MMRF1013HR5 [NXP]
RF Power LDMOS Transistors;
| 型号： | MMRF1013HR5 |
| 厂家： | 
NXP |
| 描述： | RF Power LDMOS Transistors |
| 文件： | 总16页 (文件大小：896K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MMRF1013H
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
MMRF1013HR5
MMRF1013HSR5
N--Channel Enhancement--Mode Lateral MOSFETs
RF power transistors designed for aerospace and defense S--band radar
pulse applications operating at frequencies between 2700 and 3200 MHz.
Typical Pulse Performance: VDD = 30 Vdc, IDQ = 100 mA
P
(W)
f
G
(dB)
(%)
IRL
(dB)
out
ps
D
2700--2900 MHz, 320 W, 30 V
PULSE S--BAND
Signal Type
(MHz)
Pulse (100 sec,
10% Duty Cycle)
320 Peak
2900
13.3
50.5
-- 1 7
RF POWER MOSFETs
Capable of Handling 10:1 VSWR @ 32 Vdc, 2900 MHz, 320 W Peak Power,
300 sec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout
Features
)
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI--1230H--4S
MMRF1013HR5
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
NI--1230S--4S
MMRF1013HSR5
PARTS ARE PUSH--PULL
Gate A
Gate B
Drain A
Drain B
3
4
1
2
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +65
--6.0, +10
-- 65 to +150
150
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
(Top View)
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
Note: The backside of the package is the
source terminal for the transistors.
T
C
C
(1,2)
Figure 1. Pin Connections
T
J
225
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Z
C/W
JC
Case Temperature 61C, 320 W Peak, 300 sec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz
Case Temperature 69C, 320 W Peak, 500 sec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz
0.06
0.10
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2014. All rights reserved.
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2
A
IV
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Off Characteristics
Gate--Source Leakage Current
I
—
—
—
—
—
—
1
1
Adc
Adc
Adc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Zero Gate Voltage Drain Leakage Current
(V = 30 Vdc, V = 0 Vdc)
I
I
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
10
(V = 65 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(1)
Gate Threshold Voltage
(V = 10 Vdc, I = 345 Adc)
V
V
1.0
1.5
0.1
1.9
2.3
2.5
3.0
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
(2)
Gate Quiescent Voltage
(V = 30 Vdc, I = 100 mAdc, Measured in Functional Test)
DD
D
(1)
Drain--Source On--Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.18
GS
D
(1)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 30 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
2.53
470
264
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 30 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 30 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 30 Vdc, I = 100 mA, P = 320 W Peak (32 W Avg.),
DD DQ out
f = 2900 MHz, 100 sec Pulse Width, 10% Duty Cycle
Power Gain
G
12.0
47.0
—
13.3
50.5
-- 1 7
15.0
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
IRL
-- 9
dB
Typical Pulse RF Performance (In Freescale 2x3 Compact Test Fixture, 50 ohm system) V = 30 Vdc, I = 100 mA, P = 320 W
DD
DQ
out
Peak (32 W Avg.), 300 sec Pulse Width, 10% Duty Cycle
G
D
IRL
ps
Frequency
2700 MHz
2800 MHz
2900 MHz
(dB)
13.9
14.0
13.0
(%)
49.3
49.8
49.6
(dB)
-- 11
-- 1 8
-- 1 5
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
2
V
BIAS
Z22
R1
C20 C18 C14 C10 C3 C30
Z20 Z17
Z14
Z15 Z16
Z18 Z19
C1
C2
Z45
Z46
Z13
Z7
C31
RF
INPUT
DUT
Z1 Z2 Z3 Z4 Z5 Z6
Z8 Z9
Z11 Z12
R2
Z21 Z10
Z23
V
BIAS
C19 C15 C11 C7 C4 C29
V
SUPPLY
+
+
+
C26 C6
C33 C9 C13 C17
C27 C34 C35
Z47
RF
OUTPUT
Z28
Z29 Z30 Z31 Z32 Z33 Z34 Z35
Z42
Z40
Z43 Z44
Z41
C23
C24
Z24
Z25 Z26 Z27 Z36 Z37 Z38 Z39
Z48
V
SUPPLY
+
+
+
C25 C5
C32 C8 C12 C16
C21 C22 C28
Z33, Z37
Z34, Z38
Z35, Z39
Z40
Z41*
Z42*
0.112 x 0.232 Microstrip
0.158 x 0.152 Microstrip
0.058 x 0.065 Microstrip
0.505 x 0.065 Microstrip
0.917 x 0.065 Microstrip
0.092 x 0.065 Microstrip
0.695 x 0.111 Microstrip
0.479 x 0.065 Microstrip
Z1*
Z2
Z3
Z4
Z5
Z6
Z7*
Z8, Z15
Z9, Z16
0.865 x 0.065 Microstrip
0.100 x 0.110 Microstrip
0.075 x 0.065 Microstrip
0.146 x 0.111 Microstrip
