Efficiency

versus Output Power

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

7

TYPICAL CHARACTERISTICS — TWO-TONE

−20

−30

−40

−50

−60

−70

−80

−10

V

= 50 Vdc, P = 450 W (PEP), I = 1400 mA

out DQ

Two−Tone Measurements

DD

V

= 50 Vdc, I = 1400 mA, f1 = 854 MHz

DQ

f2 = 860 MHz, Two−Tone Measurements

DD

−20

3rd Order

−30

−40

−50

−60

−70

3rd Order

5th Order

7th Order

5

10

100

1000

0.1

1

10

60

P

, OUTPUT POWER (WATTS) PEP

out

TWO−TONE SPACING (MHz)

Figure 10. Intermodulation Distortion

Products versus Output Power

Figure 11. Intermodulation Distortion

Products versus Tone Spacing

23

22.8

22.6

22.4

22.2

−20

V

= 50 Vdc, f1 = 859.9 MHz, f2 = 860 MHz

Two−Tone Measurements, 100 kHz Tone Spacing

DD

−25

−30

−35

I

= 700 mA

DQ

I

= 1400 mA

DQ

975 mA

1075 mA

22

1075 mA

1250 mA

21.8

975 mA

−40

−45

−50

1250 mA

1400 mA

21.6

21.4

21.2

21

700 mA

V

= 50 Vdc, f1 = 859.9 MHz, f2 = 860 MHz

Two−Tone Measurements, 100 kHz Tone Spacing

DD

50

500

50

500

P

, OUTPUT POWER (WATTS) PEP

out

P

, OUTPUT POWER (WATTS) PEP

out

Figure 13. Third Order Intermodulation

Distortion versus Output Power

Figure 12. Two-Tone Power Gain versus

Output Power

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

8

TYPICAL CHARACTERISTICS — OFDM

100

10

−20

−30

−40

7.61 MHz

1

−50

4 kHz BW

−60

−70

−80

−90

0.1

0.01

ACPR Measured at 4 MHz Offset

from Center Frequency

8K Mode DVB−T OFDM

64 QAM Data Carrier Modulation

5 Symbols

8K Mode DVB−T OFDM

64 QAM Data Carrier Modulation, 5 Symbols

0.001

−100

−110

0.0001

0

2

4

6

8

10

12

−5

−4

−3

−2

−1

0

1

2

3

4

5

PEAK−TO−AVERAGE (dB)

f, FREQUENCY (MHz)

Figure 14. Single-Carrier DVB-T OFDM

Figure 15. 8K Mode DVB-T OFDM Spectrum

23

−50

V

= 50 Vdc, f = 860 MHz

DD

8K Mode OFDM, 64 QAM Data Carrier

Modulation, 5 Symbols

22.5

I

= 1400 mA

DQ

22

21.5

21

−60

975 mA

700 mA

I

= 700 mA

DQ

1250 mA

1075 mA

975 mA

V

= 50 Vdc, f = 860 MHz

DD

20.5

20

8K Mode OFDM, 64 QAM Data Carrier

Modulation, 5 Symbols

1400 mA

1250 mA

1075 mA

−70

20

100

200

20

100

P , OUTPUT POWER (WATTS) AVG.

out

200

P

, OUTPUT POWER (WATTS) AVG.

out

Figure 16. Single-Carrier DVB-T OFDM Power

Gain versus Output Power

Figure 17. Single-Carrier DVB-T OFDM ACPR

versus Output Power

65

−46

85_C

−48

V

= 50 Vdc, I = 1400 mA

DQ

DD

60

25_C

f = 860 MHz, 8K Mode OFDM

64 QAM Data Carrier Modulation

5 Symbols

−50

55

50

45

40

35

30

25

20

15

10

5

−30_C

−52

ACPR

−54

−56

−58

−60

−62

−64

−66

−68

−70

−72

η

D

T

= −30_C

85_C

C

G

ps

25_C

0

10

100

, OUTPUT POWER (WATTS) AVG.

