MMRF1011H [NXP]
RF Power LDMOS Transistors;
NXP 
Document Number: MMRF1011H
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MMRF1011HR5
MMRF1011HSR5
RF power transistors designed for applications operating at frequencies
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulse applications, such as L-- Band radar.
Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout =
330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 sec,
Duty Cycle = 12%
Power Gain — 18 dB
1400 MHz, 330 W, 50 V
PULSE L--BAND
RF POWER MOSFETs
Drain Efficiency — 60.5%
Capable of Handling 5:1 VSWR @ 50 Vdc, 1400 MHz, 330 W Peak Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--780H--2L
MMRF1011HR5
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
NI--780S--2L
MMRF1011HSR5
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +100
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
C
Gate
Drain
1
2
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
(Top View)
T
C
C
Figure 1. Pin Connections
(1,2)
T
J
225
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
C/W
Thermal Resistance, Junction to Case
Z
0.13
JC
Case Temperature 65C, 330 W Peak, 300 sec Pulse Width, 12% Duty Cycle
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2014. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
1C
A
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
I
—
100
—
—
—
—
—
10
—
Adc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 100 mA)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
50
2.5
Adc
mA
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
(V = 90 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 662 Adc)
V
V
0.9
1.5
—
1.6
2.4
2.4
3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I = 150 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.63 Adc)
V
0.26
—
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
0.6
350
330
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 50 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 330 W Peak (39.6 W Avg.), f = 1400 MHz,
DD
DQ
out
Pulsed, 300 sec Pulse Width, 12% Duty Cycle
Power Gain
G
16.5
18
19.5
—
dB
%
ps
D
(2)
(2)
Drain Efficiency
59
60.5
Input Return Loss
IRL
—
-- 1 2
-- 9
dB
Pulse RF Performance (In Freescale Application Test Fixture, 50 ohm system) V = 50 Vdc, I = 150 mA, P = 330 W Peak
DD
DQ
out
(39.6 W Avg.), f1 = 1200 MHz, f2 = 1300 MHz and f3 = 1400 MHz, 300 sec Pulse Width, 12% Duty Cycle, t = 50 ns
r
Relative Insertion Phase
Gain Flatness
—
—
—
—
—
10
0.5
0.3
-- 2 0
-- 6 5
—
—
—
—
—
G
dB
F
Pulse Amplitude Droop
Harmonic 2nd and 3rd
Spurious Response
D
rp
dB
H2 & H3
dBc
dBc
Load Mismatch Stability
(VSWR = 3:1 at all Phase Angles)
VSWR--S
VSWR--T
All Spurs Below --60 dBc
Load Mismatch Tolerance
No Degradation in Output Power
(VSWR = 5:1 at all Phase Angles)
1. Part internally matched both on input and output.
100 × Pout
VDD × Ipeak
2. Drain efficiency is calculated by:
where: I
= (I
-- I ) / Duty Cycle (%) + I
DQ
.
DQ
peak
AVG
ηD
=
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
2
V
SUPPLY
+
+
C3
C5
C6
C7
C4
R1
V
BIAS
Z23
+
RF
OUTPUT
C9 C8
Z22
Z13
Z14 Z15 Z16 Z17 Z18 Z19 Z20
Z21
RF
INPUT
C2
Z1
Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11
Z12
C1
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.205 x 0.080 Microstrip
0.721 x 0.022 Microstrip
0.080 x 0.104 Microstrip
0.128 x 0.022 Microstrip
0.062 x 0.134 Microstrip
0.440 x 0.022 Microstrip
0.262 x 0.496 Microstrip
0.030 x 0.138 Microstrip
0.256 x 0.028 Microstrip
0.058 x 0.254 Microstrip
0.344 x 0.087 Microstrip
0.110 x 0.087 Microstrip
Z13
0.110 x 0.866 Microstrip
0.630 x 0.866 Microstrip
0.307 x 0.470 Microstrip
0.045 x 0.221 Microstrip
0.171 x 0.136 Microstrip
0.120 x 0.430 Microstrip
0.964 x 0.136 Microstrip
0.177 x 0.078 Microstrip
0.215 x 0.078 Microstrip
1.577 x 0.070 Microstrip
1.459 x 0.070 Microstrip
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
Z9
Z10
Z11
Z12
Arlon CuClad 250GX--0300--55--22, 0.030, = 2.55
r
Figure 2. MMRF1011HR5(HSR5) Test Circuit Schematic
Table 5. MMRF1011HR5(HSR5) Test Circuit Component Designations and Values
Part
Description
Part Number
