MMRF1014N [NXP]
RF Power LDMOS Transistor;
NXP 
Document Number: MMRF1014N
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for Class A or Class AB power amplifier applications with
frequencies up to 2000 MHz. Suitable for analog and digital modulation and
multicarrier amplifier applications.
MMRF1014NT1
Typical Two--Tone Performance @ 1960 MHz, 28 Vdc, IDQ = 50 mA,
Pout = 4 W PEP
1--2000 MHz, 4 W, 28 V
CLASS A/AB
RF POWER MOSFET
Power Gain — 18 dB
Drain Efficiency — 33%
IMD — --34 dBc
Typical Two--Tone Performance @ 900 MHz, 28 Vdc, IDQ = 50 mA,
Pout = 4 W PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — --39 dBc
Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
PLD--1.5
PLASTIC
On--Chip RF Feedback for Broadband Stability
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7--inch Reel.
Gate
Drain
Note: The center pad on the backside of
the package is the source terminal
for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
Unit
Vdc
Vdc
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
C
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
C/W
JC
Case Temperature 76C, 4 W PEP, Two--Tone
Case Temperature 79C, 4 W CW
8.8
8.5
Table 3. ESD Protection Characteristics
Test Methodology
Class
1C
A
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
IV
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2014. All rights reserved.
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
10
Adc
Adc
nAdc
DSS
DSS
GSS
(V = 68 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
500
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 50 mAdc)
V
V
1.2
—
2
2.7
3
2.7
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 50 mAdc)
DS
D
(1)
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 50 mAdc, Measured in Functional Test)
V
2.2
—
4.2
0.37
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 50 mAdc)
V
0.27
GS
D
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
21
25
30
—
—
—
pF
pF
pF
rss
GS
Output Capacitance
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac @ 1 MHz)
DS
GS
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 50 mA, P = 4 W PEP, f1 = 1960 MHz,
DD
DQ
out
f2 = 1960.1 MHz, Two--Tone Test
Power Gain
G
16.5
18
33
20
—
dB
%
ps
D
Drain Efficiency
28
—
—
Intermodulation Distortion
Input Return Loss
IMD
IRL
-- 3 4
-- 1 2
-- 2 8
-- 1 0
dBc
dB
Typical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) V = 28 Vdc, I = 50 mA, P = 4 W PEP,
DD
DQ
out
f = 900 MHz, Two--Tone Test, 100 kHz Tone Spacing
Power Gain
G
—
19
—
—
—
—
dB
%
ps
Drain Efficiency
—
—
—
33
D
Intermodulation Distortion
IMD
-- 3 9
-- 1 2
dBc
dB
Input Return Loss
IRL
11
1. V
=
/
x V
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
GS(Q)
GG
10
Refer to Test Circuit Schematic.
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
2
R1
V
SUPPLY
V
BIAS
+
R2
Z5
R3
C8
C1
C7
C3
C4
C5
Z10
RF
OUTPUT
Z6
Z7
Z8
Z9
RF
INPUT
Z1
Z2
Z3
Z4
C6
C2
DUT
Z1
Z2
Z3
Z4
Z5
Z6
0.054 x 0.430 Microstrip
0.054 x 0.137 Microstrip
0.580 x 0.420 Microstrip
0.580 x 0.100 Microstrip
0.025 x 0.680 Microstrip
0.210 x 0.100 Microstrip
Z7
Z8
Z9
Z10
PCB
0.210 x 1.220 Microstrip
0.054 x 0.680 Microstrip
0.054 x 0.260 Microstrip
0.025 x 0.930 Microstrip
Arlon CuClad 250GX--0300--55--22, 0.020, = 2.5
r
Figure 2. MMRF1014NT1 Test Circuit Schematic
Table 6. MMRF1014NT1 Test Circuit Component Designations and Values
Part
Description
100 nF Chip Capacitor
Part Number
CDR33BX104AKYS
ATC100B9R1CT500XT
GRM55DR61H106KA88B
T490D106K035AT
Manufacturer
Kemet
C1
C2, C3, C6, C7
9.1 pF Chip Capacitors
ATC
C4, C5
C8
10 F, 50 V Chip Capacitors
10 F, 35 V Tantalum Chip Capacitor
1 k, 1/4 W Chip Resistor
10 k, 1/4 W Chip Resistor
10 , 1/4 W Chip Resistor
Murata
Kemet
Vishay
Vishay
Vishay
R1
CRCW12061001FKEA
CRCW12061002FKEA
CRCW120610R0FKEA
R2
R3
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
3
25
C7
C3
C1
R1
C4
C5
R2
C8
R3
C2
C6
Figure 3. MMRF1014NT1 Test Circuit Component Layout
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
18.4
18.2
34
33
32
31
30
-- 3 0
D
18
17.8
17.6
17.4
17.2
17
G
ps
V
I
= 28 Vdc, P = 2 W (Avg.)
out
= 50 mA, 100 kHz Tone Spacing
DD
-- 8
DQ
-- 3 1
-- 3 2
-- 3 3
-- 3 4
-- 3 5
-- 1 2
-- 1 6
-- 2 0
-- 2 4
-- 2 8
IRL
16.8
16.6
16.4
IM3
1960
f, FREQUENCY (MHz)
1930
1940
1950
1970
1980
1990
Figure 4. Two--Tone Wideband Performance
@ Pout = 2 Watts Avg.
