BU2727AW [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BU2727AW |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection
circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
1700V.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1700
825
12
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
30
A
Ptot
T
mb ≤ 25 ˚C
-
125
1.0
-
W
V
VCEsat
ICsat
ts
IC = 5.0 A; IB = 0.91 A
-
5.0
2.2
A
ICM = 5.0 A; IB(end) = 0.9 A
tbf
µs
PINNING - SOT429
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
base
2
collector
emitter
b
3
tab collector
2
1
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1700
825
12
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
-
30
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
12
25
200
25
125
150
150
A
Base current peak value
Reverse base current
-
A
average over any 20 ms period
-
mA
A
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
-
Tmb ≤ 25 ˚C
W
˚C
˚C
-65
-
Junction temperature
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VC
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 kΩ)
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
-
-
1.0
-
K/W
K/W
in free air
45
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
VEB = 7.5 V; IC = 0 A
IB = 1 mA
-
-
13.5
-
1.0
-
-
mA
V
V
7.5
825
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
VCEsat
VBEsat
hFE
Collector-emitter saturation voltage IC = 5.0 A; IB = 0.91 A
-
-
0.86
22
8
1.0
0.95
35
V
V
Base-emitter saturation voltage
DC current gain
IC = 5.0 A; IB = 0.91 A
IC = 0.1 A; VCE = 5 V
IC = 5 A; VCE = 1 V
0.78
12
hFE
5.5
11
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (64 kHz line
deflection circuit)
ICM = 5.0 A; LC = 260 µH; Cfb = 4.8 nF;
VCC = 180 V; IB(end) = 0.9 A;
LB = 0.6 µH; -VBB = 2 V;
(-dIB/dt = 3.33 A/µs)
ts
tf
Turn-off storage time
Turn-off fall time
2.2
tbf
tbf
tbf
µs
µs
IC / mA
+ 50v
100-200R
250
200
Horizontal
Oscilloscope
100
Vertical
1R
100R
0
min
6V
VCE / V
30-60 Hz
VCEOsust
Fig.1. Test circuit for VCEOsust
.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
ICsat
+ 150 v nominal
adjust for ICsat
TRANSISTOR
I
C
B
DIODE
t
t
Lc
I
I
end
B
5 us
6.5 us
16 us
LB
T.U.T.
IBend
-VBB
Cfb
V
CE
t
Fig.3. Switching times waveforms (64 kHz).
Fig.5. Switching times test circuit.
ICsat
90 %
hFE
100
VCE = 5 V
Tmb = 25 C
Tmb = 85 C
IC
10 %
10
tf
t
ts
IB
IBend
t
1
0.01
0.1
1
10
100
- IBM
IC / A
Fig.4. Switching times definitions.
Fig.6. DC current gain. hFE = f (IC)
Parameter Tmb
(Low and high gain)
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
Normalised Power Derating
PD%
hFE
120
110
100
90
80
70
60
50
40
30
20
10
0
100
10
1
VCE = 1 V
Tmb = 25 C
Tmb = 85 C
0
20
40
60
80
Tmb /
100
120
140
0.01
0.1
1
10
100
C
IC / A
Fig.7. DC current gain. hFE = f (IC)
Parameter Tmb
Fig.10. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Tmb)
(Low and high gain)
Zth / (K/W)
VCEsat / V
10
1
10
1
Tmb = 85 C
Tmb = 25 C
0.5
0.2
0.1
0.05
0.1
IC/IB = 12
IC/IB = 5
0.02
t
T
p
t
p
0.1
0.01
P
D =
D
0.01
t
D = 0
T
0.001
1E-06
1E-04
1E-02
t / s
1E+00
0.1
1
10
100
IC / A
Fig.8. Typical collector-emitter saturation voltage.
Fig.11. Transient thermal impedance.
th j-mb = f(t); parameter D = tp/T
V
CEsat = f (IC); parameter IC/IB
Z
VBEsat / V
1
0.9
0.8
0.7
0.6
IC = 6 A
4 A
Tmb = 85 C
Tmb = 25 C
0
1
2
3
4
IB / A
Fig.9. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
VCC
IC / A
35
30
25
20
15
10
5
LC
Area where
fails occur
VCL
IBend
LB
CFB
T.U.T.
-VBB
0
100
1000
1700
VCE / V
Fig.12. Test Circuit RBSOA.
VCC = 150 V; -VBB = 1 - 4 V;
Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax
LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH;
CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
MECHANICAL DATA
Dimensions in mm
16 max
5.3 max
1.8
Net Mass: 5 g
o
3.5
max
5.3
7.3
3.5
21
max
seating
plane
15.5
max
2.5
4.0
max
15.5
min
1
2
3
0.9 max
2.2 max
3.2 max
1.1
0.4 M
5.45 5.45
Fig.14. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.100
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