MMRF1017N [NXP]
RF Power LDMOS Transistor;
NXP 
Document Number: MMRF1017N
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MMRF1017NR3
This 80 W RF power LDMOS transistor is designed for wideband RF power
amplifiers covering the frequency range of 720 to 960 MHz.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 1400 mA, Pout = 80 W Avg., Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
720--960 MHz, 80 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
G
D
Output PAR ACPR
IRL
ps
Frequency
920 MHz
940 MHz
960 MHz
(dB)
20.0
20.1
20.0
(%)
35.9
36.2
36.1
(dB)
(dBc)
--38.0
--37.6
--37.5
(dB)
6.3
-- 1 4
-- 1 8
-- 1 7
6.2
6.1
Features
OM--780--2L
PLASTIC
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.
Gate
Drain
1
2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2014. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
--0.5, +65
--6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
--65 to +150
--40 to +150
--40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.31
C/W
JC
Case Temperature 80C, 80 W CW, 28 Vdc, I
= 1500 mA, 960 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Class
2
B
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 370 Adc)
V
V
1.0
1.7
0.1
1.5
2.2
2.0
2.7
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 32 Vdc, I = 1400 mA, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 3.6 Adc)
V
0.14
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1400 mA, P = 80 W Avg., f = 960 MHz,
DD
DQ
out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
19.0
33.5
5.6
—
20.0
36.1
6.1
22.0
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
dB
dBc
dB
--37.5
-- 1 7
--36.0
-- 1 0
—
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I = 1400 mA, f = 940 MHz
DQ
VSWR 10:1 at 32 Vdc, 416 W CW Output Power
(3 dB Input Overdrive from 280 W CW Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1400 mA, 920--960 MHz Bandwidth
DD
DQ
P
@ 1 dB Compression Point, CW
P1dB
VBW
—
—
280
60
—
—
W
out
VBW Resonance Point
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P = 80 W Avg.
G
—
—
0.1
—
—
dB
out
F
Gain Variation over Temperature
G
0.0156
dB/C
(--30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.006
—
dB/C
(--30C to +85C)
1. Part internally matched both on input and output.
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
3
C25
C14
C15
C3
C4
R1
R2
C17
C20
C8
C9
C16
C26*
C2
C10
C11
C24
C12
C13
C5
C21
C22
C1
C6
C7
C18
C23
C19
*C26 is mounted vertically.
Figure 2. MMRF1017NR3 Test Circuit Component Layout
Table 6. MMRF1017NR3 Test Circuit Component Designations and Values
Part
Description
62 pF Chip Capacitor
4.7 pF Chip Capacitors
Part Number
Manufacturer
ATC
C1
C2, C5, C10, C13
ATC100B620JT500XT
ATC600F4R7BT250XT
GRM32ER71H106KA12L
ATC600F470JT250XT
ATC600F3R9BT250XT
ATC600F2R4BT250XT
MCGPR63V477M13X26-RH
ATC100B360JT500XT
CRCW12066R04FKEA
—
ATC
C3, C7, C14, C15, C22, C23 10 F Chip Capacitors
Murata
ATC
C4, C6, C16, C17, C18, C19 47 pF Chip Capacitors
C8, C9, C11, C24
C12, C20, C21
C25
3.9 pF Chip Capacitors
ATC
2.4 pF Chip Capacitors
ATC
470 F, 63 V Electrolytic Capacitor
36 pF Chip Capacitor
Multicomp
ATC
C26
R1, R2
6.04 , 1/4 W Chip Resistor
Vishay
MTL
PCB
Rogers RO4350B, 0.020, = 3.66
r
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
23
22
21
20
19
18
17
16
15
14
13
38
34
D
V
DQ
= 28 Vdc, P = 80 W (Avg.)
out
30
DD
I
= 1400 mA, Single--Carrier W--CDMA
26
22
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
G
ps
-- 3 7
-- 3 8
-- 3 9
-- 4 0
-- 4 1
-- 4 2
-- 0
-- 1
-- 5
-- 1 . 2
-- 1 . 4
-- 1 . 6
-- 1 . 8
-- 2
PARC
IRL
-- 1 0
-- 1 5
-- 2 0
-- 2 5
ACPR
820
840
860
880
900
920
940
960
980
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 80 Watts Avg.
-- 1 0
V
= 28 Vdc, P = 320 W (PEP), I = 1400 mA
out DQ
DD
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 940 MHz
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--U
IM7--L
1
10
100
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
-- 2 0
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
22
21
20
19
18
17
16
1
0
50
V
= 28 Vdc, I = 1400 mA, f = 940 MHz
DQ
DD
D
Single--Carrier W--CDMA 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
45
ACPR
-- 1
-- 2
40
35
30
25
20
G
ps
-- 1 d B = 6 7 W
PARC
-- 2 d B = 9 5 W
-- 3
-- 4
--3 dB = 132 W
-- 5
50
70
90
110
130
150
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
22
60
0
V
= 28 Vdc, I = 1400 mA
DQ
960 MHz
940 MHz
920 MHz
DD
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth Input Signal
PAR = 7.5 dB @ 0.01%
21
20
19
18
17
16
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
50
40
30
20
10
0
D
Probability on CCDF
G
ps
960 MHz
ACPR
940 MHz
920 MHz
960 MHz
100
940 MHz
920 MHz
1
10
, OUTPUT POWER (WATTS) AVG.
