BU2727AW [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU2727AW |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2727AW
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 825V (Min)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of color
TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector- Emitter Voltage(VBE= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1700
825
UNIT
V
V
7.5
V
Collector Current- Continuous
Collector Current-Peak
12
A
ICM
30
A
IB
Base Current- Continuous
Base Current-Peak
12
A
IBM
25
A
Collector Power Dissipation
@ TC=25℃
PC
125
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2727AW
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 100mA; IB= 0; L= 25mH
IE= 1mA; IC= 0
MIN
825
7.5
TYP. MAX UNIT
V
V
IC= 5A; IB= 0.91A
1.0
V
V
VCE
(sat)
IC= 5A; IB= 0.91A
0.95
VBE
(sat)
VCE= 1700V; VBE= 0
VCE= 1700V; VBE= 0; TC=125℃
1.0
2.0
ICES
mA
mA
IEBO
hFE-1
hFE-2
Emitter Cutoff Current
VEB= 7.5V ; IC= 0
IC= 0.1A ; VCE= 5V
IC= 5A ; VCE= 1V
1.0
35
11
DC Current Gain
12
DC Current Gain
5.5
2
isc Website：www.iscsemi.cn
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