MMRF1015GNR1 [NXP]
RF Power LDMOS Transistors;
| 型号： | MMRF1015GNR1 |
| 厂家： | 
NXP |
| 描述： | RF Power LDMOS Transistors |
| 文件： | 总20页 (文件大小：743K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMRF1015N
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for Class A or Class AB power amplifier applications with
frequencies up to 2000 MHz. Suitable for analog and digital modulation and
multicarrier amplifier applications.
MMRF1015NR1
MMRF1015GNR1
Typical Two--Tone Performance at 960 MHz: VDD = 28 Vdc, IDQ = 125 mA,
P
out = 10 W PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — --37 dBc
1--2000 MHz, 10 W, 28 V
CLASS A/AB
RF POWER MOSFETs
Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
On--Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
T O -- 2 7 0 -- 2
PLASTIC
MMRF1015NR1
225C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
TO--270G--2
PLASTIC
MMRF1015GNR1
Gate
Drain
1
2
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +68
--0.5, +12
--65 to +150
150
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
(Top View)
Gate--Source Voltage
V
GS
Note: Exposed backside of the package is
the source terminal for the transistor.
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
C
Figure 1. Pin Connections
(1,2)
T
J
225
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
2.85
C/W
JC
Case Temperature 80C, 10 W PEP
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2014. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
1A
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 100 Adc)
V
V
1.5
2
2.3
3.1
3
4
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 125 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 0.3 Adc)
V
0.15
0.27
0.35
GS
D
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
0.32
10
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
23
iss
(V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
(1)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 125 mA, P = 10 W PEP, f = 960 MHz, Two--Tone
DD DQ out
Test, 100 kHz Tone Spacing
Power Gain
G
17.5
31
18
32
20.5
—
dB
%
ps
D
Drain Efficiency
Intermodulation Distortion
Input Return Loss
IMD
IRL
—
-- 3 7
-- 1 8
-- 3 3
-- 1 0
dBc
dB
—
Typical Performance (In Freescale 450 MHz Demo Board, 50 hm system) V = 28 Vdc, I = 150 mA, P = 10 W PEP, 420--470 MHz,
DD
DQ
out
Two--Tone Test, 100 kHz Tone Spacing
Power Gain
G
—
20
33
—
—
—
—
dB
%
ps
Drain Efficiency
—
—
—
D
Intermodulation Distortion
Input Return Loss
IMD
-- 4 0
-- 1 0
dBc
dB
IRL
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
2
C11
C12
B1
V
V
BIAS
SUPPLY
+
+
+
+
+
C18
C19
C2
C4
C6
C7
C15
C3
C16
C10
C13
Z5
L1
RF
OUTPUT
R1
DUT
Z6
Z7
RF
INPUT
Z1
Z2
Z3
Z4
C20
C14
C17
C1
C5
C8
C9
Z1
Z2
Z3
Z4
0.073 x 0.223 Microstrip
0.112 x 0.070 Microstrip
0.213 x 0.500 Microstrip
0.313 x 1.503 Microstrip
Z5
Z6
Z7
0.313 x 0.902 Microstrip
0.073 x 1.080 Microstrip
0.073 x 0.314 Microstrip
PCB
Rogers ULTRALAM 2000, 0.031, = 2.55
r
Figure 2. MMRF1015NR1 Test Circuit Schematic — 900 MHz
Table 6. MMRF1015NR1 Test Circuit Component Designations and Values — 900 MHz
Part
Description
Part Number
2743019447
Manufacturer
Fair--Rite
B1
Ferrite Bead
C1, C6, C11, C20
C2, C18, C19
C3, C16
47 pF Chip Capacitors
ATC100B470JT500XT
T491D226K035AT
2222--136--68221
CDR33BX104AKWS
272915L
ATC
22 F, 35 V Tantalum Capacitors
220 F, 63 V Electrolytic Capacitors, Radial
0.1 F Chip Capacitors
Kemet
Vishay
Kemet
Johanson
ATC
C4, C15
C5, C8, C17
C7, C12
0.8--8.0 pF Variable Capacitors, Gigatrim
24 pF Chip Capacitors
ATC100B240JT500XT
ATC100B6R8JT500XT
ATC100B7R5JT500XT
A04T--5
C9, C10, C13
C14
6.8 pF Chip Capacitors
ATC
7.5 pF Chip Capacitor
ATC
L1
12.5 nH Inductor
Coilcraft
Vishay
R1
1 k 1/4 W Chip Resistor
CRCW12061001FKEA
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
C3
C18
C19
C7
C4
C16
C15
C10
C6
B1
C5
C2
C11
C13
C12
L1
R1
C20
C9
C1
C17
C14
C8
Figure 3. MMRF1015NR1 Test Circuit Component Layout — 900 MHz
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS — 900 MHz
-- 8
48
44
40
D
-- 1 0
-- 1 2
-- 1 4
-- 1 6
IRL
36
32
28
24
20
16
V
= 28 Vdc, P = 10 W (Avg.)
