MRF6VP41KHR7 [FREESCALE]
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs; 射频功率场效应晶体管N - 沟道增强 - 模式横向的MOSFET型号: | MRF6VP41KHR7 |
厂家: | Freescale |
描述: | RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
文件: | 总19页 (文件大小:1294K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Document Number: MRF6VP41KH
Rev. 6, 4/2012
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF6VP41KHR6
MRF6VP41KHSR6
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for pulse and CW wideband applications with frequencies up to
500 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
10--500 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
•
Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA,
P
out = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power
Features
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
CASE 375D--05, STYLE 1
NI--1230
MRF6VP41KHR6
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP41KHSR6
PARTS ARE PUSH--PULL
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
-- 6 , + 1 0
-- 65 to +150
150
Unit
Drain--Source Voltage
V
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
(3)
Total Device Dissipation @ T = 25°C, CW only
P
1333
W
C
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to Fig. 12, Transient Thermal Impedance, for information to calculate value for pulsed operation.
© Freescale Semiconductor, Inc., 2008--2010, 2012. All rights reserved.
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Impedance, Junction to Case
Z
θ
0.03
°C/W
JC
Pulse: Case Temperature 80°C, 1000 W Peak, 100 μsec Pulse Width, 20% Duty Cycle,
(3)
450 MHz
Thermal Resistance, Junction to Case
R
θ
0.15
°C/W
JC
CW: Case Temperature 84°C, 1000 W CW, 352.2 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2, passes 2000 V
A, passes 125 V
IV, passes 2000 V
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
—
110
—
—
—
—
—
10
—
μAdc
Vdc
GSS
GS
DS
Drain--Source Breakdown Voltage
(I = 300 mA, V = 0 Vdc)
V
(BR)DSS
D
GS
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
I
100
5
μAdc
mA
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
—
(V = 100 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(4)
Gate Threshold Voltage
(V = 10 Vdc, I = 1600 μAdc)
V
1
1.68
2.2
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(5)
Gate Quiescent Voltage
(V = 50 Vdc, I = 150 mAdc, Measured in Functional Test)
V
1.5
—
3.5
—
DD
D
(4)
Drain--Source On--Voltage
(V = 10 Vdc, I = 4 Adc)
V
0.28
GS
D
(4)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
3.3
147
506
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(5)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 450 MHz,
DD DQ out
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
G
19
60
—
20
64
22
—
-- 9
dB
%
ps
Drain Efficiency
η
D
Input Return Loss
IRL
-- 1 8
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Refer to Fig. 12, Transient Thermal Impedance, for other pulsed conditions.
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
(continued)
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance — 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W CW
DD
DQ
out
Power Gain
G
—
20.1
—
—
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
η
—
—
67
IRL
--10.2
dB
