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RD12MVS1_11 [MITSUBISHI]

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W; 符合RoHS指令，硅MOSFET功率晶体管， 175MHz的， 12W
RD12MVS1_11
型号： RD12MVS1_11
厂家： Mitsubishi Group    Mitsubishi Group
描述：

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
符合RoHS指令，硅MOSFET功率晶体管， 175MHz的， 12W

晶体 晶体管
文件： 总8页 (文件大小：591K)
中文：  中文翻译
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< Silicon RF Power MOS FET (Discrete) >  
RD12MVS1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W  
DESCRIPTION  
OUTLINE DRAWING  
4.6+/-0.05  
RD12MVS1 is a MOS FET type transistor  
specifically designed for VHF RF power  
amplifiers applications.  
3.3+/-0.05  
0.8+/-0.05  
6.0+/-0.15  
0.2+/-0.05  
1
2
FEATURES  
High Power Gain:  
3
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz  
High Efficiency: 57%typ. (175MHz)  
(0.25)  
(0.25)  
INDEX MARK  
(Gate)  
Terminal No.  
1.Drain (output)  
2.Source (GND)  
3.Gate (input)  
APPLICATION  
Note  
( ):center value  
UNIT:mm  
For output stage of high power amplifiers in  
VHF band mobile radio sets.  
RoHS COMPLIANT  
RD12MVS1-101,T112 is a RoHS compliant products.  
RoHS compliance is indicating by the letter “G” after the Lot Marking.  
This product includes the lead in high melting temperature type solders.  
However, it is applicable to the following exceptions of RoHS Directions.  
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)  
ABSOLUTE MAXIMUM RATINGS  
(Tc=25 , UNLESS OTHERWISE NOTED)  
°C  
SYMBOL  
PARAMETER  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
CONDITIONS  
RATINGS  
UNIT  
V
V
DSS  
V
V
=0V  
=0V  
50  
GS  
V
GSS  
+/- 20  
V
DS  
ID  
4
A
Pin  
Pch  
Tj  
Input Power  
Zg=Zl=50  
2
50  
W
Channel Dissipation  
Junction Temperature  
Storage Temperature  
Thermal Resistance  
Tc=25°C  
W
°C  
150  
°C  
Tstg  
Rthj-c  
-40 to +125  
2.5  
°C/W  
Junction to Case  
Note: Above parameters are guaranteed independently.  
Publication Date : Oct．2011  
1
< Silicon RF Power MOS FET (Discrete) >  
RD12MVS1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W  
ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)  
°C  
LIMITS  
UNIT  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
-
TYP. MAX.  
I
Zero Gate Voltage Drain Current V =17V, V =0V  
-
-
10  
1
uA  
uA  
V
DSS  
DS  
GS  
DS  
GS  
I
Gate to Source Leak Current  
Gate Threshold Voltage  
Output Power  
V
V
=10V, V =0V  
-
GSS  
DS  
V
TH  
=12V, I =1mA  
1.8  
11.5  
55  
-
4.4  
-
DS  
Pout  
f=175MHz,V =7.2V  
12  
57  
W
%
DD  
Pin=1.0W,Idq=1.0A  
Drain Efficiency  
-
D  
V
DD  
=9.2V,Po=12W(Pin Control)  
Load VSWR tolerance  
f=175MHz,Idq=1.0A,Zg=50  
Not destroy  
-
Load VSWR=20:1(All Phase)  
Note: Above parameters, ratings, limits and conditions are subject to change.  
Publication Date : Oct．2011  
2
< Silicon RF Power MOS FET (Discrete) >  
RD12MVS1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W  
TYPICAL CHARACTERISTICS  
CHANNEL DISSIPATION VS.  