300
P
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
23
20
10
V
P
= 28 Vdc
= 0 dBm
= 1400 mA
DD
in
21
19
17
I
DQ
0
Gain
-- 1 0
-- 2 0
-- 3 0
-- 4 0
15
IRL
13
11
700
800
900
1000 1100 1200
f, FREQUENCY (MHz)
1300 1400 1500
Figure 7. Broadband Frequency Response
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
6
V
= 28 Vdc, I = 1400 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DQ
DD
Max Output Power
P1dB
P3dB
Max
Linear
Gain (dB)
(1)
AM/PM
()
D
AM/PM
f
Z
Z
in
Z
load
D
source
(%)
53.5
54.4
53.9
(%)
58.2
57.6
57.8
()
(MHz)
()
()
()
(dBm)
56.0
(W)
396
391
391
(dBm) (W)
920
940
960
1.83 - j3.18
2.01 - j3.27
2.64 - j3.34
1.66 + j3.17
2.03 + j3.31
2.55 + j3.45
4.55 - j3.27
4.97 - j2.86
5.77 - j1.78
18.7
18.7
18.4
-8.0
-7.7
-7.9
56.9
56.9
56.9
494
490
488
-12
-11
-12
55.9
55.9
(1) Load impedance for optimum P1dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
Figure 8. Load Pull Performance — Maximum P1dB Tuning
V
= 28 Vdc, I = 1400 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DQ
DD
Max Drain Efficiency
P1dB
P3dB
Max
Linear
Gain (dB)
(1)
AM/PM
()
D
AM/PM
f
Z
Z
in
Z
load
D
source
(%)
66.2
66.6
67.4
(%)
69.6
70.1
70.6
()
(MHz)
()
()
()
(dBm)
53.5
(W)
225
215
230
(dBm) (W)
920
940
960
1.83 - j3.18
2.01 - j3.27
2.64 - j3.34
1.70 + j3.02
2.12 + j3.16
2.66 + j3.26
1.49 - j1.61
1.48 - j1.80
1.76 - j1.79
22.0
22.0
21.7
-15
-16
-15
54.3
54.0
54.3
267
248
269
-22
-24
-22
53.3
53.6
(1) Load impedance for optimum P1dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
7
P1dB -- TYPICAL LOAD PULL CONTOURS — 940 MHz
0
-- 0 . 5
-- 1
0
-- 0 . 5
-- 1
55.5
55
-- 1 . 5
-- 1 . 5
54.5
E
66
E
-- 2
-- 2 . 5
-- 3
-- 2
-- 2 . 5
-- 3
54
64 62
60
58
56
54
52 50
P
P
-- 3 . 5
-- 4
-- 3 . 5
-- 4
-- 4 . 5
-- 4 . 5
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
REAL ()
REAL ()
Figure 10. P1dB Load Pull Output Power Contours (dBm)
Figure 11. P1dB Load Pull Efficiency Contours (%)
0
0
-- 0 . 5
-- 0 . 5
-- 1
22
-- 1
21.5
-- 1 . 5
-- 1 . 5
E
E
21 20.5 20 19.5 19 18.5
18
-- 2
-- 2 . 5
-- 3
-- 2
-- 2 . 5
-- 3
-- 8
-- 1 6
-- 2 4
P
-- 1 4
P
-- 1 2 -- 1 0
-- 1 8
-- 3 . 5
-- 4
-- 3 . 5
-- 4
-- 2 0
-- 2 2
18.5
1
-- 4 . 5
-- 4 . 5
0
2
3
4
5
6
7
0
1
2
3
4
5
6
7
REAL ()
REAL ()
Figure 12. P1dB Load Pull Gain Contours (dB)
Figure 13. P1dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
8
P3dB -- TYPICAL LOAD PULL CONTOURS — 940 MHz
1
1
0
-- 1
-- 2
-- 3
-- 4
0
-- 1
55.5
56.5
56
E
E
P
P
68
-- 2
-- 3
-- 4
66
64
62
55
60
5
58
56
6
54
52
0
1
2
3
4
5
6
7
0
1
2
3
4
7
REAL ()
REAL ()
Figure 14. P3dB Load Pull Output Power Contours (dBm)
Figure 15. P3dB Load Pull Efficiency Contours (%)
1
0
1
-- 6
-- 8
0
-- 1
-- 2
-- 3
-- 4
-- 1 0
-- 1
20
17
16
16.5
17.5
18
18.5
19
-- 1 2
-- 1 4
-- 1 6
-- 1 8
19.5
E
E
P
P
-- 2
-- 3
-- 4
-- 2 2
2
-- 2 0
0
1
2
3
4
REAL ()
5
6
7
0
1
3
4
5
6
7
REAL ()
Figure 16. P3dB Load Pull Gain Contours (dB)
Figure 17. P3dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
10
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
11
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
12
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2014
Initial Release of Data Sheet
MMRF1017NR3
RF Device Data
Freescale Semiconductor, Inc.
13
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E 2014 Freescale Semiconductor, Inc.
Document Number: MMRF1017N
Rev. 0, 7/2014
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