Typical Performance — 500 MHz (In Freescale 500 MHz Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 1000 W Peak
DD
DQ
out
(200 W Avg.), f = 500 MHz, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
G
—
—
—
19.5
66
—
dB
%
ps
D
Drain Efficiency
η
—
—
Input Return Loss
IRL
-- 2 3
dB
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
3
B1
V
SUPPLY
+
+
V
BIAS
+
L3
C25 C26 C27 C28
C29 C30
C1
C2
C3
C4
L1
Z14
COAX3
COAX1
C22
C23
Z12 Z16 Z18
Z20 Z22
Z8
Z2
Z3
Z4 Z6
Z10
RF
RF
OUTPUT
INPUT
C5
Z1
Z24
DUT
C15 C16 C17 C18 C19
C24
C7 C8
Z5 Z7
C9
C10
Z11
C6
Z13
Z17 Z19
Z21 Z23
Z9
L2
C21
C20
Z15
L4
COAX2
COAX4
B2
V
SUPPLY
V
BIAS
+
+
+
C31 C32 C33 C34 C35 C36
C11
C12 C13 C14
Z1
0.366″ x 0.082″ Microstrip
0.170″ x 0.100″ Microstrip
0.220″ x 0.451″ Microstrip
0.117″ x 0.726″ Microstrip
0.792″ x 0.058″ Microstrip
0.316″ x 0.726″ Microstrip
0.262″ x 0.507″ Microstrip
Z14*, Z15*
Z16, Z17
Z18, Z19
Z20, Z21, Z22, Z23
Z24
0.764″ x 0.150″ Microstrip
0.290″ x 0.430″ Microstrip
0.100″ x 0.430″ Microstrip
0.080″ x 0.430″ Microstrip
0.257″ x 0.215″ Microstrip
Z2*, Z3*
Z4*, Z5*
Z6, Z7
Z8*, Z9*
Z10, Z11
Z12, Z13
PCB
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
r
* Line length includes microstrip bends
Figure 2. MRF6VP41KHR6(HSR6) Pulse Test Circuit Schematic — 450 MHz
Table 5. MRF6VP41KHR6(HSR6) Pulse Test Circuit Component Designations and Values — 450 MHz
Part
Description
47 Ω, 100 MHz Short Ferrite Beads
47 μF, 50 V Electrolytic Capacitors
0.1 μF Chip Capacitors
Part Number
Manufacturer
B1, B2
2743019447
Fair--Rite
C1, C11
476KXM063M
Illinois
C2, C12, C28, C34
CDR33BX104AKYS
C1812C224K5RAC
C1825C225J5RAC
ATC100B270JT500XT
27291SL
Kemet
C3, C13, C27, C33
220 nF, 50 V Chip Capacitors
2.2 μF, 50 V Chip Capacitors
27 pF Chip Capacitors
Kemet
C4, C14
C5, C6, C8, C15
C7, C10
C9
Kemet
ATC
0.8--8.0 pF Variable Capacitors
33 pF Chip Capacitor
Johanson Components
ATC100B330JT500XT
ATC100B120JT500XT
ATC100B100JT500XT
ATC100B9R1CT500XT
ATC100B8R2CT500XT
ATC100B241JT200XT
ATC
ATC
ATC
ATC
ATC
ATC
C16
12 pF Chip Capacitor
C17
10 pF Chip Capacitor
C18
9.1 pF Chip Capacitor
C19
8.2 pF Chip Capacitor
C20, C21, C22, C23,
C25, C32
240 pF Chip Capacitors
C24
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
2225X7R225KT3AB
EMVY630GTR331MMH0S
UT--141C--25
ATC
C26, C31
C29, C30, C35, C36
Coax1, 2, 3, 4
L1, L2
2.2 μF, 100 V Chip Capacitors
330 μF, 63 V Electrolytic Capacitors
25 Ω Semi Rigid Coax, 2.2″ Shield Length
2.5 nH, 1 Turn Inductors
ATC
Nippon Chemi--Con
Micro--Coax
Coilcraft
A01TKLC
L3, L4
43 nH, 10 Turn Inductors
B10TJLC
Coilcraft
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
4
C29
C27
C1
MRF6VP41KH
Rev. 1
C2 C3
B1
C30
C28
C4
C25
C26
L1
COAX1
COAX3
L3
C22
C23
C19
C18
C7
C10
C5
C8 C9
C16
C15
C17
C6
L2
C20
C21
C24
L4
COAX2
COAX4
C32
C31
C35
C36
C33
B2
C14
C12
C11
C13
C34
Figure 3. MRF6VP41KHR6(HSR6) Pulse Test Circuit Component Layout — 450 MHz
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
1000
100
10
100
C
iss
C
oss
T = 200°C
J
T = 175°C
J
T = 150°C
J
Measured with ±30 mV(rms)ac @ 1 MHz
= 0 Vdc
10
V
GS
C
rss
T
= 25°C
C
1
1
0
10
20
30
40
50
1
10
V , DRAIN--SOURCE VOLTAGE (VOLTS)
DS
100
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
Note: Each side of device measured separately.