20
19
18
17
16
-- 1 0
I
= 75 mA
DQ
V
= 28 Vdc, I = 50 mA
DQ
DD
f1 = 1960 MHz, f2 = 1960.1 MHz
Two--Tone Measurements
-- 2 0
-- 3 0
62.5 mA
50 mA
-- 4 0
-- 5 0
37.5 mA
3rd Order
5th Order
-- 6 0
25 mA
V
= 28 Vdc
DD
15
14
-- 7 0
-- 8 0
f1 = 1960 MHz, f2 = 1960.1 MHz
Two--Tone Measurements
7th Order
0.01
0.1
1
10 20
0.01
0.1
1
10
P
, OUTPUT POWER (WATTS) PEP
P
, OUTPUT POWER (WATTS) PEP
out
out
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
-- 2 5
-- 3 0
47
45
43
41
39
Ideal
P6dB = 38.73 dBm (7.465 W)
P3dB = 38.22 dBm (6.637 W)
V
= 28 Vdc, P = 2 W (Avg.), I = 50 mA
out DQ
DD
(f1 + f2)/2 = Center Frequency of 1960 MHz
-- 3 5
-- 4 0
-- 4 5
3rd Order
P1dB = 37.61 dBm (5.768 W)
Actual
5th Order
7th Order
37
-- 5 0
-- 5 5
-- 6 0
V
= 28 Vdc, I = 50 mA
DQ
DD
35
33
Pulsed CW, 8 sec(on), 1 msec(off)
f = 1960 MHz
14
16
18
20
22
24
26
0.1
1
10
100
TWO--TONE SPACING (MHz)
P , INPUT POWER (dBm)
in
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
50
40
30
20
-- 2 0
-- 3 0
-- 4 0
-- 5 0
V
= 28 Vdc, I = 50 mA
DQ
DD
f = 1960 MHz, N--CDMA IS--95 (Pilot, Sync,
Paging, Traffic Codes 8 Through 13)
G
ps
ACPR
10
0
-- 6 0
--70
D
0.01
0.1
1
10
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 9. Single--Carrier CDMA ACPR, Power Gain
and Drain Efficiency versus Output Power
20
60
-- 3 0 _C
T
= --30_C
C
G
ps
50
40
30
20
10
0
19
18
17
16
15
14
25_C
85_C
85_C
V
= 28 Vdc
= 50 mA
f = 1960 MHz
DD
I
DQ
D
0.01
0.1
1
10
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
22
0
19
I
= 50 mA
DQ
18.5
f = 1960 MHz
-- 5
20
18
16
18
17.5
17
S21
-- 1 0
-- 1 5
-- 2 0
-- 2 5
16.5
16
15.5
15
V
P
= 28 Vdc
= 2 W CW
= 50 mA
DD
out
14
12
S11
I
V
= 24 V
DQ
DD
32 V
28 V
0
1
2
3
4
5
6
7
8
1800
1850
1900
1950
2000
2050
2100
f, FREQUENCY (MHz)
P
, OUTPUT POWER (WATTS) CW
out
Figure 11. Power Gain versus Output Power
Figure 12. Broadband Frequency Response
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
6
f = 1990 MHz
Z
load
Z = 10
o
f = 1930 MHz
f = 1990 MHz
Z
source
f = 1930 MHz
V
= 28 Vdc, I = 50 mA, P = 4 W PEP
DQ out
DD
f
Z
Z
load
source
MHz
1930
1960
1990
1.96 -- j5.34
1.89 -- j5.10
1.82 -- j4.85
8.78 + j6.96
8.93 + j7.46
9.11 + j7.97
Z
Z
=
Test circuit impedance as measured from
gate to ground.