300

P

out

Figure 18. Single-Carrier DVB-T OFDM ACPR Power

Gain and Drain Efficiency versus Output Power

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

9

TYPICAL CHARACTERISTICS — 470-860 MHz

23

60

G

ps

22.5

22

50

40

30

20

10

0

21.5

21

860 MHz

665 MHz

20.5

20

860 MHz

470 MHz

665 MHz

470 MHz

19.5

19

η

D

18.5

18

V

= 50 Vdc, I = 1200 mA

DQ

DD

17.5

17

Pulse Width = 50 μsec, Duty Cycle = 2.5%

10

100

1000

P

, OUTPUT POWER (WATTS) PULSED

out

Figure 19. Broadband Pulsed Power Gain and Drain

Efficiency versus Output Power — 470-860 MHz

27

26

25

24

23

22

21

20

19

18

70

60

50

40

V

= 50 Vdc, P = P1dB, I = 1200 mA

out DQ

DD

Pulse Width = 50 μsec, Duty Cycle = 2.5%

η

D

700

650

600

G

ps

550

500

450

30

20

P1dB

17

470 500 530 560 590 620 650 680 710 740 770 800 830 860

f, FREQUENCY (MHz)

Figure 20. Pulsed Power Gain and Drain Efficiency

versus Frequency at P1dB — 470-860 MHz

50

45

40

35

30

25

−50

−55

−60

−65

V

= 50 Vdc, I = 1400 mA, 8K Mode OFDM

DQ

64 QAM Data Carrier Modulation, 5 Symbols

DD

860 MHz

665 MHz

470 MHz

G

860 MHz

ps

20

15

10

5

665 MHz

ACPR

−70

−75

η

D

0

3

10

100

300

P

, OUTPUT POWER (WATTS) AVG.

out

Figure 21. Single-Carrier DVB-T OFDM ACPR, Power Gain

and Drain Efficiency versus Output Power — 470-860 MHz

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

10

TYPICAL CHARACTERISTICS — 470-860 MHz

24

23

22

21

36

34

G

ps

32

30

28

26

24

22

20

η

D

0

20

19

18

17

−2

−4

−6

−8

IRL

V

P

= 50 Vdc, I = 1400 mA

DQ

= 90 W Avg., 8K Mode OFDM

DD

out

64 QAM Data Carrier Modulation, 5 Symbols

16

470 500 530 560 590 620 650 680 710 740 770 800 830 860

f, FREQUENCY (MHz)

Figure 22. Single-Carrier DVB-T OFDM Power Gain, Drain Efficiency

and IRL versus Frequency — 470-860 MHz

TYPICAL CHARACTERISTICS

8

10

7

10

6

10

5

10

90

110

130

150

170

190

210

230

250

T , JUNCTION TEMPERATURE (°C)

J

This above graph displays calculated MTTF in hours when the device

is operated at V = 50 Vdc, P = 90 W Avg., and η = 28%.

DD

out

D

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 23. MTTF versus Junction Temperature

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

11

Z = 10 Ω

o

f = 860 MHz

Z

load

f = 470 MHz

f = 860 MHz

Z

source

f = 470 MHz

V

= 50 Vdc, I = 1400 mA, P = 90 W Avg.

DQ out

DD

f

Z

load

W

source

W

MHz

470

650

860

2.81 - j1.88

6.46 + j1.21

3.90 + j2.09

5.52 + j2.34

7.46 + j2.26

2.60 + j3.73

Z

=

Test circuit impedance as measured from

gate to gate, balanced configuration.

source

Test circuit impedance as measured from

drain to drain, balanced configuration.

load

Device

Under

Test

Output

Matching

Network

Input

Matching

Network

+

−

+

Z

source

load

Figure 24. Series Equivalent Source and Load Impedance

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

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PACKAGE DIMENSIONS

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

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MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

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RF Device Data

Freescale Semiconductor

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RF Device Data

Freescale Semiconductor

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

0

1

July 2008

Aug. 2008

•

Initial Release of Data Sheet

Corrected component designation part number for C34, 35 in Table 5. Test Circuit Component Designation

and Values, p. 5

•

Added Note to Fig. 4, Capacitance versus Drain-Source Voltage and Fig. 5, DC Safe Operating Area to

denote that each side of device is measured separately, p. 7

Adjusted imaginary component signs in Fig. 24, Series Equivalent Source and Load Impedance data table

and replotted data, p. 12

2

Sept. 2008

•

Fig. 24, Series Equivalent Source and Load Impedance, corrected Z

copy to read ”Test circuit

source

impedance as measured from gate to gate, balanced configuration” and Z

impedance as measured from gate to gate, balanced configuration”, p. 12

copy to read ”Test circuit

load

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

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17

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MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5

RF Device Data

Freescale Semiconductor

Document Number: MRF6VP3450H

1^R8^{ev. 2, 9/2008}


型号：	MRF6VP3450HR6
厂家：	Freescale
描述：	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强模式横向的MOSFET 晶体晶体管功率场效应晶体管射频
文件：	总18页 (文件大小：636K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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