BU2725DX [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU2725DX |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2725DX
DESCRIPTION
·With TO-3PML package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of color TV receivers
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Base current (DC)
CONDITIONS
Open emitter
VALUE
1700
800
7.5
UNIT
V
Open base
V
Open collector
V
12
A
ICM
30
A
IB
12
A
IBM
Base current-peak
20
A
Ptot
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
45
W
ꢀ
Tj
150
-65~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2725DX
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)EBO
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
13.5
Collector-emitter saturation voltage IC=7A ;IB=1.75 A
1.0
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=7A ;IB=1.75 A
0.78
0.86
0.95
V
VCE=BVCES; VBE=0
Tj=125ꢀ
1.0
2.0
mA
mA
IEBO
VEB=7.5V; IC=0
IC=1A ; VCE=5V
IC=7A ; VCE=1V
IF=7A
110
19
hFE-1
hFE-2
DC current gain
3.8
7.8
2.2
VF
Diode forward voltage
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2725DX
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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