Figure 5. DC Safe Operating Area
21
80
70
60
50
40
30
20
10
0
65
Ideal
P3dB = 60.70 dBm (1174.89 W)
V
= 50 Vdc
= 150 mA
DD
64
63
62
61
60
59
58
57
20
19
18
17
16
15
14
13
I
DQ
G
ps
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
P1dB = 60.33 dBm (1078.94 W)
Actual
η
D
V
= 50 Vdc
DD
I
= 150 mA
DQ
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
56
55
1
10
100
1000 2000
34
35
36
37
38
39
40
41
42
43
44
P
, OUTPUT POWER (WATTS) PEAK
P , INPUT POWER (dBm) PEAK
in
out
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Figure 7. Output Power versus Input Power
23
22
22
20
18
I
= 6000 mA
DQ
3600 mA
21
20
19
18
17
1500 mA
50 V
45 V
750 mA
375 mA
16
14
40 V
35 V
V
= 30 V
DD
V
= 50 Vdc
DD
I
= 150 mA, f = 450 MHz
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
DQ
150 mA
Pulse Width = 100 μsec
Duty Cycle = 20%
12
10
100
, OUTPUT POWER (WATTS) PEAK
1000
2000
0
200
400
600
800
1000
1200
1400
P
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 9. Power Gain versus Output Power
Figure 8. Power Gain versus Output Power
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS
65
60
55
50
45
40
35
22
100
V
= 50 Vdc
= 150 mA
DD
T
= --30_C
21
90
80
70
60
50
C
T
= --30_C
85_C
C
I
DQ
20 f = 450 MHz
25_C
Pulse Width = 100 μsec
Duty Cycle = 20%
19
18
17
16
15
14
85_C
25_C
G
ps
40
30
20
10
0
V
= 50 Vdc
DD
η
D
I
= 150 mA
DQ
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
13
12
20
25
30
35
40
45
1
10
100
1000 2000
P , INPUT POWER (dBm) PEAK
in
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 10. Output Power versus Input Power
Figure 11. Power Gain and Drain Efficiency
versus Output Power
9
8
7
10
0.18
0.16
0.14
0.12
0.1
f = 450 MHz
D = 0.7
V
P
η
= 50 Vdc
= 1000 W CW
= 67%
DD
out
10
10
D
P
D
t
1
D = 0.5
D = 0.3
0.08
0.06
0.04
0.02
0
t
2
T
Z
= Case Temperature
C
JC
6
10
10
= Thermal Impedance (from graph)
= Peak Power Dissipation
P
D
D = 0.1
D = Duty Factor = t /t
1 2
2
θ
t = Pulse Width; t = Pulse Period
1
J
5
T (peak) = P * Z + T
D
JC
C
90
110
130
150
170
190
210
230
250
0.00001 0.0001
0.001
0.01
0.1
1
10
T , JUNCTION TEMPERATURE (°C)
J
RECTANGULAR PULSE WIDTH (S)
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. Transient Thermal Impedance
NOTE: For pulse applications or CW conditions, use the MTTF
calculator referenced above.