AMBIENT TEMPERATURE  
Vgs-Ids CHARACTERISTICS  
10  
8
60  
50  
40  
30  
20  
10  
0
Ta=+25°C  
Vds=10V  
*1:The material of the PCB  
Glass epoxy(t=0.6 mm)  
Ids  
6
On PCB(*1) with Heat-sink  
On PCB(*1)  
with throgh hole  
and Heat-sink  
4
GM  
2
0
0
40  
80  
120  
160  
200  
0
1
2
3
4
5
6
7
Vgs(V)  
AMBIENT TEMPERATURETa(°C)  
Vds-Ids CHARACTERISTICS  
Vds VS. Ciss CHARACTERISTICS  
9
8
7
6
5
4
3
2
1
0
160  
140  
120  
100  
80  
Ta=+25°C  
Ta=+25°C  
f=1MHz  
Vgs=7.5V  
Vgs=6.0V  
Vgs=5.5V  
Vgs=5.0V  
60  
Vgs=4.5V  
Vgs=4.0V  
40  
20  
Vgs=3.5V  
0
0
2
4
6
8
10  
0
5
10  
Vds(V)  
15  
20  
Vds(V)  
Vds VS. Coss CHARACTERISTICS  
Vds VS. Crss CHARACTERISTICS  
180  
160  
140  
120  
100  
80  
20  
18  
16  
14  
12  
10  
8
Ta=+25°C  
f=1MHz  
Ta=+25°C  
f=1MHz  
60  
6
40  
4
20  
2
0
0
0
5
10  
15  
20  
0
5
10  
15  
20  
Vds(V)  
Vds(V)  
Publication Date : Oct．2011  
3
< Silicon RF Power MOS FET (Discrete) >  
RD12MVS1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W  
TYPICAL CHARACTERISTICS  
Pin-Po CHARACTERISTICS @f=175MHz  
Pin-Po CHARACTERISTICS @f=175MHz  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
Ta=+25°C  
f=175MHz  
Vdd=7.2V  
Idq=1.0A  
Po  
Po  
40  
30  
20  
10  
0
80  
60  
40  
20  
0
Ta=25°C  
f=175MHz  
Vdd=7.2V  
Idq=1.0A  
η
ｄ
ηd  
Gp  
6
Idd  
4
2
Ｉｄｄ  
0
-5  
0
5
10  
15  
20  
25  
30  
0
200  
400  
600  
800  
1000  
Pin(dBm)  
Pin(mW)  
Vdd-Po CHARACTERISTICS @f=175MHz  
Vgs-Ids CHARACTORISTICS 2  
-25°C  
25  
20  
15  
10  
5
5
4
3
2
1
0
8
+25°C  
Ta=25°C  
Vds=10V  
Tc=-25~+75°C  
Po  
f=175MHz  
+75°C  
Pin=0.3W  
Icq=700mA  
6
4
2
0
Zg=ZI=50 ohm  
Idd  
0
0
2
4
6
8
4
6
8
10  
12  
Vgs(V)  
Vdd(V)  
Publication Date : Oct．2011  
4
< Silicon RF Power MOS FET (Discrete) >  
RD12MVS1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W  
TEST CIRCUIT (f=175MHz)  
Vgg  
Vdd  
C2  
C1  
C3  
W
W
L2  
24.9nH  
33pF  
47pF  
4.7kOHM  
4mm  
Contact  
3.5mm  
Contact  
3.5mm  
25mm  
6.0mm  
5.0mm  
RF-OUT  
L1  
8nH  
330pF  
35mm  
12mm  
3mm  
RF-in  
330pF  
20mm  
RD12MV  
S1  
100pF  
15pF  
24pF  
68pF  
Note:Boad material PTFE substrate  
L:Enameled Wire  
Micro strip line width=2.2mm/50、er:2.7、t=0.8mm  
W:Line width=1.0mm  
Chip Condencer :GRM40  
L1:4Turns、D:0.43mm、φ1.66mm(outside diameter)  
L2:6Turns、D:0.43mm、φ2.46mm(outside diameter)  
C1、C2:1000ｐF  
Copper Board spring t=0.1mm  
C3: 10μF、50V  
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS  
175MHz Zin* Zout*  
Zo=50Ω  
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W  
f=175MHz Zout*  
Zin*=0.965-j7.73  
Zout*=1.73-j1.14  
Zin*: Complex conjugate of input impedance  
Zout*: Complex conjugate of output impedance  
f=175MHz Zin*  
Publication Date : Oct．2011  
5
< Silicon RF Power MOS FET (Discrete) >  
RD12MVS1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W  
RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)  
Freq.  