ATC100B430JT500XT
ATC100B180JT500XT
ATC100B330JT500XT
ATC100B270JT500XT
2225X7R225KT3AB
Manufacturer
ATC
C1
C2
C3
C4
C5
C6
C7
C8
C9
R1
43 pF Chip Capacitor
18 pF Chip Capacitor
ATC
33 pF Chip Capacitor
ATC
27 pF Chip Capacitor
ATC
2.2 F, 100 V Chip Capacitor
470 F, 63 V Electrolytic Capacitor
330 pF, 63 V Electrolytic Capacitor
0.1 F, 35 V Chip Capacitor
10 F, 35 V Tantalum Capacitor
10 , 1/4 W Chip Resistor
ATC
EMVY630GTR471MMH0S
EMVY630GTR331MMH0S
CDR33BX104AKYS
Multicomp
Multicomp
Kemet
Kemet
Vishay
T491D106K035AT
CRCW120610R0FKEA
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
3
C9
C3
C4
C6
C5
R1
C8
C7
C2
C1
Figure 3. MMRF1011HR5(HSR5) Test Circuit Component Layout
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
1000
100
160
140
120
C
oss
C
iss
100
80
Measured with 30 mV(rms)ac @ 1 MHz
= 0 Vdc
P
= 300 W
out
V
GS
10
1
P
= 270 W
out
P
= 330 W
60
out
C
rss
40
V
= 50 Vdc, I = 150 mA
DQ
DD
20
0
f = 1200 MHz, Pulse Width = 300 sec
0.1
0
10
V
20
30
40
50
0
2
4
6
8
10
12
14
16
18
20
, DRAIN--SOURCE VOLTAGE (VOLTS)
DUTY CYCLE (%)
DS
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. Safe Operating Area
24
65
59
58
57
56
55
54
53
52
Ideal
P3dB = 55.30 dBm (339 W)
P1dB = 54.77 dBm (300 W)
22
20
55
45
35
25
Actual
G
ps
D
51
50
49
48
47
18
16
V
= 50 Vdc, I = 150 mA, f = 1400 MHz
DQ
Pulse Width = 300 sec, Duty Cycle = 12%
V
= 50 Vdc, I = 150 mA, f = 1400 MHz
DQ
Pulse Width = 300 sec, Duty Cycle = 12%
DD
DD
50
100
400
27
29
31
33
35
37
39
P
, OUTPUT POWER (WATTS) PEAK
P , INPUT POWER (dBm) PEAK
in
out
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Figure 7. Output Power versus Input Power
22
21
20
19
18
17
22
I
= 150 mA, f = 1400 MHz
DQ
Pulse Width = 300 sec
21
20
19
18
17
16
15
I
= 600 mA
DQ
Duty Cycle = 12%
300 mA
150 mA
450 mA
45 V
50 V
40 V
35 V
V
= 50 Vdc, f = 1400 MHz
DD
Pulse Width = 300 sec, Duty Cycle = 12%
V
= 30 V
DD
50
100
400
50
100
, OUTPUT POWER (WATTS) PEAK
400
P
, OUTPUT POWER (WATTS) PEAK
P
out
out
Figure 9. Power Gain versus Output Power
Figure 8. Power Gain versus Output Power
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
400
300
200
100
0
24
70
58
-- 3 0 _C
T
= --30_C
C
25_C
55_C
25_C
22
85_C
G
ps
85_C
T
= --30_C
C
25_C
85_C
20
18
16
46
34
D
55_C
V
= 50 Vdc, I = 150 mA, f = 1400 MHz
DQ
DD
V
= 50 Vdc, I = 150 mA, f = 1400 MHz
DQ
Pulse Width = 300 sec, Duty Cycle = 12%
DD
Pulse Width = 300 sec, Duty Cycle = 12%
22
0
1
2
3
4
5
6
50
100
400
P , INPUT POWER (WATTS) PEAK
in
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 10. Output Power versus Input Power
Figure 11. Power Gain and Drain Efficiency
versus Output Power
19
63
18
17
16
15
14
13
12
11
G
62
61
60
59
0
ps
D
-- 5
IRL
-- 1 0
-- 1 5
V
= 50 Vdc, I = 150 mA, P = 330 W Peak (39.6 W Avg.)
DQ out
DD
-- 2 0
-- 2 5
10
9
Pulse Width = 300 sec, Duty Cycle = 12%
1200 1225 1250 1275 1300 1325
1350 1375 1400
f, FREQUENCY (MHz)
Figure 12. Broadband Performance @ Pout = 330 Watts Peak
8
10
7
10
6
10
5
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 50 Vdc, P = 330 W Peak, Pulse Width = 300 sec,
DD
out
Duty Cycle = 12%, and = 60.5%.
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
6
Z = 10
o
f = 1400 MHz
f = 1400 MHz
Z
load
Z
source
f = 1200 MHz
f = 1200 MHz
V
= 50 Vdc, I = 150 mA, P = 330 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
1200
1300
1400
2.70 -- j4.10
4.93 -- j2.66
7.01 -- j2.87
2.97 -- j2.66
2.85 -- j2.40
3.17 -- j1.78
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 14. Series Equivalent Source and Load Impedance
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
7
PACKAGE DIMENSIONS
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
8
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
9
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
10
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2014
Initial Release of Data Sheet
MMRF1011HR5 MMRF1011HSR5
RF Device Data
Freescale Semiconductor, Inc.
12
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their
respective owners.
E 2014 Freescale Semiconductor, Inc.
Document Number: MMRF1011H
Rev. 0, 7/2014
相关型号：
©2020 ICPDF网 联系我们和版权申明