Figure 13. MTTF versus Junction Temperature -- CW
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
7
Z = 2 Ω
o
f = 450 MHz
f = 450 MHz
Z
source
Z
load
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
450
0.86 + j1.06
1.58 + j1.22
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 14. Series Equivalent Source and Load Impedance — 450 MHz
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
8
- - - -
C20
C22
C11
MRF6VP41KH
352 MHz
Rev. 1
C9 C7
C5
L3
C18
L1
COAX1
COAX3
C14
C3
C1
C2
C13
C4
C15
C16
C17
COAX2
COAX4
L2
L4
C19
C6
B2
C10
C12
C21
C23
C8
Figure 15. MRF6VP41KHR6(HSR6) Test Circuit Component Layout — 352.2 MHz
Table 6. MRF6VP41KHR6(HSR6) Test Circuit Component Designations and Values — 352.2 MHz
Part
Description
47 Ω, 100 MHz Short Ferrite Beads
27 pF Chip Capacitors
Part Number
Manufacturer
B1, B2
C1, C2
C3
2743019447
Fair--Rite
ATC100B270JT500XT
27291SL
ATC
0.8--8.0 pF Variable Capacitor, Gigatrim
75 pF Chip Capacitor
Johanson
ATC
C4
ATC100B750JT500XT
C1825C225J5RAC
C1812C224J5RAC
CDR33BX104AKYS
476KXM050M
C5, C6
C7, C8
2.2 μF Chip Capacitors
Kemet
220 nF Chip Capacitors
Kemet
C9, C10
C11, C12
C13
0.1 μF Chip Capacitors
AVX
47 μF, 50 V Electrolytic Capacitors
36 pF 500 V Chip Capacitor
Illinois Cap
CDE
MCM01--009ED360J--F
ATC100B241JT200XT
G2225X7R225KT3AB
MCRH63V477M13X21--RH
UT141--25
C14, C15, C16, C17 240 pF Chip Capacitors
C18, C19 2.2 μF Chip Capacitors
C20, C21, C22, C23 470 μF, 63 V Electrolytic Capacitors
ATC
ATC
Multicomp
Precision Tube Company
Coilcraft
Freescale
DS Electronics
Coax1, 2, 3, 4
L1, L2
25 Ω Semi Rigid Coax, 2.2″ Shield Length
2.5 nH Inductors
A01T
L3, L4
10 Turn #16 AWG ID=0.160″ Inductors, Hand Wound
Copper Wire
PCB
Arlon CuClad 250GX--0300--55--22, 0.030″, ε = 2.55
DS2655
r
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
9
f = 352.2 MHz
Z
source
f = 352.2 MHz
Z
load
Z = 10 Ω
o
V
= 50 Vdc, I = 150 mA, P = 1000 W CW
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
352.2
0.5 + j6.5
2.9 + j6.35
Z
Z
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
=
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 16. Series Equivalent Source and Load Impedance — 352.2 MHz
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
10
C29
C27
C1
MRF6VP41KH
Rev. 1
C2 C3
B1
C30
C28
C4
C25
C26
L1
COAX1
COAX3
L3
C22
C23
C19
C18
C7
C10
C5
C8 C9
C16
C15
C6
L2
C20
C21
C24
L4
COAX2
COAX4
C32
C31
C35
C36
C33
B2
C14
C12
C11
C13
C34
C17 not used in MRF6VP41KHR6(HSR6) 500 MHz application.
Figure 17. MRF6VP41KHR6(HSR6) Test Circuit Component Layout — 500 MHz
Table 7. MRF6VP41KHR6(HSR6) Test Circuit Component Designations and Values — 500 MHz
Part
Description
47 Ω, 100 MHz Short Ferrite Beads
47 μF, 50 V Electrolytic Capacitors
0.1 μF Chip Capacitors
Part Number
Manufacturer
Fair--Rite
B1, B2
2743019447
C1, C11
476KXM063M
Illinois
C2, C12, C28, C34
C3, C13, C27, C33
C4, C14
CDR33BX104AKYS
C1812C224K5RAC
C1825C225J5RAC
ATC100B270JT500XT
27291SL
Kemet
220 nF, 50 V Chip Capacitors
2.2 μF, 50 V Chip Capacitors
27 pF Chip Capacitors
Kemet
Kemet
C5, C6, C15
C7, C10
ATC
0.8--8.0 pF Variable Capacitors
13 pF Chip Capacitor
Johanson Components
C8
ATC100B120JT500XT
ATC100B330JT500XT
ATC100B9R1CT500XT
ATC100B8R2CT500XT
ATC100B241JT200XT
ATC
ATC
ATC
ATC
ATC
C9
33 pF Chip Capacitor
C18
9.1 pF Chip Capacitor
C16, C19
8.2 pF Chip Capacitors
C20, C21, C22, C23, C25,
C32
240 pF Chip Capacitors
C24
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
2225X7R225KT3AB
MCRH63V337M13X21--RH
UT--141C--25
ATC
C26, C31
C29, C30, C35, C36
Coax1, 2, 3, 4
L1, L2
2.2 μF, 100 V Chip Capacitors
330 μF, 63 V Electrolytic Capacitors
25 Ω Semi Rigid Coax, 2.2″ Shield Length
2.5 nH, 1 Turn Inductors
ATC
Multicomp
Micro--Coax
Coilcraft
Coilcraft
A01TKLC
L3, L4
43 nH, 10 Turn Inductors
B10TJLC
C17 not used in MRF6VP41KHR6(HSR6) 500 MHz application.
