BU2725DF [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU2725DF |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1700
12
30
45
1.0
-
V
A
Collector current (DC)
-
-
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
A
Ptot
VCEsat
ICsat
ts
Ths ≤ 25 ˚C
-
-
W
V
IC = 7.0 A; IB = 1.75 A
f = 16 kHz
7.0
1.5
A
ICsat = 7.0 A; f = 16 kHz
2
µs
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
case
base
2
collector
emitter
b
3
Rbe
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1700
12
V
A
Collector current (DC)
Collector current peak value
Base current (DC)
-
ICM
-
30
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
12
20
A
A
mA
A
W
˚C
˚C
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
average over any 20 ms period
-
200
9
-
-
Ths ≤ 25 ˚C
45
-65
-
150
150
Junction temperature
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VC
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 kΩ)
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-hs
Rth j-a
Junction to heatsink
Junction to heatsink
Junction to ambient
without heatsink compound
with heatsink compound
in free air
-
-
3.7
2.8
-
K/W
K/W
K/W
35
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
BVEBO
REB
VCEsat
VBEsat
VF
hFE
hFE
Emitter cut-off current
VEB = 7.5 V; IC = 0 A
IB = 1 mA
-
110
13.5
70
-
-
mA
V
Emitter-base breakdown voltage
Base-emitter resistance
7.5
VEB = 7.5 V
Ω
V
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.75 A
-
-
1.0
0.95
2.2
-
Base-emitter saturation voltage
Diode forward voltage
DC current gain
IC = 7.0 A; IB = 1.75 A
IF = 7 A
IC = 1 A; VCE = 5 V
IC = 7 A; VCE = 1 V
0.78
0.86
1.4
19
V
V
-
3.8
5.8
7.8
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (16 kHz line
deflection circuit)
ICsat = 7.0 A; LC = 650 µH; Cfb = 18 nF;
VCC = 162 V; IB(end) = 1.3 A; LB = 2 µH;
-VBB = 4 V;
ts
tf
Turn-off storage time
Turn-off fall time
1.5
0.14
2
0.3
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DF
ICsat
+ 150 v nominal
adjust for ICsat
TRANSISTOR
IC
IB
DIODE
t
t
Lc
IBend
D.U.T.
20us
26us
64us
LB
IBend
-VBB
Cfb
VCE
Rbe
t
Fig.1. Switching times waveforms (16 kHz).
Fig.3. Switching times test circuit.
ICsat
90 %
hFE
100
10
1
VCE = 5 V
Ths = 25 C
Ths = 85 C
IC
10 %
tf
t
ts
IB
IBend
t
0.01
0.1
1
10
100
- IBM
IC / A
Fig.2. Switching times definitions.
Fig.4. DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DF
VBEsat / V
hFE
1
0.9
0.8
0.7
0.6
100
10
1
VCE = 1 V
IC = 6 A
Ths = 25 C
Ths = 85 C
4 A
Ths = 85 C
Ths = 25 C
0.01
0.1
1
10
100
0
1
2
3
4
IC / A
IB / A
Fig.5. DC current gain. hFE = f (IC)
Parameter Ths
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
(Low and high gain)
ts/tf/ us
VCEsat / V
10
9
8
7
6
5
4
3
2
1
0
10
1
Ths = 85 C
Ths = 25 C
IC/IB = 12
IC/IB = 5
0.1
0.01
0.1
1
10
100
0
1
2
3
4
IB / A
IC / A
Fig.6. Typical collector-emitter saturation voltage.
CEsat = f (IC); parameter IC/IB
Fig.8. Limit storage and fall time.
ts = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz
V
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DF
Normalised Power Derating
VCC
PD%
120
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
LC
VCL
CFB
IBend
-VBB
LB
T.U.T.
0
20
40
60
80
Ths /
100
120
140
C
Fig.11. Test Circuit RBSOA.
VCC = 150 V; -VBB = 1 - 4 V;
LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH;
CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A
Fig.9. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Ths)
Zth / (K/W)
0.5
IC / A
10
1
35
30
25
20
15
10
5
0.2
0.1
0.05
Area where
fails occur
0.1
0.02
t
T
p
t
p
P
D =
D
0.01
0.001
t
D = 0
T
0
1E-06
1E-04
1E-02
t / s
1E+00
100
1000
1700
VCE / V
Fig.10. Transient thermal impedance.
th j-hs = f(t); parameter D = tp/T
Fig.12. Reverse bias safe operating area. Tj ≤ Tjmax
Z
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DF
MECHANICAL DATA
Dimensions in mm
15.3 max
5.2 max
Net Mass: 5.5 g
3.1
3.3
0.7
7.3
3.2
o
45
6.2
5.8
21.5
max
seating
plane
3.5 max
not tinned
3.5
15.7
min
1
2
3
1.2
1.0
0.7 max
2.0
2.1 max
M
0.4
5.45
5.45
Fig.13. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.100
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