BU2725DW [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU2725DW |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2725DW
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Ddamper Ddiode
APPLICATIONS
·Designed for use in horizontal deflection circuits of color
TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VEBO
IC
PARAMETER
Collector- Emitter Voltage(VBE= 0)
Emitter-Base Voltage
VALUE
1700
7.5
UNIT
V
V
Collector Current- Continuous
Collector Current-Peak
12
A
ICM
30
A
IB
Base Current- Continuous
Base Current-Peak
12
A
IBM
20
A
Collector Power Dissipation
@ TC=25℃
PC
125
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-65~150
Tstg
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
2.8
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2725DW
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)EBO
IE= 600mA; IC= 0
7.5
V
IC= 7A; IB= 1.75A
1.0
V
V
VCE
(sat)
IC= 7A; IB= 1.75A
0.95
VBE
(sat)
VCE= 1700V ; VBE= 0
CE= 1700V ; VBE= 0; TC=125℃
1.0
2.0
ICES
mA
mA
V
IEBO
hFE-1
hFE-2
VECF
VEB= 7.5V ; IC= 0
IC= 1A ; VCE= 5V
IC= 7A ; VCE= 1V
IF= 7A
110
19
DC Current Gain
DC Current Gain
3.8
7.8
2.2
C-E Diode Forward Voltage
V
2
isc Website：www.iscsemi.cn
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