out
= 125 mA, 100 kHz Tone Spacing
DD
I
DQ
-- 1 8
-- 2 0
-- 2 2
IMD
G
ps
-- 2 4
-- 2 6
910
920
930
940
950
960
970
f, FREQUENCY (MHz)
Figure 4. Two--Tone Wideband Performance
@ Pout = 10 Watts
20
19
-- 1 0
I
= 190 mA
125 mA
DQ
V
= 28 Vdc, I = 125 mA
DD DQ
3rd Order
5th Order
f = 945 MHz, Two--Tone Measurements
100 kHz Tone Spacing
-- 2 0
-- 3 0
-- 4 0
-- 5 0
18
17
90 mA
7th Order
V
= 28 Vdc, f = 945 MHz
16
15
DD
-- 6 0
-- 7 0
Two--Tone Measurements
100 kHz Tone Spacing
0.1
1
10
100
0.1
1
10
100
P
, OUTPUT POWER (WATTS) AVG.
P
, OUTPUT POWER (WATTS) AVG.
out
out
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
-- 1 5
48
46
44
42
V
I
= 28 Vdc, P = 10 W (Avg.)
out
= 125 mA, Two--Tone Measurements
DD
Ideal
-- 2 0
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
-- 5 5
DQ
P3dB = 43.14 dBm (20.61 W)
(f1+f2)/2 = Center Frequency = 945 MHz
P1dB = 42.23 dBm (16.71 W)
3rd Order
Actual
5th Order
7th Order
V
= 28 Vdc, I = 125 mA
DQ
DD
40
38
Pulsed CW, 8 sec(on), 1 msec(off)
f = 945 MHz
19
21
23
25
27
29
0.1
1
10
100
TWO--TONE SPACING (MHz)
P , INPUT POWER (dBm)
in
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 900 MHz
50
40
30
20
-- 1 0
-- 2 0
-- 3 0
-- 4 0
V
= 28 Vdc
= 125 mA
DD
I
DQ
f = 945 MHz
G
ps
D
10
0
-- 5 0
--60
ACPR
0.1
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 9. Single--Carrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
20
50
-- 3 0 _C
25_C
85_C
T
= --30_C
C
G
19
18
17
16
15
40
30
20
10
0
ps
D
25_C
85_C
V
I
= 28 Vdc
DD
= 125 mA
DQ
f = 945 MHz
0.1
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain and Power Added
Efficiency versus Output Power
24
5
19
I
= 125 mA
DQ
f = 945 MHz
20
16
12
8
0
S21
S11
18
17
-- 5
--10
--15
16
15
V
P
= 28 Vdc
= 10 W CW
= 125 mA
DD
out
28 V
32 V
4
0
-- 2 0
-- 2 5
V
= 24 V
DD
I
DQ
0
2
4
6
8
10
12
14
16
500
600
700
800
900
1000
1100
1200
f, FREQUENCY (MHz)
P
, OUTPUT POWER (WATTS) CW
out
Figure 11. Power Gain versus Output Power
Figure 12. Broadband Frequency Response
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS
8
7
6
10
10
10
5
10
10
4
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 10 W PEP, and = 32%.
DD
out
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF Factor versus Junction Temperature
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
Z = 25
o
f = 980 MHz
f = 980 MHz
Z
source
Z
load
f = 800 MHz
f = 800 MHz
V
= 28 Vdc, I = 125 mA, P = 10 W PEP
DQ out
DD
f
Z
Z
load
source
MHz
800
820
840
860
880
900
920
940
960
980
3.1 + j1.9
2.8 + j1.7
10.1 + j2.3
8.3 + j2.5
8.2 + j3.3
9.8 + j4.8
10.6 + j5.6
9.5 + j5.5
10.1 + j5.9
11.0 + j6.4
11.8 + j6.6
12.1 + j7.1
2.7 + j2.2
3.1 + j3.4
3.3 + j3.8
2.9 + j3.7
2.8 + j4.4
3.0 + j4.7
3.2 + j4.9
3.6 + j5.2
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 14. Series Equivalent Source and Load Impedance — 900 MHz
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
8
T1
R1
V
BIAS
+
C1
R2
B1
B2
R5
V
SUPPLY
+
+
C13
C14
C15
C2
C3
C4
R3
T2
R4
R6
L1
RF
OUTPUT
DUT
Z6
Z7
Z8
RF
INPUT
Z1
Z2
Z3
Z4
Z5
C10
C12
C11
C9
C6
C5
C7
C8
Z1
Z2
Z3
0.540 x 0.080 Microstrip
0.365 x 0.080 Microstrip
0.225 x 0.080 Microstrip
0.440 x 0.080 Microstrip
Z5
Z6
Z8
0.475 x 0.330 Microstrip
0.475 x 0.325 Microstrip
1.250 x 0.080 Microstrip
Z4, Z7
PCB
Rogers ULTRALAM 2000, 0.030, = 2.55
r
Figure 15. MMRF1015NR1 Test Circuit Schematic — 450 MHz
Table 7. MMRF1015NR1 Test Circuit Component Designations and Values — 450 MHz
Part
Description
Part Number
2743019447
Manufacturer
B1, B2
C1
Ferrite Bead
Fair--Rite
1 F, 35 V Tantalum Capacitor