source
=
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 13. Series Equivalent Source and Load Impedance
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
7
Table 7. Common Source S--Parameters (V = 28 Vdc, I = 50 mA, T = 25C, 50 Ohm System)
DD
DQ
A
S
S
S
S
22
f
11
21
12
MHz
|S
|
11
|S
|
21
|S
|
12
|S |
22
500
550
0.649
0.695
0.733
0.770
0.800
0.827
0.848
0.866
0.882
0.895
0.907
0.916
0.923
0.929
0.935
0.938
0.942
0.945
0.948
0.951
0.953
0.954
0.955
0.956
0.957
0.957
0.958
0.959
0.959
0.960
0.959
0.959
0.958
0.958
0.957
0.957
0.955
0.954
0.953
0.953
--116.340
--121.680
--126.560
--131.340
--135.740
--140.030
--143.950
--147.690
--151.140
--154.560
--157.590
--160.540
--163.310
--165.930
--168.430
--170.770
--173.030
--175.140
--177.170
--179.090
179.030
177.270
175.570
173.980
172.350
170.800
169.340
167.920
166.510
165.200
163.800
162.420
161.170
159.840
158.560
157.160
155.870
154.510
153.120
151.730
7.902
7.502
7.111
6.699
6.302
5.922
5.552
5.220
4.891
4.597
4.315
4.060
3.819
3.601
3.398
3.210
3.036
2.875
2.728
2.590
2.464
2.347
2.240
2.139
2.047
1.958
1.879
1.806
1.736
1.668
1.611
1.555
1.504
1.456
1.412
1.372
1.334
1.300
1.268
1.238
105.420
98.790
92.380
86.290
80.450
74.850
69.630
64.580
59.970
55.490
51.240
47.170
43.340
39.650
36.110
32.740
29.490
26.360
23.330
20.440
17.640
14.920
12.320
9.740
0.056
0.053
0.049
0.045
0.041
0.038
0.035
0.032
0.029
0.026
0.024
0.022
0.020
0.018
0.017
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.008
0.007
0.007
0.006
0.006
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.005
--73.750
--80.570
--87.010
--93.280
--99.120
--104.850
--110.110
--115.220
--119.960
--124.790
--129.090
--133.370
--137.460
--141.440
--145.330
--149.540
--153.430
--157.460
--161.910
--166.180
--170.630
--174.890
179.950
173.920
167.710
161.810
155.370
148.940
142.630
136.740
129.910
123.810
118.200
112.740
108.460
103.840
99.310
0.548
0.593
0.632
0.669
0.701
0.727
0.750
0.770
0.786
0.800
0.813
0.824
0.833
0.840
0.847
0.851
0.856
0.859
0.863
0.866
0.869
0.872
0.875
0.877
0.880
0.882
0.884
0.886
0.887
0.888
0.890
0.891
0.892
0.893
0.894
0.896
0.896
0.897
0.898
0.899
--33.570
--41.480
600
--48.890
650
--56.000
700
--62.810
750
--69.290
800
--75.350
850
--81.130
900
--86.570
950
--91.730
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
--96.660
--101.340
--105.790
--110.050
--114.170
--118.060
--121.880
--125.520
--129.020
--132.390
--135.650
--138.760
--141.750
--144.650
--147.480
--150.180
--152.760
--155.230
--157.580
--160.050
--162.070
--164.190
--166.140
--168.060
--169.840
--171.610
--173.260
--174.830
--176.390
7.250
4.810
2.440
0.260
--1.980
--4.310
--6.240
--8.290
--10.270
--12.210
--14.130
--16.010
--17.870
--19.700
--21.510
--23.250
95.360
91.030
87.460
--177.840
(continued)
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
8
Table 7. Common Source S--Parameters (V = 28 Vdc, I = 50 mA, T = 25C, 50 Ohm System) (continued)
DD
DQ
A
S
S
S
S
22
f
11
21
12
MHz
|S
|
11
|S
|
21
|S
|
12
|S |
22
2500
2550
2600
2650
2700
2750
2800
2850
2900
2950
3000
0.952
0.950
0.949
0.948
0.944
0.944
0.943
0.941
0.940
0.938
0.937
150.340
149.010
147.380
145.920
144.200
142.790
141.020
139.410
137.640
135.900
133.860
1.211
1.187
1.166
1.144
1.121
1.105
1.088
1.073
1.058
1.045
1.032
--25.120
--26.920
--28.650
--30.420
--32.310
--34.230
--36.000
--37.870
--39.760
--41.680
--43.610
0.006
0.006
0.006
0.007
0.007
0.007
0.007
0.007
0.008
0.008
0.008
84.160
80.780
77.880
74.670
71.360
67.980
63.950
61.230
59.810
58.280
56.740
0.899
0.897
0.897
0.898
0.896
0.897
0.897
0.896
0.896
0.896
0.895
--179.270
179.420
178.120
176.840
175.480
174.060
172.930
171.630
170.330
169.040
167.510
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
9
0.146
3.71
0.095
2.41
0.115
2.92
0.115
2.92
0.020
0.51
inches
mm
Figure 14. Solder Footprint for PLD--1.5
M1014
N( )QQ
YYWW
Figure 15. Product Marking
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
10
PACKAGE DIMENSIONS
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
11
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
12
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2014
Initial Release of Data Sheet
MMRF1014NT1
RF Device Data
Freescale Semiconductor, Inc.
14
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E 2014 Freescale Semiconductor, Inc.
Document Number: MMRF1014N
Rev. 0, 7/2014
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