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
11
Z = 2 Ω
o
f = 500 MHz
f = 500 MHz
Z
load
Z
source
V
= 50 Vdc, I = 150 mA, P = 1000 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
500
0.75 + j0.5
1.73 + j0.95
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 18. Series Equivalent Source and Load Impedance — 500 MHz
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
12
PACKAGE DIMENSIONS
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
13
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
14
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
15
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
16
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF6VP41KH and MRF6VP41KHS parts will be available for 2 years after release of
MRF6VP41KH and MRF6VP41KHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF6VP41KH and MRF6VP41KHS in the R6 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
2
Jan. 2008
Apr. 2008
Sept. 2008
•
•
•
Initial Release of Data Sheet
Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
measured separately, p. 5
•
•
Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the
MTTF factor accordingly, p. 6
3
4
Nov. 2008
•
•
•
•
Added CW operation capability bullet to Features section, p. 1
Added CW operation to Maximum Ratings table, p. 1
Added CW thermal data to Thermal Characteristics table, p. 2
Fig. 14, Series Equivalent Source and Load Impedance, corrected Z
impedance as measured from gate to gate, balanced configuration” and Z
impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to show
push--pull test conditions, p. 7
copy to read “Test circuit
source
copy to read “Test circuit
load
Mar. 2009
•
•
CW rating limits updated from 1176 W to 1107 W and 5.5 W/°C to 4.6 W/°C to reflect recent remeasured
data, Max Ratings table, p. 1
CW Thermal Characteristics changed from 81°C to 48°C and 0.16 °C/W to 0.15 °C/W using data from the
most recent 352.2 MHz CW application circuit, p. 2
•
•
•
Added Typical Performances table for 352.2 MHz and 500 MHz applications, p. 3
Added Fig. 14, MTTF versus Junction Temperature -- CW, p. 7
Added Figs. 16 and 18, Test Circuit Component Layout -- 352.2 MHz and 500 MHz, and Tables 6 and 7, Test
Circuit Component Designations and Values -- 352.2 MHz and 500 MHz, p. 9, 11
•
Added Figs. 17 and 19, Series Equivalent Source and Load Impedance -- 352.2 MHz and 500 MHz, p. 10, 12
(continued)
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
17
REVISION HISTORY (cont.)
Revision
Date
Description
5
Apr. 2010
•
•
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 17
6
Apr. 2012
•
Table 1, Maximum Ratings, CW Operation: changed CW rating from an RF based value to a maximum
power dissipated value -- CW Operation @ T = 25°C, 1107 W changed to Total Device Dissipation @ T
=
C
C
25°C, CW only, 1333 watts. Value change to 1333 watts applies only to devices with a date code of
QQ1218 or newer. Refer to PCN15074, p. 1
•
•
Table 2, Thermal Characteristics, Thermal Resistance, Junction to Case: 2.4 mil wire configuration thermal
testing resulted in a case temperature change from 48°C to 84°C, p. 2
Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD
class, p. 2
•
•
•
Modified figure titles and/or graph axes labels to clarify application use, p. 4--7
Fig. 12, Transient Thermal Impedance: graph updated to show correct CW operation, p. 7
Fig. 13, MTTF versus Junction Temperature -- Pulsed removed, p. 7. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
•
Fig. 14, MTTF versus Junction Temperature – CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 7 (renumbered as Fig. 13 after Fig. 13, MTTF versus Junction
Temperature -- Pulsed removed)
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
18
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
How to Reach Us:
Home Page:
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Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
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Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of
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E 2008--2010, 2012 Freescale Semiconductor, Inc.
Document Number: MRF6VP41KH
Rev. 6,4/2012
相关型号:
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