RD12MB2-T1B [NEC]
Zener Diode, 12V V(Z), 2.09%, 0.2W, Silicon, Unidirectional, MINIMOLD, SC-59, 3 PIN;![RD12MB2-T1B](http://pdffile.icpdf.com/pdf2/p00241/img/icpdf/RD5-6MB1-T2B_1457283_icpdf.jpg)
型号: | RD12MB2-T1B |
厂家: | ![]() |
描述: | Zener Diode, 12V V(Z), 2.09%, 0.2W, Silicon, Unidirectional, MINIMOLD, SC-59, 3 PIN |
文件: | 总6页 (文件大小:208K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00283/img/page/RD12MVS1-101_1687627_files/RD12MVS1-101_1687627_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00283/img/page/RD12MVS1-101_1687627_files/RD12MVS1-101_1687627_2.jpg)
RD12MVS1-101
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
MITSUBISHI
![](http://pdffile.icpdf.com/pdf2/p00271/img/page/RD12MVS1-101_1627384_files/RD12MVS1-101_1627384_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00271/img/page/RD12MVS1-101_1627384_files/RD12MVS1-101_1627384_2.jpg)
RD12MVS1-101,T112
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
MITSUBISHI
©2020 ICPDF网 联系我们和版权申明