0.325 x 0.204 Microstrip
0.224 x 0.111 Microstrip
0.121 x 0.065 Microstrip
0.030 x 0.065 Microstrip
0.284 x 0.165 Microstrip
Z11, Z18
Z12, Z19
Z13*
0.135 x 0.620 Microstrip
0.120 x 0.620 Microstrip
0.957 x 0.065 Microstrip
0.495 x 0.065 Microstrip
Z14
Z20, Z21, Z45, Z46 0.055 x 0.100 Microstrip
Z22, Z23*
Z24, Z28
Z25, Z29
Z26, Z30
Z27, Z31
Z32, Z36
0.554 x 0.060 Microstrip
0.202 x 0.610 Microstrip
0.166 x 0.560 Microstrip
0.200 x 0.622 Microstrip
0.088 x 0.331 Microstrip
0.247 x 0.098 Microstrip
Z43
Z44*
Z47, Z48* 0.409 x 0.100 Microstrip
Z10, Z17 0.105 x 0.620 Microstrip
* Line length includes microstrip bends
Figure 2. MMRF1013HR5(HSR5) Test Circuit Schematic
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
3
C27
C13
C34
C17
C18
C10
C30
C14
C3
C6
C9
C33
C26
C35
C20
R1
C1
C23
C31
R2
C24
C12
C2
C19
C5 C32 C8
C25
C21
C11
C4
C7
C29
C15
C16
C22
C28
Figure 3. MMRF1013HR5(HSR5) Test Circuit Component Layout
Table 5. MMRF1013HR5(HSR5) Test Circuit Component Designations and Values
Part
Description
Part Number
ATC600F3R3BT250XT
ATC600F180JT250XT
ATC100B5R1BT250XT
ATC100B101JT500XT
ATC100B102JT50XT
GRM32ER72A105KA01L
C5750KF1H226ZT
Manufacturer
C1, C2
C3, C4
3.3 pF Chip Capacitors
ATC
18 pF Chip Capacitors
5.1 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
1 F Chip Capacitors
22 F Chip Capacitors
ATC
ATC
ATC
ATC
C5, C6, C25, C26, C29, C30
C7, C8, C9, C10
C11, C12, C13, C14
C15, C16, C17, C18
C19, C20
Murata
TDK
C21, C22, C27, C28, C34, C35 470 F, 63 V Electrolytic Capacitors
MCGPR63V477M16X32--RH
ATC600F5R1CT500XT
ATC100B0R5BT500XT
C3225JB2A105KT
Multicomp
ATC
C23, C24
C31
5.1 pF Chip Capacitors
0.5 pF Chip Capacitor
1 F Chip Capacitors
5 Chip Resistors
ATC
C32, C33
R1, R2
PCB
TDK
CRCW08055R00JNEA
RF35A2
Vishay
Taconic
0.030, = 3.5
r
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
1000
100
10
C
oss
60
59
Ideal
P3dB = 55.16 dBm (328 W)
P2dB = 54.82 dBm (303 W)
P1dB = 54.19 dBm (263 W)
C
iss
58
57
56
Measured with 30 mV(rms)ac @ 1 MHz
= 0 Vdc
Actual
V
GS
55
54
53
52
51
50
C
rss
V
= 30 Vdc, I = 100 mA, f = 2900 MHz
DQ
DD
1
Pulse Width = 300 sec, Duty Cycle = 10%
0
4
8
12
16
20
24
28
32
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
35
36
37
38
39
40
41
42
43
44 45
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
P , INPUT POWER (dBm) PEAK
in
Figure 5. Output Power versus Input Power
15
14.5
14
55
16
I
= 100 mA, f = 2900 MHz
DQ
Pulse Width = 300 sec
50
45
15
14
13
12
11
G
Duty Cycle = 10%
ps
13.5
13
40
35
D
32 V
V
= 30 Vdc
= 100 mA
30 V
DD
12.5
12
30
25
20
I
DQ
28 V
f = 2900 MHz
Pulse Width = 300 sec
Duty Cycle = 10%
26 V
= 24 V
V
DD
11.5
10
30
100
, OUTPUT POWER (WATTS) PEAK
500
0
100
200
300
400
P
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 7. Power Gain versus Output Power
Figure 6. Power Gain and Drain Efficiency
versus Output Power
17
16
15
14
13
12
11
10
9
55
16
15
14
13
12
-- 3 0 _C
25_C
85_C
1000 mA
500 mA
50
45
40
35
G
ps
T
= --30_C
C
25_C
30
25
200 mA
85_C
V
= 30 Vdc
DD
f = 2900 MHz
Pulse Width = 300 sec
Duty Cycle = 10%
V
= 30 Vdc, I = 100 mA, f = 2900 MHz
DD DQ
Pulse Width = 300 sec, Duty Cycle = 10%
20
15
I
= 100 mA
DQ
D
20
100
500
0
100
200
300
400
P
, OUTPUT POWER (WATTS) PEAK
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 8. Power Gain versus Output Power
Figure 9. Power Gain and Drain Efficiency
versus Output Power
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
400
300
200
100
0
T
= --30_C
C
25_C
85_C
V
= 30 Vdc, I = 100 mA, f = 2900 MHz
DQ
DD
Pulse Width = 300 sec, Duty Cycle = 10%
0
4
8
12
16
20
24
P , INPUT POWER (WATTS) PEAK
in
Figure 10. Output Power versus Input Power
-- 8
15
14.5
14
53
52
G
ps
-- 1 0
-- 1 2
-- 1 4
-- 1 6
-- 1 8
-- 2 0
IRL
51
50
49
48
47
D
13.5
13
V
I
= 30 Vdc
= 100 mA
DD
DQ
Pulse Width = 300 sec
Duty Cycle = 10%
12.5
12
2700
2750
2800
f, FREQUENCY (MHz)
2850
2900
Figure 11. Power Gain, Drain Efficiency and Input
Return Loss versus Frequency
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS
9
8
10
10
7
6
5
10
10
10
4
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 30 Vdc, P = 320 W Peak, Pulse Width = 300 sec,
DD
out
Duty Cycle = 10%, and = 45%.