[MHz]  
25  
50  
75  
S11  
S21  
S12  
S22  
(mag)  
0.824  
0.816  
0.817  
0.829  
0.837  
0.845  
0.852  
0.860  
0.870  
0.876  
0.886  
0.891  
0.902  
0.903  
0.909  
0.907  
0.912  
0.923  
0.928  
0.934  
0.932  
0.936  
0.932  
0.935  
0.939  
0.939  
0.943  
0.945  
0.943  
0.939  
0.943  
0.948  
0.951  
0.953  
0.952  
0.954  
0.944  
0.951  
0.954  
0.955  
(ang)  
-159.3  
-169.0  
-171.7  
-172.8  
-173.4  
-173.9  
-174.0  
-174.3  
-175.0  
-175.0  
-175.6  
-175.8  
-175.9  
-176.2  
-176.7  
-177.6  
-177.9  
-178.3  
-178.5  
-178.6  
-178.8  
-179.2  
179.6  
179.1  
179.2  
179.4  
179.1  
178.7  
177.5  
177.2  
176.9  
176.8  
177.1  
176.7  
176.1  
175.4  
174.4  
174.6  
175.0  
175.0  
(mag)  
(ang)  
93.4  
85.2  
79.3  
74.5  
68.5  
64.2  
60.8  
57.2  
53.2  
48.9  
46.5  
43.6  
41.0  
38.3  
35.7  
33.7  
31.6  
29.7  
27.9  
25.8  
23.6  
23.2  
20.8  
20.0  
17.4  
15.5  
15.6  
15.5  
13.3  
12.2  
10.8  
8.6  
(mag)  
0.018  
0.016  
0.016  
0.016  
0.016  
0.015  
0.016  
0.012  
0.014  
0.013  
0.012  
0.012  
0.014  
0.012  
0.009  
0.009  
0.009  
0.004  
0.008  
0.007  
0.005  
0.006  
0.004  
0.003  
0.003  
0.003  
0.003  
0.002  
0.004  
0.001  
0.004  
0.002  
0.003  
0.003  
0.006  
0.003  
0.007  
0.006  
0.003  
0.003  
(ang)  
-3.3  
1.4  
(mag)  
0.761  
0.765  
0.778  
0.787  
0.800  
0.796  
0.810  
0.836  
0.858  
0.855  
0.859  
0.860  
0.886  
0.898  
0.898  
0.893  
0.903  
0.910  
0.917  
0.925  
0.922  
0.922  
0.939  
0.939  
0.938  
0.930  
0.932  
0.946  
0.949  
0.940  
0.935  
0.943  
0.945  
0.948  
0.946  
0.950  
0.946  
0.952  
0.959  
0.950  
(ang)  
-160.3  
-168.1  
-170.7  
-170.3  
-171.7  
-172.3  
-172.3  
-172.2  
-172.2  
-173.0  
-173.3  
-173.4  
-174.5  
-174.6  
-175.0  
-175.6  
-175.7  
-176.6  
-176.8  
-177.3  
-177.6  
-177.6  
-178.0  
-178.9  
-179.3  
-179.5  
-179.9  
-179.9  
179.3  
179.0  
178.8  
178.2  
177.5  
176.8  
176.7  
176.7  
176.0  
175.7  
175.0  
174.8  
26.397  
13.193  
8.716  
6.537  
5.110  
4.117  
3.402  
2.896  
2.525  
2.175  
1.897  
1.675  
1.496  
1.348  
1.208  
1.087  
0.996  
0.912  
0.836  
0.748  
0.707  
0.647  
0.591  
0.562  
0.520  
0.485  
0.460  
0.435  
0.407  
0.380  
0.358  
0.327  
0.308  
0.314  
0.284  
0.269  
0.254  
0.250  
0.232  
0.227  
-10.9  
-14.1  
-18.2  
-18.3  
-15.1  
-30.4  
-29.9  
-24.5  
-39.4  
-53.1  
-32.9  
-32.2  
-29.2  
-21.6  
-32.5  
-37.2  
-25.9  
-21.3  
-46.6  
-25.0  
-40.9  
-33.6  
17.7  
25.4  
51.4  
5.7  
100  
125  
150  
175  
200  
225  
250  
275  
300  
325  
350  
375  
400  
425  
450  
475  
500  
525  
550  
575  
600  
625  
650  
675  
700  
725  
750  
775  
800  
825  
850  
875  
900  
925  
950  
975  
1000  
5.6  
-16.1  
58.8  
-6.7  
8.0  
8.5  
7.0  
9.7  
6.7  
6.0  
1.9  
7.8  
40.4  
77.0  
46.5  
64.5  
60.3  
69.7  
80.3  
86.7  
Publication Date : Oct．2011  
6
< Silicon RF Power MOS FET (Discrete) >  
RD12MVS1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W  
ATTENTION:  
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have  
a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch  
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.  
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice  
that do not leakage the unnecessary electric wave and use this products without cause damage for human and  
property per normal operation.  
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and  
electric wave obstacle for equipment.  
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:  
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details  
regarding operation of these products from the formal specification sheet. For copies of the formal  
specification sheets, please contact one of our sales offices.  
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed  
for consumer mobile communication terminals and were not specifically designed for use in other applications.  
In particular, while these products are highly reliable for their designed purpose, they are not manufactured  
under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed  
necessary for critical communications elements and In the application, which is base station applications and  