22 F, 35 V Tantalum Capacitors
0.1 F Chip Capacitors
330 pF Chip Capacitors
4.3 pF Chip Capacitor
0.6--8.0 pF Variable Capacitors
4.7 pF Chip Capacitors
39 H Chip Inductor
T491C105K050AT
T491X226K035AT
C1210C104K5RAC
ATC700A331JT150XT
ATC100B4R3JT500XT
27291SL
Kemet
C2, C15
C3, C14
Kemet
Kemet
C4, C9, C10, C13
ATC
C5
ATC
C6, C11
Johanson
ATC
C7, C8, C12
ATC100B4R7JT500XT
ISC--1210
L1
Vishay
R1
R2
R3
R4
R5
R6
T1
T2
10 Chip Resistor
CRCW080510R0FKEA
CRCW08051001FKEA
CRCW08051201FKEA
CRCW08052201FKEA
1224W
Vishay
1 k Chip Resistor
Vishay
1.2 k Chip Resistor
Vishay
2.2 k Chip Resistor
Vishay
5 k Potentiometer
Bourns
1 k Chip Resistor
CRCW12061001FKEA
LP2951CDMR2G
BC847ALT1G
Vishay
5 Volt Regulator, Micro 8
NPN Transistor, SOT--23
On Semiconductor
On Semiconductor
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
R2 R1
C1
R5
C4
T1
R3
C15
B1
B2
T2
R4
C3
C14
L1
C2
C13
C5
C6
C12
C11
C10
C9
R6
C7
C8
Figure 16. MMRF1015NR1 Test Circuit Component Layout — 450 MHz
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
10
TYPICAL CHARACTERISTICS — 450 MHz
20.4
20.2
20
37
34
31
28
25
-- 4 0
G
ps
19.8
D
V
DD
= 28 Vdc, P = 3 W (Avg.), I = 150 mA
out DQ
19.6
19.4
19.2
19
2--Carrier W--CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
-- 6
-- 9
-- 4 5
-- 5 0
-- 5 5
ACPR
IRL
-- 1 2
-- 1 5
-- 1 8
-- 2 1
18.8
18.6
18.4
ALT1
-- 6 0
-- 6 5
400 410 420 430 440 450 460 470 480 490 500
f, FREQUENCY (MHz)
Figure 17. 2--Carrier W--CDMA Broadband Performance @ Pout = 3 Watts Avg.
19
18.8
18.5
18.3
55
50
45
40
35
-- 3 0
G
ps
D
V
= 28 Vdc, P = 7.5 W (Avg.), I = 150 mA
out DQ
DD
18
17.8
17.5
17.3
2--Carrier W--CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
-- 4
-- 6
-- 3 5
-- 4 0
-- 4 5
-- 5 0
-- 5 5
ACPR
-- 8
IRL
-- 1 0
-- 1 2
-- 1 4
17
16.8
16.5
ALT1
400 410 420 430 440 450 460 470 480 490 500
f, FREQUENCY (MHz)
Figure 18. 2--Carrier W--CDMA Broadband Performance @ Pout = 7.5 Watts Avg.
30
25
20
15
0
-- 1 0
V
= 28 Vdc, I = 150 mA,
DQ
DD
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
f = 450 MHz, N--CDMA IS--95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
-- 5
S11
S21
ACPR
-- 1 0
ALT1
ALT2
-- 1 5
-- 2 0
-- 2 5
V
P
DQ
= 28 Vdc
= 10 W
= 150 mA
DD
out
10
5
-- 7 0
-- 8 0
I
0.1
1
10
50 100 150 200 250 300 350 400 450 500 550 600 650
P
, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
out
Figure 19. Broadband Frequency Response
Figure 20. Single--Carrier N--CDMA ACPR, ALT1
and ALT2 versus Output Power
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
11
Z = 25
o
f = 500 MHz
Z
source
f = 500 MHz
Z
load
f = 400 MHz
f = 400 MHz
V
= 28 Vdc, I = 150 mA, P = 10 W PEP
DQ out
DD
f
Z
Z
load
source
MHz
400
420
440
460
480
500
9.0 + j3.8
8.8 + j5.4
15.0 + j1.4
14.3 + j3.3
15.0 + j4.7
16.3 + j7.3
16.4 + j11.1
16.9 + j12.7
9.6 + j6.6
10.6 + j9.5
10.7 + j12.6
11.5 + j13.9
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 21. Series Equivalent Source and Load Impedance — 450 MHz
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
12
PACKAGE DIMENSIONS
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
14
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
16
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
18
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2014
Initial Release of Data Sheet
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
19
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E 2014 Freescale Semiconductor, Inc.
Document Number: MMRF1015N
Rev. 0, 7/2014
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