D
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
7
Z = 10
o
f = 2900 MHz
f = 2700 MHz
f = 2900 MHz
Z
load
Z
source
f = 2700 MHz
V
= 30 Vdc, I = 100 mA, P = 320 W Peak
DQ out
DD
f
Z
Z
load
source
MHz
2700
2800
2900
4.7 -- j2.0
4.7 -- j1.7
4.7 -- j1.5
7.8 -- j1.0
8.7 -- j0.2
9.4 -- j0.7
Z
Z
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
=
Test circuit impedance as measured from
drain to drain, balanced configuration.
load
Device
Under
Test
Output
Matching
Network
Input
Matching
Network
+
--
--
+
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
8
C11
C13
R1
V
GS
C5
C7
C9
V
C3
DS
C2
C1
R3
R4
V
GS
V
C4
DS
C8
C10
C6
R2
C14
C12
Figure 14. MMRF1013HR5(HSR5) 2 3 Compact Test Circuit Component Layout
Table 6. MMRF1013HR5(HSR5) 2 3 Compact Test Circuit Component Designations and Values
Part
Description
Part Number
ATC100A4R7BT150XT
T491D476K016AT
Manufacturer
C1, C2
C3, C4
4.7 pF Chip Capacitors
ATC
47 F, 16 V Tantalum Capacitors
100 pF Chip Capacitors
Kemet
ATC
C5, C6, C11, C12
C7, C8, C9, C10
C13, C14
ATC100B101JT500XT
ATC100A150JT150XT
MCGPR63V477M13X26--RH
CRCW120610R0JNEA
RO3010
15 pF Chip Capacitors
ATC
470 F, 63 V Electrolytic Capacitors
10 Chip Resistors
Multicomp
Vishay
Rogers
R1, R2, R3, R4
PCB
0.050, = 10.2
r
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
9
TYPICAL CHARACTERISTICS — 2 3 COMPACT TEST FIXTURE
59
P3dB = 55.4 dBm (347 W)
P2dB = 55 dBm (316 W)
P1dB = 54.3 dBm (269 W)
Ideal
58
57
56
55
54
53
52
51
50
49
Actual
V
= 30 Vdc, I = 100 mA, f = 2900 MHz
DQ
DD
Pulse Width = 300 sec, Duty Cycle = 10%
34
35
36
37
38
39
40
41
42
43 44
P , INPUT POWER (dBm) PEAK
in
Figure 15. Output Power versus Input Power
15.5
15
55
50
45
V
= 30 Vdc, I = 100 mA, f = 2900 MHz
DQ
DD
Pulse Width = 300 sec, Duty Cycle = 10%
G
ps
14.5
14
40
35
13.5
13
D
30
25
20
12.5
12
30
100
, OUTPUT POWER (WATTS) PEAK
500
P
out
Figure 16. Power Gain and Drain Efficiency
versus Output Power
-- 5
15
14.5
14
53
52
V
= 30 Vdc, I = 100 mA, P = 320 W
DQ out
DD
Pulse Width = 300 sec, Duty Cycle = 10%
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 0
-- 3 5
G
ps
IRL
51
50
49
48
47
13.5
13
D
12.5
12
2700
2750
2800
f, FREQUENCY (MHz)
2850
2900
Figure 17. Power Gain, Drain Efficiency and Input
Return Loss versus Frequency
MMRF1013HR5 MMRF1013HSR5
10
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
11
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
12
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
13
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
14
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2014
Initial Release of Data Sheet
MMRF1013HR5 MMRF1013HSR5
RF Device Data
Freescale Semiconductor, Inc.
15
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E 2014 Freescale Semiconductor, Inc.
Document Number: MMRF1013H
Rev. 0, 7/2014
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