fixed station applications that operate with long term continuous transmission and a higher on-off frequency  
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain  
period and others as needed. For the reliability report which is described about predicted operating life time of  
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi  
Semiconductor product distributor.  
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore  
appropriate ESD precautions are required.  
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is  
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.  
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is  
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,  
etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of  
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.  
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the  
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to  
extreme short current flow between the drain and the source of the device. These results causes in fire or  
injury.  
7. For specific precautions regarding assembly of these products into the equipment, please refer to the  
supplementary items in the specification sheet.  
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in  
any way from it’s original form.  
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page  
of this data sheet.  
10. Please refer to the additional precautions in the formal specification sheet.  
Publication Date : Oct．2011  
7
< Silicon RF Power MOS FET (Discrete) >  
RD12MVS1  
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W  
Keep safety first in your circuit designs!  
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more  
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead  
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit  
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of  
non-flammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi  
semiconductor product best suited to the customer’s application; they do not convey any license under any  
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.  
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s  
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application  
examples contained in these materials.  
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms  
represents information on products at the time of publication of these materials, and are subject to change by  
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore  
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor  
product distributor for the latest product information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric  
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or  
errors.  
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including  
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).  
•When using any or all of the information contained in these materials, including product data, diagrams, charts,  
programs, and algorithms, please be sure to evaluate all information as a total system before making a final  
decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no  
responsibility for any damage, liability or other loss resulting from the information contained herein.  
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system  
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric  
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product  
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,  
aerospace, nuclear, or undersea repeater use.  
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part  
these materials.  
•If these products or technologies are subject to the Japanese export control restrictions, they must be exported  
under a license from the Japanese government and cannot be imported into a country other than the approved  
destination.  
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of  
destination is prohibited.  
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for  
further details on these materials or the products contained therein.  
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.  
Publication Date : Oct．2011  
8

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